Photo IC diode
S9648-100
Plastic package shaped the same as metal package
The S9648-100 photo IC has spectral response close to human eye sensitivity. Two active areas are made on a single chip. Almost
only the visible range can be measured by finding the difference between the two output signals in the internal current amplifier
circuit. Compared to the conventional type, the S9648-100 offers lower output fluctuations for light sources producing the same illuminance at different color temperatures. The S9648-100 is encapsulated in a plastic package having the same shape as to metal
packages. The shape of the S9648-100 also resembles our 5R type visible sensors (CdS photoconductive cells), so the S9648-100
can be used as a replacement for those visible sensors.
Features
Applications
Spectral response close to human eye sensitivity
is attained without using visual-compensated filter.
Energy-saving sensor for TVs, etc.
Operation just as easy to use as a photodiode
Lower output-current fluctuations compared with
phototransistors and CdS photoconductive cells.
Light dimmers for liquid crystal panels
Various types of light level measurement
Excellent linearity
Low output fluctuations for light sources producing the
same illuminance at different color temperatures
Absolute maximum ratings (Ta=25 °C)
Parameter
Maximum reverse voltage
Photocurrent
Forward current
Power dissipation *1
Operating temperature
Storage temperature
Symbol
VR Max.
IL
IF
P
Topr
Tstg
Value
-0.5 to 12
5
5
250
-30 to +80
-40 to +85
Unit
V
mA
mA
mW
°C
°C
*1: Derate power dissipation at a rate of -3.3 mW/°C above Ta=25 °C.
Electrical and optical characteristics (Ta=25 °C, unless otherwise noted.)
Parameter
Spectral response range
Peak sensitivity wavelength
Dark current
Photocurrent
Symbol
λ
λp
ID
IL
Rise time *2
tr
Fall time *2
tf
Condition
VR=5 V
VR=5 V, 2856 K, 100 lx
10 to 90 %, VR=7.5 V
RL=10 kΩ, λ=560 nm
90 to 10 %, VR=7.5 V
RL=10 kΩ, λ=560 nm
Min.
0.18
Typ.
300 to 820
560
1.0
0.26
Max.
50
0.34
Unit
nm
nm
nA
mA
-
6.0
-
ms
-
2.5
-
ms
www.hamamatsu.com
1
Photo IC diode
S9648-100
*2: Rise/fall time measurement method
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KPICC0041EA
Spectral response
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KPICB0085EB
KPICB0086EB
Rise/fall times vs. load resistance
100
(Typ. Ta=25 °C, VR=7.5 V, λ=560 nm, Vo=2.5 V)
tr
Rise/fall times (ms)
10
1
tf
0.1
0.01
100
1k
10 k
100 k
1M
Load resistance (Ω)
KPICB0077EA
2
Photo IC diode
S9648-100
Operating circuit example
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The photo IC diode must be reverse-biased so that a positive potential is applied to the cathode.
To eliminate high-frequency components, we recommend placing
a load capacitance CL in parallel with load resistance RL as a lowpass filter.
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Cut-off frequency (fc)
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Dimensional outline (unit: mm)
0.75 ± 0.25
0.13
5.0 ± 0.2
Center of active area
active area 0.46 × 0.32
(4.3)
2.54 ± 0.5
(Specified at the lead root)
(2 ×) 1.0 Max.
1.0 Min.
(2 ×) 0.5
Sn Plated leads
(1.0)
(2 ×) 1.0 MAX.
25.4 Min.
3.5 ± 0.3
1.5 MAX.
Photosensitive
surface
Fillet
Tie-bar cut point (including burr, no plating)
Anode
Cathode
Lead surface finish: Sn plating
Packing: Polyethylene pack [anti-static type]
(500 pcs/pack)
KPICA0057EC
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Cat. No. KPIC1057E04 Nov. 2008 DN