SB425D Silicon Epitaxial Planar Schottky Barrier Diode Low current rectification 3 1 2 Marking Code: "YA" SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VRM 40 V VR 40 V IF(AV) 100 mA IFSM 1 A Tj 125 O Tstg - 55 to + 125 O Repetitive Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current 1) Peak Forward Surge Current (60 Hz 1 Cycle) 1) Junction Temperature Storage Temperature Range 1) C C Rating of per diode Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA at IF = 100 mA Reverse Current at VR = 10 V Capacitance between Terminals at VR = 10 V, f = 1 MHz Symbol Typ. Max. Unit VF - 0.34 0.55 V IR - 30 µA Ct 6 - pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 04/08/2007