ONSEMI NSBC114EPDXV6T1G

NSBC114EPDXV6T1G,
NSBC114EPDXV6T5G
Dual Bias Resistor
Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
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The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSBC114EPDXV6T1
series, two complementary BRT devices are housed in the SOT−563
package which is ideal for low power surface mount applications
where board space is at a premium.
(3)
(2)
R1
(1)
R2
Q1
Q2
R2
(4)
R1
(5)
(6)
Features
•
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch Tape and Reel
These are Pb−Free Devices
6
1
SOT−563
CASE 463A
PLASTIC
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1
and Q2, − minus sign for Q1 (PNP) omitted)
Symbol
Value
Unit
Collector-Base Voltage
Rating
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Symbol
Max
Unit
357
2.9
mW
mW/°C
Collector Current
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
TA = 25°C (Note 1)
Derate above 25°C (Note 1)
PD
Thermal Resistance (Note 1)
Junction-to-Ambient
RqJA
Characteristic
(Both Junctions Heated)
Symbol
°C/W
350
Max
Unit
500
4.0
mW
mW/°C
Total Device Dissipation
TA = 25°C (Note 1)
Derate above 25°C (Note 1)
PD
Thermal Resistance (Note 1)
Junction-to-Ambient
RqJA
250
°C/W
TJ, Tstg
−55 to +150
°C
Junction and Storage Temperature
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
© Semiconductor Components Industries, LLC, 2008
November, 2008 − Rev. 5
1
MARKING DIAGRAM
xx MG
G
xx = Specific Device Code
(see table on page 2)
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NSBC114EPDXV6T1G SOT−563
4 mm pitch
4000/Tape & Reel
NSBC114EPDXV6T5G SOT−563
2 mm pitch
8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Publication Order Number:
NSBC114EPDXV6/D
NSBC114EPDXV6T1G, NSBC114EPDXV6T5G
DEVICE MARKING AND RESISTOR VALUES
Package
Marking
R1 (kW)
R2 (kW)
NSBC114EPDXV6T1G
Device
SOT−563
11
10
10
NSBC124EPDXV6T1G
SOT−563
12
22
22
NSBC144EPDXV6T1G
SOT−563
13
47
47
NSBC114YPDXV6T1G
SOT−563
14
10
47
NSBC114TPDXV6T1G (Note 2)
SOT−563
15
10
∞
NSBC143TPDXV6T1G (Note 2)
SOT−563
16
4.7
∞
NSBC113EPDXV6T1G (Note 2)
SOT−563
30
1.0
1.0
NSBC123EPDXV6T1G (Note 2)
SOT−563
31
2.2
2.2
NSBC143EPDXV6T1G (Note 2)
SOT−563
32
4.7
4.7
NSBC143ZPDXV6T1G (Note 2)
SOT−563
33
4.7
47
NSBC124XPDXV6T1G (Note 2)
SOT−563
34
22
47
NSBC123JPDXV6T1G (Note 2)
SOT−563
35
2.2
47
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
mAdc
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
−
−
−
−
−
−
−
−
−
−
−
−
OFF CHARACTERISTICS
NSBC114EPDXV6T1G
NSBC124EPDXV6T1G
NSBC144EPDXV6T1G
NSBC114YPDXV6T1G
NSBC114TPDXV6T1G
NSBC143TPDXV6T1G
NSBC113EPDXV6T1G
NSBC123EPDXV6T1G
NSBC143EPDXV6T1G
NSBC143ZPDXV6T1G
NSBC124XPDXV6T1G
NSBC123JPDXV6T1G
ON CHARACTERISTICS (Note 3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
NSBC114EPDXV6T1G
NSBC124EPDXV6T1G
NSBC144EPDXV6T1G
NSBC114YPDXV6T1G
NSBC114TPDXV6T1G
NSBC143TPDXV6T1G
NSBC113EPDXV6T1G
NSBC123EPDXV6T1G
NSBC143EPDXV6T1G
NSBC143ZPDXV6T1G
NSBC124XPDXV6T1G
NSBC123JPDXV6T1G
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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2
NSBC114EPDXV6T1G, NSBC114EPDXV6T5G
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted)
Characteristic
Symbol
Min
Typ
Max
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Unit
ON CHARACTERISTICS (Note 3)
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA)
(IC = 10 mA, IB = 1 mA)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
NSBC114EPDXV6T1G
NSBC124EPDXV6T1G
NSBC144EPDXV6T1G
NSBC114YPDXV6T1G
NSBC143TPDXV6T1G
NSBC123JPDXV6T1G
NSBC113EPDXV6T1G
NSBC123EPDXV6T1G
NSBC114TPDXV6T1G
NSBC143EPDXV6T1G
NSBC143ZPDXV6T1G
NSBC124XPDXV6T1G
NSBC114EPDXV6T1G
NSBC124EPDXV6T1G
NSBC114YPDXV6T1G
NSBC114TPDXV6T1G
NSBC143TPDXV6T1G
NSBC113EPDXV6T1G
NSBC123EPDXV6T1G
NSBC143EPDXV6T1G
NSBC143ZPDXV6T1G
NSBC124XPDXV6T1G
NSBC123JPDXV6T1G
NSBC144EPDXV6T1G
NSBC114EPDXV6T1G
NSBC124EPDXV6T1G
NSBC144EPDXV6T1G
NSBC114YPDXV6T1G
NSBC143TPDXV6T1G
NSBC143ZPDXV6T1G
NSBC124XPDXV6T1G
NSBC123JPDXV6T1G
NSBC113EPDXV6T1G
NSBC114TPDXV6T1G
NSBC123EPDXV6T1G
NSBC143EPDXV6T1G
VCE(sat)
VOL
VOH
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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3
Vdc
Vdc
Vdc
NSBC114EPDXV6T1G, NSBC114EPDXV6T5G
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted)
Characteristic
Symbol
Min
Typ
