MICROCHIP RE46C167E16F

RE46C165/6/7/8
CMOS Photoelectric Smoke Detector ASIC
with Interconnect, Timer Mode and Alarm Memory
Features
Description
• Temporal Horn Pattern or Continuous Tone
• Alarm Memory
• Sensitivity Control Times:
- 9 minutes (RE46C165/6)
- 1.2 minutes (RE46C167/8)
• I/O Filter and Charge Dump
• Interconnect up to 40 Detectors
• Internal Power-on Reset
• >2000V ESD Protection (HBM) on All Pins
• Low Quiescent Current Consumption (<8 µA)
• Internal Low Battery Detection and Chamber Test
• RoHS Compliant Lead-Free Packaging
The RE46C165/6/7/8 devices are low-power, CMOS
photoelectric type, smoke detector ICs. With minimal
external components, these circuits will provide all the
required features for a photoelectric type smoke
detector.
Each design incorporates a gain selectable photo
amplifier for use with an infrared emitter/detector pair.
An internal oscillator strobes power to the smoke
detection circuitry for 100 µs every 10 seconds to keep
standby current to a minimum. If smoke is sensed, the
detection rate is increased to verify an alarm condition.
A high gain mode is available for push button chamber
testing.
A check for a low battery condition and chamber
integrity is performed every 43 seconds when in
standby. The temporal horn pattern supports the
NFPA 72 emergency evacuation signal.
An interconnect pin allows multiple detectors to be
connected so when one unit alarms, all units will sound.
A charge dump feature will quickly discharge the
interconnect line when exiting a local alarm. The
interconnect input is also digitally filtered.
An internal timer allows for single button, push-to-test
to be used for a reduced sensitivity mode.
An alarm memory feature allows the user to determine
if the unit has previously entered a local alarm
condition.
Utilizing
low-power
CMOS
technology,
the
RE46C165/6/7/8 was designed for use in smoke
detectors that comply with Underwriters Laboratory
Specification UL217 and UL268.
 2010 Microchip Technology Inc.
DS22251A-page 1
RE46C165/6/7/8
Package Types
RE46C165/6/7/8
PDIP, SOIC
C1
1
16
TEST
C2
2
15
VSEN
DETECT
3
14
VSS
STROBE
4
13
ROSC
VDD
5
12
COSC
IRED
6
11
LED
IO
7
10
FEED
HORNB
8
9
HORNS
Functional Block Diagram
VDD (5)
R1
276K
R2
124K
VSS (14)
IO (7)
+
+
-
VSEN (15)
FEED (10)
HS (9)
Logic
and
Timing
LED (11)
VDD – 3.5V
STROBE (4)
Reference
VDD – 5V
DETECT (3)
C1 (1)
HB (8)
Photoamp
+
-
Bias and
Power
Reset
IRED (6)
Oscillator
ROSC (13)
C2 (2)
TEST (16)
COSC (12)
DS22251A-page 2
 2010 Microchip Technology Inc.
RE46C165/6/7/8
Typical Application
RADJ1
1.0M
R3
8.2k
Push-to-Test
C1 47 nF
C2 4.7 nF R4
R2
5k
RADJ2
120k
560
D6
R1
4.7k
R5
Photo
Chamber
249k
1 C1
TEST 16
2 C2
VSEN 15
3 DETECT
VSS 14
4 STROBE
ROSC 13
C4
100 µF
R9
D3
COSC 12
R13
6 IRED
R7
22
7 IO
8 HORNB
To Other Units
C5
1.5 nF
Q3
D5
1k
R12
10M
9V
Battery
100k
5 VDD
R6
C3 (1,2)
1 µF
LED 11
330
FEED 10
HORNS 9
R8
330
C6(3)
1.0 nF
R11(3)
220k
R10(3)
1.5M
C7
10 µF
Note 1: C3 should be located as close as possible to the device power pins.
2: C3 is typical for an alkaline battery. This capacitance should be increased to 4.7 µF or greater for a
carbon battery.
3: R10, R11 and C6 are typical values and may be adjusted to maximize sound pressure.
 2010 Microchip Technology Inc.
DS22251A-page 3
RE46C165/6/7/8
NOTES:
