RH27C Precision Operational Amplifier W W U W U DESCRIPTIO ABSOLUTE The RH27C combines very low noise with excellent precision and high speed specifications. The low 1/f noise corner frequency of 2.7Hz combined with 3.5nV√Hz 10Hz noise and low offset voltage make the RH27C an excellent choice for low frequency military instrumentation applications. The wafer lots are processed to LTC’s in-house Class S flow to yield circuits usable in stringent military applications. Supply Voltage ..................................................... ±22V Internal Power Dissipation ................................ 500mW Input Voltage ........................... Equal to Supply Voltage Output Short-Circuit Duration ......................... Indefinite Differential Input Current (Note 8) ..................... ±25mA Operating Temperature Range ............. – 55°C to 125°C Junction Temperature Range ............... – 55°C to 150°C Storage Temperature Range ................ – 65°C to 150°C Lead Temperature (Soldering, 10 sec)................. 300°C , LTC and LT are registered trademarks of Linear Technology Corporation. W U U U BUR -I CIRCUIT RATI GS U For complete electrical specifications and performance curves see the OP-27/OP-37 data sheet. AXI U PACKAGE/ORDER I FOR ATIO TOP VIEW VOS TRIM 10k 20V – 7 6 3 + –20V 3 +IN 8 5 3 OUT +IN 3 NC V – – (CASE) + 4 8 VOS TRIM 7 V+ 6 OUT 5 NC J8 PACKAGE 8-LEAD CERDIP H PACKAGE 8-LEAD TO-5 METAL CAN 4 – 4 V + VOS TRIM 1 –IN 2 6 + 7 OR 4 10k – V+ – –IN 2 2 200Ω 7 VOS TRIM 1 20V 2 TOP VIEW 8 TOP VIEW –20V NC 1 10 NC VOS TRIM 2 – 9 VOS TRIM –IN 3 + 8 V+ +IN 4 7 OUT V– 5 6 NC W PACKAGE 10-LEAD CERPAC TABLE 1: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS NOTES MIN (Preirradiation) (Note 9) TA = 25°C TYP MAX 100 SUBGROUP 4 – 55°C ≤ TA ≤ 125°C MIN TYP MAX 300 SUBGROUP 2, 3 UNITS µV VOS Input Offset Voltage 1 ∆VOS ∆Temp Average Offset Drift 4, 7 ∆VOS ∆Time Long-Term Input Offset Voltage Stability 2, 4 IOS Input Offset Current 75 1 135 2, 3 nA IB Input Bias Current ±80 1 ±150 2, 3 nA µV/°C 1.8 µV/Month 2 1 RH27C TABLE 1: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER en in MIN TA = 25°C TYP MAX AVOL SUBGROUP NOTES Input Noise Voltage 0.1Hz to 10Hz 4, 5 0.25 µVP-P Input Noise Voltage Density fO = 10Hz fO = 30Hz fO = 1000Hz 3 4 4 8.0 5.6 4.5 nV/√Hz nV/√Hz nV/√Hz Input Noise Current Density fO = 1000Hz 4, 6 0.6 pV/√Hz 4 VCM = ±11V VCM = ±10V 100 Power Supply Rejection Ratio VS = ±4V to ±18V VS = ±4.5V to ±18V 94 Large-Signal Voltage Gain RL ≥ 2k, VO = ±10V RL ≥ 600Ω, VO = ±1V VS = ±4V VOUT Maximum Output Voltage Swing SR Slew Rate RL = 2k GBW Gain-Bandwidth Product fO = 100kHz ZO Open-Loop Output Resistance VO = 0, IO = 0 PD Power Dissipation 4 RL = 2k RL = 600Ω 4 GΩ ±11 Common Mode Rejection Ratio V 94 2, 3 dB dB 86 2, 3 dB dB 1 700 200 4 300 5, 6 V/mV V/mV ±11.5 ±10.0 4 4 ±10.5 5, 6 V V 1.7 7 V/µs 5 MHz Ω 70 170 CONDITIONS ±10.2 1 TABLE 1A: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER UNITS 2 Input Voltage Range PSRR – 55°C ≤ TA ≤ 125°C MIN TYP MAX SUBGROUP CONDITIONS Input Resistance Common Mode CMRR (Preirradiation) (Note 9) NOTES 1 mW (Postirradiation) (Note 10) 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS VOS Input Offset Voltage 100 130 180 280 400 µV IOS Input Offset Current 75 75 90 120 180 nA IB Input Bias Current ±80 ±80 ±125 ±200 ±400 nA 1 Input Resistance Common Mode 2 (Typ) 2 (Typ) 2 (Typ) 2 (Typ) 2 (Typ) GΩ ±11 ±11 ±11 ±11 ±11 V CMRR Common Mode Rejection Ratio VCM = ±11V 100 100 97 94 90 dB PSRR Power Supply Rejection Ratio VS = ±4V to ±18V 94 94 92 90 86 dB AVOL Large-Signal Voltage Gain RL ≥ 2k, VO = ±10V V/mV VOUT Maximum Output Voltage Swing RL ≥ 10k RL ≥ 600Ω ZO Open-Loop Output