MMDT2227 NPN-PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features o .055(1.40) .047(1.20) Power dissipation .026TYP (0.65TYP) PCM : 0.2 W (Tamp.= 25 C) O .021REF (0.525)REF Collector current ICM : 0.2/-0.2 A .053(1.35) .045(1.15) .096(2.45) .085(2.15) Collector-base voltage V(BR)CBO : 75/-60 V .018(0.46) .010(0.26) Operating & Storage junction Temperature .014(0.35) .006(0.15) Tj, Tstg : -55 C~ +150 C O 8 o 0 O .006(0.15) .003(0.08) .087(2.20) .079(2.00) C2 B1 E1 E2 B2 C1 .004(0.10) .000(0.00) .043(1.10) .035(0.90) .039(1.00) .035(0.90) Dimensions in inches and (millimeters) Electrical Characteristics( Tamb=25 O C unless otherwise specified) NPN2222A ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol Test unless conditions otherwise MIN specified） TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=10μA,IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO Ic=10mA,IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 6 V Collector cut-off current ICBO VCB=60V,IE=0 10 nA Emitter cut-off current IEBO VEB=3V,IC=0 10 nA DC current gain hFE VCE=10V,IC=150mA VCE(sat)1 IC=150mA,IB=15mA 0.3 V VCE(sat)2 IC=500mA,IB=50mA 1 V VBE(sat)1 IC=150mA,IB=15mA 1.2 V VBE(sat)2 IC=500mA,IB=50mA 2 V 100 300 Collector-emitter saturation voltage Base -emitter saturation voltage Transition frequency fT Collector output capacitance Cob Noise Figure NF http://www.SeCoSGmbH.com 01-Jan-2006 Rev. B VCE=20V,IC=20mA,f=100MHz VCB=10V,IE=0,f=1MHz VCE=10V,Ic=0.1mA, f=1KHZ,Rs=1KΩ 300 MHz 8 pF 4 dB Any changing of specification will not be informed individual Page 1 of 6 MMDT2227 NPN-PNP Silicon Multi-Chip Transistor Elektronische Bauelemente PNP2907A ELECTRICAL CHARACTERISTICS（Tamb=25℃ Symbol Parameter Test unless otherwise conditions MIN specified） TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-10μA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO Ic=-10mA,IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -10 nA Emitter cut-off current IEBO VEB=-3V,IC=0 -10 nA DC current gain hFE VCE=-10V,IC=-150mA VCE(sat)1 IC=-150mA,IB=-15mA -0.4 V VCE(sat)2 IC=-500mA,IB=-50mA -1.6 V VBE(sat)1 IC=-150mA,IB=-15mA -1.3 V VBE(sat)2 IC=-500mA,IB=-50mA -2.6 V Collector-emitter saturation voltage Base -emitter saturation voltage fT Transition frequency Cob Collector output capacitance 100 VCE=-20V,IC=-50mA,f=100MHz 300 200 MHz VCB=-10V,IE=0,f=1MHz 8 pF SWITCHING TIME EQUIVALENT TEST CIRCUITS + 30 V + 30 V 1.0 to 100 µs, Duty Cycle ≈ 2.0% +16 V 0 –2 V 200 +16 V 1.0 to 100 µs, Duty Cycle ≈ 2.0% 200 0 1 kΩ < 2 ns CS* < 10 pF 1k –14 V < 20 ns CS* < 10 pF 1N914 –4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn–On Time http://www.SeCoSGmbH.com 01-Jan-2006 Rev. B Figure 2. Turn–Off Time Any changing of specification will not be informed individual Page 2 of 6 MMDT2227 NPN-PNP Silicon Multi-chip Transistor Elektronische Bauelemente NPN2222 1000 700 500 hFE , DC Current Gain 300 200 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, Collector Current (mA) 30 50 70 100 200 5.0 10 300 500 700 1.0 k Figure 3. DC Current Gain VCE , Collector–Emitter Voltage (V) 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 I B, Base Current (mA) 2.0 3.0 20 30 50 Figure 4. Collector Saturation Region 200 500 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 20 10 7.0 5.0 t′s = ts – 1/8 tf 100 70 50 tf 30 10 7.0 5.0 10 20 30 50 70 100 I C, Collector Current (mA) Figure 5. Turn – On Time http://www.SeCoSGmbH.com 01-Jan-2006 Rev. B 200 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 20 3.0 2.0 5.0 7.0 300 t, Time (ns) t, Time (ns) 100 70 50 200 300 500 5.0 7.0 10 20 30 50 70 100 I C, Collector Current (mA) 200 300 500 Figure 6. Turn – Off Time Any changing of specification will not be informed individual Page 3 of 6 MMDT2227 NPN-PNP Silicon Multi-Chip Transistor Elektronische Bauelemente NPN2222 10 10 6.0 f = 1.0 kHz 8.0 NF, Noise Figure (dB) IC = 1.0 mA, RS = 150 Ω 500 µA, RS = 200 Ω 100 µA, RS = 2.0 kΩ 50 µA, RS = 4.0 kΩ 8.0 NF, Noise Figure (dB) RS = OPTIMUM RS = SOURCE RS = RESISTANCE 4.0 2.0 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 50 50 100 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k f, Frequency (kHz) RS, Source Resistance (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 30 f T, Current–Gain Bandwidth Products (MHz) 500 20 Ceb Capacitance (pF) IC = 50 µA 100 µA 500 µA 1.0 mA 10 7.0 5.0 Ccb 3.0 2.