SD1565 RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS . .. . . . 500 WATTS @ 250µSec PULSE WIDTH, 10% DUTY CYCLE REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW RESISTANCE FOR RELIABILITY AND RUGGEDNESS INFINITE VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INPUT MATCHED, COMMON BASE CONFIGURATION BALANCED CONFIGURATION .400 x .500 4LFL (M102) hermetically sealed ORDER CODE SD1565 BRANDING SD1565 PIN CONNECTION DESCRIPTION The SD1565 is a hermetically sealed, gold metallized silicon NPN pulse power transistor mounted in a common base balanced configuration. The SD1565 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 - 500 MHz. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 65 V VCES Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 3.5 V Device Current 43.2 A Power Dissipation 1167 W TJ Junction Temperature +200 °C T STG Storage Temperature − 65 to +200 °C 0.15 °C/W IC PDISS THERMAL DATA RTH(j-c) July 19, 1994 Junction-Case Thermal Resistance 1/6 SD1565 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO I C = 50 mA IE = 0 mA 65 — — V BVCES I C = 50 mA VBE = 0 V 65 — — V BVEBO I E = 10 mA IC = 0 mA 3.5 — — V ICES VCE = 30 V IE = 0 mA — — 15 mA hFE VCE = 5 V IC = 5 A 20 — 200 — DYNAMIC Symbol Value Test Conditions Min. Typ. Max. POUT f = 425 MHz PIN = 54 W VCE = 40 V 500 — — W PG ηc f = 425 MHz PIN = 54 W VCE = 40 V 9.7 — — dB f = 425 MHz PIN = 54 W VCE = 40 V 50 — — % Note: Pulse W idth = 250 µ Sec, Dut y Cycle = 10% This device i s sui table f or use under other pulse widt h/duty cycle condit ions. Please contact the fact ory for specific appli cat ions assi stance. TYPICAL PERFORMANCE (P.W. = 250µS, D.C. = 10%) POWER OUTPUT vs POWER INPUT 2/6 Unit POWER GAIN vs FREQUENCY SD1565 TYPICAL PERFORMANCE (P.W. = 250µS, D.C. = 10%) EFFICIENCY vs POWER INPUT EFFICIENCY vs FREQUENCY IMPEDANCE DATA (P.W. = 250µS, D.C. = 10%) TYPICAL INPUT IMPEDANCE TYPICAL COLLECTOR LOAD IMPEDANCE 3/6 SD1565 TYPICAL PERFORMANCE (P.W. = 60µS, D.C. = 2%) 4/6 POWER OUTPUT vs POWER INPUT POWER GAIN vs FREQUENCY EFFICIENCY vs POWER INPUT EFFICIENCY vs FREQUENCY SD1565 IMPEDANCE DATA (P.W. = 60µS, D.C. = 2%) TYPICAL COLLECTOR LOAD IMPEDANCE TYPICAL INPUT IMPEDANCE TEST CIRCUIT C3, C5 C4, C8 C6 C7 C9 C10 C12, C15 C13, C16 C14, C17 : : : : : : : : : 8pF 50 mil square .4 - 4.5pF Johanson JMC #27273 39pF 50mil square 39pF Chip Capacitor 20pF Chip Capacitor 12pF Chip Capacitor .1µF 1000pF Chip Capacitor 1000µF L1, L2 : 1” PC #18 Tinned Wire (mounted flat to PC Board) L3, L4 : 2T #18 Tinned Wire, 0.25” I.D. Baluns are 4.8” UT-141 Coax, Spaced to fit from coax connectors to the 25 Ohm lines. Note: 3M Epsilom 6 PC Board .030” Thick 5/6 SD1565 PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0102 rev. F Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibili ty for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 6/6