Resistance VO = 0, IO = 0 PD Power Dissipation Input Voltage Range 2 4 700 700 700 700 400 ±11.5 ±10.0 ±11.5 ±10.0 ±11.5 ±10.0 ±11.5 ±10.0 ±11.5 ±10.0 V V 70 (Typ) 70 (Typ) 70 (Typ) 70 (Typ) 70 (Typ) Ω 170 170 170 170 170 mW RH27C TABLE 1A: ELECTRICAL CHARACTERISTICS Note 1: Input offset voltage measurements are performed by automatic test equipment approximately 0.5 seconds after application of power. Note 2: Long-term input offset voltage stability refers to the averaged trend line of offset voltage vs time over extended periods after the first 30 days of operation. Excluding the initial hour of operation, changes in VOS during the first 30 days are typically 2.5µV. Refer to the typical performance curve. Note 3: Sample tested to an LTPD of 15 on every lot. Contact factory for 100% testing of 10Hz voltage density noise. Note 4: Parameter is guaranteed by design, characterization, or correlation to other tested parameters. Note 5: See test circuit and frequency response curve for 0.1Hz to 10Hz tester on OP-27/OP-37 data sheet. Note 6: See test circuit for current noise measurement on OP-27/OP-37 data sheet. Note 7: The average input offset drift performance is within the specifications unnulled or when nulled with a pot having a range 8kΩ to 20kΩ. Note 8: The RH27C’s inputs are protected by back-to-back diodes. Current limiting resistors are not used in order to achieve low noise. If differential input voltage exceeds ±0.7V, the input current should be limited to 25mA. Note 9: VS = ±15V, VCM = 0V unless otherwise noted. Note 10: TA = 25°C, VS = ±15V, VCM = 0V, unless otherwise noted. TOTAL DOSE BIAS CIRCUIT 10k 15V –1µF – 10k 8V + –15V –1µF W U TYPICAL PERFOR A CE CHARACTERISTICS Negative Slew Rate Positive Slew Rate 4 4 VS = 15V RL = 2k NEGATIVE SLEW RATE (V/µs) POSITIVE SLEW RATE (V/µs) VS = 15V RL = 2k 3 2 1 0 3 2 1 0 1 10 100 TOTAL DOSE KRAD (Si) 1000 1 10 100 TOTAL DOSE KRAD (Si) RH27C • TPC01 Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 1000 RH27C • TPC02 3 RH27C W U TYPICAL PERFOR A CE CHARACTERISTICS Input Offset Voltage VS = ±15V VCM = 0V 50 0 –50 –100 350 VS = ±15V RL = 2k VOUT = ±10V 160 OPEN-LOOP GAIN (dB) INPUT OFFSET VOLTAGE (µV) 100 Input Bias Current Open-Loop Gain 170 150 140 130 120 1 10 10 INPUT OFFSET CURRENT (nA) COMMON MODE REJECTION RATIO (dB) 150 140 130 120 100 Power Supply Rejection Ratio VS = ±15V VCM = 0V 50 25 0 –25 –50 1000 100 TOTAL DOSE KRAD (Si) 100 10 TOTAL DOSE KRAD (Si) 1 RH27C • TPC06 1000 140 110 10 10 100 TOTAL DOSE KRAD (Si) RH27C • TPC05 Input Offset Current 75 VS = ±15V VCM = ±11V 1 1 POWER SUPPLY REJECTION RATIO (dB) Common Mode Rejection Ratio 160 100 RH27C • TPC04 RH27C • TPC03 170 150 1000 100 TOTAL DOSE KRAD (Si) 1 1000 100 TOTAL DOSE KRAD (Si) 200 0 100 –200 250 50 110 –150 VS = ±15V VCM = 0V 300 INPUT BIAS CURRENT (nA) 150 1000 RH27C • TPC07 VS = ±4V TO ±18V 130 120 110 100 90 80 70 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH27C • TPC08 U W TABLE 2: ELECTRICAL TEST REQUIRE E TS MIL-STD-883 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements (Method 5004) 1*,2,3,4,5,6,7 Group A Test Requirements (Method 5005) 1,2,3,4,5,6,7 Group B and D for Class S, and Group C and D for Class B End Point Electrical Parameters (Method 5005) 1 * PDA applies to subgroup 1. See PDA Test Notes. PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883 Class B. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burnin in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. I.D. No. 66-10-0155 Rev. C 0398 4 Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 FAX: (408) 434-0507● TELEX: 499-3977 ● www.linear-tech.com rh27cc LT/HP 0398 100 REV C • PRINTED IN USA ● LINEAR TECHNOLOGY CORPORATION 1993