ROHM RK3055E

RK3055E
Transistors
10V Drive Nch MOS FET
RK3055E
zStructure
Silicon N-channel MOS FET
zExternal dimensions (Unit : mm)
CPT3
6.5
5.1
2.3
0.5
0.75
(1)
(2)Drain
0.8Min.
0.65
0.9
(1)Gate
9.5
2.5
0.9
1.5
5.5
1.5
zFeatures
1) Low On-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) 4V drive.
5) Drive circuits can be simple.
6) Parallel use is easy.
2.3
(2)
(3)
2.3
0.5
1.0
Abbreviated symbol : 3055E
(3)Source
zApplications
Switching
zPackaging specifications
Package
Type
zInner circuit
Taping
TL
Code
Basic ordering unit (pieces)
2500
RK3055E
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
zAbsolute maximum ratings (Ta=25°C)
Symbol
Parameter
Limits
Unit
Drain-source voltage
VDSS
60
V
Gate-source voltage
VGSS
±20
V
Drain current
Continuous
Pulsed
Reverse drain
current
ID
8
A
IDP∗
20
A
Continuous
IDR
8
A
Pulsed
IDRP∗
20
A
Total power dissipation (Tc=25°C)
PD
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗
Pw≤10µs, Duty cycle≤1%
Rev.A
1/4
RK3055E
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Min.
Typ.
Max.
Unit
IGSS
−
−
±100
nA
VGS=±20V, VDS=0V
V(BR)DSS
60
−
−
V
ID=1mA, VGS=0V
Symbol
Gate-source leakage
Drain-source breakdown voltage
Test Conditions
IDSS
−
−
10
µA
VDS=60V, VGS=0V
Gate threshold voltage
VGS(th)
1.0
−
2.5
V
VDS=10V, ID=1mA
Static drain-source on-state resistance
RDS(on)
Zero gate voltage drain current
Yfs ∗
Forward transfer admittance
−
−
0.15
Ω
ID=4A, VGS=10V
4.0
−
−
S
ID=4A, VDS=15V
Input capacitance
Ciss
−
520
−
pF
VDS=10V
Output capacitance
Coss
−
240
−
pF
VG=0V
Reverse transfer capacitance
Crss
−
100
−
pF
f=1MHz
Turn-on delay time
td(on)
−
5.0
−
ns
ID=2.5A, VDD
tr
−
20
−
ns
VGS=10V
td(off)
−
50
−
ns
RL=12Ω
tf
−
20
−
ns
RG=10Ω
Rise time
Turn-off delay time
Fall time
∗
30V
Pw ≤ 300µs, Duty cycle ≤ 1%
zElectrical characteristics curve
10
100µs
PW
DC
2
1m
s
=1
0m
s
Op
er
at
ion
1
0.5
0.2 Tc=25°C
Single pulse
0.1
0.5
1
2
10V
8V
6V
5V
8
7
4V
6
5
4
3
2
5
10
20
50
0
0
100
VDS=10V
5 Pulsed
Ta=125°C
75°C
2
25°C
−25°C
1
0.5
0.2
0.1
0.05
VGS=3V
0.02
1
DRAIN-SOURCE VOLTAGE : VDS (V)
1
2
3
4
5
0.01
0
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Maximum Safe Operating Area
3.0
2.0
1.0
0
−50 −25
0
25
50
75
100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.4 Gate Threshold Voltage
Fig.9 vs. Channel Temperature
2
1
0.5
Ta=125°C
75°C
25°C
−25°C
0.2
0.1
0.05
0.02
0.01
0.01 0.02 0.05 0.1 0.2
3
4
5
6
7
8
10
VGS=10V
5 Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
VDS=10V
ID=1mA
2
Fig.3 Typical Transfer Characteristics
10
4.0
1
GATE-SOURCE VOLTAGE : VGS (V)
Fig.2 Typical Output Characteristics
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
GATE THRESHOLD VOLTAGE : VGS(th) (V)
10
Ta=25°C
Pulsed
9
DRAIN CURRENT : ID (A)
a
re
sa
thi S(on)
n
20
i
D
on y R
ati b
10 per ited
O lim
is
5
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
