STMICROELECTRONICS SD1565

SD1565
RF & MICROWAVE TRANSISTORS
UHF PULSED APPLICATIONS
.
..
.
.
.
500 WATTS @ 250µSec PULSE WIDTH,
10% DUTY CYCLE
REFRACTORY GOLD METALLIZATION
EMITTER BALLASTING AND LOW
RESISTANCE FOR RELIABILITY AND
RUGGEDNESS
INFINITE VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
INPUT MATCHED, COMMON BASE
CONFIGURATION
BALANCED CONFIGURATION
.400 x .500 4LFL (M102)
hermetically sealed
ORDER CODE
SD1565
BRANDING
SD1565
PIN CONNECTION
DESCRIPTION
The SD1565 is a hermetically sealed, gold metallized silicon NPN pulse power transistor mounted
in a common base balanced configuration. The
SD1565 is designed for applications requiring high
peak power and low duty cycles within the frequency range of 400 - 500 MHz.
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
65
V
VCES
Collector-Emitter Voltage
65
V
VEBO
Emitter-Base Voltage
3.5
V
Device Current
43.2
A
Power Dissipation
1167
W
TJ
Junction Temperature
+200
°C
T STG
Storage Temperature
− 65 to +200
°C
0.15
°C/W
IC
PDISS
THERMAL DATA
RTH(j-c)
July 19, 1994
Junction-Case Thermal Resistance
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SD1565
ELECTRICAL SPECIFICATIONS (T case = 25 ° C)
STATIC
Symbol
Value
Test Conditions
Min.
Typ.
Max.
Unit
BVCBO
I C = 50 mA
IE = 0 mA
65
—
—
V
BVCES
I C = 50 mA
VBE = 0 V
65
—
—
V
BVEBO
I E = 10 mA
IC = 0 mA
3.5
—
—
V
ICES
VCE = 30 V
IE = 0 mA
—
—
15
mA
hFE
VCE = 5 V
IC = 5 A
20
—
200
—
DYNAMIC
Symbol
Value
Test Conditions
Min.
Typ.
Max.
POUT
f = 425 MHz
PIN = 54 W
VCE = 40 V
500
—
—
W
PG
ηc
f = 425 MHz
PIN = 54 W
VCE = 40 V
9.7
—
—
dB
f = 425 MHz
PIN = 54 W
VCE = 40 V
50
—
—
%
Note:
Pulse W idth = 250 µ Sec, Dut y Cycle = 10%
This device i s sui table f or use under other pulse widt h/duty cycle condit ions.
Please contact the fact ory for specific appli cat ions assi stance.
TYPICAL PERFORMANCE (P.W. = 250µS, D.C. = 10%)
POWER OUTPUT vs POWER INPUT
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Unit
POWER GAIN vs FREQUENCY
SD1565
TYPICAL PERFORMANCE (P.W. = 250µS, D.C. = 10%)
EFFICIENCY vs POWER INPUT
EFFICIENCY vs FREQUENCY
IMPEDANCE DATA (P.W. = 250µS, D.C. = 10%)
TYPICAL INPUT IMPEDANCE
TYPICAL COLLECTOR LOAD
IMPEDANCE
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SD1565
TYPICAL PERFORMANCE (P.W. = 60µS, D.C. = 2%)
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POWER OUTPUT vs POWER INPUT
POWER GAIN vs FREQUENCY
EFFICIENCY vs POWER INPUT
EFFICIENCY vs FREQUENCY
SD1565
IMPEDANCE DATA (P.W. = 60µS, D.C. = 2%)
TYPICAL COLLECTOR LOAD
IMPEDANCE
TYPICAL INPUT IMPEDANCE
TEST CIRCUIT
C3, C5
C4, C8
C6
C7
C9
C10
C12, C15
C13, C16
C14, C17
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:
:
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8pF 50 mil square
.4 - 4.5pF Johanson JMC #27273
39pF 50mil square
39pF Chip Capacitor
20pF Chip Capacitor
12pF Chip Capacitor
.1µF
1000pF Chip Capacitor
1000µF
L1, L2 : 1” PC #18 Tinned Wire (mounted flat to PC Board)
L3, L4 : 2T #18 Tinned Wire, 0.25” I.D.
Baluns are 4.8” UT-141 Coax, Spaced to fit from coax
connectors to the 25 Ohm lines.
Note:
3M Epsilom 6 PC Board .030” Thick
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SD1565
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0102 rev. F
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibili ty
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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