INTEGRATED CIRCUITS SA615 High performance low power mixer FM IF system Product specification Replaces data of 1992 Nov 03 IC17 Data Handbook 1997 Nov 07 Philips Semiconductors Product specification High performance low power mixer FM IF system DESCRIPTION SA615 PIN CONFIGURATION The SA615 is a high performance monolithic low-power FM IF system incorporating a mixer/oscillator, two limiting intermediate frequency amplifiers, quadrature detector, muting, logarithmic received signal strength indicator (RSSI), and voltage regulator. The SA615 combines the functions of Signetics’ SA602 and SA604A, but features a higher mixer input intercept point, higher IF bandwidth (25MHz) and temperature compensated RSSI and limiters permitting higher performance application. The SA615 is available in 20-lead dual-in-line plastic, 20-lead SOL (surface-mounted miniature package) and 20-lead SSOP (shrink small outline package). N, D and DK Packages The SA605 and SA615 are functionally the same device types. The difference between the two devices lies in the guaranteed specifications. The SA615 has a higher ICC, lower input third order intercept point, lower conversion mixer gain, lower limiter gain, lower AM rejection, lower SINAD, higher THD, and higher RSSI error than the SA615. Both the SA605 and SA615 devices will meet the EIA specifications for AMPS and TACS cellular radio applications. RFIN 1 20 MIXER OUT RF BYPASS 2 19 IF AMP DECOUPLING XTAL OSC 3 18 IF AMP IN XTAL OSC 4 17 IF AMP DECOUPLING MUTEIN 5 16 IF AMP OUT VCC 6 15 GND RSSIOUT 7 14 LIMITER IN MUTED AUDIO OUT 8 13 LIMITER DECOUPLING UNMUTED AUDIO OUT 9 12 LIMITER DECOUPLING 10 11 LIMITER OUT QUADRATURE IN For additional technical information please refer to application notes AN1994, 1995 and 1996, which include example application diagrams, a complete overview of the product, and artwork for reference. NOTE: See back page for package dimensions SR00341 Figure 1. Pin Configuration FEATURES APPLICATIONS • Low power consumption: 5.7mA typical at 6V • Mixer input to >500MHz • Mixer conversion power gain of 13dB at 45MHz • Mixer noise figure of 4.6dB at 45MHz • XTAL oscillator effective to 150MHz (L.C. oscillator to 1GHz local • Cellular radio FM IF • High performance communications receivers • Single conversion VHF/UHF receivers • SCA receivers • RF level meter • Spectrum analyzer • Instrumentation • FSK and ASK data receivers • Log amps • Wideband low current amplification oscillator can be injected) • 102dB of IF Amp/Limiter gain • 25MHz limiter small signal bandwidth • Temperature compensated logarithmic Received Signal Strength Indicator (RSSI) with a dynamic range in excess of 90dB • Two audio outputs – muted and unmuted • Low external component count; suitable for crystal/ceramic/LC filters • Excellent sensitivity: 0.22µV into 50Ω matching network for 12dB SINAD (Signal to Noise and Distortion ratio) for 1kHz tone with RF at 45MHz and IF at 455kHz • SA615 meets cellular radio specifications • ESD hardened ORDERING INFORMATION DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG # 20-Pin Plastic Dual In-Line Package (DIP) –40 to +85°C SA615N SOT146-1 20-Pin Plastic Small Outline Large (SOL) package –40 to +85°C SA615D SOT108-1 20-Pin Plastic Shrink Small Outline Package (SSOP) –40 to +85°C SA615DK SOT266-1 1997 Nov 07 2 853-1402 18665 Philips Semiconductors Product specification High performance low power mixer FM IF system SA615 BLOCK DIAGRAM 20 19 18 17 16 15 14 13 IF AMP 12 11 LIMITER RSSI OSCILLATOR 1 2 E B 3 4 5 6 7 8 9 10 SR00342 Figure 2. Block Diagram ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING UNITS VCC Single supply voltage 9 V TSTG Storage temperature range –65 to +150 °C Operating ambient temperature range SA615 –40 to +85 °C 90 75 117 °C/W TA θJA Thermal impedance D package N package SSOP package DC ELECTRICAL CHARACTERISTICS VCC = +6V, TA = 25°C; unless otherwise stated. LIMITS SYMBOL PARAMETER TEST CONDITIONS SA615 MIN VCC Power supply voltage range ICC DC current drain Mute switch input threshold 4.5 5.7 (ON) UNITS MAX 8.0 V 