RENESAS R2J25953SP

Preliminary Datasheet
R2J25953SP
H-Bridge Control High Speed Power Switching
with Built-in Driver IC and Power MOS FET
R07DS0044EJ0400
Rev.4.00
May 09, 2013
Description
The R2J25953 multi-chip module incorporates high-side Pch MOS FET, low-side Nch MOS FET, and Bi-CMOS driver
in a single HSOP-36 package.
Features
 For Automotive application
 Built-in low on state resistance MOS FET.
(Pch: 16 m Max., Nch: 11 m Max.)
 Pch MOS FET is adopted on the high-side, and the charge pump noise was lost.
 Built-in protection circuit of Thermal shut-down (TSD), Low Voltage Inhit (LVI), Overvoltage Detection (OVD)
and Overcurrent Detection.
 Built-in diagnostic function.
 Built-in cross-conduction protection.
 Small Surface mounting package: HSOP-36
Block Diagram
Reverce battery
protection device
VBAT
Vz
M
Cp
VBS1
VB1
VCC
VBS2
VB2
Pch MOS
Pch MOS
LVI, OVD
Dr.
Dr.
Overcurrent detection
OUT2
OUT1
TSD
Dr.
Dr.
Logic
Nch MOS
PGND1
Nch MOS
PWM
INA
INB
DIAG
LGND
V30
C1
PGND2
Pull-up in the Microcomputer
R1 power supply
Microcomputer
R07DS0044EJ0400 Rev.4.00
May 09, 2013
Page 1 of 16
R2J25953SP
Preliminary
VB2
OUT1
NC
VBS1
GND
V30
GND
VBS2
VCC
NC
OUT2
NC
NC
VB1
Outline
36
19
TAB2
OUT2
TAB3
OUT1
TAB1
PGND2
NC
OUT1
PWM
INA
INB
GND
LGND
GND
DIAG
NC
OUT2
NC
18
PGND1
1
Pin Description
Pin No.
1 to 3
4
5
6
7
8
9
10
11
12
13
14
15
16 to 18
19 to 21
Pin name
PGND1
NC
OUT1
PWM
INA
INB
GND
LGND
GND
DIAG
NC
OUT2
NC
PGND2
VB2
Description
Power GND1
No connect
Internally corrected to TAB1
PWM input
A input
B input
Internally corrected to TAB3
IC GND
Internally corrected to TAB3
Diagnostic output (open drain)
No connect
Internally corrected to TAB2
No connect
Power GND2
MOS FET power supply 2
R07DS0044EJ0400 Rev.4.00
May 09, 2013
Pin No.
22
23
24
25
26
27
28
29
30
31
32
33
34 to 36
TAB1
TAB2
TAB3
Pin name
NC
OUT2
NC
VCC
VBS2
GND
V30
GND
VBS1
NC
OUT1
NC
VB1
OUT1
OUT2
GND
Description
No connect
Internally corrected to TAB2
No connect
IC power supply
VB2 sense
Internally corrected to TAB3
IC bias voltage (3.3 V)
Internally corrected to TAB3
VB1 sense
No connect
Internally corrected to TAB1
No connect
MOS FET power supply 1
MOS FET output 1
MOS FET output 2
IC tab GND
Page 2 of 16
R2J25953SP
Preliminary
Absolute Maximum Ratings
(Ta = 25°C)
Item
Supply voltage
Input voltage
Diag voltage
Output current
Diag current
Junction temperature
Storage temperature
Power temperature
Symbol
VB
Vin
Vdiag
Iout
Idiag
Tj
Tstg
Pt
Ratings
18
–0.3 to VB
–0.3 to VB
50
5
–40 to +150
–55 to +150
40
Unit
V
V
V
A
mA
C
C
W
Note
1
2
3
3
4
Notes: 1. 28 V at 25C, 1 min.
