SD1542 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . .. .. . . . DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS 600 WATTS (typ.) IFF 1030/1090 MHz 550 WATTS (min.) DME 1025 - 1150 MHz 5.6 dB MIN. GAIN REFRACTORY GOLD METALLIZATION BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS 30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INTERNAL INPUT/OUTPUT MATCHED, COMMON BASE CONFIGURATION .400 x .500 2LFL (M112) hermetically sealed ORDER CODE SD1542 BRANDING SD1542 PIN CONNECTION DESCRIPTION The SD1542 is a hermetically sealed, gold metallized, silicon NPN power transistor. The SD1542 is designed for applications requiring high peak power and low duty cycles such as IFF and DME. The SD1542 is packaged in a hermetic metal/ceramic package with internal input/output matching, resulting in improved broadband performance and a low thermal resistance. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 65 V VCES Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 3.5 V Device Current 40 A Power Dissipation 1350 W TJ Junction Temperature +200 °C TSTG Storage Temperature − 65 to +200 °C 0.06 °C/W IC PDISS THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 1/4 SD1542 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO IC = 25mA IE = 0mA 65 — — V BVCES IC = 50mA VBE = 0V 65 — — V BVEBO IE = 10mA IC = 0mA 3.5 — — V ICES VCE = 50V IE = 0mA — — 35 mA hFE VCE = 5V IC = .25A 5 — 200 — DYNAMIC Symbol Value Test Conditions Min. Typ. Max. POUT f = 1025 — 1150MHz PIN = 150 W VCE = 50 V 550 — — W GP f = 1025 — 1150MHz PIN = 150 W VCE = 50 V 5.6 — — dB Note: Pulse Width = 10 µSec, Duty Cycle = 1% IMPEDANCE DATA TYPICAL COLLECTOR LOAD IMPEDANCE TYPICAL INPUT IMPEDANCE 1020 MHz ZIN (Ω) 1.78 + j 3.0 ZCL (Ω) 1.33 − j 2.7 1090 MHz 1.57 + j 2.1 1.64 − j 3.4 1150 MHz 1.55 + j 1.4 1.93 − j 4.0 FREQ. PIN = 150 W VCE = 50 V 2/4 Unit SD1542 TEST CIRCUIT All Dimensions are in inches Unless Otherwise Specified C1 : C2, C3, C4 : C5 : C6 : C7 : L1 L2 0.4 - 2.5pF Johanson Gigatrim 0.6 - 4.5pF Johanson Gigatrim 82pF Chip Capacitor, .055 Sq. Pair of 820pF Chip Capacitors, .11 Sq. 1000µF Electrolytic : Loop, #18 Tinned, .36 Wide x .27 Above Circuit : 4 3/4 Turns, #24 Enameled, Close Wound, .075 I.D. Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 : : : : : : : : : 50Ω (.02 Wide) .250 x .120 50Ω, .020 x .330; C1 Tapped .15 From Load .145 x .920 .325 x .180 .730 x .315 .710 x .425 with .140 x .150 Cutout .035 x .780; C4 Tapped .36 from Center 50Ω (.02 Wide) C1, C4 : Cold End Terminated Through Eyelet PC BOARD LAYOUT 3/4 SD1542 PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0112 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4