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 Reverse Voltage (V) 20 30 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 50 Figure 9. Capacitances 2.0 3.0 5.0 7.0 10 20 IC, Collector Current (mA) 30 50 70 100 Figure 10. Current–Gain Bandwidth Product 1.0 +0.5 TJ = 25°C 0 0.8 Coefficient (mV/ °C) V, Voltage (V) VBE(sat) @ IC/IB = 10 1.0 V 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 RqVC for VCE(sat) – 0.5 – 1.0 – 1.5 RqVB for VBE – 2.0 VCE(sat) @ IC/IB = 10 0 – 2.5 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 I C, Collect Current (mA) Figure 11. “On” Voltages http://www.SeCoSGmbH.com 01-Jan-2006 Rev. B 500 1.0 k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I C, Collect Current (mA) 500 Figure 12. Temperature Coefficients Any changing of specification will not be informed individual Page 4 of 6 MMDT2227 NPN-PNP Silicon Multi-Chip Transistor Elektronische Bauelemente TYPICAL CHARACTERISTICS PNP2907 3.0 VCE = –1.0 V VCE = –10 V hFE , Normalized Current Gain 2.0 TJ = 125°C 25°C 1.0 – 55°C 0.7 0.5 0.3 0.2 –0.1 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500 I C, Collector Current (mA) Figure 13. DC Current Gain VCE , Collector–Emitter Voltage (V) –1.0 –0.8 IC = –1.0 mA –10 mA –100 mA –500 mA –0.6 –0.4 –0.2 0 –0.005 –0.01 –0.02 –0.03 –0.05 –0.07 –0.1 –0.2 –0.3 –0.5 –0.7 –1.0 I B, Base Current (mA) –3.0 –2.0 –5.0 –7.0 –10 –20 –30 –50 Figure 14. Collector Saturation Region 500 tr 100 70 50 300 VCC = –30 V IC/IB = 10 TJ = 25°C 30 20 td @ VBE(off) = 0 V tf 7.0 5.0 2.0 V –20 –30 –50 –70 –100 IC, Collector Current –200 –300 –500 Figure 15. Turn–On Time http://www.SeCoSGmbH.com 01-Jan-2006 Rev. B 100 70 50 30 t′s = ts – 1/8 tf 20 10 3.0 –5.0 –7.0 –10 VCC = –30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 200 t, Time (ns) t, Time (ns) 300 200 10 7.0 5.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 I C, Collector Current (mA) –200 –300 –500 Figure 16. Turn–Off Time Any changing of specification will not be informed individual Page 5 of 6 MMDT2227 NPN-PNP Silicon Multi-Chip Transistor Elektronische Bauelemente TYPICAL SMALL– SIGNAL CHARACTERISTICS PNP2907 NOISE FIGURE VCE = 10 Vdc, TA = 25°C 10 10 f = 1.0 kHz 8.0 NF, Noise Figure (dB) NF, Noise Figure (dB) 8.0 IC = –1.0 mA, Rs = 430 Ω –500 µA, Rs = 560 Ω –50 µA, Rs = 2.7 kΩ –100 µA, Rs = 1.6 kΩ 6.0 4.0 Rs = OPTIMUM SOURCE RESISTANCE 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 4.0 0 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k f, Frequency (kHz) R s, Source Resistance (OHMS) Figure 17. Frequency Effects Figure 18. Source Resistance Effects 50 k 400 Ceb 10 7.0 5.0 Ccb 3.0 2.0 –0.1 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10 f T, Current–Gain — Bandwidth Product (MHz) 20 –20 –30 300 200 100 80 VCE = –20 V TJ = 25°C 60 40 30 20 –1.0 –2.0 Reverse Voltage (VOLTS) –5.0 –10 –20 –50 –100 –200 –500 –1000 I C, Collector Current (mA) Figure 19. Capacitances Figure 20. Current–Gain — Bandwidth Product +0.5 –1.0 TJ = 25°C 0 VBE(sat) @ IC/IB = 10 RqVC for VCE(sat) Coefficient (mV/ ° C) –0.8 VBE(on) @ VCE = –10 V –0.6 V, Voltage (V) IC = –50 µA –100 µA –500 µA –1.0 mA 2.0 30 C, Capacitance (pF) 6.0 –0.4 –0.2 –0.5 –1.0 –1.5 RqVB for VBE –2.0 VCE(sat) @ IC/IB = 10 0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 http://www.SeCoSGmbH.com 01-Jan-2006 Rev. B –50 –100 –200 –500 –2.5 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 I C, Collector Current (mA) I C, Collector Current (mA) Figure 21. “On” Voltage Figure 22. Temperature Coefficients Any changing of specification will not be informed individual Page 6 of 6