7.4 mA 1.7 (OFF) 1997 Nov 07 TYP V 1.0 3 V Philips Semiconductors Product specification High performance low power mixer FM IF system SA615 AC ELECTRICAL CHARACTERISTICS TA = 25°C; VCC = +6V, unless otherwise stated. RF frequency = 45MHz + 14.5dBV RF input step–up; IF frequency = 455kHz; R17 = 5.1k; RF level = –45dBm; FM modulation = 1kHz with +8kHz peak deviation. Audio output with C-message weighted filter and de-emphasis capacitor. Test circuit Figure 3. The parameters listed below are tested using automatic test equipment to assure consistent electrical characterristics. The limits do not represent the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the listed parameters. LIMITS SYMBOL PARAMETER TEST CONDITIONS SA615 MIN TYP UNITS MAX Mixer/Osc section (ext LO = 300mV) fIN fOSC Input signal frequency 500 MHz Crystal oscillator frequency 150 MHz Noise figure at 45MHz 5.0 dB -12 dBm 13 dB Third-order input intercept point f1 = 45.00; f2 = 45.06MHz Conversion power gain Matched 14.5dBV step-up 8.0 50Ω source RF input resistance Single-ended input 3.0 RF input capacitance -1.7 dB 4.7 kΩ 3.5 Mixer output resistance (Pin 20) IF amp gain Limiter gain 1.25 4.0 pF 1.50 kΩ 50Ω source 39.7 dB 50Ω source 62.5 dB Input limiting -3dB, R17 = 5.1k Test at Pin 18 -109 dBm AM rejection 80% AM 1kHz IF section Audio level, R10 = 100k 15nF de-emphasis Unmuted audio level, R11 = 100k 150pF de-emphasis SINAD sensitivity RF level -118dB 25 60 -30 33 150 43 dB 260 mVRM S 530 mV 12 dB -42 dB THD Total harmonic distortion S/N Signal-to-noise ratio No modulation for noise IF RSSI output, R9 = 100kΩ1 IF level = -118dBm 0 160 800 mV IF level = -68dBm 1.7 2.5 3.3 V IF level = -18dBm 3.6 4.8 5.8 RSSI range R9 = 100kΩ Pin 16 RSSI accuracy R9 = 100kΩ Pin 16 68 80 dB V dB +2 dB IF input impedance 1.40 1.6 kΩ IF output impedance 0.85 1.0 kΩ Limiter intput impedance 1.40 1.6 kΩ Unmuted audio output resistance 58 kΩ Muted audio output resistance 58 kΩ RF/IF section (int LO) Unmuted audio level 4.5V = VCC, RF level = -27dBm 450 mVRM System RSSI output 4.5V = VCC, RF level = -27dBm 4.3 V S NOTE: 1. The generator source impedance is 50Ω, but the SA615 input impedance at Pin 18 is 1500Ω. As a result, IF level refers to the actual signal that enters the SA615 input (Pin 8) which is about 21dB less than the ”available power” at the generator. 1997 Nov 07 4 Philips Semiconductors Product specification High performance low power mixer FM IF system network does not cause 12dB(v) insertion loss, a fixed or variable resistor can be added between the first IF output (Pin 16) and the interstage network. CIRCUIT DESCRIPTION The SA615 is an IF signal processing system suitable for second IF or single conversion systems with input frequency as high as 1GHz. The bandwidth of the IF amplifier is about 40MHz, with 39.7dB(v) of gain from a 50Ω source. The bandwidth of the limiter is about 28MHz with about 62.5dB(v) of gain from a 50Ω source. However, the gain/bandwidth distribution is optimized for 455kHz, 1.5kΩ source applications. The overall system is well-suited to battery operation as well as high performance and high quality products of all types. The signal from the second limiting amplifier goes to a Gilbert cell quadrature detector. One port of the Gilbert cell is internally driven by the IF. The other output of the IF is AC-coupled to a tuned quadrature network. This signal, which now has a 90° phase relationship to the internal signal, drives the other port of the multiplier cell. Overall, the IF section has a gain of 90dB. For operation at intermediate frequencies greater than 455kHz, special care must be given to layout, termination, and interstage loss to avoid instability. The input stage is a Gilbert cell mixer with oscillator. Typical mixer characteristics include a noise figure of 5dB, conversion gain of 13dB, and input third-order intercept of –10dBm. The oscillator will operate in excess of 1GHz in L/C tank configurations. Hartley or Colpitts circuits can be used up to 100MHz for xtal configurations. Butler oscillators are recommended