SB411D SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for low power rectification and switching power supply Features • Small surface mounting type. • High reliability. 3 2 1 SOT-23 Plastic Package Marking Marking Code: FE Absolute Maximum Ratings (Ta = 25OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 40 V DC Reverse Voltage VR 20 V Mean Rectifying Current Io 0.5 A IFSM 3 A Junction Temperature Tj 125 O Storage Temperature Range Ts -40 to +125 O Peak Forward Surge Current 1) 1) C C 60Hz for 1 Characteristics at Ta = 25 OC Parameter Symbol Min Typ Max Unit VF - - 0.3 V - - 0.5 IR - - 30 µA CT - 20 - pF Forward Voltage at IF = 10mA at IF = 500mA Reverse Current at VR =10V Capacitance Between Terminals at VR =10V, f=1MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 21/10/2005 SB411D SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 21/10/2005