SEMD6 NPN/PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit 4 • Two (galvanic) internal isolated NPN/PNP 5 3 Transistors in one package 6 2 • Built in bias resistor (R1=4.7kΩ) 1 Tape loading orientation Top View 3 2 1 WR 4 5 6 Marking on SOT666 package (for example W R) corresponds to pin 1 of device C1 B2 E2 6 5 4 R1 R1 Position in tape: pin 1 same of feed hole side Direction of Unreeling TR2 TR1 1 2 3 E1 B1 C2 EHA07290 Type SEMD6 Marking W2 Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10 Input on Voltage Vi(on) 15 DC collector current IC 100 mA Total power dissipation, TS = 75 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg V -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS ≤ 300 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-26-2004 SEMD6 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 50 - - V(BR)CBO 50 - - V(BR)EBO 10 - - ICBO - - 100 nA hFE 120 - 630 - - - 0.3 V Vi(off) 0.4 - 0.8 Vi(on) 0.5 - 1.1 R1 3.2 4.7 6.2 fT - 150 - MHz Ccb - 3 - pF DC Characteristics Collector-emitter breakdown voltage V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 DC current gain 1) IC = 5 mA, VCE = 5 V VCEsat Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor kΩ AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300µs; D < 2% 2 Feb-26-2004 SEMD6 NPN Type DC Current Gain hFE = f (I C) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) VCEsat = f (IC), hFE = 20 10 3 10 2 mA 10 2 IC hFE 10 1 10 1 10 0 10 0 10 -1 -1 10 10 0 10 1 mA 10 10 2 -1 0 0.1 0.2 V 0.3 IC 0.5 VCEsat Input on Voltage Vi(on) = f (IC ) Input off voltage Vi(off) = f (IC ) VCE = 0.3V (common emitter configuration) VCE = 5V (common emitter configuration) 10 2 10 2 mA mA 10 1 IE IE 10 1 10 0 10 -1 10 -2 10 -3 10 0 10 -1 -1 10 10 0 10 1 V 10 2 Vi(on) 0 1 2 3 V 5 Vi(off) 3 Feb-26-2004 SEMD6 PNP Type DC Current Gain hFE = f (I C) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) VCEsat = f (IC), hFE = 20 10 3 10 2 mA 10 2 10 1 IC hFE - 10 1 10 0 -1 10 10 0 10 0 10 1 mA 10 10 2 -1 0 0.1 0.2 0.3 V 0.4 IC 0.55 VCEsat Input on Voltage Vi(on) = f (IC ) Input off voltage Vi(off) = f (IC) VCE = 0.3V (common emitter configuration) VCE = 5V (common emitter configuration) 10 2 10 2 mA mA 10 1 IC IC 10 1 10 0 10 -1 10 -2 10 -3 10 0 10 -1 -1 10 10 0 10 1 V 10 2 Vi(on) 0 1 2 3 V 5 Vi(off) 4 Feb-26-2004 SEMD6 Total power dissipation P tot = f (TS) 300 Ptot mW 200 150 100 50 0 0 15 30 45 60 75 90 105 120 °C 150 TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 10 3 Ptotmax/ PtotDC K/W RthJS 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Feb-26-2004