SMUN52XXDW NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the SMUN5211DW series, two BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Pb-Free Package is available SOT-363 o .055(1.40) .047(1.20) 8 o 0 .026TYP (0.65TYP) .021REF (0.525)REF .053(1.35) .045(1.15) .096(2.45) .085(2.15) .018(0.46) .010(0.26) .014(0.35) .006(0.15) MARKING DIAGRAM 6 5 R1 Q2 .087(2.20) .079(2.00) 4 6 5 4 .004(0.10) .000(0.00) R2 7X .043(1.10) .035(0.90) Q1 R2 R1 1 .006(0.15) .003(0.08) 1 2 3 Dimensions in inches and (millimeters) 3 MAXIMUM RATINGS 2 .039(1.00) .035(0.90) 7X = Device Marking (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ) Rating Symbol Value Unit Collector-Base Voltage V CBO 50 Vdc Collector-Emitter Voltage V CEO 50 Vdc IC 100 mAdc Collector Current THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation Derate above 25°C T A = 25°C Thermal Resistance – Junction-to-Ambient Characteristic (Both Junctions Heated) Symbol PD R JA Symbol Max Note 1 Note 2 Unit 187 1.5 256 2.0 mW mW/°C 670 490 °C/W Max Note 1 Note 2 Unit PD 250 2.0 385 3.0 mW mW/°C Thermal Resistance – Junction-to-Ambient R θJA 493 325 °C/W Thermal Resistance – Junction-to-Lead R θJL 188 208 °C/W Total Device Dissipation Derate above 25°C T A = 25°C Junction and Storage Temperature 1. FR–4 @ Minimum Pad http://www.SeCoSGmbH.com 22-Jun-2007 Rev. A T J , T stg –55 to +150 °C 2. FR–4 @ 1.0 x 1.0 inch Pad Any changing of specification will not be informed individual Page 1 of 8 SMUN52XXDW NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente DEVICE MARKING , RESISTOR VALUES AND ORDERING INFORMATION Device Package Marking R1(K) R2(K) Shipping SMUN5211DW SOT-363 7A 10 10 3000/Tape&Reel SMUN5212DW SOT-363 7B 22 22 3000/Tape&Reel SMUN5213DW SOT-363 7C 47 47 3000/Tape&Reel SMUN5214DW SOT-363 7D 10 47 3000/Tape&Reel SMUN5215DW SOT-363 7E 10 open 3000/Tape&Reel SMUN5216DW SOT-363 7F 4.7 open 3000/Tape&Reel SMUN5230DW SOT-363 7G 1 1 3000/Tape&Reel SMUN5231DW SOT-363 7H 2.2 2.2 3000/Tape&Reel SMUN5232DW SOT-363 7J 4.7 4.7 3000/Tape&Reel SMUN5233DW SOT-363 7K 4.7 47 3000/Tape&Reel SMUN5234DW SOT-363 7L 22 47 3000/Tape&Reel SMUN5235DW SOT-363 7M 2.2 47 3000/Tape&Reel SMUN5236DW SOT-363 7N 100 100 3000/Tape&Reel SMUN5237DW SOT-363 7P 47 22 3000/Tape&Reel ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ) Characteristic Symbol OFF CHARACTERISTICS Collector-Base Cutoff Current (V CB = 50 V, I E = 0) I CBO Collector-Emitter Cutoff Current (V CE = 50 V, I B = 0) I CEO I EBO Emitter-Base Cutoff Current SMUN5211DW (V EB = 6.0 V, I C = 0) SMUN5212DW SMUN5213DW SMUN5214DW SMUN5215DW SMUN5216DW SMUN5230DW SMUN5231DW SMUN5232DW SMUN5233DW SMUN5234DW SMUN5235DW SMUN5236DW SMUN5237DW Collector-Base Breakdown Voltage (I C = 10 ∝A, I E = 0) Collector-Emitter Breakdown Voltage(Note 4.)(IC = 2.0 mA,I B=0) V (BR)CBO V (BR)CEO Min Typ Max Unit – – – – – – – – – – – – – – – – 50 50 – – – – – – – – – – – – – – – – – – 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 – – nAdc nAdc mAdc Vdc Vdc 4. Pulse Test: Pulse Width < 300 ∝s, Duty Cycle < 2.0% http://www.SeCoSGmbH.com 22-Jun-2007 Rev. A Any changing of specification will not be informed individual Page 2 of 8 SMUN52XXDW NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) Characteristic Symbol ON CHARACTERISTICS(Note 5.) h FE DC Current Gain SMUN5211DW (V CE = 10 V, I C = 5.0 mA) SMUN5212DW SMUN5213DW SMUN5214DW SMUN5215DW SMUN5216DW SMUN5230DW SMUN5231DW SMUN5232DW SMUN5233DW SMUN5234DW SMUN5235DW SMUN5236DW SMUN5237DW Collector-Emitter Saturation Voltage (IC= 10mA,IB= 0.3 mA) V CE(sat) (I C= 10mA, I B= 5mA) SMUN5230DW/SMUN5231DW (I C= 10mA, IB= 1mA) SMUN5215DW/SMUN5216DW SMUN5232DW/SMUN5233DW/SMUN5234DW Output Voltage (on) V OL SMUN5211DW (V CC = 5.0 V, V B = 2.5 V, R L = 1.0 kΩ) SMUN5212DW SMUN5214DW SMUN5215DW SMUN5216DW SMUN5230DW SMUN5231DW SMUN5232DW SMUN5233DW SMUN5234DW SMUN5235DW (V CC = 5.0 V, V B = 3.5 V, R L = 1.0 kΩ) SMUN5213DW (V CC = 5.0 V, V B = 5.5 V, R L = 1.0 kΩ) SMUN5236DW (V CC = 5.0 V, V B = 4.0 V, R L = 1.0 kΩ) SMUN5237DW Output Voltage (off) (V CC = 5.0 V, V B = 0.5 V, R L = 1.0 kΩ) V OH (V CC = 5.0 V, V B = 0.05 V, R L = 1.0 kΩ) SMUN5230DW (V CC = 5.0 V, V B = 0.25 V, R L = 1.0 kΩ) SMUN5215DW SMUN5216DW SMUN5233DW (Continued) Min Typ 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 – 60 100 140 140 350 350 5.0 15 30 