ONSEMI MUN5212DW1T1

MUN5211DW1T1 Series
Preferred Devices
Dual Bias Resistor
Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
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The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the MUN5211DW1T1 series,
two BRT devices are housed in the SOT−363 package which is ideal
for low power surface mount applications where board space is at a
premium.
•
•
•
•
(3)
(2)
R1
Q2
R2
(4)
1
SOT−363
CASE 419B
STYLE 1
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
MARKING DIAGRAM
6
XXd
THERMAL CHARACTERISTICS
Symbol
Max
Unit
PD
187 (Note 1.)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
mW
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance −
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
RθJA
670 (Note 1.)
490 (Note 2.)
mW/°C
1
XX = Specific Device Code
d = Date Code
= (See Page 2)
°C/W
DEVICE MARKING INFORMATION
Symbol
Max
Unit
PD
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
mW
Total Device Dissipation
TA = 25°C
Derate above 25°C
mW/°C
Thermal Resistance −
Junction-to-Ambient
RθJA
493 (Note 1.)
325 (Note 2.)
°C/W
Thermal Resistance −
Junction-to-Lead
RθJL
188 (Note 1.)
208 (Note 2.)
°C/W
TJ, Tstg
−55 to +150
°C
Junction and Storage Temperature
(6)
6
(TA = 25°C unless otherwise noted, common for Q1 and Q2)
Characteristic
(One Junction Heated)
R1
(5)
MAXIMUM RATINGS
Collector Current
R2
Q1
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel
Rating
(1)
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
 Semiconductor Components Industries, LLC, 2003
December, 2003 − Rev. 5
1
Publication Order Number:
MUN5211DW1T1/D
MUN5211DW1T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R1 (K)
R2 (K)
Shipping
MUN5211DW1T1
SOT−363
7A
10
10
3000/Tape & Reel
MUN5212DW1T1
SOT−363
7B
22
22
3000/Tape & Reel
MUN5213DW1T1
SOT−363
7C
47
47
3000/Tape & Reel
MUN5214DW1T1
SOT−363
7D
10
47
3000/Tape & Reel
MUN5215DW1T1
SOT−363
7E
10
∞
3000/Tape & Reel
MUN5216DW1T1
SOT−363
7F
4.7
∞
3000/Tape & Reel
MUN5230DW1T1
SOT−363
7G
1.0
1.0
3000/Tape & Reel
MUN5231DW1T1
SOT−363
7H
2.2
2.2
3000/Tape & Reel
MUN5232DW1T1
SOT−363
7J
4.7
4.7
3000/Tape & Reel
MUN5233DW1T1
SOT−363
7K
4.7
47
3000/Tape & Reel
MUN5234DW1T1
SOT−363
7L
22
47
3000/Tape & Reel
MUN5235DW1T1
SOT−363
7M
2.2
47
3000/Tape & Reel
MUN5236DW1T1
SOT−363
7N
100
100
3000/Tape & Reel
MUN5237DW1T1
SOT−363
7P
47
22
3000/Tape & Reel
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2)
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector-Emitter Breakdown Voltage (Note 3.) (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
Characteristic
OFF CHARACTERISTICS
MUN5211DW1T1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5236DW1T1
MUN5237DW1T1
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
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2
MUN5211DW1T1 Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2) (Continued)
Characteristic
Symbol
Min
Typ
Max
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
−
−
−
−
−
−
−
−
−
−
−
−
−
−
VCE(sat)
−
−
0.25
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
4.9
−
−
Unit
ON CHARACTERISTICS (Note 4.)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN5211DW1T1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5236DW1T1
MUN5237DW1T1
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MUN5230DW1T1/MUN5231DW1T1
(IC = 10 mA, IB = 1 mA) MUN5215DW1T1/MUN5216DW1T1
MUN5232DW1T1/MUN5233DW1T1/MUN5234DW1T1
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kΩ)
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ)
VOL
MUN5211DW1T1
MUN5212DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5213DW1T1
MUN5236DW1T1
MUN5237DW1T1
VOH
MUN5230DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5233DW1T1
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
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3
Vdc
Vdc
Vdc
MUN5211DW1T1 Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
kΩ
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
ON CHARACTERISTICS (Note 5.) (Continued)
Input Resistor
MUN5211DW1T1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5236DW1T1
MUN5237DW1T1
Resistor Ratio MUN5211DW1T1/MUN5212DW1T1/
MUN5213DW1T1/MUN5236DW1T1
MUN5214DW1T1
MUN5215DW1T1/MUN5216DW1T1
MUN5230DW1T1/MUN5231DW1T1/MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5237DW1T1
R1/R2
5. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
ALL MUN5211DW1T1 SERIES DEVICES
PD, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
−50
RθJA = 833°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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4
150
MUN5211DW1T1 Series
1
1000
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5211DW1T1
TA=−25°C
25°C
0.1
75°C
0
20
40
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
−25°C
100
0.01
0.001
VCE = 10 V
10
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
2
1
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
75°C
f = 1 MHz
IE = 0 V
TA = 25°C
1
0.1
0.01
0.001
50
TA=−25°C
10
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
10
VO = 0.2 V
TA=−25°C
25°C
75°C
1
0.1
0
10
8
9
Figure 5. Output Current versus Input Voltage
Figure 4. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
4
3
100
