R5013ANX Transistors 10V Drive Nch MOSFET R5013ANX zDimensions (Unit : mm) zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be r30V. 5) Drive circuits can be simple. 6) Parallel use is easy. 12.0 2.8 0.8 (1)Base 2.54 (2)Collector 2.54 0.75 2.6 (1) (2) (3) (3)Emitter zApplications Switching zPackaging specifications zInner circuit Package Bulk − Code Type 500 Basic ordering unit (pieces) ∗1 R5013ANX zAbsolute maximum ratings (Ta=25qC) Parameter Symbol Limits Unit VDSS 500 V Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) ±30 V ∗3 ±13 A ∗1 ±52 A 13 A ∗1 52 A VGSS Continuous ID Pulsed IDP Continuous IS Pulsed ISP ∗3 Avalanche Current IAS ∗2 13 A Avalanche Energy EAS ∗2 46 mJ Total power dissipation (Tc=25°C) PD 50 W Channel temperature Tch 150 °C Range of storage temperature Tstg −55 to +150 °C (1) (1) Gate (2) Drain (3) Source (2) (3) ∗1 Body Diode ∗1 Pw≤10μs, Duty cycle≤1% ∗2 L 500μH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum tempterature allowed zThermal resistance Parameter Channel to case Symbol Limits Unit Rth(ch-c) 2.5 °C/W Rev.A 1/5 R5013ANX Transistors zElectrical characteristics (Ta=25qC) Symbol Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Min. Typ. Max. Unit IGSS − − ±100 nA VGS=±30V, VDS=0V V(BR)DSS 500 − − V ID=1mA, VGS=0V IDSS − − 100 μA VDS=500V, VGS=0V VGS(th) 2.5 − 4.5 V VDS=10V, ID=1mA − Static drain-source on-state resistance RDS(on) Forward transfer admittance | Yfs | ∗ ∗ Conditions 0.29 0.38 Ω ID=6.5A, VGS=10V 4.0 S ID=6.5A, VDS=10V VDS=25V − − Input capacitance Ciss − 1300 − pF Output capacitance Coss − 500 − pF VGS=0V Reverse transfer capacitance Crss − 40 − pF f=1MHz Turn-on delay time td(on) ∗ − 30 − ns ID=6.5A, VDD 250V ∗ − 32 − ns VGS=10V ∗ − 90 − ns RL=38.5Ω ∗ − 30 − ns RG=10Ω ∗ − 35 − nC ∗ − 8 − nC ∗ − 15 − nC VDD 250V ID=13A VGS=10V RL=19.2Ω / RG=10Ω tr Rise time Turn-off delay time td(off) tf Fall time Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd ∗ Pulsed zBody diode characteristics (Source-drain) (Ta=25qC) Parameter Forward voltage Symbol VSD ∗ Min. − Typ. − Max. 1.5 Unit V Conditions IS= 13A, VGS=0V ∗ Pulsed Rev.A 2/5 R5013ANX Transistors zElectrical characteristic curves 10 10V PW =100us DRAIN CURRENT: ID (A) PW =1ms 1 DC operation 0.1 Ta = 25°C Single Pulse 0.01 15 5.5V 10 5.0V 5 VGS= 4.5V 10 100 1000 GATE THRESHOLD VOLTAGE: VGS(th) (V) DRAIN CURRENT : ID (A) VDS= 10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 1 0.1 0.01 0.001 0.0 1.5 3.0 4.5 6.0 10 0.6 ID= 13.0A 0.4 ID= 6.5A 0.2 0 0 5 10 15 GATE-SOURCE VOLTAGE : VGS (V) Fig.7 Static Drain-Source On-State Resistance vs. Gate Source 7.0V 5.0V 6.5V 4 6.0V VGS= 4.5V 2 30 40 50 0 1 2 3 4 5 DRAIN-SOURCE VOLTAGE: VDS (V) DRAIN-SOURCE VOLTAGE: VDS (V) Fig.2: Typical Output Characteristics(㸇) Fig.3: Typical Output