for xtal configurations up to 150MHz. The demodulated output of the quadrature detector is available at two pins, one continuous and one with a mute switch. Signal attenuation with the mute activated is greater than 60dB. The mute input is very high impedance and is compatible with CMOS or TTL levels. The output of the mixer is internally loaded with a 1.5kΩ resistor permitting direct connection to a 455kHz ceramic filter. The input resistance of the limiting IF amplifiers is also 1.5kΩ. With most 455kHz ceramic filters and many crystal filters, no impedance matching network is necessary. To achieve optimum linearity of the log signal strength indicator, there must be a 12dB(v) insertion loss between the first and second IF stages. If the IF filter or interstage 1997 Nov 07 SA615 A log signal strength completes the circuitry. The output range is greater than 90dB and is temperature compensated. This log signal strength indicator exceeds the criteria for AMPs or TACs cellular telephone. NOTE: dB(v) = 20log VOUT/VIN 5 Philips Semiconductors Product specification High performance low power mixer FM IF system –25dB, –10dB, 1500/50Ω PAD 50/50Ω PAD –29dB, 929/50Ω PAD 2430 3880 SW8 19 18 SW7 16 15 C16 SW6 FLT2 17 1.3k C19 C21 C23 20 71.5 R17 5.1k C22 FLT1 51.7 32.8 C20 C24 –36dB, 156k/50Ω PAD 96.5 71.5 32.6 SW9 –10.6dB, 50/50Ω PAD 51.5 96.5 50.5 SA615 C15 SW5 C18 14 C17 13 12 11 IF AMP 700 LIMITER MIXER QUAD DETECTOR OSCILLATOR RSSI EMITTER 1 2 BASE 3 SW1 C1 MUTE SWITCH 4 SW3 5 SW4 6 7 C9 R9 C10 C11 8 R10 9 10 R11 C8 L1 C2 C7 R4 51.1 SW2 R1 C3 R3 R2 C12 C13 C5 IFT1 L2 X1 C6 C4 EXT. LOC OSC 44.545 C26 R7 30.5 45MHZ 45.06 MHZ R6 178 ”C” WEIGHTED AUDIO MEASUREMENT CIRCUIT R8 39.2 MUTE MINI–CIRCUIT ZSC2–1B VCC C14 RSSI AUDIO UNMUTED AUDIO OUTPUT Automatic Test Circuit Component List C1 C2 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14 C15 C17 C18 C21 C23 C25 C26 Flt 1 Flt 2 IFT 1 L1 L2 X1 R9 R17 R10 R11 47pF NPO Ceramic 180pF NPO Ceramic 100nF +10% Monolithic Ceramic 22pF NPO Ceramic 1nF Ceramic 10.0pF NPO Ceramic 100nF +10% Monolithic Ceramic 6.8µF Tantalum (minimum) * 100nF +10% Monolithic Ceramic 15nF +10% Ceramic 150pF +2% N1500 Ceramic 100nF +10% Monolithic Ceramic 10pF NPO Ceramic 100nF +10% Monolithic Ceramic 100nF +10% Monolithic Ceramic 100nF +10% Monolithic Ceramic 100nF +10% Monolithic Ceramic 100nF +10% Monolithic Ceramic 390pF +10% Monolithic Ceramic Ceramic Filter Murata SFG455A3 or equiv Ceramic Filter Murata SFG455A3 or equiv 455kHz 270µH TOKO #303LN-1129 300nH TOKO #5CB-1055Z 0.8µH TOKO 292CNS–T1038Z 44.545MHz Crystal ICM4712701 100k +1% 1/4W Metal Film 5.1k +5% 1/4W Carbon Composition 100k +1% 1/4W Metal Film (optional) 100k +1% 1/4W Metal Film (optional) *NOTE: This value can be reduced when a battery is the power source. SR00343 Figure 3. SA615 45MHz Test Circuit (Relays as shown) 1997 Nov 07 6 Philips Semiconductors Product specification High performance low power mixer FM IF system SA615 R17 5.1k C15 FLT1 20 19 FLT2 C21 C23 18 17 16 15 C18 14 C17 13 12 11 IF AMP 700 LIMITER MIXER QUAD DETECTOR OSCILLATOR RSSI 1 2 3 4 5 6 C1 MUTE SWITCH 7 C9 R9 C10 C11 8 R10 9 10 R11 C8 C2 L1 R5 C7 C12 C13 C5 IFT1 L2 45MHz INPUT X1 C6 C26 C25 C14 MUTE VCC RSSI AUDIO UNMUTED AUDIO OUTPUT NE/SA615N Application Component List C1 C2 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14 C15 C17 C18 47pF NPO Ceramic 180pF NPO Ceramic 100nF +10% Monolithic Ceramic 22pF NPO Ceramic 1nF Ceramic 10.0pF NPO Ceramic 100nF +10% Monolithic Ceramic 6.8µF Tantalum (minimum) * 100nF +10% Monolithic Ceramic 15nF +10% Ceramic 150pF +2% N1500 Ceramic 100nF +10% Monolithic Ceramic 10pF NPO Ceramic 100nF +10% Monolithic Ceramic 100nF +10% Monolithic Ceramic C21 C23 C25 C26 Flt 1 Flt 2 IFT 1 L1 L2 X1 R9 R17 R10 R11 100nF +10% Monolithic Ceramic 100nF +10% Monolithic Ceramic 100nF +10% Monolithic Ceramic 390pF +10% Monolithic Ceramic Ceramic Filter Murata SFG455A3 or equiv Ceramic Filter Murata SFG455A3 or equiv 455kHz 270µH TOKO #303LN-1129 300nH TOKO #5CB-1055Z 0.8µH TOKO 292CNS–T1038Z 44.545MHz Crystal ICM4712701 