DS22251A-page 4
 2010 Microchip Technology Inc.
RE46C165/6/7/8
1.0
† Notice: Stresses above those listed under “Maximum
ratings” may cause permanent damage to the device. This
is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operation listings of this specification is not
implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
VDD ...........................................................................12.5V
Input Voltage Range Except FEED, I/O .. VIN = -.3V to VDD +.3V
FEED Input Voltage Range ............... VINFD =-10 to +22V
I/O Input Voltage Range .......................... VIO1= -.3 to 15V
Input Current except FEED, TEST, VSEN ...... IIN = 10 mA
Input Current for FEED, VSEN....................... IIN = 500 µA
Operating Temperature ..........................TA = -25 to +75°C
Storage Temperature.......................TSTG = -55 to +125°C
Maximum Junction Temperature ................... TJ = +150°C
DC ELECTRICAL CHARACTERISTICS
DC Electrical Characteristics: Unless otherwise indicated, all parameters apply at TA = -25° to +75°, VDD = 9V,
Typical Application (unless otherwise noted), VSS = 0V
Parameter
Supply Voltage
Supply Current
Input Voltage High
Input Voltage Low
Input Leakage Low
Note 1:
2:
3:
Symbol
Test
Pin
Min
Typ
Max
Units
VDD
5
6
—
12
V
Operating
Conditions
IDD1
5
—
4
6
µA
COSC = VSS, LED off
IDD2
5
—
5.5
8
µA
COSC = VSS, LED off,
VDD = 12V
IDD3
5
—
—
2
mA
COSC = VSS,
STROBE on IRED off
IDD4
5
—
—
3
mA
COSC = VSS,
STROBE on, IRED on,
Note 1
VIH1
10
6.2
4.5
—
V
FEED
VIH2
7
3.2
—
—
V
No local alarm,
I/O as an input
VIH3
15
1.6
—
—
V
VSEN
VIH4
16
8.5
—
—
V
TEST
VIL1
10
—
4.5
2.7
V
FEED
VIL2
7
—
—
1.5
V
No local alarm,
I/O as an input
VIL3
15
—
—
0.5
V
VSEN
VIL4
16
—
—
7
V
TEST
IIL1
1, 2, 3
—
—
-100
nA
VDD = 12V, COSC = 12V,
STROBE active
IIL2
12, 10
—
—
-100
nA
VDD = 12V, VIN = VSS
IIL3
15, 16
—
—
-1
µA
VDD = 12V, VIN = VSS
ILFD
10
—
—
-50
µA
FEED = -10V
Does not include Q3 emitter current.
Not production tested.
Production test at room temperature with guard banded limits.
 2010 Microchip Technology Inc.
DS22251A-page 5
RE46C165/6/7/8
DC ELECTRICAL CHARACTERISTICS (CONTINUED)
DC Electrical Characteristics: Unless otherwise indicated, all parameters apply at TA = -25° to +75°, VDD = 9V,
Typical Application (unless otherwise noted), VSS = 0V
Parameter
Input Leakage High
Input Pull Down
Current
Symbol
Test
Pin
Min
Typ
Max
Units
IIH1
1, 2
—
—
100
nA
VDD = 12V, VIN = VDD,
STROBE active
IIH2
3, 10,
12
—
—
100
nA
VDD = 12V, VIN = VDD
IHFD
10
—
—
50
µA
FEED = 22V
Conditions
IPD1
16
0.25
—
10
µA
VIN = VDD
IPD2
15
0.1
0.25
0.5
µA
VIN = VDD
IPDIO1
7
20
—
80
µA
VIN = VDD
IPDIO2
7
—
—
140
µA
VIN = 15V, VDD = 12V
Output Off Leakage
Low
IOZL1
11, 13
—
—
-1
µA
Outputs off, Output = VSS
Output Off Leakage
High
IOZH1
11, 13
—
—
1
µA
Outputs off, Output = VDD
Output High Voltage
VOH1
8, 9
5.5
—
—
V
IOH = -16 mA, VDD = 6.5V
Output Low Voltage
VOL1
8, 9
—
—
1
V
IOL = 16 mA, VDD = 6.5V
VOL2
13
—
.5
—
V
IOL = 5 mA, VDD = 6.5V
VOL3
11
—
—
0.6
V
IOL = 10 mA, VDD = 6.5V
IIOH1
7
-4
—
-16
mA
Alarm, VIO = VDD - 2V
or VIO = 0V
IIODMP
7
5
—
—
mA
At Conclusion of Local
Alarm or Test, VIO = 1V
Output Current
Low Battery Voltage
VLB
5
6.9
7.2
7.5
V
VSTOF
4
VDD -.1
—
—
V
STROBE off, VDD = 12V,
IOUT = -1 µA
VSTON
4
VDD -5.25
VDD -5
VDD -4.75
V
STROBE on, VDD = 9V,
IOUT = 100 µA to 500 µA
VIREDOF
6
—
—
0.1
V
IRED off, VDD = 12V,
IOUT = 1 µA
VIREDON
6
2.85
3.1
3.35
V
IRED on, VDD = 9V,
IOUT = 0 to -6 mA,
TA = +25°C
Common Mode
Voltage
VCM1
1, 2, 3
0.5
—
VDD-2
V
Local smoke, Push-to-Test
or Chamber Test, Note 2
Smoke Comparator
Reference
VREF
—
VDD -3.7
VDD -3.5
VDD -3.3
V
Internal Reference, Note 2
Temperature
Coefficient
TCST
4
—
0.01
—
%/°C
STROBE output voltage,
VDD = 6V to 12V
TCIRED
6
—
0.3
—
%/°C
IRED output voltage,
VDD = 6V to 12V
VSTON
4, 5
—
-50
—
dB
STROBE output (vs. VDD),
VDD = 6V to 12V
VIREDON
6, 5
—
-30
—
dB
IRED output voltage,
VDD = 6V to 12V
Output Voltage
Line Regulation
Note 1:
2:
3:
Does not include Q3 emitter current.
