NSBC114EPDXV6T1G, NSBC114EPDXV6T5G Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSBC114EPDXV6T1 series, two complementary BRT devices are housed in the SOT−563 package which is ideal for low power surface mount applications where board space is at a premium. (3) (2) R1 (1) R2 Q1 Q2 R2 (4) R1 (5) (6) Features • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch Tape and Reel These are Pb−Free Devices 6 1 SOT−563 CASE 463A PLASTIC MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Symbol Value Unit Collector-Base Voltage Rating VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Symbol Max Unit 357 2.9 mW mW/°C Collector Current THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C (Note 1) Derate above 25°C (Note 1) PD Thermal Resistance (Note 1) Junction-to-Ambient RqJA Characteristic (Both Junctions Heated) Symbol °C/W 350 Max Unit 500 4.0 mW mW/°C Total Device Dissipation TA = 25°C (Note 1) Derate above 25°C (Note 1) PD Thermal Resistance (Note 1) Junction-to-Ambient RqJA 250 °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad © Semiconductor Components Industries, LLC, 2008 November, 2008 − Rev. 5 1 MARKING DIAGRAM xx MG G xx = Specific Device Code (see table on page 2) M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NSBC114EPDXV6T1G SOT−563 4 mm pitch 4000/Tape & Reel NSBC114EPDXV6T5G SOT−563 2 mm pitch 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. Publication Order Number: NSBC114EPDXV6/D NSBC114EPDXV6T1G, NSBC114EPDXV6T5G DEVICE MARKING AND RESISTOR VALUES Package Marking R1 (kW) R2 (kW) NSBC114EPDXV6T1G Device SOT−563 11 10 10 NSBC124EPDXV6T1G SOT−563 12 22 22 NSBC144EPDXV6T1G SOT−563 13 47 47 NSBC114YPDXV6T1G SOT−563 14 10 47 NSBC114TPDXV6T1G (Note 2) SOT−563 15 10 ∞ NSBC143TPDXV6T1G (Note 2) SOT−563 16 4.7 ∞ NSBC113EPDXV6T1G (Note 2) SOT−563 30 1.0 1.0 NSBC123EPDXV6T1G (Note 2) SOT−563 31 2.2 2.2 NSBC143EPDXV6T1G (Note 2) SOT−563 32 4.7 4.7 NSBC143ZPDXV6T1G (Note 2) SOT−563 33 4.7 47 NSBC124XPDXV6T1G (Note 2) SOT−563 34 22 47 NSBC123JPDXV6T1G (Note 2) SOT−563 35 2.2 47 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − − − − − − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 − − − − − − − − − − − − OFF CHARACTERISTICS NSBC114EPDXV6T1G NSBC124EPDXV6T1G NSBC144EPDXV6T1G NSBC114YPDXV6T1G NSBC114TPDXV6T1G NSBC143TPDXV6T1G NSBC113EPDXV6T1G NSBC123EPDXV6T1G NSBC143EPDXV6T1G NSBC143ZPDXV6T1G NSBC124XPDXV6T1G NSBC123JPDXV6T1G ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) NSBC114EPDXV6T1G NSBC124EPDXV6T1G NSBC144EPDXV6T1G NSBC114YPDXV6T1G NSBC114TPDXV6T1G NSBC143TPDXV6T1G NSBC113EPDXV6T1G NSBC123EPDXV6T1G NSBC143EPDXV6T1G NSBC143ZPDXV6T1G NSBC124XPDXV6T1G NSBC123JPDXV6T1G 2. New resistor combinations. Updated curves to follow in subsequent data sheets. 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 2 NSBC114EPDXV6T1G, NSBC114EPDXV6T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Characteristic Symbol Min Typ Max − − − − − − − − − − − − − − − − − − − − − − − − 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 − − − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 − − − − − − − − − − − − − − − − − − − − − − − − Unit ON CHARACTERISTICS (Note 3) Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) (IC = 10 mA, IB = 1 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) NSBC114EPDXV6T1G NSBC124EPDXV6T1G NSBC144EPDXV6T1G NSBC114YPDXV6T1G NSBC143TPDXV6T1G NSBC123JPDXV6T1G NSBC113EPDXV6T1G NSBC123EPDXV6T1G NSBC114TPDXV6T1G NSBC143EPDXV6T1G NSBC143ZPDXV6T1G NSBC124XPDXV6T1G NSBC114EPDXV6T1G NSBC124EPDXV6T1G NSBC114YPDXV6T1G NSBC114TPDXV6T1G NSBC143TPDXV6T1G NSBC113EPDXV6T1G NSBC123EPDXV6T1G NSBC143EPDXV6T1G NSBC143ZPDXV6T1G NSBC124XPDXV6T1G NSBC123JPDXV6T1G NSBC144EPDXV6T1G NSBC114EPDXV6T1G NSBC124EPDXV6T1G NSBC144EPDXV6T1G NSBC114YPDXV6T1G NSBC143TPDXV6T1G NSBC143ZPDXV6T1G NSBC124XPDXV6T1G NSBC123JPDXV6T1G NSBC113EPDXV6T1G NSBC114TPDXV6T1G NSBC123EPDXV6T1G NSBC143EPDXV6T1G VCE(sat) VOL VOH 2. New resistor combinations. Updated curves to follow in subsequent data sheets. 