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 6. Input Voltage versus Output Current
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5
50
10
MUN5211DW1T1 Series
1000
1
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5212DW1T1
IC/IB = 10
25°C
TA=−25°C
0.1
75°C
0.01
0.001
0
20
−25°C
100
1
100
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4
100
3
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
2
1
75°C
25°C
TA=−25°C
10
1
0.1
0.01
VO = 5 V
0
0
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
10
25°C
75°C
1
0.1
0
10
8
10
Figure 10. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
TA=75°C
25°C
10
50
40
VCE = 10 V
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
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6
MUN5211DW1T1 Series
10
1000
IC/IB = 10
1
25°C
TA=−25°C
0.01
0
25°C
−25°C
10
50
20
40
IC, COLLECTOR CURRENT (mA)
TA=75°C
100
75°C
0.1
VCE = 10 V
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5213DW1T1
10
IC, COLLECTOR CURRENT (mA)
1
Figure 12. VCE(sat) versus IC
1
100
IC, COLLECTOR CURRENT (mA)
0.4
TA=−25°C
10
1
0.1
0.01
0.2
0
25°C
75°C
0.6
0
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
VO = 5 V
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
100
VO = 0.2 V
TA=−25°C
10
25°C
75°C
1
0.1
0
10
8
10
Figure 15. Output Current versus Input Voltage
Figure 14. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
Figure 13. DC Current Gain
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
100
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
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7
MUN5211DW1T1 Series
1
300
IC/IB = 10
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5214DW1T1
TA=−25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA=75°C
VCE = 10
250
25°C
200
−25°C
150
100
50
0
80
2
1
4
6
Figure 17. VCE(sat) versus IC
100
f = 1 MHz
lE = 0 V
TA = 25°C
3
TA=75°C
IC, COLLECTOR CURRENT (mA)
3.5
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35
VR, REVERSE BIAS VOLTAGE (VOLTS)
40
45
10
VO = 5 V
1
50
25°C
−25°C
0
Figure 19. Output Capacitance
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
25°C
75°C
1
0.1
0
10
8
Figure 20. Output Current versus Input Voltage
10
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
90 100
Figure 18. DC Current Gain
4
0
8 10 15 20 40 50 60 70 80
IC, COLLECTOR CURRENT (mA)
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 21. Input Voltage versus Output Current
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8
50
10
MUN5211DW1T1 Series
1
1000
IC/IB = 10
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
25°C
10
1
50
TA = −25°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 22. VCE(sat) versus IC
100
Figure 23. DC Current Gain
100
4
IC, COLLECTOR CURRENT (mA)
4.5
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
0
50
Figure 24. Output Capacitance
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
25°C
75°C
VO = 0.2 V
0.1
0
9
10
Figure 25. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
VCE = 10 V
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5215DW1T1
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 26. Input Voltage versus Output Current
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9
50
MUN5211DW1T1 Series
1
1000
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
TA = −25°C
10
1
50
25°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 27. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
4
3.5
100
Figure 28. DC Current Gain
4.5
3
2.5
2
1.5
1
0.5
75°C
10
25°C
TA = −25°C
1
0.1
0.01
VO = 5 V
0.001
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
0
50
Figure 29. Output Capacitance
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
25°C
75°C
VO = 0.2 V
0.1
0
9
10
Figure 30. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
VCE = 10 V
75°C
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5216DW1T1
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 31. Input Voltage versus Output Current
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10
50
MUN5211DW1T1 Series
100
1
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5230DW1T1
75°C
0.1
−25°C
25°C
0.01
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
75°C
10
25°C
TA = −25°C
VCE = 10 V
1
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 32. VCE(sat) versus IC
Figure 33. DC Current Gain
4.5
IC, COLLECTOR CURRENT (mA)
100
4
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0
Figure 34. Output Capacitance
1
2
7
8
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
75°C
1
25°C
VO = 0.2 V
0.1
0
9
10
Figure 35. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 36. Input Voltage versus Output Current
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11
50
MUN5211DW1T1 Series
100
1
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5231DW1T1
75°C
0.1
−25°C
25°C
0.01
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
TA = −25°C
VCE = 10 V
1
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 37. VCE(sat) versus IC
100
Figure 38. DC Current Gain
4.5
IC, COLLECTOR CURRENT (mA)
100
4
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0
Figure 39. Output Capacitance
1
2
7
8
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
75°C
1
25°C
VO = 0.2 V
0.1
0
9
10