Not production tested.
Production test at room temperature with guard banded limits.
DS22251A-page 6
 2010 Microchip Technology Inc.
RE46C165/6/7/8
AC ELECTRICAL CHARACTERISTICS
AC Electrical Characteristics: Unless otherwise indicated, all parameters apply at TA = -25° to 75°, VDD = 9V,
Typical Application (unless otherwise noted), VSS = 0V.
Parameter
Symbol
Test
Pin
Min
Typ
Max
Units
Clocks
Conditions
Oscillator Time Base (COSC, ROSC)
Oscillator Period
Oscillator Tolerance
TPOSC
9
9.38
10.42
11.46
ms
1
Operating, Note 1
TTOLOSC
9
-10
0
10
%
1
Operating
9.4
10.4
11.5
ms
1
Operating
s
—
Remote alarm only
Standby, no alarm
LED Indication (LED)
TON1
11
TPLED0
11
TPLED1
11
38
43
47
s
4096
TPLED2
11
450
500
550
ms
48
TPLED3
11
9.6
10.7
11.7
s
1024
Timer mode, no local alarm
TPLED4
11
225
250
275
ms
24
Timer mode, no local alarm
Alarm Memory LED
Pulse Train (3x)
Off Time
TOFLED
11
1.2
1.3
1.5
s
127
Alarm memory set,
LED enabled
Alarm Memory LED
Timer Period
TLALED
11
21.5
23.9
26.3
LED On Time
LED Period
LED IS NOT ON
Local alarm condition
Hours 8257536 Alarm memory set
Detection (STROBE, IRED)
STROBE On Time
TSTON
4
9.4
10.4
11.5
ms
1
IRED On Time
TIRON
6
94
104
114
µs
0.01
Note 1:
2:
3:
4:
Smoke test,
Chamber test
Operating/DIAG, Note 1
TPOSC and TIRON are 100% production tested. All other timing is verified by functional testing.
See timing diagram for Horn Temporal Pattern in Figure 3-2.
See timing diagram for Horn Continuous Pattern in Figure 3-3.
During Timer mode, the LED Period is 10.5 seconds. The LED period will return to 43 seconds at the
conclusion of the Timer mode.
 2010 Microchip Technology Inc.
DS22251A-page 7
RE46C165/6/7/8
AC ELECTRICAL CHARACTERISTICS (CONTINUED)
AC Electrical Characteristics: Unless otherwise indicated, all parameters apply at TA = -25° to 75°, VDD = 9V,
Typical Application (unless otherwise noted), VSS = 0V.
Parameter
Smoke Test Period
IRED and STROBE
Symbol
Test
Pin
TPER0
TPER1
Min
Typ
Max
Units
Clocks
4, 6
9.6
10.7
11.7
s
1024
Standby, no alarm
4, 6
1.8
2.0
2.2
s
192
RE46C165/7 only
Standby, 1 valid smoke sample
4, 6
2.4
2.7
2.9
s
256
RE46C166/8 only
Standby, 1 valid smoke sample
4, 6
0.9
1.0
1.1
s
96
RE46C165/7 only
Standby, after 2 consecutive
valid smoke samples
4, 6
1.2
1.3
1.5
s
128
RE46C166/8 only
Standby, after 2 consecutive
valid smoke samples
4, 6
0.9
1.0
1.1
s
96
RE46C165/7 only
Local Alarm – (3 consecutive
valid smoke samples)
4, 6
1.2
1.3
1.5
s
128
RE46C166/8 only
Local Alarm – (3 consecutive
valid smoke samples)
TPER4
4, 6
300
333
367
ms
32
Push button test
TPER5
4, 6
7.2
8.0
8.8
s
768
RE46C165/7 only
In remote alarm
4, 6
9.6
10.7
11.7
s
1024
RE46C166/8 only
In remote alarm
4, 6
38
43
47
s
4096
Chamber test or low battery test,
no alarm
8, 9
450
500
550
ms
48
RE46C165/7 only
Local or remote alarm, Note 2
8, 9
225
250
275
ms
24
RE46C166/8 only
Local or remote alarm, Note 3
8, 9
450
500
550
ms
48
RE46C165/7 only
Local or remote alarm, Note 2
8, 9
75
83
92
ms
8
RE46C166/8 only
Local or remote alarm, Note 3
THOF2
8, 9
1.35
1.50
1.65
s
144
RE46C165/7 only
Local or remote alarm, Note 2
THPER1
8, 9
3.60
4.00
4.40
s
384
RE46C165/7 only
Local or remote alarm, Note 2
8, 9
0.30
0.33
0.37
s
32
RE46C166/8 only
Local or remote alarm, Note 3
8, 9
9.4
10.4
11.5
ms
1
Low battery or fail chamber test,
no alarm
TPER2
TPER3
TPER6
Conditions
Horn Operation (HORNB,HORNS,FEED)
Alarm On Time
Alarm Off Time
Alarm Period
Low Battery
or Chamber Fail
Horn On Time
Note 1:
2:
3:
4:
THON1
THOF1
THON2
TPOSC and TIRON are 100% production tested. All other timing is verified by functional testing.
