AUK SB3317-GB

SB3317-G / SB3317-G(B)
Semiconductor
High Brightness LED Lamp
Features
• Colorless transparency lens type
• φ3mm(T-1) all plastic mold type
• Super luminosity
Outline Dimensions
unit :
STRAIGHT TYPE
mm
STOPPER TYPE
3.0±0.2
3.0±0.2
5.3±0.2
5.3±0.2
2.9±0.2
2.9±0.2
5.2±0.5
0.4
23.0MIN
0.4
23.0MIN
1.0MIN
1.0MIN
2.54 NOM
2.54 NOM
1 2
3.6±0.2
1 2
3.6±0.2
3.8±0.2
3.8±0.2
PIN Connections
1.Anode
2.Cathode
KLB-2002-001
1
SB3317-G / SB3317-G(B)
Absolute maximum ratings
Characteristic
Symbol
Ratings
Unit
Power Dissipation
PD
80
mW
Forward Current
IF
20
mA
IFP
50
mA
Reverse Voltage
VR
4
V
Operating Temperature
Topr
-25∼85
℃
Storage Temperature
Tstg
-30∼100
℃
* Soldering Temperature
Tsol
1
* Peak Forward Current
2
260℃ for 5 seconds
*1.Duty ratio = 1/16, Pulse width = 0.1ms
*2.Keep the distance more than 2.0mm from PCB to the bottom of LED package
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
VF
IF= 20mA
-
3.4
4.0
V
* Luminous Intensity
IV
IF= 20mA
520
1000
1760
mcd
Peak Wavelength
λP
IF= 20mA
-
468
-
nm
Δλ
IF= 20mA
-
26
-
nm
IR
VR=4V
-
-
10
uA
θ1/2
IF= 20mA
-
±22
-
deg
Forward Voltage
4
Spectrum Bandwidth
Reverse Current
*3Half angle
*3. θ1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity
*4. Luminous Intensity Maximum tolerance for each Grade Classification limit is ±18%
*4. Luminous Intensity classification
P
520
~
780
Q
780
~
1170
R
1170
~
1760
KLB-2002-001
2
SB3317-G / SB3317-G(B)
Characteristic Diagrams
Fig. 2 IV - IF
Forward Current IF [mA]
Luminous Intensity Iv [mcd]
Fig. 1 IF - VF
Forward Voltage VF [V]
Forward
Current IF [mA]
Fig.4 Spectrum Distribution
Forward
Relative Intensity [%]
Current IF [mA]
Fig. 3 IF – Ta
Ambient Temperature Ta [℃]
Wavelength λ [nm]
Fig. 5 Radiation Diagram
Relative Luminous Intensity Iv [%]
KLB-2002-001
3