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 3 Vdc Vdc Vdc NSBC114EPDXV6T1G, NSBC114EPDXV6T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Characteristic Symbol Min Typ Max Unit R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 kW 0.8 0.8 0.8 0.17 − − 0.8 0.8 0.8 0.055 0.38 0.038 1.0 1.0 1.0 0.21 − − 1.0 1.0 1.0 0.1 0.47 0.047 1.2 1.2 1.2 0.25 − − 1.2 1.2 1.2 0.185 0.56 0.056 ON CHARACTERISTICS (Note 3) Input Resistor NSBC114EPDXV6T1G NSBC124EPDXV6T1G NSBC144EPDXV6T1G NSBC114YPDXV6T1G NSBC114TPDXV6T1G NSBC143TPDXV6T1G NSBC113EPDXV6T1G NSBC123EPDXV6T1G NSBC143EPDXV6T1G NSBC143ZPDXV6T1G NSBC124XPDXV6T1G NSBC123JPDXV6T1G Resistor Ratio NSBC114EPDXV6T1G NSBC124EPDXV6T1G NSBC144EPDXV6T1G NSBC114YPDXV6T1G NSBC114TPDXV6T1G NSBC143TPDXV6T1G NSBC113EPDXV6T1G NSBC123EPDXV6T1G NSBC143EPDXV6T1G NSBC143ZPDXV6T1G NSBC124XPDXV6T1G NSBC123JPDXV6T1G R1/R2 2. New resistor combinations. Updated curves to follow in subsequent data sheets. 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 −50 RqJA = 490°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve http://onsemi.com 4 150 NSBC114EPDXV6T1G, NSBC114EPDXV6T5G 1 1000 IC/IB = 10 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDXV6T1 NPN TRANSISTOR TA=-25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) VCE = 10 V TA=75°C 25°C -25°C 100 10 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 25°C 75°C f = 1 MHz IE = 0 V TA = 25°C 1 0.1 0.01 VO = 5 V 0.001 50 TA=-25°C 10 0 1 2 5 6 7 3 4 Vin, INPUT VOLTAGE (VOLTS) 10 VO = 0.2 V TA=-25°C 25°C 75°C 1 0.1 0 10 8 9 Figure 5. Output Current versus Input Voltage Figure 4. Output Capacitance V in , INPUT VOLTAGE (VOLTS) C ob, CAPACITANCE (pF) 4 3 100 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 6. Input Voltage versus Output Current http://onsemi.com 5 50 10 NSBC114EPDXV6T1G, NSBC114EPDXV6T5G 1000 1 IC/IB = 10 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDXV6T1 PNP TRANSISTOR TA=-25°C 0.1 25°C 75°C 0.01 0 VCE = 10 V TA=75°C 25°C 100 10 20 40 IC, COLLECTOR CURRENT (mA) 50 -25°C 1 10 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 25°C 75°C f = 1 MHz lE = 0 V TA = 25°C 1 0.1 0.01 0.001 50 TA=-25°C 10 VO = 5 V 0 Figure 9. Output Capacitance 1 2 6 7 3 4 5 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25°C 10 25°C 75°C 1 0.1 0 10 8 9 Figure 10. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) 4 3 100 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 11. Input Voltage versus Output Current http://onsemi.com 6 50 10 NSBC114EPDXV6T1G, NSBC114EPDXV6T5G 1000 1 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − NSBC124EPDXV6T1 NPN TRANSISTOR IC/IB = 10 25°C TA=-25°C 0.1 75°C 0.01 VCE = 10 V TA=75°C 25°C -25°C 100 10 0.001 0 20 IC, COLLECTOR CURRENT (mA) 40 50 1 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 4 100 2 1 75°C 25°C TA=-25°C 10 1 0.1 0.01 VO = 5 V 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 50 Figure 14. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25°C 10 25°C 75°C 1 0.1 0 10 8 10 Figure 15. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 3 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current http://onsemi.com 7 50 NSBC114EPDXV6T1G, NSBC114EPDXV6T5G 1000 10 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − NSBC124EPDXV6T1 PNP TRANSISTOR IC/IB = 10 1 25°C TA=-25°C 75°C 0.1 0.01 VCE = 10 V TA=75°C 25°C -25°C 100 10 0 20 IC, COLLECTOR CURRENT (mA) 1 50 40 10 Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 3 2 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 25°C 75°C f = 1 MHz lE = 0 V TA = 25°C TA=-25°C 10 1 0.1 0.01 0.001 50 Figure 19. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25°C 10 25°C 75°C 1 0.1 0 10 8 9 10 Figure 20. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) 4 0 100 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current http://onsemi.com 8 NSBC114EPDXV6T1G, NSBC114EPDXV6T5G 10 1000 IC/IB = 10 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − NSBC144EPDXV6T1 NPN TRANSISTOR 1 25°C TA=-25°C 75°C 0.1 0.01 0 20 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C -25°C 100 10 50 40 VCE = 10 V 1 10 IC, COLLECTOR CURRENT (mA) Figure 22. VCE(sat) versus IC Figure 23. DC Current Gain 1 100 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 0.4 0.2 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 25°C 75°C 0.6 TA=-25°C 10 1 0.1 0.01 VO = 5 V 0.001 50 0 Figure 24. Output Capacitance 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25°C 10 25°C 75°C 1 0.1 0 10 8 10 Figure 25. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) 0.8 100 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 26. Input Voltage versus Output Current http://onsemi.com 9 NSBC114EPDXV6T1G, NSBC114EPDXV6T5G 1 1000 IC/IB = 10 TA=-25°C hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − NSBC144EPDXV6T1 PNP TRANSISTOR 25°C 75°C 0.1 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C -25°C 100 10 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 27. VCE(sat) versus IC Figure 28. DC Current Gain 1 100 0.6 0.4 0.2 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) -25°C 1 0.1 0.01 0.001 50 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25°C 25°C 75°C 1 0.1 0 10 8 9 10 Figure 30. Output Current versus Input Voltage 100 10 25°C TA=75°C 10 Figure 29. Output Capacitance V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 0.8 100 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 31. Input Voltage versus Output Current http://onsemi.com 10 NSBC114EPDXV6T1G, NSBC114EPDXV6T5G 1 300 IC/IB = 10 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114YPDXV6T1 NPN TRANSISTOR TA=-25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75°C VCE = 10 250 25°C 200 -25°C 150 100 50 0 80 1 2 4 6 Figure 32. VCE(sat) versus IC 100 f = 1 MHz lE = 0 V TA = 25°C 3 TA=75°C IC, COLLECTOR CURRENT (mA) 3.5 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 25°C -25°C 10 VO = 5 V 1 50 Figure 34. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25°C 25°C 75°C 1 0.1 0 10 8 Figure 35. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 90 100 Figure 33. DC Current Gain 4 0 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 36. Input Voltage versus Output Current http://onsemi.com 11 50 10 NSBC114EPDXV6T1G, NSBC114EPDXV6T5G 180 1 IC/IB = 10 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114YPDXV6T1 PNP TRANSISTOR TA=-25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75°C VCE = 10 V 160 25°C 140 -25°C 120 100 80 60 40 20 0 80 1 2 4 6 Figure 37. VCE(sat) versus IC 100 TA=75°C 3.5 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 4 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 10 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 25°C TA=-25°C 75°C 1 0 10 8 10 Figure 40. Output Current versus Input Voltage 10 0.1 25°C -25°C 1 50 Figure 39. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 80 90 100 Figure 38. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 41. Input Voltage versus Output Current http://onsemi.com 12 NSBC114EPDXV6T1G, NSBC114EPDXV6T5G TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114TPDXV6T1 HFE, DC CURRENT GAIN (NORMALIZED) 1000 HFE, DC CURRENT GAIN (NORMALIZED) 1000 TA = 25°C VCE = 10 V VCE = 5.0 V 100 TA = 25°C VCE = 10 V VCE = 5.0 V 100 1.0 10 IC, COLLECTOR CURRENT (mA) 100 1.0 Figure 42. DC Current Gain − PNP 10 IC, COLLECTOR CURRENT (mA) 100 Figure 43. DC Current Gain − NPN TYPICAL ELECTRICAL CHARACTERISTICS − NSBC143TPDXV6T1 HFE, DC CURRENT GAIN (NORMALIZED) 1000 HFE, DC CURRENT GAIN (NORMALIZED) 1000 TA = 25°C VCE = 10 V VCE = 5.0 V 100 TA = 25°C VCE = 10 V VCE = 5.0 V 100 1.0 10 IC, COLLECTOR CURRENT (mA) 100 1.0 Figure 44. DC Current Gain − PNP 10 IC, COLLECTOR CURRENT (mA) Figure 45. DC Current Gain − NPN http://onsemi.com 13 100 NSBC114EPDXV6T1G, NSBC114EPDXV6T5G PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE F D −X− 6 5 1 e 2 A 4 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. L E −Y− DIM A b C D E e L HE HE b 65 PL 0.08 (0.003) C M X Y MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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