See timing diagram for Horn Temporal Pattern in Figure 3-2.
See timing diagram for Horn Continuous Pattern in Figure 3-3.
During Timer mode, the LED Period is 10.5 seconds. The LED period will return to 43 seconds at the
conclusion of the Timer mode.
DS22251A-page 8
 2010 Microchip Technology Inc.
RE46C165/6/7/8
AC ELECTRICAL CHARACTERISTICS (CONTINUED)
AC Electrical Characteristics: Unless otherwise indicated, all parameters apply at TA = -25° to 75°, VDD = 9V,
Typical Application (unless otherwise noted), VSS = 0V.
Symbol
Test
Pin
Min
Typ
Max
Units
Clocks
Low Battery
Horn Off Time
THOF3
8, 9
38
43
47
s
4095
Low battery, no alarm
Low Battery
or Chamber Fail
Period
THPER2
8, 9
38
43
47
s
4096
Low battery, no alarm
Chamber Fail
Horn Off Time
THOF4
8, 9
291
323
355
ms
31
Failed chamber, no alarm
Chamber Fail
Pause Off Time
THOF5
8, 9
38
42
46
s
4031
Failed chamber, no alarm
Push-to-Test Alarm
Memory Off Time
THOF6
8, 9
216
240
264
ms
23
Alarm memory active,
push-to-test
Push-to-Test Alarm
Memory Period
THPER3
8, 9
225
250
275
ms
24
Alarm memory active,
push-to-test
Parameter
Conditions
Interconnect Signal Operation (I/O)
I/O Active Delay
TIODLY1
7
0.0
0.0
0.0
s
0
Local alarm start to I/O active
Remote Alarm Delay
TIODLY2
7
0.74
0.99
1.27
s
95
RE46C165/7 only
No local alarm,
I/O active to alarm
7
0.37
0.57
0.81
s
55
RE46C166/8 only
No local alarm,
I/O active to alarm
7
0.89
0.99
1.09
s
95
RE46C165/7 only
At conclusion of local alarm
or test
7
1.19
1.32
1.46
s
127
RE46C166/8 only
At conclusion of local alarm
or test
TIOFILT
7
—
—
0.30
s
32
Maximum I/O pulse width filtered
TTPER
—
8.1
9.0
9.9
Min
51712
RE46C165/6 only
No alarm condition
—
1.1
1.2
1.4
Min
7232
RE46C167/8 only
No alarm condition
I/O Charge
Dump Duration
I/O Filter
TIODMP
Hush Timer Operation
Hush Timer Period
Note 1:
2:
3:
4:
TPOSC and TIRON are 100% production tested. All other timing is verified by functional testing.
See timing diagram for Horn Temporal Pattern in Figure 3-2.
See timing diagram for Horn Continuous Pattern in Figure 3-3.
During Timer mode, the LED Period is 10.5 seconds. The LED period will return to 43 seconds at the
conclusion of the Timer mode.
 2010 Microchip Technology Inc.
DS22251A-page 9
RE46C165/6/7/8
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, VDD = 9V, Typical Application (unless otherwise noted),
VSS = 0V
Parameters
Sym
Min
Typ
Max
Units
Specified Temperature Range
TA
-25
—
+75
°C
Operating Temperature Range
TA
-25
—
+75
°C
TSTG
-55
—
+125
°C
Thermal Resistance, 16L-PDIP
θJA
—
70
—
°C/W
Thermal Resistance, 16L-SOIC (150 mil)
θJA
—
86.1
—
°C/W
Thermal Resistance, 16L-SOIC (300 mil)
θJA
—
80
—
°C/W
Conditions
Temperature Ranges
Storage Temperature Range
Thermal Package Resistances
DS22251A-page 10
 2010 Microchip Technology Inc.
RE46C165/6/7/8
2.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1:
PIN FUNCTION TABLE
RE46C165/6/7/8
PDIP, SOIC
Symbol
1
C1
High Gain Capacitor Pin
2
C2
Normal Gain Capacitor Pin
2.1
Function
3
DETECT
Photo Diode Input
4
STROBE
Strobed Detection Negative Supply
5
VDD
Positive Power Supply
6
IRED
Infrared Emitting Diode Pin
7
IO
Interconnect Pin
8
HB
Horn Brass, Inverted Output
9
HS
Horn Silver Output
10
FEED
Horn Feedback Pin
11
LED
12
COSC
LED Driver Pin
13
ROSC
14
VSS
15
VSEN
Hush Timer Sensitivity Pin
16
TEST
Test Pin
Oscillator Capacitor Input
Oscillator Resistor Drive Low
Negative Power Supply
High/Normal Gain Capacitor Pins
(C1, C2)
The capacitor connected to the C1 pin sets the photo
amplifier gain (high) for the push-to-test and chamber
sensitivity test. The size of this capacitor will depend on
the chamber background reflections. A = 1 + (C1/10),
where C1 is expressed in pF. The gain should be
<10000.