Max
Unit
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
kW
0.8
0.8
0.8
0.17
−
−
0.8
0.8
0.8
0.055
0.38
0.038
1.0
1.0
1.0
0.21
−
−
1.0
1.0
1.0
0.1
0.47
0.047
1.2
1.2
1.2
0.25
−
−
1.2
1.2
1.2
0.185
0.56
0.056
ON CHARACTERISTICS (Note 3)
Input Resistor
NSBC114EPDXV6T1G
NSBC124EPDXV6T1G
NSBC144EPDXV6T1G
NSBC114YPDXV6T1G
NSBC114TPDXV6T1G
NSBC143TPDXV6T1G
NSBC113EPDXV6T1G
NSBC123EPDXV6T1G
NSBC143EPDXV6T1G
NSBC143ZPDXV6T1G
NSBC124XPDXV6T1G
NSBC123JPDXV6T1G
Resistor Ratio
NSBC114EPDXV6T1G
NSBC124EPDXV6T1G
NSBC144EPDXV6T1G
NSBC114YPDXV6T1G
NSBC114TPDXV6T1G
NSBC143TPDXV6T1G
NSBC113EPDXV6T1G
NSBC123EPDXV6T1G
NSBC143EPDXV6T1G
NSBC143ZPDXV6T1G
NSBC124XPDXV6T1G
NSBC123JPDXV6T1G
R1/R2
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
PD, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
−50
RqJA = 490°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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4
150
NSBC114EPDXV6T1G, NSBC114EPDXV6T5G
1
1000
IC/IB = 10
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDXV6T1 NPN TRANSISTOR
TA=-25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
TA=75°C
25°C
-25°C
100
10
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
2
1
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
75°C
f = 1 MHz
IE = 0 V
TA = 25°C
1
0.1
0.01
VO = 5 V
0.001
50
TA=-25°C
10
0
1
2
5
6
7
3
4
Vin, INPUT VOLTAGE (VOLTS)
10
VO = 0.2 V
TA=-25°C
25°C
75°C
1
0.1
0
10
8
9
Figure 5. Output Current versus Input Voltage
Figure 4. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
C ob, CAPACITANCE (pF)
4
3
100
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 6. Input Voltage versus Output Current
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5
50
10
NSBC114EPDXV6T1G, NSBC114EPDXV6T5G
1000
1
IC/IB = 10
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDXV6T1 PNP TRANSISTOR
TA=-25°C
0.1
25°C
75°C
0.01
0
VCE = 10 V
TA=75°C
25°C
100
10
20
40
IC, COLLECTOR CURRENT (mA)
50
-25°C
1
10
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
2
1
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
1
0.1
0.01
0.001
50
TA=-25°C
10
VO = 5 V
0
Figure 9. Output Capacitance
1
2
6
7
3
4
5
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
10
25°C
75°C
1
0.1
0
10
8
9
Figure 10. Output Current versus Input
Voltage
100
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
4
3
100
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 11. Input Voltage versus Output Current
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6
50
10
NSBC114EPDXV6T1G, NSBC114EPDXV6T5G
1000
1
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC124EPDXV6T1 NPN TRANSISTOR
IC/IB = 10
25°C
TA=-25°C
0.1
75°C
0.01
VCE = 10 V
TA=75°C
25°C
-25°C
100
10
0.001
0
20
IC, COLLECTOR CURRENT (mA)
40
50
1
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
4
100
2
1
75°C
25°C
TA=-25°C
10
1
0.1
0.01
VO = 5 V
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0.001
50
Figure 14. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
10
25°C
75°C
1
0.1
0
10
8
10
Figure 15. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
3
100
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output
Current
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7
50
NSBC114EPDXV6T1G, NSBC114EPDXV6T5G
1000
10
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC124EPDXV6T1 PNP TRANSISTOR
IC/IB = 10
1
25°C
TA=-25°C
75°C
0.1
0.01
VCE = 10 V
TA=75°C
25°C
-25°C
100
10
0
20
IC, COLLECTOR CURRENT (mA)
1
50
40
10
Figure 17. VCE(sat) versus IC
Figure 18. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
3
2
1
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
TA=-25°C
10
1
0.1
0.01
0.001
50
Figure 19. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
10
25°C
75°C
1
0.1
0
10
8
9
10
Figure 20. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
4
0
100
IC, COLLECTOR CURRENT (mA)
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 21. Input Voltage versus Output Current
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8
NSBC114EPDXV6T1G, NSBC114EPDXV6T5G
10
1000
IC/IB = 10
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC144EPDXV6T1 NPN TRANSISTOR
1
25°C
TA=-25°C
75°C
0.1
0.01
0
20
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
100
10
50
40
VCE = 10 V
1
10
IC, COLLECTOR CURRENT (mA)
Figure 22. VCE(sat) versus IC
