R5021ANX Transistors 10V Drive Nch MOSFET R5021ANX zDimensions (Unit : mm) zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be r30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 12.0 2.8 0.8 (1)Base 2.54 (2)Collector 2.54 0.75 2.6 (1) (2) (3) (3)Emitter zApplications Switching zPackaging specifications zInner circuit Package Type Bulk − Code Basic ordering unit (pieces) 500 ∗1 R5021ANX zAbsolute maximum ratings (Ta=25qC) Symbol Limits Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 V ∗3 ±21 A ∗1 ±84 A 21 A ∗1 Parameter Drain current Source current (Body Diode) Continuous ID Pulsed IDP Continuous IS Pulsed ISP ∗3 84 A Avalanche Current IAS ∗2 10.5 A Avalanche Energy EAS ∗2 29.6 mJ Total power dissipation (Tc=25°C) PD 50 W Channel temperature Tch 150 °C Tstg −55 to +150 °C Range of storage temperature (1) (1) Gate (2) Drain (3) Source (2) (3) ∗1 Body Diode ∗1 Pw≤10μs, Duty cycle≤1% ∗2 L 500μH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum temperature allowed 1/5 R5021ANX Transistors zThermal resistance Parameter Channel to case Symbol Limits Unit Rth(ch-c) 2.5 °C/W zElectrical characteristics (Ta=25qC) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Symbol Min. Typ. Max. Unit IGSS − − ±100 nA VGS=±30V, VDS=0V V(BR)DSS 500 − − V ID=1mA, VGS=0V IDSS − − 100 μA VDS=500V, VGS=0V Conditions Gate threshold voltage VGS(th) 2.5 − 4.5 V VDS=10V, ID=1mA Static drain-source on-state resistance RDS(on) ∗ − 0.16 0.21 Ω ID=10.5A, VGS=10V Forward transfer admittance | Yfs | 7 ∗ − − S ID=10.5A, VDS=10V Input capacitance Ciss − 2300 − pF VDS=25V Output capacitance Coss − 1000 − pF VGS=0V Reverse transfer capacitance Crss Turn-on delay time td(on) tr Rise time Turn-off delay time td(off) tf Fall time Qg Total gate charge Gate-source charge Qgs Gate-drain charge Qgd − 70 − pF f=1MHz ∗ − 47 − ns ID=10.5A, VDD 250V ∗ − 70 − ns VGS=10V ∗ − 200 − ns RL=23.8Ω ∗ − 70 − ns RG=10Ω ∗ − 64 − nC ∗ − 11 − nC ∗ − 27 − nC VDD 250V ID=21A VGS=10V RL=11.9Ω / RG=10Ω ∗ Pulsed zBody diode characteristics (Source-drain) (Ta=25qC) Parameter Forward voltage Symbol VSD ∗ Min. − Typ. − Max. 1.5 Unit V Conditions IS= 21A, VGS=0V ∗ Pulsed 2/5 R5021ANX Transistors zElectrical characteristic curves 40 PW = 100us 7.0V 8.0V PW = 1ms DRAIN CURRENT: ID (A) PW = 10ms 1 DC operation 0.1 30 6.0V 20 5.5V 10 10 100 1000 10 5.5V 5 30 40 50 5.0V 0 0.1 0.01 3.0 4.5 6.0 5 4 3 2 1 0 -50 GATE-SOURCE VOLTAGE : VGS (V) 0 50 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on) (ȍ) 0.4 0.3 ID = 21.0A ID = 10.5A 0.1 0 5 10 GATE-SOURCE VOLTAGE : VGS (V) 1 15 5 0.1 0.01 0.1 150 1 10 100 DRAIN CURRENT : ID (A) Fig.5 Gate Threshold Voltage Fig.6 Static Drain-Source On-State 䇭䇭䇭䇭vs. Channel Temperature 䇭䇭䇭䇭 Resistance vs. Drain Current 100 0.6 0.5 4 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C VGS= 10V Pulsed CHANNEL