SD2932
RF POWER TRANSISTORS
HF/VHF/UHF N-CHANNEL MOSFETs
• GOLD METALLIZATION
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION,
PUSH PULL
• POUT = 300 W MIN. WITH 15 dB GAIN @
175 MHz
M244
epoxy sealed
DESCRIPTION
The SD2932 is a gold metallized N-Channel MOS
field-effect RF power transistor. The SD2932 it is
intended for use in 50 V dc large signal
applications up 250 MHz.
PIN CONNECTION
1
1
3
3
2
2
1. Drain
2. Gate
3. Source
ORDER CODES
Order Codes
Marking
Package
Packaging
SD2932
SD2932
M244
Plastic Tray
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)
Symbol
V(BR)DSS
VDGR
VGS
ID
PDISS
Tj
TSTG
Parameter
Value
Unit
Drain Source Voltage
125
V
Drain-Gate Voltage (RGS = 1MΩ)
125
V
Gate-Source Volatge
±20
V
Drain Current
40
A
Power Dissipation
500
W
Max. Operating Junction Temperature
+200
°C
-65 to +150
°C
0.35
°C/W
Storage Temperature
THERMAL DATA
Rth(j-c)
Junction -Case Thermal Resistance
REV. 5
July 2004
1/12
SD2932
ELECTRICAL SPECIFICATION (TCASE = 25°C)
STATIC (Per Section)
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
VGS = 0 V
IDS = 100 mA
IDSS
VGS = 0 V
VDS = 50 V
50
µA
IGSS
VGS = 20 V
VDS = 0 V
250
nA
VGS(Q)
VDS = 10 V
ID = 250 mA
4
V
VDS(ON)
VGS = 10 V
ID = 10 A
3
V
125
V
1.5
GFS
VDS = 10 V
ID = 5 A
CISS
VGS = 0 V
VDS = 50 V
f = 1 MHz
480
pF
COSS
VGS = 0 V
VDS = 50 V
f = 1 MHz
190
pF
CRSS
VGS = 0 V
VDS = 50 V
f = 1 MHz
18
pF
5
mho
DYNAMIC
Symbol
Test Conditions
Min.
Unit
IDQ = 500 mA
GPS
VDD = 50 V
IDQ = 500 mA POUT = 300 W
f = 175 MHz
15
16
dB
ηD
VDD = 50 V
IDQ = 500 mA POUT = 300 W
f = 175 MHz
50
60
%
VDD = 50 V IDQ = 500 mA POUT = 300 W
All Phase Angles
f = 175 MHz
300
5:1
IMPEDANCE DATA
D
ZDL
Typical Input
Impedance
Typical Drain
Load Impedance
G
Zin
S
FREQ
ZIN (Ω)
ZDL (Ω)
175 MHz
0.92 - j 0.14
3.17 + j 4.34
Measured Gate to Gate and Drain to Drain, respectively.
2/12
Max.
VDD = 50 V
Load
Mismatch
f = 175 MHz
Typ.
