RENESAS RAA207703GBM_13

Data Sheet
RAA207703GBM/7704GBM/7705GBM
R07DS0892EJ0100
Rev.1.00
Aug 02, 2013
Synchronous Buck Regulator with
Internal Power MOSFETs
Description
The RAA207703GBM is monolithic synchronous buck regulator with power MOSFETs in extremely small package.
The RAA207703GBM delivers high output current by small Rds(on) Power MOSFETs. Constant on time control
architecture provides fast transient response, and minimize external components. The RAA207703GBM operates skip
mode at light load, it provides high efficiency in all load condition. The RAA207703GBM incorporates internal 5V
LDO, so the regulator can operates single power supply. Three current ability products can be selected.
Features
·
·
·
·
·
·
·
·
·
·
·
·
·
·
·
·
Input voltage range: 5.5 V to 16 V (internal LDO use), 3.0 V to 16 V (external 5 V use)
Output voltage range: 0.8 V to 5.0 V
Constant-On-Time control
Built-in power MOSFETs suitable for PC, Server application
Internal 5 V LDO for single power supply operation
5 V LDO / external 5 V input selectable (LDO remote ON/OFF)
Switching frequency: Adjustable up to 2 MHz
High average output current, up to 15 A (7703GBM), 10 A (7704GBM), 5 A (7705GBM)
Controllable driver: Remote ON/OFF
Power Good function
Over current protection/Over voltage protection/Thermal shutdown function
Built-in bootstrapping diode
Soft Start period adjustable
Enhanced light load mode function for higher efficiency
Extremely small chip size package with solder bump
Pb-Free/Halogen-Free
Application Circuit
VIN
V5_OUT
SET
BOOT
VIN
AVIN
ON/OFF
SS RAA207703GBM
RAA207704GBM SW
RAA207705GBM
Vout
PGOOD
FB
LDO_EN#
PGND
SGND
R07DS0892EJ0100 Rev.1.00
Aug 02, 2013
Page 1 of 23
RAA207703GBM/7704GBM/7705GBM
Pin Arrangement
Top View
<RAA207703GBM>
<RAA207704GBM>
1
2
3
4
5
V5_
OUT
SGND
FB
LDO_
EN#
AVIN
BOOT
SET
PGO
OD
SS
SW
VIN
VIN
SW
SW
SW
<RAA207705GBM>
1
2
3
4
5
1
2
3
4
5
A
V5_
OUT
SGND
FB
LDO_
EN#
AVIN
A
V5_
OUT
SGND
FB
LDO_
EN#
AVIN
A
ON/
OFF
B
BOOT
SET
PGO
OD
SS
ON/
OFF
B
BOOT
SET
PGO
OD
SS
ON/
OFF
B
VIN
VIN
C
SW
VIN
VIN
VIN
VIN
C
SW
SW
VIN
VIN
VIN
C
SW
SW
VIN
D
SW
SW
SW
SW
VIN
D
SW
SW
PGND
PGND
PGND
D
PGND
PGND
PGND
PGND
E
SW
PGND
PGND
PGND
PGND
E
SW
SW
SW
PGND
PGND
F
SW
SW
SW
PGND
PGND
F
SW
PGND
PGND
PGND
PGND
G
Bottom View
<RAA207703GBM>
<RAA207704GBM>
5
4
3
2
1
AVIN
LDO_
EN#
FB
SGND
V5_
OUT
ON/
OFF
SS
PGO
OD
SET
VIN
VIN
VIN
VIN
SW
PGND
<RAA207705GBM>
5
4
3
2
1
A
AVIN
LDO_
EN#
FB
SGND
V5_
OUT
BOOT
B
ON/
OFF
SS
PGO
OD
SET
VIN
SW
C
VIN
VIN
VIN
SW
SW
SW
D
VIN
SW
PGND
PGND
PGND
SW
E
PGND
PGND
PGND
SW
SW
SW
F
PGND
PGND
PGND
PGND
PGND
SW
G
CSP 35-pin package
2.67 mm × 3.87 mm
R07DS0892EJ0100 Rev.1.00
Aug 02, 2013
5
4
3
2
1
A
AVIN
LDO_
EN#
FB
SGND
V5_
OUT
A
BOOT
B
ON/
OFF
SS
PGO
OD
SET
BOOT
B
VIN
SW
C
VIN
VIN
VIN
SW
SW
C
SW
SW
SW
D
PGND
PGND
PGND
SW
SW
D
PGND
PGND
PGND
SW
E
PGND
SW
SW
SW
F
CSP 30-pin package
2.67 mm × 3.37 mm
CSP 20-pin package
2.67 mm × 2.37 mm
Page 2 of 23
RAA207703GBM/7704GBM/7705GBM
Pin Description
Pin Name
Pin No.
Description
Remarks
V5_OUT
SGND
1A
2A
Controller voltage
Controller analog GND
FB
LDO_EN#
3A
4A
Feedback voltage input pin
Internal 5 V LDO enable pin
AVIN
BOOT
5A
1B
Analog input voltage
Bootstrap voltage pin
Should be connected to VIN on PCB pattern
To be supplied +5 V through integrated SBD
SET
PGOOD
2B
3B
Constant on time program pin
Power good indicator pin
Tie resistor between SW and SET pin
Pull low when No Good (open drain output)
SS
ON/OFF
4B
5B
Soft start period program pin
Operation enable pin
Tie capacitor between SS and SGND
Operation stop when "L" signal asserted
VIN
SW
—
—
Input voltage
Switching node
—
Power GND
PGND
Note:
Controller supply (5 V regulator output)
Should be connected to PGND on PCB pattern
Should be connected to SGND on PCB pattern
Pin assign of 1A-5A & 1B-5B is common through RAA207703GBM, RAA207704GBM and RAA207705GBM.