40 V at 25C, 1 sec.
2. Applies to INA, INB, and PWM. Clamps it with 19 V typ.
3. Applies to DIAG
4. One element operation: Tc = 25C
R07DS0044EJ0400 Rev.4.00
May 09, 2013
Page 3 of 16
R2J25953SP
Preliminary
Electrical Characteristics
(Ta = 25°C, VB = VCC = 12 V)
Item
Symbol
Min
Typ
Max
Unit
Icc0
Icc
IinvbL
RonH
—
—
—
—
30
3.5
—
9
50
10
1
16
A
mA
A
m
RonL
—
7
11
m
Ioff
IinL
IinH
Vthin
Vtlin
tpLH
tpHL
tr
tf
VDiag
—
—
—
3.0
—
—
—
—
—
—
10
—
—
—
—
1.5
3.0
1.0
1.0
0.4
20
10
10
—
1.5
4.0
6.0
3.0
3.0
0.6
A
A
A
V
V
s
s
s
s
V
Leak current
IDiag
—
—
Shut-down
Tsd
150
175
temperature
Hysteresis
Thys
7
25
OVD
Shut-down
VtvH
28.9
34
voltage
Return voltage
VtvL
21.3
25
LVI
Return voltage
VRLVI
5.0
5.35
Hysteresis
VHLVI
0.3
0.5
Overcurrent Shut-down
IcL
35
—
detection
current
Detection time
tcL
60
10
MOS FET
Pch forward
VDFp
—
1.0
Body-diode voltage
Nch forward
VDFn
—
1.0
voltage
Notes: 1. Refer to truth table.
2. Refer to the input condition to the truth table.
10
—
A
°C
—
39.1
°C
V
28.7
5.6
0.7
—
V
V
V
A
20
1.3
s
V
1.3
V
Supply current
VB
MOS
Input current
Static High-side
resistance
Static Low-side
resistance
Off state current
Input current
IN
High threshold
Low threshold
Delay time
Rise time
Fall time
DIAG
Output voltage
TSD
Condition
Application
terminal
VCC
Standby
ACTIVE
Standby
Iout = 15 A
Pulse test
Iout = 15 A
Pulse test
VB1/VB2
Vin = 0 V
Vin =VB
INA/INB
/PWM
OUT/IN (PWM)
OUT, PWM
OUT
OUT1/2
I = 2 mA,
DIAG = Low
Vdiag = 0 V
DIAG
Note
1
1
1
2
3
VCC
VCC
OUT1/2
IF = 50 A,
Pulse test
PWM
50%
50%
tpLH
tpHL
90%
OUT1
(OUT2)
90%
50%
50%
10%
10%
tr
tf
3. It is a design guaranteed value, and it doesn't apply to the final test.
R07DS0044EJ0400 Rev.4.00
May 09, 2013
Page 4 of 16
R2J25953SP
Preliminary
Truth table
The operation of OUT1, OUT2, and DIAG is shown in the following.
PWM
Input
INA
High
High
Status
INB
High
Low
Low
High
Low
Low
High
High
Low
Low
High
Low
Excluding All = Low
At least one of PWM,
INA, and INB is high.
LVI
Output
TSD
OVD
Overcurrent
detection
off
off
off
off
off
off
off
Protection circuit doesn't operate
on
x
x
x
off
on
x
x
off
x
on
x
off
x
x
on
State
OUT1
OUT2
DIAG
High
High
Low
Low
Hi-z
Hi-z
Low
Low
Hi-z
Hi-z
High
Low
High
Low
Hi-z
Low
Hi-z
Low
Hi-z
Hi-z
High
High
High
High
High
High
High
High
High
Low
STANDBY
LVI
TSD
Hi-z
(Latch)
Hi-z
Hi-z
(Latch)
Hi-z
Low
(Latch)
Low
Overcurrent
detection
OVD
ACTIVE
Notes 1. x: Regardless of High, Low, on and off.
2. Protect circuit
off = undetection
on = detection
3. State of pin OUT
Low: Nch MOS FET ON, High: Pch MOS FET ON, Hi-z: Nch and Pch MOS FET OFF
4. The latch of overcurrent detection is released when LVI = on or INA = INB = Low.
External Parts List
Parts No.
Cp
R1
C1
R07DS0044EJ0400 Rev.4.00
May 09, 2013
Recommended value
10 F
> 10 k
0.033 F
Purpose
Power supply bypass capacitor
Pull up Pin DIAG
Pin V30 bypass capacitor
Page 5 of 16
R2J25953SP
Preliminary
Equivalent Circuit
Pin name
PGND1
PGND2
Pin No.
