Preliminary Datasheet RJK60S7DPP-E0 600V -30A - SJ MOS FET High Speed Power Switching R07DS0643EJ0100 Rev.1.00 Apr 23, 2012 Features Superjunction MOSFET Low on-resistance RDS(on) = 0.100 typ. (at ID = 15 A, VGS = 10 V, Ta = 25C) High speed switching tf = 15 ns typ. (at ID = 15 A, VGS = 10 V, RL = 20 , Rg = 10 , Ta = 25C) Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) D 1. Gate 2. Drain 3. Source G 1 S 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Tc = 25C Tc = 100C Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID Note1 ID Note1 ID (pulse)Note1 IDR Note1 IDR (pulse) Note1 IAPNote3 Note3 EAR Pch Note2 ch-c Tch Tstg Ratings 600 +30, 20 30 19 60 30 60 7.5 Unit V V A A A A A A 3.05 34.7 3.6 150 –55 to +150 mJ W C/W C C Notes: 1. Limited by Tch max. 2. Value at Tc = 25C 3. STch = 25C, Tch 150C R07DS0643EJ0100Rev.1.00 Apr 23, 2012 Page 1 of 6 RJK60S7DPP-E0 Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage RDS(on) Min 600 — — 3 — — Typ — — — — 0.100 0.25 Max — 1 ±0.1 5 0.125 — Unit V mA A V Rg — 1.7 — f = 1 MHz VDS = 25 V, VGS = 0 Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Ciss Coss Crss td(on) tr td(off) tf Qg Qgs — — — — — — — — — 2300 3000 10 27 28 55 9 39 15 — — — — — — — — — pF pF pF ns ns ns ns nC nC VDS = 25 V VGS = 0 f = 100 kHz Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Qgd VDF trr 11 1.0 490 26 — 1.6 — — nC V ns A 7.1 — C Static drain to source on state resistance Gate resistance Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Body-drain diode reverse recovery current Irr — — — — Body-drain diode reverse recovery charge Qrr — Notes: 4 Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = +30V, 20 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 15 A, VGS = 10 V Note4 Ta = 150°C Note4 ID = 15 A, VGS = 10 V ID = 15 A VGS = 10 V RL = 20 Note4 Rg = 10 VDD = 480 V VGS = 10 V Note4 ID = 30 A IF = 30 A, VGS = 0 Note4 IF = 30 A VGS = 0 Note4 diF/dt = 100 A/s Pulse test R07DS0643EJ0100Rev.1.00 Apr 23, 2012 Page 2 of 6 RJK60S7DPP-E0 Preliminary Main Characteristics Channel Dissipation vs. Case Temperature Typical Output Characteristics 60 40 Drain Current ID (A) Channel Dissipation Pch (W) 50 30 20 10 Ta = 25°C Pulse Test 50 7V 8V 10 V 15 V 40 6.5 V 30 6V 20 VGS = 5.5 V 10 0 0 0 25 50 75 2 0 100 125 150 175 4 5 10 8 Drain to Source Voltage VDS (V) Case Temperature Tc (°C) Typical Output Characteristics VDS = 10 V Pulse Test 6.5 V 15 V 6V 20 5.5 V 10 VGS = 5 V Drain Current ID (A) 8V 7V 10 V 30 10 Tc = 75°C 1 25°C −25°C 0.1 0.01 0 0 Drain to Source on State Resistance RDS(on) (Ω) 100 Ta = 125°C Pulse Test 2 4 5 8 0 10 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current (Typical) Static Drain to Source on State Resistance vs. Temperature (Typical) 1 Ta = 125°C 25°C 0.1 VGS = 10 V Pulse Test 0.01 1 10 Drain Current ID (A) R07DS0643EJ0100Rev.1.00 Apr 23, 2012 100 Static Drain to Source on State Resistance RDS(on) (Ω) Drain Current ID (A) 40 0.4 VGS = 10 V Pulse Test 0.3 ID = 30 A 0.2 15 A 0.1 0 −25 0 25 50 75 10 A 100 125 150 Case Temperature Tc (°C) Page 3 of 6 RJK60S7DPP-E0 Preliminary Typical Capacitance vs. Drain to Source Voltage 100000 1000 VGS = 0 f = 100 kHz 10000 Capacitance C (pF) 100 Ciss 1000 Coss 100 10 Crss 1 di/dt = 100 A/μs VGS = 0, Ta = 25°C 0.1 10 10 0 100 Reverse Drain Current IDR (A) VDS (V) Drain to Source Voltage 4 3 2 1 0 150 200 Drain to Source Voltage 250 300 Reverse Drain Current vs. Source to Drain Voltage (Typical) 100 Ta = 125°C 25°C 10 1 VGS = 0 Pulse Test 0.1 0 0.4 0.8 1.2 1.6 Source to Drain Voltage VSD (V) R07DS0643EJ0100Rev.1.00 Apr 23, 2012 800 200 250 300 VDS (V) 16 ID = 30 A Ta = 25°C VGS 600 12 VDD = 480 V 300 V 100 V VDS 400 200 0 0 VDS (V) 8 4 VDD = 480 V 300 V 100 V 20 0 40 Gate Charge Gate to Source Cutoff Voltage VGS(off) (V) EOSS (μJ) 5 100 150 Dynamic Input Characteristics (Typical) 6 50 100 Drain to Source Voltage COSS Stored Energy (Typical) 0 50 60 VGS (V) 1 Reverse Drain Current IDR (A) Ta = 25°C Gate to Source Voltage Reverse Recovery Time trr (ns) Body-Drain Diode Reverse Recovery Time (Typical) 80 Qg (nC) Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 6 5 ID = 10 mA 4 3 1 mA 0.1 mA 2 1 VDS = 10 V 0 −25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) Page 4 of 6 RJK60S7DPP-E0 Preliminary Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) Drain to Source Breakdown Voltage V(BR)DSS (V) Drain to Source Breakdown Voltage vs. Case Temperature (Typical) 800 700 600 500 ID = 10 mA VGS = 0 400 −25 0 25 50 75 100 125 150 Case Temperature 4 VDD = 50 V Rg ≥ 100 Ω 3 2 1 0 25 50 75 100 Channel Temperature Tc (°C) Switching Time Test Circuit 125 Tch (°C) Waveform Vout Monitor Vin Monitor 150 90% D.U.T. RL Vin 10 Ω 10% 10% Vout 10% VDD = 300 V Vin 10 V 90% td(on) tr Avalanche Test Circuit VDS Monitor 90% tf td(off) Avalanche Waveform EAR = L 1 2 L • IAP2 • VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg D. U. T VDS VDD ID 100 Ω Vin 0 R07DS0643EJ0100Rev.1.00 Apr 23, 2012 VDD Page 5 of 6 RJK60S7DPP-E0 Preliminary Package Dimension Package Name TO-220FP JEITA Package Code RENESAS Code PRSS0003AG-A Previous Code MASS[Typ.] 1.9g 10.16 ± 0.20 2.54 ± 0.20 6.68 ± 0.20 3.3 ± 0.2 1.28 ± 0.30 3.18 ± 0.20 15.87 ± 0.20 3.18 ± 0.10 12.98 ± 0.30 Unit: mm Max 1.47 2.76 ± 0.20 0.80 ± 0.20 0.50 4.7 ± 0.2 5.08 ± 0.20 Ordering Information Orderable Part Number RJK60S7DPP-E0#T2 R07DS0643EJ0100Rev.1.00 Apr 23, 2012 Quantity 1000 pcs Shipping Container Box (Tube) Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. 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