R07DS0892EJ0100 Rev.1.00
Aug 02, 2013
Page 3 of 23
RAA207703GBM/7704GBM/7705GBM
Block Diagram
V5_OUT
AVIN
VIN
Enable
ON/OFF
1M
5V LDO
TSD
LDO_EN#
TSD
1M
UVLO
4.3 V
SET
BOOT
UVLO
2.5 mA
Ripple
Comparator
0.8 V
+
+
–
SS
Enable
UVLO
Fault
1.0 V
–
OCP
OCP
1 shot
timer
OVP
+
FB
0.72 V
–
Control
Logic
UVLO
+
ZCD
Enable
PGOOD
TSD
delay
–
+
V5_OUT
Fault
Protection
Function
SW
ZCD
Comparator
Fault
OVP
PGND
TSD
OCP
OVP
SGND
1. Truth table for the ON/OFF pin
ON/OFF Input
Driver Chip Status
2. Truth table for LDO_EN# pin
LDO_EN# Input
5 V Regulator Status
"L"
"Open"
Shutdown (operation STOP)
Shutdown (operation STOP)
"L"
"Open"
LDO enable
LDO enable
"H"
Enable (Normal operation)
"H"
LDO disable
R07DS0892EJ0100 Rev.1.00
Aug 02, 2013
Page 4 of 23
RAA207703GBM/7704GBM/7705GBM
Absolute Maximum Ratings
(Ta = 25°C)
Item
Input voltage
Symbol
VIN, AVIN
Switch node voltage
BOOT voltage
SW
VBOOT
20(DC), 23(<10 ns)
25(DC), 28(<10 ns)
V
V
1
1, 2
Controller voltage
V5_OUT current
V5_OUT
ICC
–0.3 to +6
–20 to +0.1
V
mA
1
3
FB pin voltage
ON/OFF voltage
VFB
VON/OFF
–0.3 to V5_OUT +0.3
–0.3 to VIN
V
V
1, 4
1
LDO_EN# voltage
SET voltage
VLDO_EN#
VSET
–0.3 to VIN
–0.3 to VIN
V
V
1
1
PGOOD voltage
PGOOD sink current
VPGOOD
IPGOOD
–0.3 to VIN
+2
V
mA
1
3
Operating junction temperature
Storage temperature
Tj-opr
Tstg
–40 to +125
–55 to +150
°C
°C
Notes: 1.
2.
3.
4.
Ratings
–0.3 to +20
Unit
V
Notes
1
Rated voltages are relative to voltages on the SGND and PGND pins.
BOOT – V5_OUT < 20 V
For rated current, (+) indicates inflow to the chip and (–) indicates outflow.
V5_OUT + 0.3 V < 6 V
Thermal Information
Item
Thermal resistance
(junction to air when device is
mounted on evaluation board)
Note:
Symbol
qj-a
Part No.
Value
Unit
Note
RAA207703GBM
RAA207704GBM
27
33
°C/W
1
RAA207705GBM
39
1. Not assured value, just reference for design. Above data is taken using Renesas's reference board.
Recommended Operating Condition
Item
Input voltage
Symbol
VIN
Ratings
3.0 to 16
Unit
V
Analog input voltage
Controller voltage
AVIN
V5_OUT
4.5 to 16
4.5 to 5.5
V
V
Continuous output current
IOUT
0 to 15
0 to 10
0 to 5
A
R07DS0892EJ0100 Rev.1.00
Aug 02, 2013
Remarks
When V5_OUT is supplied externally
15 A: RAA207703GBM
10 A: RAA207704GBM
5 A: RAA207705GBM
Page 5 of 23
RAA207703GBM/7704GBM/7705GBM
Electrical Characteristics
(Ta = 25°C, VIN = 12 V, unless otherwise specified)
Item
Supply
Remote
ON/OFF
5 V LDO
enable
Symbol
Min
Typ
Max
Unit
Test Conditions
AVIN start threshold
VH
—
4.3
4.5
V
AVIN shutdown threshold in
CCM
VL
3.6
3.8
—
V
AVIN shutdown threshold in
ELL mode
VLDCM
—
3.0
3.6
V
In ELL mode
(DCM, fSW < 100 kHz)
AVIN quiescent current
Iq
—
400
550
mA
Output = no load, ELL mode
AVIN disable current
(LDO_EN# = 12 V)
IIAIN-DISBL1
—
70
150
mA
ON/OFF = 0 V,
LDO_EN# = 12 V
VIN disable current
(LDO_EN# = 0 V)
IIAIN-DISBL2
—
130
200
mA
ON/OFF = 0 V,
LDO_EN# = 0 V
AVIN operating current
(RAA207703GBM)
ICIN
—
40
—
mA
fSW = 1 MHz, ton = 200 ns
AVIN operating current
(RAA207704GBM)
ICIN
—
35
—
mA
AVIN operating current
(RAA207705GBM)
ICIN
—
20
—
mA
VIN disable current
IIIN-DISBL1
—
—
5
mA
ON/OFF = 0 V
3.3 / 5.0 V interface
Disable level
VDISBL
—
—
0.6
V
Enable level
VENBL
2.0
—
—
V
Pull-down resistance
RDISBL
0.7
1
1.3
MW
ON/OFF = 1 V
5 V LDO on level
VLDO_ON
—
—
0.6
V
5 V LDO off level
VLDO_OFF
2.0
—
—
V
Pull-down resistance
RLDO
0.7
1
1.3
MW
5 V LDO
output
5 V LDO output voltage
VLDO
4.5
5.0
5.5
V
FB
Comparator threshold voltage
VFB_COMP
792
800
808
mV
FB input current