200 150 140 150 140 – – – – – – – – – – – – – – – – – – – – – – – – – – – – – 4.9 – Max Unit – – – – – – – – – – – – – – 0.25 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 – Vdc Vdc Vdc 5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://www.SeCoSGmbH.com 22-Jun-2007 Rev. A Any changing of specification will not be informed individual Page 3 of 8 SMUN52XXDW NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) (Continued) Characteristic Symbol Min Typ ON CHARACTERISTICS(Note 6.) Input Resistor Resistor Ratio SMUN5211DW SMUN5212DW SMUN5213DW SMUN5214DW SMUN5215DW SMUN5216DW SMUN5230DW SMUN5231DW SMUN5232DW SMUN5233DW SMUN5234DW SMUN5235DW SMUN5236DW SMUN5237DW SMUN5211DW/SMUN5212DW SMUN5213DW/SMUN5236DW SMUN5214DW/SMUN5215DW SMUN5216DW/SMUN5230DW SMUN5231DW/SMUN5232DW SMUN5233DW SMUN5234DW SMUN5235DW SMUN5237DW R1 Max 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 0.8 0.17 – 0.8 0.055 0.38 0.038 1.7 1.0 0.21 – 1.0 0.1 0.47 0.047 2.1 1.2 0.25 – 1.2 0.185 0.56 0.056 2.6 Unit kΩ R 1 /R 2 6. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% P D , POWER DISSIPATION (mW) 300 250 200 150 100 833°C 50 0 –50 0 50 100 150 T A , AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve http://www.SeCoSGmbH.com 22-Jun-2007 Rev. A Any changing of specification will not be informed individual Page 4 of 8 SMUN52XXDW NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente 1 0.1 0.01 0.001 0 20 40 50 h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS – SMUN5211DW 100 10 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 2. V CE(sat) versus I C Figure 3. DC Current Gain 100 I C , COLLECTOR CURRENT (mA) 4 C ob CAPACITANCE (pF) 1000 3 2 1 10 1 0.1 0.01 0.001 0 0 10 20 30 40 0 50 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage V in , INPUT VOLTAGE (VOLTS) 10 1 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 6. Input Voltage versus Output Current http://www.SeCoSGmbH.com 22-Jun-2007 Rev. A Any changing of specification will not be informed individual Page 5 of 8 SMUN52XXDW NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente 10 1 0.1 0.01 0 20 40 50 h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS – SMUN5212DW 100 10 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 7. V CE(sat) versus I C Figure 8. DC Current Gain 100 I C , COLLECTOR CURRENT (mA) 4 C ob CAPACITANCE (pF) 1000 3 2 1 10 1 0.1 0.01 0.001 0 0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current versus Input oltage 10 V in , INPUT VOLTAGE (VOLTS) 100 10 1 0.1 0 10 20 30 40 50 I C ,COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current http://www.SeCoSGmbH.com 22-Jun-2007 Rev. A Any changing of specification will not be informed individual Page 6 of 8 SMUN52XXDW NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente 10 1 0.1 0.01 0 20 40 50 h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS – SMUN5213DW 100 10 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 12. V CE(sat) versus I C Figure 13. DC Current Gain 1 100 I C , COLLECTOR CURRENT (mA) C ob CAPACITANCE (pF) 1000 0.8 0.6 0.4 0.2 10 1 0.1 0.01 0.001 0 0 10 20 30 40 0 50 1 2 3 4 5 6 7 8 9 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 14. Output Capacitance Figure 15. Output Current versus Input oltage 10 V in , INPUT VOLTAGE (VOLTS) 100 10 1 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current http://www.SeCoSGmbH.com 22-Jun-2007 Rev. A Any changing of specification will not be informed individual Page 7 of 8 SMUN52XXDW NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente 1 0.1 0.01 0.001 0 20 40 60 80 h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS – SMUN5214DW 250 200 150 100 50 0 1 2 3 4 5 10 15 20 40 50 60 70 80 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 17. V CE(sat) versus I C Figure 18. DC Current Gain 4 90 100 I C , COLLECTOR CURRENT (mA) 100 3.5 C ob CAPACITANCE (pF) 300 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 45 50 10 1 0 1 2 3 4 5 6 7 8 9 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 19. Output Capacitance Figure 20. Output Current versus Input oltage 10 V in , INPUT VOLTAGE (VOLTS) 10 1 0.1 0 10 20 30 40 50 I C ,COLLECTOR CURRENT (mA) Figure 21. Input Voltage versus Output Current http://www.SeCoSGmbH.com 22-Jun-2007 Rev. A Any changing of specification will not be informed individual Page 8 of 8