SSG4910N 10 A, 30 V, RDS(ON) 13.5 m Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. SOP-8 B L D M FEATURES A Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. N J H PACKAGE INFORMATION REF. Package MPQ LeaderSize SOP-8 2.5K 13’ inch C A B C D E F G G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. K E F REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S D G D S D G D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage TA = 25°C Continuous Drain Current 1 TA = 70°C Pulsed Drain Current 2 Symbol Ratings Unit VDS 30 V VGS ±20 V ID 10 A ID 8.2 50 A IDM Continuous Source Current (Diode Conduction) 1 TA = 25°C Total Power Dissipation 1 TA = 70°C Operating Junction & Storage Temperature Range A IS 2.3 A PD 2.1 W PD 1.3 W TJ, TSTG -55 ~ 150 °C THERMAL RESISTANCE RATINGS Maximum Junction to Case 1 Maximum Junction to Ambient 1 t ≦ 5 sec RθJC 40 °C / W t ≦ 5 sec RθJA 60 °C / W Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 06-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SSG4910N 10 A, 30 V, RDS(ON) 13.5 m Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit - V Test conditions Static Drain-Source Breakdown Voltage Gate-Threshold Voltage V(BR)DSS 30 - VGS= 0V, ID= 250μA VGS(th) 1 - - V VDS= VGS, ID= 250μA Gate-Body Leakage IGSS - - ±100 nA VDS= 0V, VGS= 20V Zero Gate Voltage Drain Current IDSS On-State Drain Current 1 ID(on) Drain-Source On-Resistance 1 Forward Transconductance RDS(ON) 1 Diode Forward Voltage Pulsed Source Current(BodyDiode) 1 - - 1 μA VDS= 24V, VGS= 0V - - 25 μA VDS= 24V, VGS= 0V, TJ= 55°C 20 - - A - - 13.5 - - 20 - - 15 VGS= 10V, ID= 15A, TJ= 55°C - 40 - S VDS= 15V, ID= 10A - 0.7 - V IS= 2.3A, VGS= 0V ISM - 5 - A 2 Qg - 20 - Gate-Source Charge Qgs - 7.0 - Gate-Drain Charge Qgd - 7.0 - Turn-On Delay Time Td(on) - 20 - Tr - 9 - Td(off) - 70 - Tf - 20 - Fall Time VGS= 4.5V, ID= 8A gfs Total Gate Charge Turn-Off Delay Time mΩ VSD Dynamic Rise Time VDS= 5V, VGS= 10V VGS= 10V, ID= 10A nC ID= 10A VDS= 15V VGS= 5V nS VDD= 25V ID= 1A VGEN= 10V RL= 25Ω Notes: 1 Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 06-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SSG4910N Elektronische Bauelemente 10 A, 30 V, RDS(ON) 13.5 m Dual-N Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 06-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SSG4910N Elektronische Bauelemente 10 A, 30 V, RDS(ON) 13.5 m Dual-N Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 06-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4