IFB_IN
–0.1
0
+0.1
mA
FB = 1 V
1shot timer
High MOSFET on pulse width
PW
170
210
250
ns
VIN = 12 V, Rset = 30 kW
High MOSFET minimum on
pulse width
PMIN_ON
—
70
—
ns
High MOSFET minimum off
pulse
PMIN_OFF
—
50
—
ns
LDO_EN# = 1 V
at no load
Power
good
indicator
Rising threshold on FB
VPG_rise
0.67
0.72
0.77
V
Power good falling hysteresis
dVPG
—
50
—
mV
Power good resistance
RPG
0.25
0.5
1
kW
Soft start
Soft start bias current
ISS
1.8
2.5
3.3
mA
Over
voltage
protection
OVP trip voltage on FB
VOVP
0.95
1.00
1.05
V
Over
current
protection
OCP trip current
(RAA207703GBM)
IOCP
16.0
20.0
24.0
A
Fixed internally, inductor
peak current *1
OCP trip current
(RAA207704GBM)
IOCP
11.5
14.0
17.0
A
Fixed internally, inductor
peak current *1
OCP trip current
(RAA207705GBM)
IOCP
6.4
8.0
9.6
A
Fixed internally, inductor
peak current *1
TSD trip temperature
TTSD
130
150
—
°C
*1
Temperature hysteresis
Thys
—
15
—
°C
*1
Over
temperature
protection
Note:
FB = 0 V
*
1 Not directly tested. Assured by related characteristics test.
R07DS0892EJ0100 Rev.1.00
Aug 02, 2013
Page 6 of 23
RAA207703GBM/7704GBM/7705GBM
Efficiency Performance
(VIN = 12 V, L = 1 mH, fsw = 500 kHz (at CCM) no airflow, unless otherwise specified)
RAA207703GBM
Efficiency - Output Current (Light Load)
RAA207703GBM
Efficiency - Output Current (Heavy Load)
98
100
Vout = 5.0V
90
80
70
60
50
40
88
86
84
82
80
78
0.01
0.1
0
1
3
6
9
12
15
Iout (A)
Iout (A)
RAA207704GBM
Efficiency - Output Current (Light Load)
RAA207704GBM
Efficiency - Output Current (Heavy Load)
98
Vout = 3.3V
90
Vout = 5.0V
94
Efficiency (%)
Vout = 1.5V
V
Vout = 1.2
V
Vout = 1.0
70
60
50
40
92
Vout
= 1.8
V
Vout
= 1.5
V
90
Vou
t=1
.2V
Vou
t=
1.0V
88
86
84
30
82
20
80
10
0.001
Vout = 5.0V
Vout = 3.3
V
96
Vout = 1.8V
80
78
0.01
0.1
0
1
2
4
6
8
10
Iout (A)
Iout (A)
RAA207705GBM
Efficiency - Output Current (Light Load)
RAA207705GBM
Efficiency - Output Current (Heavy Load)
100
Vout = 1.8V
Vout = 3.3V
98
Vout = 5.0V
90
96
80
94
Vout = 1.0V
70
60
Efficiency (%)
Efficiency (%)
Vou
t=
1.8V
Vou
t=
1.5
V
Vo
ut
=1
.2V
Vo
ut
=1
.0V
90
20
100
Efficiency (%)
92
30
10
0.001
Vout =
5.0V
Vout
= 3.3
V
94
Vout = 1.5V
V
Vout = 1.2
V
Vout = 1.0
Efficiency (%)
Efficiency (%)
96
Vout = 3.3V
Vout = 1.8V
Vout = 1.2V
Vout = 1.5V
50
40
Vout = 3.3V
92
Vout =
1.8V
Vout =
1.5V
90
88
Vout
= 1.2
V
Vout
= 1.0
V
86
84
30
82
20
80
10
0.001
Vout = 5.0V
78
0.01
0.1
Iout (A)
R07DS0892EJ0100 Rev.1.00
Aug 02, 2013
1
0
1
2
3
4
5
Iout (A)
Page 7 of 23
RAA207703GBM/7704GBM/7705GBM
Operating Performance
(RAA207703GBM, VIN = 12 V, Vout = 1.2 V, L = 0.42 mH, Cout = 5 ´ 47 mF, ton = 130 ns,
unless otherwise specified)
Load Regulation Characteristics
Line Regulation Characteristics
1.220
1.220
1.215
1.215
1.210
1.210
Iout = 1A
1.205
Vout (V)
Vout (V)
VIN = 16V
VIN = 12V
1.200
1.195
VIN = 5V
1.205
Iout = 15A
1.200
Iout = 0A
1.195
1.190
1.190
1.185
1.185
1.180
1.180
0
2
4
6
8
10
12
14
6
16
8
10
14
12
Iout (A)
VIN (V)
Switching Frequency - Load
Characteristics
FB Voltage - Temperature
Characteristics
1200
16
820
815
1000
FB Voltage (V)
810
fsw (kHz)
800
600
400
805
800
795
790
200
785
0
0
2
4
6
8
Iout (A)
R07DS0892EJ0100 Rev.1.00
Aug 02, 2013
10
12
14
16
780
–50
–25
0
25
50
75
100
125
Temperature (°C)
Page 8 of 23
RAA207703GBM/7704GBM/7705GBM
Operating Waveform
(RAA207703GBM, VIN = 12 V, Vout = 1.2 V, L = 0.42 mH, Cout = 5 ´ 47 mF, ton = 130 ns,
unless otherwise specified)
Typical Operation at Full Load
Typical Operation at No Load
IL: 5A/div.