The capacitor connected to the C2 pin sets the photo
amplifier gain (normal) during standby. The value of this
capacitor will depend on the smoke sensitivity required.
A = 1 + (C2/10), where C2 is expressed in pF.
2.2
Positive Power Supply (VDD)
The VDD pin is the device’s positive power supply input.
2.5
Infrared Emitting Diode Pin (IRED)
Provides a regulated pulsed output voltage pre-driver
for the infrared emitter. This output usually drives the
base of an NPN transistor.
2.6
Interconnect Pin (I/O)
This bidirectional pin provides the capability to
interconnect many detectors in a single system. This
pin has an internal pull-down device.
Photo Diode Input (DETECT)
This input is normally connected to the cathode of an
external photo diode operated at zero bias.
2.3
2.4
Strobed Detection
Negative Supply (STROBE)
Regulated output voltage of VDD – 5, which is active
during a test for smoke. This output is the negative side
of the photo amplifier reference circuitry.
 2010 Microchip Technology Inc.
2.7
Horn Brass, Inverted Output (HB)
The HB pin is connected to the metal electrode of a
piezoelectric transducer.
2.8
Horn Silver Output Pin (HS)
The HS pin is a complementary output to HB and
connects to the ceramic electrode of the piezoelectric
transducer.
DS22251A-page 11
RE46C165/6/7/8
2.9
Horn Feedback Pin (FEED)
Usually this pin is connected to the feedback electrode
through a current limiting resistor. If not used, this pin
must be connected to VDD or VSS.
When the horn is enabled, FEED drives the buffered
output HS pin and the complementary output HB pin.
2.10
LED Driver Pin (LED)
This pin is an open drain NMOS output used to drive a
visible LED.
2.11
Oscillator Capacitor Input (COSC)
A capacitor connected to this pin, with a parallel
resistor, sets the internal clock low time, which is
approximately the clock period.
2.12
Oscillator Resistor Drive Low
(ROSC)
A resistor between this pin and COSC pin sets the
internal clock high time. This also sets the IRED pulse
width.
2.13
Hush Timer Sensitivity Pin (VSEN)
In Timer mode, this input pin can be used to set an
external smoke comparator reference.
2.14
TEST Pin
This input is used to invoke two test modes and the
Timer mode. This input has an internal pull-down.
DS22251A-page 12
 2010 Microchip Technology Inc.
RE46C165/6/7/8
3.0
DEVICE DESCRIPTION
3.1
Internal Timing
With the external components specified in the Typical
Application for ROSC and COSC, the internal
oscillator has a nominal period of 10 ms. Normally the
analog circuitry is powered down to minimize standby
current (typically 4 µA at 9V). Once every 10 seconds
the detection circuitry (normal gain) is powered up
for 10 ms. Prior to completion of the 10 ms period, the
IRED pulse is active for 100 µs. At the conclusion of the
10 ms period, the photo amplifier is compared to an
internal reference to determine the chamber status and
latched. If a smoke condition is present, the period to
the next detection decreases and additional checks are
made. Three consecutive smoke detections will cause
the device to go into alarm, and the horn circuit and
interconnect will be active.
Once every 43 seconds, the status of the battery
voltage is checked. This status is checked and latched
at the conclusion of the LED pulse. In addition, once
every 43 seconds, the chamber is activated and, using
the high gain mode (capacitor C1), a check of the
chamber is made by amplifying background reflections.
If either the low battery or the photo chamber test fails,
the horn will chirp for 10 ms every 43 seconds.
The oscillator period is determined by the values of R9,
R12 and C5 (see the Typical Application figure). The
oscillator period is as follows:
EQUATION 3-1:
T = TR + TF
Where:
TR = .693 * R12 * C5
TF = .693 * R9 * C5
3.2
Smoke Detection Circuit
After the required three consecutive detections, the
device will go into a local alarm condition. When the
TEST input is deactivated (VIL4) and after one clock
cycle, the normal gain capacitor C2 is selected. The
detection rate continues once every 330 ms for the
RE46C166/8, and every 250 ms while the horn is not
sounding for the RE46C165/7. When three
consecutive no smoke conditions are detected, the
device returns to standby timing.
Push-to-test will not work while the alarm memory is
set. The alarm memory notification will be activated
instead.
3.4
LED Pulse
In standby, the LED is pulsed on for 10 ms, every
43 seconds. In a local alarm condition or the push-totest alarm, the LED pulse frequency is increased once
every.5 seconds. In the case of a remote alarm, the
LED is not active. In the Timer mode of operation, the
LED is pulsed on for 10 ms every 10 seconds.
