SB3317-G / SB3317-G(B) Semiconductor High Brightness LED Lamp Features • Colorless transparency lens type • φ3mm(T-1) all plastic mold type • Super luminosity Outline Dimensions unit : STRAIGHT TYPE mm STOPPER TYPE 3.0±0.2 3.0±0.2 5.3±0.2 5.3±0.2 2.9±0.2 2.9±0.2 5.2±0.5 0.4 23.0MIN 0.4 23.0MIN 1.0MIN 1.0MIN 2.54 NOM 2.54 NOM 1 2 3.6±0.2 1 2 3.6±0.2 3.8±0.2 3.8±0.2 PIN Connections 1.Anode 2.Cathode KLB-2002-001 1 SB3317-G / SB3317-G(B) Absolute maximum ratings Characteristic Symbol Ratings Unit Power Dissipation PD 80 mW Forward Current IF 20 mA IFP 50 mA Reverse Voltage VR 4 V Operating Temperature Topr -25∼85 ℃ Storage Temperature Tstg -30∼100 ℃ * Soldering Temperature Tsol 1 * Peak Forward Current 2 260℃ for 5 seconds *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of LED package Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit VF IF= 20mA - 3.4 4.0 V * Luminous Intensity IV IF= 20mA 520 1000 1760 mcd Peak Wavelength λP IF= 20mA - 468 - nm Δλ IF= 20mA - 26 - nm IR VR=4V - - 10 uA θ1/2 IF= 20mA - ±22 - deg Forward Voltage 4 Spectrum Bandwidth Reverse Current *3Half angle *3. θ1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity *4. Luminous Intensity Maximum tolerance for each Grade Classification limit is ±18% *4. Luminous Intensity classification P 520 ~ 780 Q 780 ~ 1170 R 1170 ~ 1760 KLB-2002-001 2 SB3317-G / SB3317-G(B) Characteristic Diagrams Fig. 2 IV - IF Forward Current IF [mA] Luminous Intensity Iv [mcd] Fig. 1 IF - VF Forward Voltage VF [V] Forward Current IF [mA] Fig.4 Spectrum Distribution Forward Relative Intensity [%] Current IF [mA] Fig. 3 IF – Ta Ambient Temperature Ta [℃] Wavelength λ [nm] Fig. 5 Radiation Diagram Relative Luminous Intensity Iv [%] KLB-2002-001 3