TEMPERATURE: Tc h (°C) Ta=25°C Pulsed 3 10 VDS= 10V ID = 1mA Fig.4 Typical Transfer Characteristics 0.6 2 Fig.3: Typical Output Characteristics( 㸈) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (ȍ) GATE THRESHOLD VOLTAGE: VGS(th) (V) Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 1.5 1 DRAIN-SOURCE VOLTAGE: VDS (V) Fig.2: Typical Output Characteristics( 㸇) 10 DRAIN CURRENT : ID (A) 20 6 0 10 DRAIN-SOURCE VOLTAGE: VDS (V) VDS= 10V Pulsed 0.2 6.0V 0 0 100 0.001 0.0 7.0V 6.5V VGS= 4.5V 0 1 Fig.1 Maximum Safe Operating Aera 1 10V 8.0V 15 VGS= 4.5V DRAIN-SOURCE VOLTAGE : VDS ( V ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on) (ȍ) Ta= 25°C Pulsed 5.0V Ta = 25°C Single Pulse 0.01 0.1 Ta= 25°C Pulsed 6.5V FORWARD TRANSFER ADMITTANCE : |Yfs| (S) DRAIN CURRENT : ID (A) 10 20 10V Operation in this area is limited by R DS(ON) DRAIN CURRENT: ID (A) 100 VGS= 10V Pulsed 0.5 0.4 0.3 ID = 21.0A 0.2 ID = 10.5A 0.1 0 -50 0 50 100 CHANNEL TEMPERATURE: Tch (°C) 150 VDS= 10V Pulsed 10 1 Ta= -25°C Ta= 25°C Ta= 75°C Ta= 125°C 0.1 0.01 0.01 0.1 1 10 100 DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Fig.8 Static Drain-Source On-State Fig.9 Forward Transfer Admittance 䇭䇭䇭㩷Resistance vs. Gate Source Voltage 䇭䇭䇭䇭Resistance vs. Channel Temperature 䇭䇭䇭䇭 vs. Drain Current 3/5 R5021ANX Transistors 10000 15 10 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 0.1 1000 Cos s 100 C rs s Ta= 25°C f= 1MHz VGS= 0V 10 1 0.01 0 0.5 1 0.1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) 1 10 100 1000 Ta= 25°C VDD = 250V ID = 21A R G= 10ȍ Pulsed 10 5 0 0 10 20 30 40 50 60 70 80 TOTAL GATE CHARGE : Qg (nC) DRAIN-SOURCE VOLTAGE : VDS (V) Fig.11 Typical Capacitance vs. Drain-Source Voltage Fig.10 Reverse Drain Current vs. 䇭䇭䇭䇭㩷Sourse-Drain Voltage Fig.12 Dynamic Input Characteristics 10000 1000 REVERSE RECOVERY TIME: trr (ns) GATE-SOURCE VOLTAGE : VGS (V) C is s VGS= 0V Pulsed CAPACITANCE : C (pF) REVERSE DRAIN CURRENT : IDR (A) 100 Ta= 25°C VDD = 250V VGS= 10V R G= 10ȍ Pulsed SWITCHING TIME : t (ns) tf 100 Ta= 25°C di / dt= 100A / μs VGS= 0V Pulsed 1000 td(off) 100 10 td(on) tr 1 10 0.1 1 10 0.1 100 1 REVERSE DRAIN CURRENT : IDR (A) 10 100 DRAIN CURRENT : ID (A) Fig.13 Reverse Recovery Time vs.Reverse Drain Current Fig.14 Switching 䇭Characteristics NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 10 1 Ta = 25°C Single Pulse : 1Unit Rth䋨ch-a䋩䋨t䋩 = 䌲䋨t䋩×Rth䋨ch-a䋩 Rth䋨ch-a䋩 = 45.9°C/W 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width 4/5 90 R5021ANX Transistors zSwitching characteristics measurement circuit Fig.1-1 Switching Time Measurement Circuit! IG(Const.) Fig.2-1 Gate Charge Measurement Circuit! Fig.3-1 Avalanche Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-2 Gate Charge Waveform Fig.3-2 Avalanche Waveform 5/5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0