3.5
Interconnect
The bidirectional I/O pin allows the interconnection of
multiple detectors. In a local alarm condition, this pin is
driven high immediately through a constant current
source. Shorting this output to ground will not cause
excessive current. The I/O is ignored as an input during
a local alarm.
The I/O pin has a 280k nominal pull-down resistor, so
the pin may be left unconnected.
The I/O pin also has an NMOS discharge device that is
active for 1 second after the conclusion of any type of
local alarm. This device helps to quickly discharge any
capacitance associated with the interconnect line.
If a remote active high signal is detected, the device
goes into remote alarm and the horn will be active.
Internal protection circuitry allows for the signaling unit
to have a higher supply voltage than the signaled unit,
without excessive current draw.
A comparator compares the photo amplifier output to
an internal reference voltage. If the required number of
consecutive smoke conditions is met, the device will go
into local alarm and the horn will be active. In local
alarm, the C2 gain is internally increased by
approximately 10% to provide alarm hysteresis.
The interconnect input has a digital filter that ensures
filtering out pulses of up to 300 ms. Filter pulses will be
ignored and not affect internal timing of the part. This
allows for interconnection to other types of alarms
(carbon monoxide for example) that may have a pulsed
interconnect signal.
3.3
The remote alarm delay (370 ms to 1.27s) specifies the
time from the interconnect going active to sounding the
piezo horn alarm.
Push-to-Test Operation
If the TEST input pin is activated (VIH4), the smoke
detection is sampled at a high rate. The RE46C166/8
device samples at a period of 330 ms. The
RE46C165/7 device has a first sample delay of up to
330 ms. After one sample, the smoke detection rate
increases to once every 250 ms. In this mode the high
gain capacitor C1 is selected, and background
reflections are used to simulate a smoke condition.
 2010 Microchip Technology Inc.
DS22251A-page 13
RE46C165/6/7/8
3.6
Low Battery Detection
In standby, an internal reference is compared to the
voltage divided VDD supply. A low battery status is
latched at the conclusion of the LED pulse. The horn
will chirp once for 10 ms every 43 seconds, until the
low battery condition no longer exists. The low battery
chirp occurs next to the LED pulse.
The low battery notification does not sound in a local or
remote alarm condition.
3.7
Chamber Fail Detection
In standby, a chamber test is also performed every
43 seconds, by switching to the high gain capacitor C1
and sensing the photo chamber background
reflections. Two consecutive chamber test failures will
cause the horn to chirp 3 times for 10 ms spaced
323 ms apart. This will repeat every 42 seconds, as
long as a chamber test fail exists. The failed chamber
test chirps occur ~21 seconds after the LED pulse in
Standby mode (not hush).
The chamber fail notification does not sound in a local
or remote alarm condition.
3.8
Timer Mode
If resistors RADJ1 and RADJ2 (see Typical Application
figure) are in place and a high-to-low transition occurs
on the TEST input, the device enters a timer mode
(10 minutes maximum for RE46C165/6 devices,
1 minute maximum for RE46C167/8). In this mode, the
smoke comparator reference is switched from the
internal VDD – 3.5V reference to the voltage that
appears on VSEN. This allows the sensitivity to be
modified for the duration of the timer period. High gain
operations (push-to-test and chamber test) always use
the internal VDD – 3.5V reference. The chamber test is
performed in Timer mode.
3.9
Alarm Memory
If a detector has entered a local alarm, when exiting
that local alarm, the alarm memory latch is set. Initially
the LED can be used to visually identify any unit that
had previously been in a local alarm condition. The
LED will flash 3 times spaced 1.3 seconds apart. This
pattern will repeat every 43 seconds. The duration of
the flash is 10 ms. In order to conserve battery power,
this visual indication will stop after a period of 24 hours.
The user will always be able to identify a unit with an
active alarm memory by pressing the push-to-test
button. When this button is active, the horn will chirp
and the LED will pulse on for 10 ms every 250 ms. The
push-to-test alarm will not activate until the alarm
memory is reset.
If the alarm memory condition is set, any time the pushto-test button is pressed and then released, the alarm
memory latch is reset.
The initial 24 hour visual indication is not displayed if a
low battery condition exits.
3.10
Diagnostic Mode
In addition to the normal function of the TEST input, a
special diagnostic mode is available to calibrate and
test the smoke detector. Taking the TEST pin below
VSS and sourcing ~200 µA out of the pin for 1 clock
cycle will enable the diagnostic mode. In the diagnostic
mode, some of the pin functions are redefined. Refer to
Table 3-1 below for redefined pin functions in the
diagnostic mode. In addition, in this mode STROBE is
always enabled, and the IRED is pulsed at the clock
rate of 10 ms nominal.
If VSEN is left unconnected or tied to VSS, the Hush
Timer mode operation is inhibited.