Figure 40. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
25°C
75°C
10
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 41. Input Voltage versus Output Current
http://onsemi.com
12
50
MUN5211DW1T1 Series
1000
1
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5232DW1T1
75°C
0.1
−25°C
25°C
0.01
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
TA = −25°C
10
1
50
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 42. VCE(sat) versus IC
100
Figure 43. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
6
f = 1 MHz
IE = 0 V
TA = 25°C
5
4
3
2
1
0
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
0
50
Figure 44. Output Capacitance
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 45. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 46. Input Voltage versus Output Current
http://onsemi.com
13
50
MUN5211DW1T1 Series
1000
1
VCE = 10 V
IC/IB = 10
0.1
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5233DW1T1
75°C
−25°C
25°C
0.01
0.001
0
5
10
15
25
20
IC, COLLECTOR CURRENT (mA)
75°C
25°C
10
1
30
TA = −25°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 47. VCE(sat) versus IC
Figure 48. DC Current Gain
4
IC, COLLECTOR CURRENT (mA)
100
3.5
f = 1 MHz
IE = 0 V
TA = 25°C
3
2.5
2
1.5
1
0.5
0
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0
Figure 49. Output Capacitance
1
2
7
8
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 50. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
5
10
15
20
IC, COLLECTOR CURRENT (mA)
Figure 51. Input Voltage versus Output Current
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14
25
MUN5211DW1T1 Series
1000
1
VCE = 10 V
IC/IB = 10
0.1
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5234DW1T1
75°C
−25°C
25°C
0.01
0.001
0
5
10
15
25
20
IC, COLLECTOR CURRENT (mA)
75°C
100
25°C
10
1
30
TA = −25°C
1
100
IC, COLLECTOR CURRENT (mA)
Figure 53. DC Current Gain
TBD
TBD
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 54. Output Capacitance
Figure 55. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
Figure 52. VCE(sat) versus IC
10
IC, COLLECTOR CURRENT (mA)
TBD
IC, COLLECTOR CURRENT (mA)
Figure 56. Input Voltage versus Output Current
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15
MUN5211DW1T1 Series
1000
1
VCE = 10 V
IC/IB = 10
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5235DW1T1
75°C
0.1
−25°C
25°C
0.01
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 57. VCE(sat) versus IC
100
Figure 58. DC Current Gain
4.5
IC, COLLECTOR CURRENT (mA)
100
4
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
25°C
10
75°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0
Figure 59. Output Capacitance
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
75°C
1
25°C
TA = −25°C
VO = 0.2 V
0.1
0
9
10
Figure 60. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
25°C
10
1
50
TA = −25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 61. Input Voltage versus Output Current
http://onsemi.com
16
50
MUN5211DW1T1 Series
1000
1
VCE = 10 V
−25°C
IC/IB = 10
75°C
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5236DW1T1
25°C
0.1
0.01
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
100
25°C
10
1
50
TA = −25°C
1
10
IC, COLLECTOR CURRENT (mA)
Figure 62. VCE(sat) versus IC
Figure 63. DC Current Gain
5
IC, COLLECTOR CURRENT (mA)
100
4.5
f = 1 MHz
IE = 0 V
TA = 25°C
4
3.5
3
2.5
2
1.5
1
0.5
0
75°C
10
1
25°C
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
0
50
Figure 64. Output Capacitance
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
10
75°C
25°C
1
VO = 0.2 V
0.1
0
9
10
Figure 65. Output Current versus Input Voltage
100
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 66. Input Voltage versus Output Current
http://onsemi.com
17
50
MUN5211DW1T1 Series
1000
1
VCE = 10 V
IC/IB = 10
−25°C
75°C
0.1
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5237DW1T1
25°C
0.01
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
75°C
100
25°C
10
1
50
TA = −25°C
1
10
IC, COLLECTOR CURRENT (mA)
Figure 67. VCE(sat) versus IC
Figure 68. DC Current Gain
5
IC, COLLECTOR CURRENT (mA)
100
4.5
f = 1 MHz
IE = 0 V
TA = 25°C
4
3.5
3
2.5
2
1.5
1
0.5
0
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
0
50
Figure 69. Output Capacitance
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
10
75°C
25°C
1
VO = 0.2 V
0.1
0
9
10
Figure 70. Output Current versus Input Voltage
100
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
40
10
20
30
IC, COLLECTOR CURRENT (mA)
Figure 71. Input Voltage versus Output Current
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18
50
MUN5211DW1T1 Series
PACKAGE DIMENSIONS
SC−88 (SOT−363)
CASE 419B−02
ISSUE T
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
G
6
5
4
DIM
A
B
C
D
G
H
J
K
N
S
−B−
S
1
2
3
D 6 PL
0.2 (0.008)
M
B
M
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
N
J
C
H
INCHES
MIN
MAX
0.071 0.087
0.045 0.053
0.031 0.043
0.004 0.012
0.026 BSC
−−− 0.004
0.004 0.010
0.004 0.012
0.008 REF
0.079 0.087
EMITTER 2
BASE 2
COLLECTOR 1
EMITTER 1
BASE 1
COLLECTOR 2
K
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
19
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
−−−
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
MUN5211DW1T1 Series
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MUN5211DW1T1/D