1, 2, 3,
16, 17, 18
Equivalent circuit
V30
OUT1
OUT2
LGND
Nch MOS
PGND1
PGND2
OUT1
OUT2
5, 32, TAB1
14, 23, TAB2
VB1
VB2
Pch MOS
OUT1
OUT2
Nch MOS
PGND1
PGND2
PWM
INA
INB
6
7
8
VCC
V30
PWM
INA
INB
Vth
Vtl
to
Driver
LGND
DIAG
12
DIAG
LGND
VB1
VB2
34, 35, 36
19, 20, 21
VB1
VB2
VCC
Pch MOS
R07DS0044EJ0400 Rev.4.00
May 09, 2013
Page 6 of 16
R2J25953SP
Pin name
VCC
LGND
Preliminary
Pin No.
Equivalent circuit
25
10
VCC
LGND
VBS1
VBS2
30
26
VB1
VB2
VBS1
VBS2
V30
28
VCC
VCC
V30
LGND
R07DS0044EJ0400 Rev.4.00
May 09, 2013
Page 7 of 16
R2J25953SP
Preliminary
Main Characteristics
ICC0 vs. VCC
ICC vs. VCC
Standby Mode
80
6
ICC (mA)
60
ICC0 (μA)
Enable Mode
8
40
4
2
20
0
0
4
8
12
0
0
16
4
8
VCC (V)
12
16
VCC (V)
Ron Low Side vs. Iout
Ron High Side vs. Iout
VCC = 12 V
12
VCC = 12 V
16
14
10
RonH (mΩ)
RonL (mΩ)
12
8
6
4
10
8
6
4
2
2
0
5
15
20
25
0
5
30
10
15
20
25
30
Iout (A)
Iout (A)
Turn-on Delay Time (tpLH) vs. Iout
Turn-off Delay Time (tpHL) vs. Iout
PWM = 20 kHz, INA = High, INB = Low,
VCC = 12 V
PWM = 20 kHz, INA = High, INB = Low,
VCC = 12 V
6
6
5
5
4
4
tpHL (μs)
tpLH (μs)
10
3
3
2
2
1
1
0
0
2
4
6
Iout (A)
R07DS0044EJ0400 Rev.4.00
May 09, 2013
8
10
12
0
0
2
4
6
8
10
12
Iout (A)
Page 8 of 16
R2J25953SP
Preliminary
Rise Time vs. Iout
3
2.5
2.5
2
2
tf (μs)
tr (μs)
3
Fall Time vs. Iout
PWM = 20 kHz, INA = High, INB = Low,
VCC = 12 V
1.5
1
0.5
0.5
2
4
6
8
10
0
0
12
6
ICC0 vs. Ta
ICC vs. Ta
40
7
35
6
ICC (mA)
25
20
15
10
12
5
4
3
10
2
5
1
0
-50 -25 0
25 50 75 100 125 150 175
8
VCC = 12 V, Enable Mode
8
30
ICC0 (μA)
4
Iout (A)
VCC = 12 V, Standby Mode
0
-50 -25 0
2
Iout (A)
45
25 50 75 100 125 150 175
Ta (°C)
Ta (°C)
Over-Voltage Detection vs. Ta
Over-Voltage Return vs. Ta
40
40
35
35
30
30
VtvL (V)
VtvH (V)
1.5
1
0
0
PWM = 20 kHz, INA = High, INB = Low,
VCC = 12 V
25
20
25
20
15
15
10
10
0
-50 -25 0
25 50 75 100 125 150 175
Ta (°C)
R07DS0044EJ0400 Rev.4.00
May 09, 2013
0
-50 -25 0
25 50 75 100 125 150 175
Ta (°C)
Page 9 of 16
R2J25953SP
Preliminary
Low-Voltage Inhibit Return vs. Ta
Low-Voltage Inhibit Hysteresis vs. Ta
6
0.7
5.8
5.6
0.6
5.2
VHLVI (V)
VRLVI (V)
5.4
5
4.8
4.6
4.4
0.5
0.4
4.2
4
0
-50 -25 0
Ta (°C)
High Level Input Voltage vs. Ta
(PWM/INA/INB)
Low Level Input Voltage vs. Ta
(PWM/INA/INB)
VCC = 7 V
3.5
3.5
3
3
2.5
VCC = 7 V
4
Vtlin (V)
Vthin (V)
25 50 75 100 125 150 175
Ta (°C)
4
2.5
2
2
1.5
1.5
1
-40 -20 0 20 40 60 80 100 120140 160
1