POUT
W
VSWR
SD2932
TYPICAL PERFORMANCE
Maximum Thermal Resistance vs. Case Temperature
Safe Operating Area
100
Ids, DRAIN CURRENT (A)
Rth(j-c) (ºC/W)
0.42
0.4
0.38
0.36
(1)
10
0.34
25
30
35
40
45
50
55
60
65
70
75
80
1
85
1
Tc, CASE TEMPERATURE (°C)
10
100
1000
Vds, DRAIN SOURCE VOLTAGE (V)
(1) Current in this area may be limited by Rds(on)
Two sides, each section equally loaded
Capacitance vs. Drain-Source Voltage
Drain Current vs. Gate Voltage
20
1000
ID, DRAIN CURRENT (A)
C, CAPACITANCE (pF)
10000
Ciss
Coss
100
Crss
10
T=-20 °C
Vds=10 V
T=+25 °C
15
T=+80 °C
10
5
0
0
10
20
30
40
50
VDS, DRAIN-SOURCE VOLTAGE (V)
2
2.5
3
3.5
4
4.5
5
5.5
6
VGS, GATE-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
Gate Voltage vs. Case Temperature
1.15
1.1
Id=5 A
Id=9 A
Id=10 A
Id=7 A
1.05
Id=11 A
1
0.95
Id=4 A
0.9
Id=1 A
Id=2 A
Id=.1 A
0.85
Id=.25 A
0.8
-25
0
25
50
75
100
Tcase, CASE TEMPERATURE (°C)
3/12
SD2932
TYPICAL PERFORMANCE (175 MHz)
Output Power vs. Input Power
Output Power vs. Input Power
600
500
Pout, OUTPUT POWER (W)
Pout, OUTPUT POWER (W)
600
Vdd=50 V
400
Vdd=40 V
300
200
Vdd=50V
Idq=2 x 250mA
F=175Mhz
100
T=-20 °C
500
T=+25 °C
400
T=+80 °C
300
200
Vdd=50V
Idq=2 x 250mA
F=175Mhz
100
0
0
0
2
4
6
8
10
12
14
16
18
20
0
22
2
4
6
18
80
17
70
16
15
14
13
Vdd=50V
Idq=2 x 250mA
F=175Mhz
12
11
12
14
16
18
20
22
60
50
40
30
Vdd=50V
Idq=2 x 250mA
F=175Mhz
20
10
10
0
100
200
300
400
500
0
100
Pout, OUTPUT POWER (W)
200
300
400
500
Pout, OUTPUT POWER (W)
Output Power vs. Gate Voltage
Output Power vs. Supply Voltage
400
Idq=2 x 250mA
F=175Mhz
400
Pout, OUTPUT POWER (W)
450
Pout,OUTPUT POWER (W)
10
Efficiency vs. Output Power
Nc, EFFICIENCY (%)
Gp, POWER GAIN (dB)
Power Gain vs. Output Power
Pin=15.6 W
350
300
Pin=7.8 W
250
200
Pin=3.9 W
150
T=+25 °C
300
T=-20 °C
T=+80 °C
200
100
Vdd=50V
Idq=2 x 250mA
F=175Mhz
0
100
24
26
28
30
32
34
36
38
40
42
Vdd,DRAIN VOLTAGE (V)
4/12
8
Pin, INPUT POWER(W)
Pin, INPUT POWER (W)
44
46
48
50
-3
-2
-1
0
1
VGS, GATE_SOURCE VOLTAGE (V)
2
3
SD2932
175 MHz Test Circuit Schematic (Production Test Circuit)
NOTES:
1. DIMENSION AT COMPONENT SYMBOL ARE REFERENCE FOR COMPONENT PLACEMENT.
2. GAP BETWEEN GROUND & TRANSMISSION LINES IS + 0.002{0.05} - O.OOO[0.00] TYP
REF. 1022256B
175 MHz Test Circuit Component Part List
R1,R2,R5,R6
R3,R4
R7,R8
R9,R10
C1,C4
C2,C3,C7,C8,C17,C19,C20,C21
C5
C6
C9,C10
C11,C12, C13
C14,C15,C24,C25
C16,C18
C22,C23
C26,C27
C28
B1
B2
T1
T2
L1
FB1,FB5
FB2,FB6
FB3
FB4
PCB
470 Ohm 1 W, Surface Mount Chip Resistor
360 Ohm 0.5 W, Carbon Comp. Axial Lead Resistor or Equivalent
560 Ohm 2 W, Resistor Two Turn Wire Air-Wound Axial Lead Resistor
20 K Ohm 3.09 W, 10 Turn Wirewound Precision Potentiometer
680 pF ATC 130B Surface Mount Ceramic Chip Capacitor