IL: 5A/div.
Vout: 20mV/div.
Vout: 20mV/div.
SW: 10V/div.
SW: 10V/div.
400ns/div.
400ns/div.
Soft-start at Full Load
Soft-start at No Load
IL: 5A/div.
IL: 5A/div.
PGOOD: 5V/div.
PGOOD: 5V/div.
Vout: 1V/div.
Vout: 1V/div.
ON/OFF: 5V/div.
ON/OFF: 5V/div.
400ms/div.
400ms/div.
Soft-discharge Shutdown
Load Transient (0 A to 10 A)
IL: 5A/div.
PGOOD: 5V/div.
IL: 5A/div.
Vout: 1V/div.
Vout: 50mV/div.
ON/OFF: 5V/div.
1ms/div.
R07DS0892EJ0100 Rev.1.00
Aug 02, 2013
200ms/div.
Page 9 of 23
RAA207703GBM/7704GBM/7705GBM
Description of Operation
The RAA207703GBM operates as voltage-ripple based constant on time control architecture. Converter output is
controlled by output voltage ripple which is determined by inductor ripple current and ESR & ESL of output capacitor.
Each switching cycle starts High-side MOSFET turn on which time is decided by 1 shot timer. After High-side
MOSFET turns off, Low side turns on, and it keeps until FB voltage becomes lower than reference voltage. In light load
condition, Low-side MOSFET on time is decided by inductor zero current.
Switching Frequency, Constant on Time Setting
Rset
SET
SW
Switching Frequency in CCM mode is determined by following equation.
Switching Frequency: (Vout / VIN) • (1 / ton) [Hz] ¼(1)
Here, ton is High-side MOSFET on time, and it is determined by following equation.
On time pulse: (50 pF • 1 V / (VIN – 2.0 V)) • Rset + 60 ns [s] ¼(2)
From above equation, constant on time is change depend on VIN, so switching frequency is almost constant when VIN
change. This architecture is suitable for battery application. From the above equation, Rset is calculated by
Rset: (Vout / (VIN • Fsw) – 60 ns) • (VIN – 2.0 V) / (50 pF • 1 V) [W] ¼(3)
Here, Fsw is switching frequency.
1000
1300
VIN = 5 V
900
Rset = 30 kW
1100
VIN = 12 V
Rset = 10 kW
1000
700
On Time [ns]
On Time [ns]
800
Rset = 51 kW
1200
VIN = 8.5 V
600
500
400
900
800
700
600
500
400
300
300
200
100
10
200
100
20
30
40
50
60
Rset [kW]
70
80
90
100
4
6
8
10
12
14
16
VIN [V]
Minimum on time is 70 ns (typ.), so recommended on time pulse is more than 100 ns. Maximum operating frequency is
restricted by minimum on time and minimum off time (50 ns, please see next chapter).
R07DS0892EJ0100 Rev.1.00
Aug 02, 2013
Page 10 of 23
RAA207703GBM/7704GBM/7705GBM
Maximum Duty Cycle Operation
Maximum duty cycle is restricted by following equation.
Max. duty: 1 – (50 ns • Fsw) ¼(4)
Here, 50 ns means High-side minimum off time.
If FB voltage does not reach reference voltage after the High-side MOSFET turn on time is expired, Low-side
MOSFET turns on 50 ns, and next switching cycle starts. Especially, this condition occurs when output load transient
state.
SW
50 ns
IL
(inductor current)
Soft Start
SS
SGND
Css
Soft start ramp period is adjustable by external capacitor (Css) selection. When converter start operating, 2.5 mA current
from SS pin charges capacitor between SS and GND. Soft start period is determined by following equation.
Soft Start period: Css • 0.8 V / 2.5 mA [s] ¼(5)
Here, 0.8 V is internal reference voltage Vref. IC operates diode emulation mode at Soft start period, so it can prevent
from reverse current when pre-bias condition. Soft start restarts when Enable signal re-entered, and after OCP, OVP,
TSD, UVL release condition.
Power Good Indicator
Power good indicator is useful for controlling multi-converter systems for sequential start up and shut down. FB voltage
is monitored continuously by power good comparator. The power good comparator compares FB pin and 90% internal
reference voltage (0.72 V). When FB reaches reference voltage, PGOOD pin becomes high impedance after internal
delay (30% of soft start period). Under the fault condition (UVLO, OVP, OCP, TSD), PGOOD pin is pulled low.
