SPC4703 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC4703combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an DFN3X2-8L package. The Trench MOSFET is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. The Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. APPLICATIONS z Battery Powered System z DC/DC Buck Converter z Load Switch z Cell Phone FEATURES P-Channel -20V/-3.4A,RDS(ON)= 90mΩ@VGS=-4.5V -20V/-2.4A,RDS(ON)=120mΩ@VGS=-2.5V -20V/-1.7A,RDS(ON)=155mΩ@VGS=-1.8V Schottky VKA (V) = 20V, IF = 1A, VF<[email protected] Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN3X2-8L package design PIN CONFIGURATION( DFN3X2 – 8L ) PART MARKING 2008/05/15 Ver.1 Page 1 SPC4703 P-Channel Trench MOSFET with Schottky Diode PIN DESCRIPTION Pin Symbol Description 1 A Schottky Anode 2 A Schottky Anode 3 S MOSFET Source 4 G 5 D MOSFET Gate MOSFET Drain 6 D MOSFET Drain 7 K Schottky Cathode 8 K Schottky Cathode ORDERING INFORMATION Part Number Package Part SPC4703DF8RGB DFN3X2- 8L Marking SPC4703 ※ SPC4703DF8RGB : Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Typical Symbol P-Channel Unit Schottky Drain-Source Voltage VDSS -20 V Gate –Source Voltage VGSS ±12 V Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ ID Pulsed Drain Current IDM Schottky Reverse Voltage VKA Continuous Forward Current TA=25℃ TA=70℃ Pulsed Forward Current TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient 2008/05/15 Ver.1 A -2.8 -15 A 20 1 IF 0.7 IFM Continuous Source Current(Diode Conduction) Power Dissipation -3.5 IS PD 10 -1.4 1.25 0.9 0.8 0.6 TJ TSTG T ≤ 10sec Steady State RθJA -55/150 -55/150 65 95 V A A A W ℃ ℃ ℃/W Page 2 SPC4703 P-Channel Trench MOSFET with Schottky Diode ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit MOSFET Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=-250uA VGS(th) VDS=VGS,ID=-250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-Resistance Forward Transconductance RDS(on) gfs VDS=0V,VGS=±12V VDS=-20V,VGS=0V VDS=-20V,VGS=0V TJ=55℃ VDS≦-5V,VGS=-4.5V VGS=-4.5V,ID=-3.4A VGS=-2.5V,ID=-2.4A VGS=-1.8V,ID=-1.7A VGS=-1.25V,ID=-1.0A -20 -0.35 -0.8 ±100 -1 -5 -6 nA uA A 0.075 0.095 0.120 0.185 VDS=-5V,ID=-2.8A V 0.090 0.120 0.155 0.210 6 Ω S MOSFET Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time Turn-Off Time 4.8 VDS=-6V,VGS=-4.5V ID≡-2.8A td(off) nC 1.0 1.0 485 VDS=-6V,VGS=0V f=1MHz pF 85 40 td(on) tr 8 VDD=-6V,RL=6Ω ID≡-1.0A,VGEN=-4.5V RG=6Ω tf 10 16 13 23 18 25 15 20 0.43 0.47 ns Schottky Parameters Forward Voltage Drop VF IF =1A Reverse Breakdown Voltage VBR Maximum reverse leakage current Irm Junction Capacitance CT SchottkyReverse Recovery Time Trr IR = 500uA VR = 23V VR = 23V , TJ=70℃ VR = 10V VR = 0V , f=1MHz IF=1A, dI/dt=100A/μs Schottky Reverse Recovery Charge Qrr IF=1A, dI/dt=100A/μs 2008/05/15 Ver.1 20 V V 0.1 1 31 120 5.4 0.8 mA pF 10 ns nC Page 3 SPC4703 P-Channel Trench MOSFET with Schottky Diode TYPICAL CHARACTERISTICS ( P-Channel MOSFET ) 2008/05/15 Ver.1 Page 4 SPC4703 P-Channel Trench MOSFET with Schottky Diode TYPICAL CHARACTERISTICS ( P-Channel MOSFET ) 2008/05/15 Ver.1 Page 5 SPC4703 P-Channel Trench MOSFET with Schottky Diode TYPICAL CHARACTERISTICS ( P-Channel MOSFET ) 2008/05/15 Ver.1 Page 6 SPC4703 P-Channel Trench MOSFET with Schottky Diode TYPICAL CHARACTERISTICS ( Schottky ) 2008/05/15 Ver.1 Page 7 SPC4703 P-Channel Trench MOSFET with Schottky Diode DFN3X2-8L PACKAGE OUTLINE Top View Bottom View Side View 2008/05/15 Ver.1 Page 8 SPC4703 P-Channel Trench MOSFET with Schottky Diode Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2008/05/15 Ver.1 Page 9