100k +1% 1/4W Metal Film 5.1k +5% 1/4W Carbon Composition 100k +1% 1/4W Metal Film (optional) 100k +1% 1/4W Metal Film (optional) *NOTE: This value can be reduced when a battery is the power source. SR00344 Figure 4. SA615 45MHz Application Circuit 1997 Nov 07 7 Philips Semiconductors Product specification High performance low power mixer FM IF system RF GENERATOR 45MHz SA615 SA615 DEM0–BOARD VCC (+6) RSSI AUDIO DATA C–MESSAGE DC VOLTMETER SCOPE HP339A DISTORTION ANALYZER SR00345 Figure 5. SA615 Application Circuit Test Set Up NOTES: 1. C-message: The C-message filter has a peak gain of 100 for accurate measurements. Without the gain, the measurements may be affected by the noise of the scope and HP339 analyzer. 2. Ceramic filters: The ceramic filters can be 30kHz SFG455A3s made by Murata which have 30kHz IF bandwidth (they come in blue), or 16kHz CFU455Ds, also made by Murata (they come in black). All of our specifications and testing are done with the more wideband filter. 3. RF generator: Set your RF generator at 45.000MHz, use a 1kHz modulation frequency and a 6kHz deviation if you use 16kHz filters, or 8kHz if you use 30kHz filters. 4. Sensitivity: The measured typical sensitivity for 12dB SINAD should be 0.22µV or –120dBm at the RF input. 5. Layout: The layout is very critical in the performance of the receiver. We highly recommend our demo board layout. 6. RSSI: The smallest RSSI voltage (i.e., when no RF input is present and the input is terminated) is a measure of the quality of the layout and design. If the lowest RSSI voltage is 250mV or higher, it means the receiver is in regenerative mode. In that case, the receiver sensitivity will be worse than expected. 7. Supply bypass and shielding: All of the inductors, the quad tank, and their shield must be grounded. A 10–15µF or higher value tantalum capacitor on the supply line is essential. A low frequency ESR screening test on this capacitor will ensure consistent good sensitivity in production. A 0.1µF bypass capacitor on the supply pin, and grounded near the 44.545MHz oscillator improves sensitivity by 2–3dB. 8. R5 can be used to bias the oscillator transistor at a higher current for operation above 45MHz. Recommended value is 22kΩ, but should not be below 10kΩ. 1997 Nov 07 8 Philips Semiconductors Product specification High performance low power mixer FM IF system SA615 20 RF = 45MHz IF = 455kHz VCC = 6V RELATIVE TO AUDIO OUTPUT (dB) AUDIO REF = 174mVRMS 0 5 –20 4 RSSI (Volts) THD NOISE –40 3 AM (80%) 2 –60 –80 –100 –130 1 NOISE RSSI (Volts) 0 –110 –90 –70 –50 –30 –10 10 RF INPUT LEVEL (dBm) SR00346 Figure 6. SA615 Application Board at 25°C 1997 Nov 07 9 Philips Semiconductors Product specification High performance low power mixer FM IF system DIP20: plastic dual in-line package; 20 leads (300 mil) 1997 Nov 07 10 SA615 SOT146-1 Philips Semiconductors Product specification High performance low power mixer FM IF system SO14: plastic small outline package; 14 leads; body width 3.9 mm 1997 Nov 07 11 SA615 SOT108-1 Philips Semiconductors Product specification High performance low power mixer FM IF system SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm 1997 Nov 07 12 SA615 SOT266-1 Philips Semiconductors Product specification High performance low power mixer FM IF system NOTES 1997 Nov 07 13 SA615 Philips Semiconductors Product specification High performance low power mixer FM IF system SA615 Data sheet status Data sheet status Product status Definition [1] Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make chages at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. [1] Please consult the most recently issued datasheet before initiating or completing a design. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Disclaimers Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Copyright Philips Electronics North America Corporation 1998 All rights reserved. Printed in U.S.A. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088–3409 Telephone 800-234-7381 Date of release: 05-98 Document order number: 1997 Nov 07 14 9397 750 03916