50
0.5
1
2
5
10
DRAIN CURRENT : I D (A)
Fig.5 Static Drain-Source On-State Resistance
Fig.9 vs. Drain Current ( Ι )
VGS=4V
5 Pulsed
2
1
0.5
Ta=125°C
75°C
25°C
−25°C
0.2
0.1
0.05
0.02
0.01
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10.0
DRAIN CURRENT : I D (A)
Fig.6 Static Drain-Source On-State Resistance
Fig.9 vs. Drain Current ( ΙΙ )
Rev.A
2/4
RK3055E
0.6
Ta=25°C
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
0.2
ID=5A
2.5A
0.1
0
5
10
15
0.5
0.4
0.3
0.2
ID=5A
0
−50 −25
20
Ta=125°C
75°C
25°C
−25°C
1
0.5
0.2
0.1
0.05
0
0.5
1.0
1.5
tf
tr
20
10
td(on)
5
2
0.05
0.1
0.2
0.5
1
2
5
DRAIN CURRENT : I D (A)
Fig.13 Switching Characteristics
(See Figures 16 and 17 for
the measurement circuit
and resultant waveforms)
10
Ta = −25°C
25°C
75°C
125°C
5
2
1
0.5
0.2
0.1
0.01 0.02 0.05 0.1 0.2
0.5
1
VGS=10V
0.5
0.1
0.05
5.0 10
Fig.9 Forward Transfer Admittance
Fig.9 vs. Drain Current
Ta=25°C
f=1MHz
VGS=0V
Pulsed
5000
0V
2.0
DRAIN CURRENT : I D (A)
2000
1000
500
Ciss
C os
200
s
Crs
100
s
50
20
0.01
0
1.0
0.5
1.5
10
0.1 0.2
0.5
1
2
5
10 20
50 100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.11 Reverse Drain Current
Fig.14 vs. Source-Drain Voltage ( ΙΙ )
Fig.12 Typical Capacitance
Fig.14 vs. Drain-Source Voltage
1000
td(off)
50
20
10000
1
REVERSE RECOVERY TIME : trr (ns)
SWITCHING TIME : t (ns)
100
100 125 150
SOURCE-DRAIN VOLTAGE : VSD (V)
Ta=25°C
VDD=30V
VGS=10V
RG=10Ω
Pulsed
200
75
Ta=25°C
Pulsed
Fig.10 Reverse Drain Current
Fig.14 vs. Source-Drain Voltage ( Ι )
500
50
5
SOURCE-DRAIN VOLTAGE : VSD (V)
1000
25
VDS=15V
50 Pulsed
Fig.8 Static Drain-Source On-State Resistance
Fig.9 vs. Channel Temperature
REVERSE DRAIN CURRENT : IDR (A)
REVERSE DRAIN CURRENT : IDR (A)
VGS=0V
Pulsed
2
0
100
CHANNEL TEMPERATURE : Tch (°C)
Fig.7 Static Drain-Source On-State Resistance
Fig.9 vs. Gate-Source Voltage
5
2.5A
0.1
GATE-SOURCE VOLTAGE : VGS (V)
10
VGS=10V
Pulsed
CAPACITANCE : C (pF)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
0.3
FORWARD TRANSFER ADMITTANCE : YfS (S)
Transistors
10
di/dt=50A/µs
VGS=0V
500 Ta=25°C
Pulsed
100
50
10
0.1
0.2
0.5
1
2
5
10
REVERSE DRAIN CURRENT : IDR (A)
Fig.14 Reverse Recovery Time
Fig.14 vs. Reverse Drain Current
Rev.A
3/4
RK3055E
Transistors
NORMALIZED TRANSIENT : r (t)
THERMAL RESISTANCE
10
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
Tc=25°C
θth (ch-c) (t)=r (t) θth (ch-c)
θth (ch-c)=6.25°C/W
0.01
0.01
Single pulse
0.001
1µ
PW
T
100µ
1m
10m
100m
D=PW
T
1
10
PULSE WIDTH : PW (s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
zSwitching characteristics measurement circuit
Pulse Width
VGS
RG
ID
D.U.T.
VDS
RL
VGS
90%
50%
10%
50%
10%
VDS
10%
VDD
90%
90%
td (on)
ton
Fig.16 Switching Time Test Circuit
tr
td (off)
tf
toff
Fig.17 Switching Time Waveforms
Rev.A
4/4
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1