Data Sheet Ultra Low Capacitance ESD Protection Diode RSAC6.8CS lApplications ESD Protection lDimensions (Unit : mm) lLand size figure (Unit : mm) 0.55 0.16±0.05 4)By chip-mounter, automatic mounting is possible. 0.45 1.0±0.05 0.9±0.05 0.5 lFeatures 1)Ultra small mold type.(VMN2) 2)Low Capacitance. 3)High Reliability. 0.45 0.6±0.05 VMN2 0.156 lConstruction Silicon epitaxial planar 0.37±0.03 0.35±0.1 lStructure ROHM : VMN2 dot (year week factory) + day lTaping dimensions (Unit : mm) 2±0.05 0.7±0.05 2±0.05 φ 1.55 0.2±0.05 8.0±0.2 1.1±0.05 3.5±0.05 1.75±0.1 4±0.1 φ 0.5 lAbsolute maximum ratings (Ta=25C) Parameter Symbol Power dissipation P Junction temperature Tj Storage temperature Tstg lElectrical characteristics (Ta=25C) Parameter Symbol Vz Zener voltage 0.52 4.0±0.1 Limits 100 150 Unit mW C C -55 to +150 Min. Typ. Max. Unit Conditions 6.7 - 7.33 V IZ=5mA Reverse current IR - - 1.0 μA Capacitance between terminals Ct - 0.3 - pF VR=3.0V VR=0V , f=1MHz * Zener voltage (VZ) shall be measured at 40ms after loading current. * Electrical characteristic assurance is just only zener direction. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.10 - Rev.A 100 1000 Ta=25°C Ta=75°C Ta=-25°C REVERSE CURRENT:IR (pA) 10 ZENER CURRENT:Iz(mA) Data Sheet RSAC6.8CS Ta=125°C 1 0.1 Ta=125°C 100 Ta=75°C 10 Ta=25°C 1 0.01 0.001 0.1 5 6 7 8 9 0 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS 1 2 7.3 10 f=1MHz Ta=25°C IZ=5mA n=30pcs ZENER VOLTAGE:Vz(V) 7.2 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 3 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 1 7.1 7 AVE:7.05V 6.9 0.1 6.8 0 0.5 1 1.5 2 2.5 3 Vz DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1 Ta=25°C VR=3V n=30pcs 40 30 20 AVE:8.68pA 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(pA) 50 0 Ta=25°C f=1MHz VR=0V n=10pcs 0.9 0.8 0.7 0.6 0.5 AVE:0.303pF 0.4 0.3 0.2 0.1 0 Ct DISPERSION MAP IR DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.10 - Rev.A Data Sheet RSAC6.8CS 1000 1000 Rth(j-a) TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) DYNAMIC IMPEDANCE:Zz(Ω) On glass-epoxy substrate 100 10 1 100 10 0.001 1 0.1 Rth(j-c) 10 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 AVE:1.00kV 0 C=200pF R=0Ω C=150pF R=330Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A