-40 -20 0 20 40 60 80 100 120140 160
Ta (°C)
Ta (°C)
High Level Input Voltage vs. Ta
(PWM/INA/INB)
Low Level Input Voltage vs. Ta
(PWM/INA/INB)
VCC = 16 V
4
3.5
3.5
3
3
2.5
VCC = 16 V
4
Vtlin (V)
Vthin (V)
0.3
-50 -25 0
25 50 75 100 125 150 175
2.5
2
2
1.5
1.5
1
-40 -20 0 20 40 60 80 100 120140 160
1
-40 -20 0 20 40 60 80 100 120140 160
Ta (°C)
Ta (°C)
R07DS0044EJ0400 Rev.4.00
May 09, 2013
Page 10 of 16
R2J25953SP
Preliminary
Ron High side vs. Ta
20
Ron Low side vs. Ta
VCC = 12 V, ILoad = 15 A
16
18
VCC = 12 V, ILoad = 15 A
14
12
14
RonL (mΩ)
RonH (mΩ)
16
12
10
8
10
8
6
6
4
4
2
2
0
-40 -20 0 20 40 60 80 100 120140 160
0
-40 -20 0 20 40 60 80 100 120140 160
Ta (°C)
Ta (°C)
Overcurrent Detection vs. Ta (Short to VB)
Overcurrent Detection vs. Ta (Short to GND)
VCC = 12 V
90
90
80
80
70
60
70
60
50
50
40
40
30
-40 -20 0 20 40 60 80 100 120140 160
30
-40 -20 0 20 40 60 80 100 120140 160
Ta (°C)
Ta (°C)
Turn-on Delay Time (tpLH) vs. Ta
Turn-off Delay Time (tpHL) vs. Ta
5
PWM = 20 kHz, INA = High, INB = Low,
Io = 5 A
5
PWM = 20 kHz, INA = High, INB = Low,
Io = 5 A
4
tpHL (μs)
4
tpLH (μs)
VCC = 12 V
100
IcL (A)
IcL (A)
100
3
2
3
2
1
1
0
-40 -20 0 20 40 60 80 100 120140 160
0
-40 -20 0 20 40 60 80 100 120140 160
Ta (°C)
Ta (°C)
R07DS0044EJ0400 Rev.4.00
May 09, 2013
Page 11 of 16
R2J25953SP
Preliminary
Rise Time vs. Ta
3
2.5
2.5
2
2
tf (μs)
tr (μs)
3
Fall Time vs. Ta
PWM = 20 kHz, INA = High, INB = Low,
Io = 5 A
1.5
PWM = 20 kHz, INA = High, INB = Low,
Io = 5 A
1.5
1
1
0.5
0.5
0
-40 -20 0 20 40 60 80 100 120140 160
0
-40 -20 0 20 40 60 80 100 120140 160
Ta (°C)
Ta (°C)
Recommended Wiring Pattern
LOAD
VB
C1
TAB2 (OUT2)
VB2
NC
OUT1
NC
VBS1
GND
V30
GND
VBS2
VCC
NC
OUT2
NC
PGND2
NC
OUT1
PWM
INA
INB
GND
LGND
GND
DIAG
NC
OUT2
NC
TOP VIEW
PGND1
Cp
TAB1 (OUT1)
VB1
Dz
GND
Notes 1.
2.
3.
4.
VB1 and VB2 will diverge soon because of the voltage sensing terminal and it wires for VBS1 and VBS2.
GND side wiring of C1 must diverge from the LGND side.
Insertion examination of use conditions about the reverse battery protection device and Dz.
The reverse battery protection please choose the parts such as MOSFET or Schottky diode by use.
R07DS0044EJ0400 Rev.4.00
May 09, 2013
Page 12 of 16
R2J25953SP
Preliminary
Operational Mode
When PWM is controlled, recovery control can be selected because of the low loss. However, please note that reversebrake hangs at acceleration of the motor.
