Characteristics and use of photo IC diodes

Technical information
Characteristics and use of photo IC diodes
1
[Figure 1] Spectral response
Overview
(a) Infrared type (➀)
(Typ. Ta=25 °C, VR=5 V)
1.0
The photo IC diodes are devices that boost the photocurrent
generated from a photodiode approx. 1300 times (or 30000
times). They output current and can be used in the same
way as a photodiode applied with a reverse bias.
The photo IC diodes are used in various types of light level
detection applications. For example, a type with a spectral
response close to human eye sensitivity is used as an energysaving sensor to adjust the brightness of TVs and the like.
Relative sensitivity
0.8
0.6
0.4
0.2
Features
0
200
The photo IC diodes are two-terminal devices that are as
easy to use as a photodiode yet produce a large current
equivalent to that of a phototransistor. It also has good
linearity characteristics.
Table 1 shows the photo IC diode lineup. When classified
by spectral response, there are two types available:
infrared and visual-sensitive compensation. The visualsensitive compensation type provides a spectral response
close to human eye sensitivity without a visual-sensitive
compensation filter.
400
600
800
1000
1200
Wavelength (nm)
KPICB0036EA
(b) Visual-sensitive compensation type (➁)
(Typ. Ta=25 °C, VR=5 V)
1.0
0.9
Human eye
sensitivity
Relative sensitivity
0.8
0.7
0.6
0.5
S9648-200SB
0.4
0.3
0.2
0.1
0
200
400
600
800
1000
1200
Wavelength (nm)
KPICB0085EC
[Table 1] Photo IC diode lineup
Product
S7183
S7184
Type

Infrared type
Package
(plastic)
SIP with lens
Surface mount type
Peak sensitivity
wavelength
(nm)
650
Photocurrent
2856 K, 100 lx
(mA)
1.0
0.18
S9066-211SB
SIP
0.19 to 0.35
S9067-201CT
Surface mount type
0.18 to 0.34
S9648-200SB

S10604-200CT
S11153-01MT
S11154-201CT
Visual-sensitive
compensation
type
Head-on type (same form as the CdS cell 5R type)
560
Surface mount type
Surface mount type
‘
Surface mount type
0.18 to 0.34
0.21 to 0.39
0.325 to 0.495
580
0.07 to 0.15
1
(c) Visual-sensitive compensation type (➂)
[Figure 3] Application circuit example (➁➂)
Photodiode
for signal detection
(Typ. Ta=25 °C, VR=5 V)
1.0
Photodiode
for signal offset
0.9
Cathode
Relative sensitivity
0.8
0.7
Internal protection
resistance
(approx. 150 Ω)
0.6
0.5
0.4
The drawing surrounded
by the dotted line shows
a schematic diagram of
photo IC diode.
S11154-201CT
0.3
Human eye sensitivity
0.2
0.1
0
200
Reverse bias
power supply
Current amp
(approx. 30000 times)
Anode
400
600
800
1000
1200
Vout
RL
CL
Wavelength (nm)
KPICC0091ED
KPICB0129EB
[Figure 4] Photocurrent vs. illuminance (S9648-200SB)
(Typ. Ta=25 °C, VR=5 V, 2856 K)
10 mA
2
Structure
Figure 2 shows a photo IC diode application circuit
example. The photo IC diode amplifies the photocurrent
generated by a photodiode.
[Figure 2] Application circuit example (➀)
Drawing surrounded
by dotted lines shows
a schematic diagram
of photo IC diode.
Cathode
Photocurrent
1 mA
Internal protection resistance
(approx. 150 Ω)
100 μA
10 μA
1 μA
Reverse bias
power supply
100 nA
0.1
1
10
100
1000
10000
Illuminance (lx)
KPICB0083EC
Photodiode for
signal detection
Current amp
(approx. 1300 times)
[Figure 5] Dark current vs. ambient temperature
(S9648-200SB)
Anode
CL
Vout
(Typ. VR=5 V)
10 μA
RL
1 μA
KPICC0018EC
3
Characteristics
This section explains the characteristics of a typical photo
IC diode S9648-200SB.
Figure 3 is an application circuit example of the visualsensitive compensation type.