0.80 V
0.72 V
SS
FB
Vout
PGOOD
Soft start period
Power Good delay
(30% soft start period)
Note: PGOOD pin is connected V5_OUT through resistor.
R07DS0892EJ0100 Rev.1.00
Aug 02, 2013
Page 11 of 23
RAA207703GBM/7704GBM/7705GBM
Over Voltage Protection (OVP)
When FB voltage exceeds 125% of reference voltage (1.00 V), switching stops immediately and latched Low-side
MOSFET on state in order to pull the output voltage. To leave the OVP condition, V5_OUT needs to be pulled under
the UVLO level, and re-enter the signal.
125% Vref
FB
High MOSFET
signal
Low MOSFET
signal
V5_OUT
delay
PGOOD
Note: PGOOD pin is connected V5_OUT through resistor.
Over Current Protection (OCP)
OCP detection circuit monitors High-side MOSFET drain-source current. When the current exceeds fixed level four
times, IC starts hiccup operation. In the hiccup operation, switching stops and operate 1 ms timer. After 1 ms timer is
expired, IC operates again from soft start state. If IC detect OCP in the soft start circuit, hiccup operation start again.
PGOOD
SS
OCP detect
OCP
level
IL
0A
SW
1 ms wait
1 ms wait
Note: PGOOD pin is connected V5_OUT through resistor.
Thermal Shutdown (TSD)
Thermal sensor monitors junction temperature of IC. When junction temperature exceeds 150°C, switching stops. After
junction temperature become 135°C, IC restart switching from soft start (Non-latched function).
Enhanced Light Load Function (ELL)
IC operates diode emulation mode in light load condition. To enhance light load efficiency, IC detects light load
condition automatically, and operate as Enhanced Light Load mode (ELL). In ELL mode, bias current of IC becomes
small, so this function can improve the efficiency.
R07DS0892EJ0100 Rev.1.00
Aug 02, 2013
Page 12 of 23
RAA207703GBM/7704GBM/7705GBM
Start-up Sequence for External 5 V Use
When LDO function is used, start-up sequence is free. However, it needs specific start-up sequence when LDO function
is not used. Please set start-up sequence from following. IC cannot start-up when "V5_OUT & ON/OFF rise first, VIN
rises secondly" sequence.
(1) VIN to V5_OUT (ON/OFF is pulled up to V5_OUT)
VIN
4.3 V
V5_OUT (ON/OFF)
Vout
Soft start period
(2) VIN or V5_OUT to ON/OFF (ON/OFF = "H" asserted after VIN & V5_OUT rise)
VIN (or V5_OUT)
V5_OUT (or VIN)
ON/OFF
Vout
Soft start period
Note: VIN, V5_OUT sequence does not matter in this start-up.
ON/OFF Pin Slew Rate Restriction
When ON/OFF pin is driven by another controller, the slew rate of H to L transition must be higher than –5 V/ms
monotonically (must be rapid transition). If the slew rate is lower than –5 V/ms (slow transition), switching noise affect
ON/OFF pin input circuit and lead to malfunction in case of heavy load state. Recommended drive impedance of
ON/OFF pin is less than 10 kW. If ON/OFF pin is always pulled up to V5_OUT or VIN via resistance, slew rate is not a
matter.
5V
more than
–5V/ms
5V
V5_OUT
ON/OFF
Slew rate restriction:
ON/OFF is controlled externally
R07DS0892EJ0100 Rev.1.00
Aug 02, 2013
V5_OUT
ON/OFF
No slew rate restriction:
ON/OFF is connected via resistance
Page 13 of 23
RAA207703GBM/7704GBM/7705GBM
Controller Power Supply
The RAA207703GBM incorporates internal 5 V LDO, so it can operate with single power supply. LDO_EN# can
control LDO operation, and select the controller power supply from LDO or V5_OUT pin. When LDO_EN# = H state,
external 5 V should be applied to V5_OUT pin and AVIN pin.
Typical pin connection of each operation are below.
VIN
V5_OUT
AVIN
5V
VIN
VIN
V5_OUT
LDO_EN#
AVIN
VIN
LDO_EN#
Operation with single power supply
Operation with multi power supply
Note: Truth table for LDO_EN# pin
LDO_EN# Input
"L"
5 V Regulator Status
LDO enable
"Open"
"H"
LDO enable
LDO disable
Stability Criteria, Output Voltage Setting for High ESR Output Capacitor
Small output ripple voltage makes control loop unstable in constant on time architecture. Ripple voltage needs to be
larger than 15 mV on FB pin. When using high ESR (>50 mW) capacitor such as Electrolytic capacitor, Polymer
aluminum capacitor for output capacitor, ripple voltage on FB pin will be more than 15 mV.
VIN
Lout
Vout
SW
FB
R1
ESR
R2
Cout
Stability criteria
From loop stability analysis, constant on time control system must satisfy below equation.
Stability criteria: ESR • Cout > ton / 2 ¼(6)
Here, ton is constant on time. If the system cannot satisfy above equation, subharmonic oscillation will occur.
