DIOTEC SK1020D2_10

SK1020D2 ... SK10100D2
SK1020D2 ... SK10100D2
Surface Mount Schottky Rectifiers – Single Diode
Schottky-Gleichrichter für die Oberflächenmontage – Einzeldiode
Version 2010-09-22
1.2
4.5
Nominal Current
Nennstrom
10.25 ±0.5
±0.2
4
Type
Typ
1
2
3
1.3
0.8
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
20...100 V
Plastic case
Kunststoffgehäuse
TO-263AB
D²PAK
Weight approx.
Gewicht ca.
5.08
0.4
10 A
4
1.6 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
K
1 2 3
Standard packaging in tubes
Standard Lieferform in Stangen
Dimensions - Maße [mm]
Maximum ratings and Characteristics
Type
Typ
Grenz- und Kennwerte
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
Forward Voltage
Durchlass-Spannung
VF [V] 1)
IF = 5 A
IF = 10 A
SK1020D2
20
20
< 0.51
< 0.55
SK1030D2
30
30
< 0.51
< 0.55
SK1040D2
40
40
< 0.51
< 0.55
SK1045D2
45
45
< 0.51
< 0.55
SK1050D2
50
50
< 0.57
< 0.65
SK1060D2
60
60
< 0.57
< 0.65
SK1080D2
80
80
< 0.71
< 0.83
SK10100D2
100
100
< 0.71
< 0.83
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 100°C
IFAV
10 A
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
30 A 2)
TA = 25°C
IFSM
135/150 A
SK1080D2...
TA = 25°C
SK10100D2
IFSM
115/125 A
TA = 25°C
i2t
80 A2s
Tj
TS
-50...+150°C
-50...+175°C
Peak forward surge current,
50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
SK1020D2...
SK1060D2
Rating for fusing – Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
1
2
Tj = 25°C
Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C
© Diotec Semiconductor AG
http://www.diotec.com/
1
SK1020D2 ... SK10100D2
Characteristics
Kennwerte
Leakage current
Sperrstrom
SK1020D2...
SK1045D2
Tj = 25°C
Tj = 100°C
VR = VRRM
IR
< 300 µA
< 45 mA
Leakage current
Sperrstrom
SK1050D2...
Tj = 25°C
SK10100D2 Tj = 100°C
VR = VRRM
IR
< 200 µA
< 25 mA
RthC
< 1.5 K/W
Thermal resistance junction to case
Wärmewiderstand Sperrschicht - Gehäuse
102
120
[%]
SK1020D2...SK1045D2
[A]
100
SK1050D2, SK1060D2
10
80
1
60
40
10-1
20
IFAV
0
10
-2
0
TC
50
100
150
[°C]
Rated forward current vs. temp. of the case
Zul. Richtstrom in Abh. v. d. Gehäusetemperatur
2
SK1080D2, SK10100D2
IF
http://www.diotec.com/
0
0.4
0.6
1.0
VF
[V]
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
© Diotec Semiconductor AG