Operational mode
Example 1. Forward mode (Recovery control)
INA = PWM on/off
INB = Low
Circuit operational
VB2
VB1
ON ⇔ OFF
(Synchronizes with PWM)
OFF
Io
PWM = High
OUT1
M
OUT2
OFF ⇔ ON
(Synchronizes with PWM)
Example 2. Reverse mode (Recovery control)
INA = Low
INB = PWM on/off
VB2
VB1
ON ⇔ OFF
(Synchronizes with PWM)
OFF
Io
PWM = High
OUT1
OUT2
M
OFF ⇔ ON
(Synchronizes with PWM)
ON
Example 3. Forward mode (No recovery control)
INA = High
INB = Low
ON
ON ⇔ OFF
(Synchronizes with PWM)
OFF
Io
PWM = PWM on/off
OUT1
OFF
Example 4. Reverse mode (No recovery control)
INA = Low
INB = High
Io
ON
OUT2
ON
ON ⇔ OFF
(Synchronizes with PWM)
OFF
OUT1
M
VB2
VB1
PWM = PWM on/off
R07DS0044EJ0400 Rev.4.00
May 09, 2013
VB2
VB1
M
OUT2
OFF
Page 13 of 16
R2J25953SP
Preliminary
Timing Chart (Normal operation)
Standby
(INA,INB,PWM = Low)
Forward
(recovery)
Reverce
(recovery)
Forward
Reverce
PWM
PWM
PWM
PWM
Standby
(INA, INB, PWM = Low)
INA
INB
PWM
VB
OUT1
High-side VGS
OUT1
Low-side VGS
GND
VB
OUT1
GND
Vf
VB
OUT2
High-side VGS
OUT2
Low-side VGS
GND
VB
OUT2
GND
Vf
R07DS0044EJ0400 Rev.4.00
May 09, 2013
Page 14 of 16
R2J25953SP
Preliminary
Timing Chart (Protection operation)
OVD
Overcurrent detection
TSD
LVI
INA
INB (Low)
PWM
VtvH
VtvL
VRLVI
VB
IcL
IOUT
VHLVI
tcL
TSD
Thys
Tj
OUT1
Hi-z
Hi-z
Hi-z
Hi-z
OUT2
Hi-z
Hi-z
Hi-z
Hi-z
DIAG
Latch cancel
R07DS0044EJ0400 Rev.4.00
May 09, 2013
Page 15 of 16
R2J25953SP
Preliminary
Package Dimensions
JEITA Package Code
P-HSOP36-11x14.1-0.65
RENESAS Code
PRSP0036JC-A
Previous Code
—
MASS[Typ.]
1.96g
NOTE)
1.DIMENSION"*1"AND"*2"DO NOT INCLUDE MOLD FLASH.
2.DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET.
15.9± 0.1
*1
12.10
2.40 2.40
0.80
0.80
D
36
19
7.5
7.0± 0.15
E
*2
HE
8.2
Detail F
Reference
Symbol
1
e
*3
bp
18
× M
Detail F
L
θ
Terminal cross section
A1
y S
0.20
1.28
1.26
c1
c
1.71
b1
A
S
3.35
bp
D
E
A2
A1
A
bp
b1
c
c1
θ
HE
e
x
y
Z
L
L1
Dimension in Millimeters
Min Nom Max
13.95 14.1 14.25
10.9 11.0 11.1
0.01
0.05
0.27
0.26
0.28
0.26
0°
14.0
0.32
0.30
0.32
0.30
14.2
0.65
0.10
3.6
0.37
0.34
0.37
0.34
8°
14.4
0.25
0.1
0.65
0.8
0.95
Ordering Information
Orderable Part Number
R2J25953SP-00-Q2
Quantity
700 pcs/ box
Shipping Container
Taping
Note: The symbol of 2nd "-" is occasionally presented as "#".
R07DS0044EJ0400 Rev.4.00
May 09, 2013
Page 16 of 16
Notice
1.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
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assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
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incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics.
6.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
7.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or systems manufactured by you.
8.
Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
9.
Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or
regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the
development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and
regulations and follow the procedures required by such laws and regulations.
10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the
contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics
products.
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.com
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2013 Renesas Electronics Corporation. All rights reserved.
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