SMK0460P Semiconductor Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • PIN Connection High Voltage: BVDSS=600V(Min.) Low Crss : Crss=5.8pF(Typ.) Low gate charge : Qg=13nC(Typ.) Low RDS(on) :RDS(on)=2.5Ω(Max.) D G Ordering Information Type No. Marking Package Code SMK0460P SMK0460 TO-220AB-3L GDS S TO-220AB-3L Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V (Tc=25℃) 4 A (Tc=100℃) 2.53 A Drain current (DC) ID * IDM 16 A Drain Power dissipation PD 70 W Drain current (Pulsed) Avalanche current (Single) ② IAS 4 A Single pulsed avalanche energy ② EAS 225 mJ Avalanche current (Repetitive) ① IAR 4 A Repetitive avalanche energy ① EAR 10 mJ TJ 150 Tstg -55~150 Junction temperature Storage temperature range °C * Limited by maximum junction temperature Characteristic Thermal resistance Symbol Typ. Max Junction-case Rth(J-C) - 1.78 Junction-ambient Rth(J-a) - 62.5 KSD-T0P021-000 Unit ℃/W 1 SMK0460P Electrical Characteristics (TC=25°C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=250μA, VGS=0 600 - - V Gate-threshold voltage VGS(th) ID=250μA, VDS= VGS 2.0 - 4.0 V Drain-source leakage current IDSS VDS=600V, VGS=0V - - 1 μA Gate-source leakage IGSS VDS=0V, VGS=±30V - - ±100 nA Drain-Source on-resistance ④ RDS(ON) VGS=10V, ID=2.0A - 2.1 2.5 Ω Forward transfer admittance ④ gfs VDS=10V, ID=2.0A - 4.0 - S - 592 789 - 54 72 - 5.8 7.7 - 10 - - 42 - - 38 - - 46 - - 13 17 - 4 - - 3 - Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VGS=0V, VDS=25V, f=1MHz VDD=300V, ID=4A RG=25Ω ③④ VDS=480V, VGS=10V ID=4A ③④ pF ns nC Source-Drain Diode Ratings and Characteristics (TC=25°C unless otherwise noted) Characteristic Symbol Continuous source current IS Test Condition Min Typ Max - - 4 - - 16 Unit Source current (Pulsed) ① ISM Integral reverse diode in the MOSFET Forward voltage ④ VSD VGS=0V, IS=4A - - 1.4 V Reverse recovery time trr - 300 - ns Reverse recovery charge Qrr Is=4A dis/dt=100A/us - 2.2 - uC A Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=25.9mH, IAS=4A, VDD=50V, RG=27Ω , Starting TJ = 25℃ ③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2% ④ Essentially independent of operating temperature KSD-T0P021-000 2 SMK0460P Electrical Characteristic Curves Fig. 2 ID - VGS Fig. 1 ID - VDS 7.5 7.0 6.5 6.0 5.5 .0 : .5 ℃ - Fig. 4 IS - VSD Fig. 3 RDS(on) - ID Fig. 5 Capacitance - VDS Fig. 6 VGS - QG ℃ KSD-T0P021-000 3 SMK0460P Electrical Characteristic Curves Fig. 8 RDS(on) - TJ Fig. 7 VDSS - TJ ㅋ C C Fig. 9 ID - TC Fig. 10 Safe Operating Area ` * KSD-T0P021-000 4 SMK0460P Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Resistive Switching Test Circuit & Waveform Fig. 13 EAS Test Circuit & Waveform KSD-T0P021-000 5 SMK0460P Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform KSD-T0P021-000 6 SMK0460P Outline Dimension KSD-T0P021-000 7 SMK0460P The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T0P021-000 8