Vout setting
FB comparator compares FB voltage and internal accurate reference voltage (0.8 V). Feedback loop controls FB voltage
to match the reference voltage. However, Vout ripple voltage affects FB voltage. So, effective FB pin voltage Vfb will
be below. (Here, Vout ripple from bulk capacitance is ignored)
Effective FB voltage (Vfb): 0.8 V + ½ ((VIN – Vout) • ton • ESR • R2 / (Lout • (R1 + R2))) [V] ¼(7)
Here, R1 and R2 is output voltage divider resistor, Lout is inductance of output filter and ESR means ESR of output
capacitor (refer to above figure). 0.8 V in above equation means reference voltage of IC. Considering Vout ripple
voltage, Vout voltage becomes below equation.
Vout: Vfb • (R1 + R2) / R2 [V] ¼(8)
R07DS0892EJ0100 Rev.1.00
Aug 02, 2013
Page 14 of 23
RAA207703GBM/7704GBM/7705GBM
Operating with Small ESR Output Capacitor
When using low-ESR output capacitor like MLCC, voltage ripple on output voltage node is very small. So, voltage
ripple needs to be enhanced by additional components. Recommended ripple enhance method is like below figure.
VIN
Lout
Vout
SW
FB
Rf
Cf
R1
ESR(<5mW)
R2
Cout
Cr
Ripple injection on FB pin
Rf and Cf make ripple voltage using inductor DCR ripple. Cr is used for AC ripple injection to FB pin. Ripple voltage
between Rf and Cf is described by following equation.
Vripple: (VIN – Vout) • ton / (Rf • Cf) [V] ¼(9)
Rf: (VIN – Vout) • ton / (Vripple • Cf) [V] ¼(10)
Recommended ripple voltage is between 15 mV and 20 mV.
Stability criteria
To keep voltage ripple amplitude on FB pin, below equation should be satisfied.
Stability criteria(1): 1 / (2p • Cf • Fsw) << 1 / (2p • Cr • Fsw) << R1 • R2 / (R1 + R2) ¼(11)
Here, Fsw means switching frequency at CCM mode. Recommended value for Cf = 0.01 mF, and Cr = 1000 pF. R1 and
R2 are recommended between 10 kW and 100 kW.
From loop stability analysis of above circuit configuration, the system must satisfy below equation.
Stability criteria(2): Lout • Cout / (Rf • Cf) > ton / 2 ¼(12)
If the system cannot satisfy above equation, subharmonic oscillation will occur. Capacitance - voltage dependence is
must be considered when MLCC use.
Vout setting
Additional ripple voltage and ESR voltage ripple also affects Vout accuracy. From above figure, total ripple voltage on
FB pin is described by below equation.
Ripple voltage on FB pin: (VIN – Vout) • ton / (Rf • Cf) + (VIN – Vout) • ton • ESR / (Lout) [V] ¼(13)
Effective FB pin voltage is described by below equation.
Effective FB voltage (Vfb):
0.8 V + ½ ((VIN – Vout) • ton / (Rf • Cf) + (VIN – Vout) • ton • ESR / (Lout)) [V] ¼(14)
So, actual Vout voltage is described by below equation.
Vout: Vfb • (R1 + R2) / R2 [V] ¼(15)
R07DS0892EJ0100 Rev.1.00
Aug 02, 2013
Page 15 of 23
RAA207703GBM/7704GBM/7705GBM
BOOT Resistance
0.1m/25V
BOOT
Rboot
SW
SW node spike occurs when IC is operating. Turn-on spike voltage exceeds absolute maximum voltage of SW pin
depends on operating condition. To suppress the spike voltage, adding boot resistor (Rboot) is effective. Recommended
Rboot is below.
Recommended Rboot
Part No.
RAA207703GBM
RAA207704GBM
RAA207705GBM
R07DS0892EJ0100 Rev.1.00
Aug 02, 2013
VIN = 12 V
3.9 W
VIN = 5 V
0W
2.0 W
0W
0W
0W
Page 16 of 23
RAA207703GBM/7704GBM/7705GBM
Design Example
(VIN = 12 V, Vout = 1.2 V, Fsw = 500 kHz (at CCM), L = 0.47 mH)
ON/OFF
C3
C1
C2
R4
30k
R5
3.9
3300p/10V
51k
1m/10V
R3
C4
13k
15k
22m/6.3V
22m/6.3V
22m/6.3V
22m/6.3V
C113
C114
C115
22m/6.3V
C112
C111
R1
0.01m/25V
27k
R6
C5
B1
B2
B3
B4
B5
C1
D1
D2
D3
D4
E1
F1
F2
F3
G1
R2
10m/16V
C103
RAA207703GBM
SW_C1
SW_D1
SW_D2
SW_D3
SW_D4
SW_E1
SW_F1
SW_F2
SW_F3
SW_G1
1000p/25V
10m/16V
C102
VIN_C2
VIN_C3
VIN_C4
VIN_C5
VIN_D5
PGND_E2
PGND_E3
PGND_E4
PGND_E5
PGND_F4
PGND_F5
PGND_G2
PGND_G3
PGND_G4
PGND_G5
10m/16V
C101
C2
C3
C4
C5
D5
Vout
L1
0.47mH
E2
E3
E4
E5
F4
F5
G2
G3
G4
G5
+12V
BOOT
SET
PGOOD
SS
ON/OFF
V5_OUT
SGND
FB
LDO_EN#
AVIN
U7
A1
A2
A3
A4
A5
0.1m/25V
1. Setting of ton (constant on time)
In this condition, calculated on time is from equation (1),
Calculated ton: 1.2 V / 12 V • (1 / 500 kHz) = 200 ns
From equation (3),
Calculated R4 = (1.2V / (12 V • 500 kHz) – 60 ns) • (12 V – 2 V) / (50 pF • 1 V) = 28 kW
so choose R4 = 30 kW from E24 series.