10000 pF ATC 200B Surface Mount Ceramic Chip Capacitor
75 pF ATC 100B Surface Mount Ceramic Chip Capacitor
ST40 25 pF - 115 pF Miniature variable Trimmer
47 pF ATC 100B Surface Mount Ceramic Chip Capacitor
43 pF ATC 100B Surface Mount Ceramic Chip Capacitor
1200 pF ATC 700B Surface Mount Ceramic Chip Capacitor
470 pF ATC 700B Surface Mount Ceramic Chip Capacitor
0.1 µF / 500 V Surface Mount Ceramic Chip Capacitor
0.01 µF / 500 V Surface Mount Ceramic Chip Capacitor
10 µF / 63 Aluminum Eletrolytic Axial Lead Capacitor
50 Ohm RG316 O.D 0.076[1.93] L = 11.80[299.72] Flexible Coaxial Cable 4 Turns
thru Fair-rite Bead
50 Ohm RG-142B O.D 0.165[4.19] L = 11.80[299.72] Flexible Coaxial Cable
R.F. Transformer 4:1, 25 Ohm O.D RG316-25 O.D 0.080[2.03] L = 5.90[149.86]
Flexible Coaxial Cable 2 Turns thru Fair-rite Multi-Aperture Core
R.F. Transformer 1:4, 25 Ohm Semi-rigid Coaxial Cable O.D. 0.141[3.58] L =
5.90[149.86]
Inductor λ 1/4 Wave 50 Ohm O.D 0.165[4.19] L = 11.80 [299.72] Flexible Coaxial
Cable 2 Turns thru Fair-rite Bead
Shield Bead
Multi-aperture Core
Multilayer Ferrite Chip Bead (Surface Mount)
Surface Mount Emi Shield Bead
Woven Glass Reinforced PTFE Microwave Laminate 0.06”, 1 oz EDCu, Both sides,
εr = 2.55
5/12
SD2932
4 inches
175 MHz Test Circuit Photomaster
8.50 inches
175 MHz Test Fixture
6/12
SD2932
TYPICAL BROADBAND DATA (175 - 230 MHz)
Input Power vs. Frequency
Power Gain vs. Frequency
18
Gp , POWER GAIN (dB)
Pin , INPUT POWER (W)
12
10
8
6
Vdd = 50V
Idq = 300 mA
Pout = 250W
4
2
160
170
180
190
200
210
220
230
240
FREQUENCY (MHz)
16
15
14
13
11
10
160
170
180
190
200
210
220
230
240
Return Loss vs. Frequency
80
0
70
RTL , RETURN LOSS (dB)
Vdd = 50V
Idq = 300 mA
Pout = 250W
75
65
60
55
50
45
160
Vdd = 50V
Idq = 300 mA
Pout = 250W
12
FREQUENCY (MHz)
Efficiency vs. Frequency
Nd , DRAIN EFFICIENCY (%)
17
170
180
190
200
210
220
230
240
FREQUENCY (MHz)
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
160
Vdd = 50V
Idq = 300 mA
Pout = 250W
170
180
190
200
210
220
230
240
FREQUENCY (MHz)
P1dB , 1dB COMPRESSION (W)
1 dB Compression Point vs. Frequency
350
325
300
275
250
160
Vdd = 50V
Idq = 300 mA
170
180
190
200
210
220
230
240
FREQUENCY (MHz)
7/12
SD2932
175 - 230 MHz Test Circuit Layout (Engineering Fixture)
175 - 230 MHz Circuit Layout Component Part List
PCB
T1
T2,T3
T4,T5
C1
C2,C3
C4
C5
C6,C11
C7
C8,C9,C13
C10
C12
C14
R1,R3
R2
R4
R5
R6
D1
L1
L2
L3
L4
L5
8/12
1/32” Woven Fiberglass 0.030 Cu, sides, εr = 4.8
50 Ohm Flexible Coax Cable OD 0.06”, 3” Long. Ferrite Core NEOSIDE
9:1Transformer, 16.5 Ohm Flexible Coax Cable 0.1”, 3” Long
4:1 Transformer, 25 Ohm Flexible Coax Cable OD 0.06”, 5” Long
8.2 pF Ceramic Cap
100 pF Ceramic Cap
2 - 18 pF Chip Cap
47 pF Ceramic Cap
47 nF Ceramic CAp
56 pF ATC Chip Cap