Figure 23. DC Current Gain
1
100
f = 1 MHz
IE = 0 V
TA = 25°C
IC, COLLECTOR CURRENT (mA)
0.4
0.2
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
75°C
0.6
TA=-25°C
10
1
0.1
0.01
VO = 5 V
0.001
50
0
Figure 24. Output Capacitance
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
10
25°C
75°C
1
0.1
0
10
8
10
Figure 25. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
0.8
100
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 26. Input Voltage versus Output Current
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9
NSBC114EPDXV6T1G, NSBC114EPDXV6T5G
1
1000
IC/IB = 10
TA=-25°C
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC144EPDXV6T1 PNP TRANSISTOR
25°C
75°C
0.1
0.01
0
10
20
30
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
100
10
40
1
10
IC, COLLECTOR CURRENT (mA)
Figure 27. VCE(sat) versus IC
Figure 28. DC Current Gain
1
100
0.6
0.4
0.2
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
-25°C
1
0.1
0.01
0.001
50
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
25°C
75°C
1
0.1
0
10
8
9
10
Figure 30. Output Current versus Input Voltage
100
10
25°C
TA=75°C
10
Figure 29. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
0.8
100
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 31. Input Voltage versus Output Current
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10
NSBC114EPDXV6T1G, NSBC114EPDXV6T5G
1
300
IC/IB = 10
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114YPDXV6T1 NPN TRANSISTOR
TA=-25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA=75°C
VCE = 10
250
25°C
200
-25°C
150
100
50
0
80
1
2
4
6
Figure 32. VCE(sat) versus IC
100
f = 1 MHz
lE = 0 V
TA = 25°C
3
TA=75°C
IC, COLLECTOR CURRENT (mA)
3.5
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35
VR, REVERSE BIAS VOLTAGE (VOLTS)
40
45
25°C
-25°C
10
VO = 5 V
1
50
Figure 34. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
25°C
75°C
1
0.1
0
10
8
Figure 35. Output Current versus Input Voltage
10
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
90 100
Figure 33. DC Current Gain
4
0
8 10 15 20 40 50 60 70 80
IC, COLLECTOR CURRENT (mA)
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 36. Input Voltage versus Output Current
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11
50
10
NSBC114EPDXV6T1G, NSBC114EPDXV6T5G
180
1
IC/IB = 10
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114YPDXV6T1 PNP TRANSISTOR
TA=-25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA=75°C
VCE = 10 V
160
25°C
140
-25°C
120
100
80
60
40
20
0
80
1
2
4
6
Figure 37. VCE(sat) versus IC
100
TA=75°C
3.5
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
4
3
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35
VR, REVERSE BIAS VOLTAGE (VOLTS)
40
45
10
VO = 5 V
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
25°C
TA=-25°C
75°C
1
0
10
8
10
Figure 40. Output Current versus Input Voltage
10
0.1
25°C
-25°C
1
50
Figure 39. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
80 90 100
Figure 38. DC Current Gain
4.5
0
8 10 15 20 40 50 60 70
IC, COLLECTOR CURRENT (mA)
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 41. Input Voltage versus Output Current
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12
NSBC114EPDXV6T1G, NSBC114EPDXV6T5G
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114TPDXV6T1
HFE, DC CURRENT GAIN (NORMALIZED)
1000
HFE, DC CURRENT GAIN (NORMALIZED)
1000
TA = 25°C
VCE = 10 V
VCE = 5.0 V
100
TA = 25°C
VCE = 10 V
VCE = 5.0 V
100
1.0
10
IC, COLLECTOR CURRENT (mA)
100
1.0
Figure 42. DC Current Gain − PNP
10
IC, COLLECTOR CURRENT (mA)
100
Figure 43. DC Current Gain − NPN
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC143TPDXV6T1
HFE, DC CURRENT GAIN (NORMALIZED)
1000
HFE, DC CURRENT GAIN (NORMALIZED)
1000
TA = 25°C
VCE = 10 V
VCE = 5.0 V
100
TA = 25°C
VCE = 10 V
VCE = 5.0 V
100
1.0
10
IC, COLLECTOR CURRENT (mA)
100
1.0
Figure 44. DC Current Gain − PNP
10
IC, COLLECTOR CURRENT (mA)
Figure 45. DC Current Gain − NPN
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13
100
NSBC114EPDXV6T1G, NSBC114EPDXV6T5G
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
D
−X−
6
5
1
e
2
A
4
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
L
E
−Y−
DIM
A
b
C
D
E
e
L
HE
HE
b 65 PL
0.08 (0.003)
C
M
X Y
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NSBC114EPDXV6/D