SPN7510 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN7510 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES 100V/30A,RDS(ON)= 16mΩ@VGS= 10V 100V/16A,RDS(ON)= 21mΩ@VGS= 4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-220-3L package design APPLICATIONS z DC/DC Converter z Load Switch SMPS Secondary Side Synchronous Rectifier z PIN CONFIGURATION( TO-220-3L ) PART MARKING 2009/06/15 Ver.1 Page 1 SPN7510 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 G Gate 2 D 3 S Drain Source ORDERING INFORMATION Part Number Package SPN7510T220TGB TO-220-3L Part Marking SPN7510 ※ SPN7510T220TGB : Tube ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 100 V Gate –Source Voltage VGSS ±20 V Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current ID 72 45 A IDM 240 A PD 130 3.38 W EAS 335 mJ TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 2 ℃/W Power Dissipation TA=25℃ TA=70℃ Avalanche Energy with Single Pulse ( Tj=25℃, L = 0.12mH , IAS = 75A , VDD = 80V. ) Operating Junction Temperature 2009/06/15 Ver.1 Page 2 SPN7510 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. V(BR)DSS VGS=0V,ID=250uA 100 Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS Drain-Source On-Resistance RDS(on) 1.0 3.0 VDS=0V,VGS=±20V VDS=100V,VGS=0V VDS=80V,VGS=0V TJ = 150 °C VGS= 10V,ID=30A ±100 10 VGS= 4.5V,ID=16A 21 Forward Transconductance gfs VDS=10V,ID=30A Diode Forward Voltage VSD IS=30A,VGS =0V 100 16 52 V nA uA mΩ S 1.3 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 605 td(on) 12 Turn-On Time Turn-Off Time 2009/06/15 Ver.1 tr td(off) tf VDS=80V,VGS=4.5V ID= 30A 69 111 nC 12 39 VDS=25VGS=0V f=1MHz VDD=50V,RL=1.6Ω ID≡30A,VGEN=10V RG=10Ω 5690 540 75 220 9100 pF nS 250 Page 3 SPN7510 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/06/15 Ver.1 Page 4 SPN7510 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/06/15 Ver.1 Page 5 SPN7510 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/06/15 Ver.1 Page 6 SPN7510 N-Channel Enhancement Mode MOSFET TO-220-3L PACKAGE OUTLINE 2009/06/15 Ver.1 Page 7 SPN7510 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2009/06/15 Ver.1 Page 8