So, actual on pulse ton is decided by equation (2),
Constant on time: ((50 pF • 1 V / (12 V – 2 V)) • 30 kW + 60 ns = 210 ns
2. Setting of ripple injection resistance
Voltage ripple on FB pin needs to be more than 15 mV. Here, C4 = 0.01 mF, C5 = 1000 pF and ESR of output cap =
0.5 mW. To obtain 15 mV additional ripple on FB pin from R6, C4 and C5 network circuit, R6 is calculated by
equation (10).
Calculated R6: (12 V – 1.2 V) • 210 ns / (15 mV • 0.01 mF) = 15.1 kW
So choose R6 = 15 kW from E24 series and actual ripple voltage from injection circuit becomes 15.1 mV.
So, Total ripple voltage on FB pin is calculate by equation (13),
Total ripple voltage:
(12 V – 1.2 V) • 210 ns / (15 kW • 0.01 mF) + (12 V – 1.2 V) • 210 ns / 0.47 mH • 0.5 mW =17.5 mV
3. Setting of output voltage resistor
From above setting, effective FB voltage is from equation (15),
Effective FB voltage: 800 mV + 17.5 mV / 2 = 808.8 mV
When R1 = 13 kW, R2 is decided from equation (15).
R2 = 13 kW / ((1.2 V / 808.8 mV) – 1) = 26.8 kW
So, choose R2 = 27 kW from E24 series.
R07DS0892EJ0100 Rev.1.00
Aug 02, 2013
Page 17 of 23
RAA207703GBM/7704GBM/7705GBM
4. Stability criteria confirmation
For output capacitor, please confirm stability criteria. Stability criteria from equation (11),
1 / (2p • 0.01 mF • 500 kHz) = 32 W << 1 / (2p • 1000 pF • 500 kHz) = 318 W << 13 kW • 27 kW / (13 kW
+ 27 kW) = 8.8 kW
so, above criteria is satisfied.
For output capacitor, please confirm stability criteria. Stability criteria from equation (12),
Cout > (210 ns / 2) • 15 kW • 0.01 mF / 0.47 mH = 34 mF
So, choose 110 mF (22 mF ´ 5 pcs.) for output capacitor. Here, please consider voltage dependence of capacitor.
If you cannot satisfy above criteria, please consider below changes.
¾ increase L or Cout value
¾ increase frequency (decrease constant on time)
¾ change Rf value.
5. Other components
C1 = 1 mF / 10 V and C2 = 0.1 mF / 25 V are recommended. C3 decides soft start period from equation (5). R5 is
decided from the table in “Boot Resistance” section. Input and output capacitors are decided considering voltage
ripple, current ripple and voltage tolerance.
R07DS0892EJ0100 Rev.1.00
Aug 02, 2013
Page 18 of 23
RAA207703GBM/7704GBM/7705GBM
Board Layout Example (RAA207703GBM)
Board layer example: 4 layer, internal 2nd and 3rd layer are used for GND plane.
SW
plane
VIN plane
SW
plane
VIN plane
GND plane
Vout
plane
GND plane
Top Layer
Bottom Layer
1. Power part
¾ Input capacitor should be placed close to VIN and PGND pin to reduce switching noise and to improve the
efficiency.
¾ Many thermal via should be placed on VIN, SW and PGND planes to spread heat to board. Furthermore, VIN,
SW planes on bottom layer are effective for thermal spread (If available).
2. Control part
¾ Decoupling capacitor between V5_OUT and SGND should be placed as close as possible to the chip in order to
stable operation.
¾ Also, SGND, PGND via should be placed as close as possible to the chip, and connect each pin low impedance
by internal GND plane.
¾ FB resistance should be placed close to chip and FB wiring should be short to avoid noise. Furthermore,
additional ripple circuit wiring should be kept away from high dv/dt plane such as SW and BOOT wiring.
¾ To ensure the reliability of chip - board connection, we recommend Solder Mask Defined (SMD) layout. But
you can also use Non-Solder Mask Defined (NSMD) layout as far as you can ensure the reliability. In the case of
SMD layout, we recommend below size.