There are two photosensitive areas on the chip, one for
signal detection and another for compensation with
sensitivities only in the near infrared region. An internal
arithmetic circuit subtracts the photocurrent of the
photodiode for compensation from the photocurrent of
the photodiode for signal detection resulting in a spectral
response with sensitivities limited more or less to the
visible region. The signal is then amplified by a current
amplifier and is output.
Figure 4 shows the linearity of the photocurrent. If the
illuminance exceeds 500 lx, the linearity tends to degrade.
2
Dark current
100 nA
10 nA
1 nA
100 pA
10 pA
-50
-25
0
25
50
75
100
Ambient temperature (°C)
KPICB0157EB
[Figure 6] Photocurrent vs. ambient temperature
(S9648-200SB)
[Figure 9] Directivity (S9648-200SB)
(Typ. Ta=25 °C, tungsten lamp)
(Typ. VR=5 V, 2856 K, 100 lx, * 1 assumed at 25 °C)
1.8
30°
10° 0°
10°
20°
30°
40°
40°
50°
1.4
50°
60°
60°
1.2
70°
70°
1.0
80°
0.8
90°
100 80
80°
60
40
20
0
20
40
60
90°
80 100
Relative sensitivity (%)
0.6
KPICB0174EA
0.4
[Figure 10] Dimensional outline (S9648-200SB, unit: mm)
0.2
-25
0
25
50
75
Center of photosensitive area
Photosensitive area 0.46 × 0.32
100
Ambient temperature (°C)
KPICB0158EB
0.13
0
-50
ϕ5.0 ± 0.2
Photocurrent (relative value*)
1.6
20°
0.75 ± 0.25
[Figure 7] Dark current vs. reverse voltage (S9648-200SB)
3.5 ± 0.3
1.5 max.
4.0
(4.3)
3.0
(2 ×) 0.5
Sn plated lead
1.0
2.54 ± 0.5
(specified at lead root)
0
0
2
4
6
8
10
12
(2 ×) 1.0 max.
14
Fillet
Tie-bar cut point (including burr, no plating)
Anode
Cathode
Lead surface finish: Sn plating
Packing: polyethylene pack [anti-static type]
(500 pcs/pack)
Reverse voltage (V)
KPICB0159EA
[Figure 8] Rise and fall times vs. load resistance (S9648-200SB)
100
(1.0)
(2 ×) 1.0 max.
2.0
1.0 min.
Dark current (nA)
Photosensitive
surface
25.4 min.
(Typ. Ta=25 °C)
5.0
(Typ. Ta=25 °C, VR=7.5 V, λ=560 nm, Vo=2.5 V)
KPICA0057ED
Rise/fall times (ms)
10
Rise time
1
Fall time
0.1
0.01
100
1k
10 k
100 k
1M
Load resistance (Ω)
KPICB0077EB
[Table 2] Absolute maximum ratings (Ta=25 °C) of S9648-200SB
Parameter
Symbol
Value
Unit
VR
-0.5 to 12
V
Photocurrent
IL
5
mA
Forward current
IR
5
mA
Reverse voltage
Operating temperature
Topr
-30 to +80
°C
Storage temperature
Tstg
-40 to +85
°C
3
[Table 3] Electrical and optical characteristics (Ta=25 °C) of S9648-200SB
Parameter
Symbol
Condition
Spectral response range
λ
Peak sensitivity wavelength
λp
Dark current
ID
VR=5 V
Photocurrent
IL
Rise time*
Fall time*
Min.
Typ.
Max.
