SPN8878B N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8878B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8878B has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. FEATURES 30V/20A,RDS(ON)= 14mΩ@VGS=10V 30V/15A,RDS(ON)= 19mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252 and TO-251 package design APPLICATIONS z Power Management in Note book z Powered System z DC/DC Converter z Load Switch PIN CONFIGURATION TO-252 TO-251 PART MARKING TO-252 2011/09/27 Ver.5 TO-251 Page 1 SPN8878B N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 G Gate 2 S Source 3 D Drain ORDERING INFORMATION Part Number Package Part SPN8878BT252RGB TO-252 SPN8878BT251TGB TO-251 ※ SPN8878BT252RGB : Tape Reel ; Pb – Free ; Halogen - Free ※ SPN8878BT251TGB : Tube ; Pb – Free ; Halogen - Free Marking SPN8878B SPN8878B ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate –Source Voltage VGSS ±20 V Continuous Drain Current TA=25℃ ID TA=100℃ Pulsed Drain Current Continuous Drain Current TA=25℃ TO-251 Avalanche Energy with Single Pulse ( Tj=25℃, L = 0.14mH , IAS = 30A , VDD = 20V. ) 13 A IDM 40 A IS 5 A TO-252-2L Power Dissipation 18 40 PD 55 W EAS 63 mJ TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 100 ℃/W Operating Junction Temperature 2011/09/27 Ver.5 Page 2 SPN8878B N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) VDS≥5V,VGS =10V Forward Transconductance gfs Diode Forward Voltage VSD IS=40A,VGS =0V RDS(on) 0.6 1.8 VDS=0V,VGS=±20V VDS=24V,VGS=0V VDS=24V,VGS=0V TJ=55℃ VGS= 10V,ID=20A VGS=4.5V,ID=15A VDS=15V,ID=20A Drain-Source On-Resistance 30 ±100 1 5 40 V nA uA A 0.012 0.015 0.014 0.019 15 Ω S 0.8 1.5 10 18 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time Turn-Off Time 2011/09/27 Ver.5 VDS=15V,VGS=10V ID= 50A 2.0 VDS=15VGS=0V f=1MHz td(on) tr td(off) tf nC 2.8 VDD=15V,RL=0.3Ω ID≡50A,VGEN=10V RG=1Ω 850 pF 158 120 10 15 4 12 15 30 10 15 Page 3 nS SPN8878B N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2011/09/27 Ver.5 Page 4 SPN8878B N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2011/09/27 Ver.5 Page 5 SPN8878B N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2011/09/27 Ver.5 Page 6 SPN8878B N-Channel Enhancement Mode MOSFET TO-252 PACKAGE OUTLINE 2011/09/27 Ver.5 Page 7 SPN8878B N-Channel Enhancement Mode MOSFET TO-251 PACKAGE OUTLINE 2011/09/27 Ver.5 Page 8 SPN8878B N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2011/09/27 Ver.5 Page 9