Solder resist open size: 280 mm, Land size: 280 mm + 50 to 100 mm (please consider processing accuracy)
R07DS0892EJ0100 Rev.1.00
Aug 02, 2013
Page 19 of 23
RAA207703GBM/7704GBM/7705GBM
Representative Inductors
Maker
NEC Tokin
MPC series
ALPS Green Device
GLMC series
TOKO
FDVE0630 series
TDK
SPM5030 series
Note:
Inductance [mH]
0.42
DL/L0 = 20% Change [A]
20.0
Dimensions [mm]
6.7 ´ 8.0 ´ 4.0
0.60
0.88
19.0
24.0
6.7 ´ 8.0 ´ 5.0
10.0´ 11.5 ´ 4.0
1.0
0.47
25.0
1
13.9 *
10.0 ´ 11.7 ´ 5.5
6.5 ´ 7.4 ´ 3.0
1.0
1.5
10 *
1
8.8 *
1
6.5 ´ 7.4 ´ 3.0
6.5 ´ 7.4 ´ 3.0
0.33
0.47
15.9
15.6
6.7 ´ 7.4 ´ 3.0
6.7 ´ 7.4 ´ 3.0
0.75
1.0
10.9
9.5
6.7 ´ 7.4 ´ 3.0
6.7 ´ 7.4 ´ 3.0
0.35
0.47
14.9
11.0
5.0 ´ 5.2 ´ 3.0
5.0 ´ 5.2 ´ 3.0
0.75
9.7
5.0 ´ 5.2 ´ 3.0
Inductance [mH]
DL/L0 = 30% Change [A]
Dimensions [mm]
0.68
1.0
8.3
6.8
4.2 ´ 4.2 ´ 2.0
4.2 ´ 4.2 ´ 2.0
1.5
0.47
5.7
8.3
4.2 ´ 4.2 ´ 2.0
4.4 ´ 4.1 ´ 1.2
1.0
4.8
4.4 ´ 4.1 ´ 1.2
*
1 30% change
· Small size inductor for RAA207705GBM
Maker
TOKO
FDSD0420 series
TDK
SPM4012 series
Representative Output Capacitors
Maximum Voltage [V]
Capacitance [mF]
Sanyo POSCAP series
Sanyo OS-CON series
Maker
2.0 to 10
2.0 to 10
47 to 330
47 to 330
Murata MLCC series
TDK MLCC series
6.3 to 10
6.3 to 10
22 to 47
22 to 47
TAIYO YUDEN MLCC series
6.3 to 10
22 to 47
R07DS0892EJ0100 Rev.1.00
Aug 02, 2013
Page 20 of 23
RAA207703GBM/7704GBM/7705GBM
Package Dimensions
· RAA207703GBM
MASS[Typ.]
0.02g
Unit: mm
A
2.67 ± 0.05
0.5
0.335 ± 0.05
3.34
2.0
0.335 ± 0.05
0.67
Previous Code
—
0.265 ± 0.05
RENESAS Code
SWBG0035ZA-A
0.67
JEITA Package Code
—
A
3.87 ± 0.05
B
B
C
D
E
F
0.5
0.5
0.265 ± 0.05
ø 0.05 M S AB
0.4 ± 0.04
35– ø0.32 ± 0.05
0.5
5 4 3 2 1
0.05
0.5
4×
0.33
G
S
SEATING PLANE
0.08 S
Note:
1. Ball pitch dimension is specified with the center of balls.
2. Datum A and B are axes defined by the ball grid array, not by the Package Outline.
R07DS0892EJ0100 Rev.1.00
Aug 02, 2013
0.235 ± 0.04
C area
C area
Page 21 of 23
RAA207703GBM/7704GBM/7705GBM
· RAA207704GBM
MASS[Typ.]
0.02g
Unit: mm
A
0.5
0.335 ± 0.05
2.67 ± 0.05
0.335 ± 0.05
2.84
2.0
0.67
Previous Code
—
0.265 ± 0.05
RENESAS Code
SWBG0030ZA-A
0.67
JEITA Package Code
—
3.37 ± 0.05
A
B
B
C
0.5
0.265 ± 0.05
ø 0.05 M S AB
0.4 ± 0.04
30– ø0.32 ± 0.05
0.5
5 4 3 2 1
0.05
0.5
4×
0.08
D
E
F
S
SEATING PLANE
0.08 S
Note:
1. Ball pitch dimension is specified with the center of balls.
2. Datum A and B are axes defined by the ball grid array, not by the Package Outline.
R07DS0892EJ0100 Rev.1.00
Aug 02, 2013
0.235 ± 0.04
C area
C area
Page 22 of 23
RAA207703GBM/7704GBM/7705GBM
· RAA207705GBM
JEITA Package Code
—
RENESAS Code
SWBG0020ZA-A
Previous Code
—
MASS[Typ.]
0.01g
Unit: mm
2.37 ± 0.05
A
1.84
0.67
0.5
0.335 ± 0.05
1.84
2.67 ± 0.05
0.265 ± 0.05
2.0
0.335 ± 0.05
0.67
A
B
B
5
4 3
2 1
0.25
0.05
ø 0.05 M S AB
0.4 ± 0.04
20– ø0.32 ± 0.05
0.5
4×
0.265 ± 0.05
C
D
S
SEATING PLANE
0.08 S
0.235 ± 0.04
C area
C area
Note:
1. Ball pitch dimension is specified with the center of balls.
2. Datum A and B are axes defined by the ball grid array, not by the Package Outline.
Ordering Information
Part Name
Quantity
Shipping Container
RAA207703GBM#HC0
RAA207704GBM#HC0
2000 pcs
2000 pcs
Taping Reel
Taping Reel
RAA207705GBM#HC0
2000 pcs
Taping Reel
R07DS0892EJ0100 Rev.1.00
Aug 02, 2013
Page 23 of 23
Notice
1.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
2.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
3.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
4.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or
5.
Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on
third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product.
the product's quality grade, as indicated below.
"Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic
equipment; and industrial robots etc.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc.
Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical
implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it
in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses
incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics.
6.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
7.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or systems manufactured by you.
8.
Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
9.
Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or
regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the
development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and
regulations and follow the procedures required by such laws and regulations.
10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the
contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics
products.
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2013 Renesas Electronics Corporation. All rights reserved.
Colophon 2.2