Unit
320 to 820
nm
-
560
-
nm
-
1.0
50
nA
VR=5 V, 2856 K, 100 lx
0.18
-
0.34
mA
tr
10% to 90%, VR=7.5 V
RL=10 kΩ, λ=560 nm
-
6.0
-
ms
tf
90% to 10%, VR=7.5 V
RL=10 kΩ, λ=560 nm
-
2.5
-
ms
* Measurement method of rise and fall times
Pulsed light
from LED
(λ=560 nm)
2.5 V
90%
Vout
10%
Photo IC
diode
0.1 μF
tr
7.5 V
tf
Vout
Load
resistance RL
KPICC0229EC
[Figure 11] Color temperature distribution producing the
same integral value at human eye sensitivity
1.0
Human eye
sensitivity
Light output (reference value)
2856 K
0.8
0.6
0.4
5500 K
0.2
0
200
1.2
Relative sensitivity (1 assumed for 2856 K)
(Typ. Ta=25 °C)
[Figure 12] Light source color temperature vs. output
(Typ. Ta=25 °C, black body radiant flux light source)
S11154-201CT
1
S9648-200SB
0.8
0.6
0.4
0.2
0
2000
400
600
800
1000
3000
4000
5000
6000
7000
1200
Color temperature (K)
Wavelength (nm)
KPICB0106EC
Illuminance visible to a human at 2856 K
Illuminance visible to a human at 5500 K
KPICB0105EA
Figure 11 shows the human eye sensitivity cur ve
(characteristics of the human eye sensitivity to light) and
color temperature spectra. The graph is plotted so that
the illuminance observed by a person is the same for each
color temperature. It is desirable for the sensor’s spectral
response to match the human eye sensitivity curve, but
in reality, there is deviation. This deviation causes color
temperature error output. If we assume an incandescent
lamp that includes light output in the infrared region and
a fluorescent lamp that hardly includes it having the same
illuminance, the output values detected by a sensor that
has sensitivities in the infrared region will be different. A
visual-sensitive compensation type photo IC diode, such
as the S11154-201CT, does not use an external visualsensitive compensation filter, but its spectral response is
adjusted close to human eye sensitivity to reduce color
temperature error output (see Figure 12).
4
4
How to use
Because the photo IC diode amplifies the photocurrent
to output current, a large output voltage can be obtained
by connecting a load resistance. Connect the cathode so
that a positive potential is applied to it [Figures 2, Figure
3]. If high-frequency components must be eliminated, we
recommend that a low-pass filter load capacitance (CL)
be inserted in parallel with the load resistance (RL). In this
case, the cutoff frequency (fc) is expressed by equation (1).
fc =
1
............ (1)
2πCLRL
Figure 14 shows the photocurrent vs. reverse voltage
characteristics (light source: LED) for the measurement
circuit example in Figure 13. The output curves are shown
for each illuminance level of light source A conversion.
The output curve rises from a reverse voltage (rising
voltage) of approximately 0.7 V.
VR = Vbe(ON) + IL × Rin ............ (2)
[Figure 13] Measurement circuit example
IL
RL
(external resistor)
Rin=150 Ω
(protection resistor)
[Figure 14] Photocurrent vs. reverse voltage
(typical example)
(Typ. Ta=25 °C)
5
1600 lx
1380 lx
Internal protective
resistance Rin: approx. 150 Ω
4
Photocurrent (mA)
To protect the internal circuit in the event a current exceeding
the absolute maximum rating flows, a protection resistor
of approximately 150 Ω (±20%) is inserted. Reverse voltage
(VR) when the photo IC diode is saturated is the sum of
Vbe(ON) and the voltage drop across protective resistor
(Rin).
Saturation
region
approx. 1260 lx
1150 lx
3
880 lx
Load line
Vcc=5 V, RL=1 kΩ
2 Saturation
region
approx. 650 lx
600 lx
Load line
Vcc=3 V, RL=1 kΩ
300 lx
1
Vcc
0
0
Photo IC
diode
Rising voltage
Vbe(ON)≈0.7 V
1
2
3
4
5
Reverse voltage (V)
KPICB0107EC
KPICC0128ED
The photo IC diode’s reverse voltage (V R) is expressed
by equation (3) according to the voltage drop across the
external resistor. This is indicated as load lines in Figure 14.
VR = Vcc - IL × RL ............ (3)
In Figure 14, the intersections between the output curves
and the load lines are the saturation points. From these
points, the maximum detectable light level can be specified.
As the maximum light level is determined by supply voltage
(Vcc) and load resistance (RL), change them according to
your conditions.
Note: Vbe(ON) has a temperature characteristics of
approximately -2 mV/°C, and the protective resistor
approximately 0.1%/°C.
Information described in this material is current as of August, 2015.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and
the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products,
always contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within
that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper
product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
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Cat. No. KPIC9007E03 Aug. 2015 DN
5