SD1650 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS .. .. . REFRACTORY/GOLD METALLIZATION DOUBLE STEP INPUT/OUTPUT MATCH 850-960 MHz CLASS AB LINEAR COMMON EMITTER P OUT = 60 W MIN. WITH 7 dB MIN GAIN .400 6LFL (M169) epoxy sealed ORDER CODE SD1650 BRANDING SCELL500 PIN CONNECTION DESCRIPTION Designed for 900 MHz cellular radio base station applications, the SD1650 exhibits high collector efficiency with excellent thermal characteristics. Double-section internal input/output matching result in terminal impedance levels easily handled by the circuit designer. 1. Collector 2. Base 3. Emitter ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 28 V VEBO Emitter-Base Voltage 4.0 V Device Current 10 A Power Dissipation (+25°C) 175 W IC PDISS TJ Junction Temperature +200 °C T STG Storage Temperature − 65 to +150 °C 1.5 °C/W THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance *Applies only to rated RF amplifier operation August 1992 1/5 SD1650 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Valu e Test Conditions Min. Typ. Max. Unit BVCBO IC = 50mA 60 — — V BVEBO IE = 20mA 3.0 — — V BVCES IC = 100mA 60 — — V BVCEO IC = 100mA 28 — — V I CEO VCE = 24V — — 10 mA hFE VCE = 5V 20 — 200 — IC = 6A DYNAMIC Symbol Valu e Test Conditions Min. Typ. Max. Unit POUT ηc f = 900 MHz PIN = 12 W ICQ = 300 mA 60 — — W f = 900 MHz PIN = 12 W ICQ = 300 mA 45 — — % GP f = 900 MHz PIN = 12 W ICQ = 300 mA 7 — — dB VSWR f = 900 MHz PIN = 12 W 3:1 — — — 2/5 SD1650 TYPICAL PERFORMANCE INPUT BROADBANDvs POWER POWER OUTPUT vs POWER INPUT vs FREQUENCY BROADBAND POWER OUTPUT vs FREQUENCY 90 100 850 MHz P 80 P 900 MHz O W O E E R R 60 80 960 MHz O U O U 50 T T P U 90 W 70 70 U T T 30 60 W W A T A 20 T T S PIN = 12 Watts ICQ = 300 mA P 40 50 T 10 S 0 40 0 1 2 3 4 5 6 7 8 9 10 11 12 13 825 850 875 POWER INPUT (WATTS) 900 925 950 975 1000 FREQUENCY (MHz) vs FREQUENCY BROADBAND EFFICIENCY vs FREQUENCY vs FREQUENCY BROADBAND POWER GAIN vs FREQUENCY 10 60 9.5 55 P E O W F 9 F E R G 50 I C 8.5 I POUT = 60 Watts ICQ = 300 mA A I 45 POUT = 60 Watts ICQ = 300 mA E N C N Y 8 d 40 % B 7.5 35 7 30 825 850 875 900 925 FREQUENCY (MHz) 950 975 1000 825 850 875 900 925 950 975 1000 FREQUENCY (MHz) 3/5 SD1650 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN 850 MHz ZIN (Ω) 2.4 + j 5.2 ZCL (Ω) 4.0 − j 1.3 870 MHz 2.6 + j 5.4 3.9 − j 2.3 900 MHz 3.2 + j 6.3 3.6 − j 2.6 930 MHz 4.1 + j 6.0 3.4 − j 2.4 960 MHz 4.7 + j 5.6 3.0 − j 3.0 FREQ. TYPICAL COLLECTOR LOAD IMPEDANCE ZCL TEST CIRCUIT C1,C2 C3 C4,C5 C6,C7 D1,D2 4/5 : : : : : 220 pF Chip Capacitor ATC Size B 10 Microfarad Electrolytic Capacitor 220 pF Chip Capacitor ATC Size B 1 - 4 pF Johanson Variable Capacitor 1N3064 Diode or Equiv L1,L2 : Q1 : R1 : R2 : Er =10.2 5 Turn 1/4” Dia. 16 AWG Coil SD1438-02 or Equiv. 5KΩ Potentiometer 100Ω 1/4 Watt Resistor H = .025in. SD1650 PACKAGE MECHANICAL DATA Ref. Dwg. No.: 12-0169 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5