If the smoke level causes the reduced sensitivity set
point to be exceeded during this timer period, the unit
will go into a local alarm condition, the horn will sound,
and the Timer mode is cancelled. If an external only
alarm occurs during the Timer mode, the Timer mode
is cancelled.
If the test button is pushed in a standby, reduced
sensitivity mode, the unit is tested normally. Upon
release of the test button, the 10 minute maximum
timer mode counter is reset and restarted.
DS22251A-page 14
 2010 Microchip Technology Inc.
RE46C165/6/7/8
TABLE 3-1:
DIAGNOSTIC MODE PIN FUNCTION
Pin Name
Pin
Number
I/O
7
Disabled as an output. A high on this pin directs the photo amplifier output to pin C1 or
C2, determined by the level on VSEN. Amplification occurs during the IRED active time.
VSEN
15
If I/O is high, then this pin controls the gain capacitor that is used. If VSEN is low, the
normal gain is selected and the photo amplifier output appears on C1. If VSEN is high,
high gain is selected, and the photo amplifier output is on C2.
FEED
10
If VSEN is low, then taking this input high will enable hysteresis, which is a nominal
10% gain increase in normal gain mode.
Function
COSC
12
If desired, this pin can be driven by an external clock.
HORNB
8
This pin becomes the smoke integrator output. A high level indicates that an alarm condition has been detected.
LED
11
The LED pin is used as a low battery indicator. For VDD above the low battery threshold, the open drain NMOS is off. If VDD falls below the threshold, the NMOS turns on.
Standby, No Alarm (not to Scale)
Oscillator
TPOSC
TIRON
Internal Clock
TST ON
TPER0
STROBE
TIRON
IRED
TPLED1
LED
Low Supply Test Failure
LED
STROBE
Low Bat t ery Test
THON2
Low Batt eryTest
THOF3
Low Batt eryWarning Chirp
Horn
THPER2
TPER6
Chamber Fail Test Failure
STROBE
Chamber Fail Test
THON2
THOF4
THOF5
Horn
THPER2
Chamber Test and Warning is Offset from Low Battery Test and Warning by 21.3 Seconds.
FIGURE 3-1:
RE46C165/6/7/8 Timing Diagram – Standby, Low Battery, Chamber Fail.
 2010 Microchip Technology Inc.
DS22251A-page 15
RE46C165/6/7/8
Local Alarm Timing
TPER1
TPER2
TPER3
STROBE
IRED
TPLED2
TPLED2
LED
Push To Test Alarm Timing
TEST
T PER4
TPER4
STROBE
IRED
No Alarm
Local Alarm
Horn Patterns
TIODLY2
T HON1
THOF1
No Alarm
T HOF2
Temporal Horn
Continuous Horn
TIODLY2
THON1
THOF1
Interconnect Timing
TIODMP
TIODLY1
IO as output
IO as input
TIOFILT
TPER5
STROBE
No Alarm
Remote/External Alarm
No Alarm
Notes:
1. Smoke is not sampled when the horn is active.
2. Low battery warning chirp is suppressed in local or remote alarm
3. IO Dump active only in local alarm, inactive if external alarm
FIGURE 3-2:
DS22251A-page 16
RE46C165/6/7/8 Timing Diagram – Local and Remote Alarm.
 2010 Microchip Technology Inc.
RE46C165/6/7/8
TEST
TPLED3
LED
Output High Z
STROBE
TTPER
FIGURE 3-3:
RE46C165/6/7/8 Timing Diagram – Timer Mode.
Alarm Memory
Alarm, No Low Battery
Alarm Memory; No Alarm; No Low Battery
Alarm Memory After 24 Hour Timer
Indication
TPLED1
TPLED4
Standby
LED
TPLED2
TON1
TOFLED
TPLED1
TPLED1
THON2
TLALED
HB
THPER3
THOF6
TEST
FIGURE 3-4:
RE46C165/7 Timer Diagram – Alarm Memory Mode.
Alarm Memory
Alarm, No Low Battery
Alarm Memory; No Alarm; No Low Battery
Alarm Memory After 24 Hour Timer
Indication
TPLED1
TPLED4
Standby
LED
TPLED2
TON1
TOFLED
TPLED1
TPLED1
THON2
TLALED
HB
THPER3
THOF6
TEST
FIGURE 3-5:
RE46C166/8 Timer Diagram – Alarm Memory Mode.
 2010 Microchip Technology Inc.
DS22251A-page 17
RE46C165/6/7/8
NOTES:
DS22251A-page 18
 2010 Microchip Technology Inc.
RE46C165/6/7/8
4.0
PACKAGING INFORMATION
4.1
Package Marking Information
16-Lead PDIP
Example
XXXXXXXXXXXXXX
XXXXXXXXXXXXXX
YYWWNNN
16-Lead SOIC (150 mil.)
e3
RE46C165-V/P^^
1007256
Example
RE46C165
V/SL e3
1007256
XXXXXXXXXXXXX
XXXXXXXXXXXXX
YYWWNNN
16-Lead SOIC (300 mil.)