470 pF ATC Chip Cap
100 nF Ceramic Cap
2 x 330 nF / 50 V Cap
10 nF / 63 V Electrolityc Cap
47 Ohm Resistor
6.8 K Ohm Chip Resistor
4.7 K Ohm Multi Turns Trim Resistor
8.2 K Ohm / 5 W Resistor
3.3 K Ohm / 5 W Resistor
6.8 V Zener Diode
20 nH Inductor
70 nH Inductor
30 nH Inductor
10 nH Inductor
15 nH Inductor
SD2932
TYPICAL BROADBAND DATA (88 -108 MHz)
Input Power vs. Frequency
Power Gain vs. Frequency
22
Gp , POWER GAIN (dB)
Pin , INPUT POWER (W)
4
Vdd = 50V
Idq = 200 mA
Pout = 300W
3.5
3
2.5
21
20
19
Vdd = 50V
Idq = 200 mA
Pout = 300W
18
17
16
85
90
95
100
105
110
85
90
FREQUENCY (MHz)
80
0
78
-2
76
74
72
70
68
Vdd = 50V
Idq = 200 mA
Pout = 300W
66
64
62
60
90
95
100
105
Vdd = 50V
Idq = 200 mA
Pout = 300W
-6
-8
-10
-12
-14
-16
-18
85
90
100
100
105
110
3rd Harmonic vs. Frequency (88 - 108 MHz
Vdd = 50V
Idq = 200 mA
Pout = 300W
FREQUENCY (MHz)
95
FREQUENCY (MHz)
H3 , 3rd HARMONIC (dBc)
H2 , 2nd HARMONIC (dBc)
-10
-12
-14
-16
-18
-20
-22
-24
-26
-28
-30
-32
-34
-36
95
110
-20
110
2nd Harmonic vs. Frequency (88 - 108 MHz)
90
105
-4
FREQUENCY (MHz)
85
100
Return Loss vs. Frequency
RTL , RETURN LOSS (dB)
Nd , EFFICIENCY (%)
Efficiency vs. Frequency
85
95
FREQUENCY (MHz)
105
110
-10
-12
-14
-16
-18
-20
-22
-24
-26
-28
-30
-32
-34
-36
Vdd = 50V
Idq = 200 mA
Pout = 300W
85
90
95
100
105
110
FREQUENCY (MHz)
9/12
SD2932
88 - 108 MHz Test Circuit Layout (Engineering Fixture)
88 - 108 MHz Circuit Layout Component Part List
PCB
T1
T2,T3
T4,T5
T6
FB1
C1
C2,C3,C4,C7,C8
C5,C6
C9
C10
C11
R1
R2,R4
R3
R5
R6
R7
R8
D1
L1
L2
L3
10/12
1/32” Woven FiberGlass 0.030 Cu, 2 sides, εr = 4.8
50 Ohm Flexible Coax Cable OD 0.06”, 5” Long
9:1 Transformer, 25 Ohm Flexible Coax Cable OD 0.1”, 3.9”. Ferrite Core NEOSIDE
4:1 Transformer, 25 Ohm Flexible Coax Cable OD 0.1”, 5” Long
50 Ohm Flexible Coax Cable OD 0.1”, 5” Long
vk200
10 pF Ceramic Cap
1 nF Chip Cap
1 nF ATC Chip Cap
470 pF ATC Chip Cap
100 nF Chip Cap
100 mF / 63 V Electrolityc Cap
56 Ohm Resistor
10 Ohm Chip Resistor
10 K Ohm Resistor
5.6 Ohm Resistor
10 K Ohm, 10 Turn Trim Resistor
3.3 K Ohm / 5 W Resistor
15 Ohm / 5 W Resistor
6.6 V Zener Diode
10 nH Inductor
40 nH Inductor
70 nH Inductor
SD2932
M244 (.400 x .860 4/L BAL N/HERM W/FLG) MECHANICAL DATA
mm
DIM.
A
MIN.
TYP.
5.59
B
Inch
MAX
MIN.
5.84
0.220
5.08
TYP.
MAX
0.230
0.200
C
3.02
3.28
0.119
0.129
D
9.65
9.91
0.380
0.390
E
19.81
20.82
0.780
0.820
F
10.92
11.18
0.430
0.440
G
27.94
1.100
H
33.91
34.16
1.335
1.345
I
0.10
0.15
0.004
0.006
J
1.52
1.78
0.060
0.070
K
2.59
2.84
0.102
0.112
L
4.83
5.84
0.190
0.230
M
10.03
10.34
0.395
0.407
N
21.59
22.10
0.850
0.870
Controlling Dimension: Inches
1020876B
11/12
SD2932
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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