Characteristics(㸈) 10 5 4 3 2 1 0 -50 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C VGS= 10V Pulsed 1 0.1 0.01 0 50 100 150 0.1 CHANNEL TEMPERATURE: Tch (°C) 1 10 100 DRAIN CURRENT : ID (A) Fig.5 Gate Threshold Voltage vs. Channel STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (ȍ) 0.8 20 VDS= 10V ID= 1mA Fig.4 Typical Transfer Characteristics Ta=25°C Pulsed 5.5V 8.0V 6 6 GATE-SOURCE VOLTAGE : VGS (V) 1 10V 0 0 Fig.1 Maximum Safe Operating Aera STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (ȍ) Ta= 25°C Pulsed 8 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (ȍ) 1 Ta= 25°C Pulsed 6.0V 6.5V DRAIN-SOURCE VOLTAGE : VDS ( V ) 10 10 8.0 0 0.1 100 7.0V Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 1 100 VGS= 10V Pulsed 0.8 0.6 ID= 13.0A 0.4 ID= 6.5A 0.2 0 -50 0 50 100 150 CHANNEL TEMPERATURE: Tch (°C) Fig.8 Static Drain-Source On-State Resistance vs. Channel FORWARD TRANSFER ADMITTANCE : |Yfs| (S) DRAIN CURRENT : ID (A) Operation in this area is limited by RDS(ON) DRAIN CURRENT: ID (A) 20 100 VDS= 10V Pulsed 10 1 Ta= -25°C Ta= 25°C Ta= 75°C Ta= 125°C 0.1 0.01 0.01 0.1 1 10 100 DRAIN CURRENT : ID (A) Fig.9 Forward Transfer Admittance vs. Drain Current Rev.A 3/5 R5013ANX 15 VGS= 0V Pulsed 10 Cis 1 Ta= Ta= Ta= Ta= 0.1 125°C 75°C 25°C -25°C 1000 100 Ta= 25°C f= 1MHz VGS= 0V 10 0.5 1 Ta= 25°C VDD= 250V ID= 13A RG= 10ȍ Pulsed 10 5 0 0.01 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) 0.1 1 10 100 1000 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.11 Typical Capacitance vs. Drain-Source Voltage Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 0 10 20 30 40 TOTAL GATE CHARGE : Qg (nC) 100 Ta= 25°C di / dt= 100A / μs VGS= 0V Pulsed Ta= 25°C VDD= 250V VGS= 10V RG= 10ȍ Pulsed tf 1000 td(off) 100 10 td(on) tr 1 10 0.1 1 10 0.01 100 0.1 1 10 100 DRAIN CURRENT : ID (A) REVERSE DRAIN CURRENT : IDR (A) Fig.14 Switching䇭Characteristics Fig.13 Reverse Recovery Time vs.Reverse Drain Current 1 0.1 Ta = 25°C Single Pulse : 1Unit Rth䋨ch-a䋩䋨t䋩 = 䌲䋨t䋩×Rth䋨ch-a䋩 Rth䋨ch-a䋩 = 49.9°C/W 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 50 Fig.12 Dynamic Input Characteristics 10000 1000 SWITCHING TIME : t (ns) REVERSE RECOVERY TIME: trr (ns) Coss Crss 1 0.01 0 NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) GATE-SOURCE VOLTAGE : VGS (V) 10000 100 CAPACITANCE : C (pF) REVERSE DRAIN CURRENT : IDR (A) Transistors 1000 PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse W idth Rev.A 4/5 R5013ANX Transistors zSwitching characteristics measurement circuit Fig.1 Switching time measurement circuit! IG(Const.) Fig.2 Switching waveforms Fig.3 Gate charge measurement circuit! Fig.4 Gate charge waveform Fig.5 Avalanche measurement circuit Fig.6 Avalanche waveform Rev.A 5/5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0