XXXXXXXXXXX
XXXXXXXXXXX
XXXXXXXXXXX
YYWWNNN
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Example
RE46C165
V/SO e3
1007256
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
 2010 Microchip Technology Inc.
DS22251A-page 19
RE46C165/6/7/8
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 2010 Microchip Technology Inc.
RE46C165/6/7/8
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 2010 Microchip Technology Inc.
DS22251A-page 21
RE46C165/6/7/8
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS22251A-page 22
 2010 Microchip Technology Inc.
RE46C165/6/7/8
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 2010 Microchip Technology Inc.
DS22251A-page 23
RE46C165/6/7/8
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DS22251A-page 24
 2010 Microchip Technology Inc.
RE46C165/6/7/8
APPENDIX A:
REVISION HISTORY
Revision A (May 2010)
• Original Release of this Document.
 2010 Microchip Technology Inc.
DS22251A-page 25
RE46C165/6/7/8
NOTES:
DS22251A-page 26
 2010 Microchip Technology Inc.
RE46C165/6/7/8
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
XX
/X
Device Package Number
of Pins
Device
Package
RE46C165:
RE46C165T:
CMOS Photoelectric Smoke Detector ASIC
CMOS Photoelectric Smoke Detector ASIC
(Tape and Reel, SOIC only)
RE46C165/7: CMOS Photoelectric Smoke Detector ASIC
RE46C165/7T: CMOS Photoelectric Smoke Detector ASIC
(Tape and Reel, SOIC only)
RE46C166/8: CMOS Photoelectric Smoke Detector ASIC
RE46C166/8T: CMOS Photoelectric Smoke Detector ASIC
(Tape and Reel, SOIC only)
RE46C165/6: CMOS Photoelectric Smoke Detector ASIC
RE46C165/6T: CMOS Photoelectric Smoke Detector ASIC
(Tape and Reel, SOIC only)
E
S
=
=
SW
=
Plastic Dual In-Line, 300 mil. Body, 16-Lead (PDIP)
Small Plastic Outline - Narrow, 3.90 mm Body,
16-Lead (SOIC)
Small Plastic Outline - Wide, 7.50 mm Body,
16-Lead (SOIC)
 2010 Microchip Technology Inc.
Examples:
a)
b)
c)
RE46C165E16F:
RE46C165S16F:
RE46C165S16TF:
d)
e)
RE46C165SW16F:
RE46C165SW16TF:
a)
b)
c)
RE46C166E16F:
RE46C166S16F:
RE46C166S16TF:
d)
e)
RE46C166SW16F:
RE46C166SW16TF:
a)
b)
c)
RE46C167E16F:
RE46C167S16F:
RE46C167S16TF:
d)
e)
RE46C167SW16F:
RE46C167SW16TF:
a)
b)
c)
RE46C168E16F:
RE46C168S16F:
RE46C168S16TF:
d)
e)
RE46C168SW16F:
RE46C168SW16TF:
16LD PDIP Package
16LD SOIC Package
16LD SOIC Package,
Tape and Reel
16LD SOIC Package
16LD SOIC Package,
Tape and Reel
16LD PDIP Package
16LD SOIC Package
16LD SOIC Package,
Tape and Reel
16LD SOIC Package
16LD SOIC Package,
Tape and Reel
16LD PDIP Package
16LD SOIC Package
16LD SOIC Package,
Tape and Reel
16LD SOIC Package
16LD SOIC Package,
Tape and Reel
16LD PDIP Package
16LD SOIC Package
16LD SOIC Package,
Tape and Reel
16LD SOIC Package
16LD SOIC Package,
Tape and Reel
DS22251A-page 27
RE46C165/6/7/8
NOTES:
DS22251A-page 28
 2010 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART,
PIC32 logo, rfPIC and UNI/O are registered trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MXDEV, MXLAB, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip
Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified
logo, MPLIB, MPLINK, mTouch, Octopus, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, Total Endurance,
TSHARC, UniWinDriver, WiperLock and ZENA are
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2010, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-60932-170-3
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
 2010 Microchip Technology Inc.
DS22251A-page 29
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://support.microchip.com
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
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Tel: 852-2401-1200
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Tel: 91-11-4160-8631
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Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
China - Beijing
Tel: 86-10-8528-2100
Fax: 86-10-8528-2104
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
China - Hong Kong SAR
Tel: 852-2401-1200
Fax: 852-2401-3431
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Taiwan - Hsin Chu
Tel: 886-3-6578-300
Fax: 886-3-6578-370
China - Shenzhen
Tel: 86-755-8203-2660
Fax: 86-755-8203-1760
Taiwan - Kaohsiung
Tel: 886-7-536-4818
Fax: 886-7-536-4803
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Taipei
Tel: 886-2-2500-6610
Fax: 886-2-2508-0102
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
01/05/10
DS22251A-page 30
 2010 Microchip Technology Inc.