SSG4940NC 8.3A , 40V , RDS(ON) 23 m Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(ON) and to ensure minimal power loss and heat dissipation. B L FEATURES D M Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. A N J H APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones REF. A B C D E F G PACKAGE INFORMATION Package MPQ Leader Size SOP-8 2.5K 13 inch C G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. K F REF. H J K L M N E Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S D G D S D G D ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 1 TA=25°C TA=70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Power Dissipation 1 1 TA=25°C TA=70°C Operating Junction & Storage Temperature Range ID 8.3 6.8 A IDM 50 A IS 3.1 A PD TJ, TSTG 2.1 1.3 W -55~150 °C 62.5 °C / W 110 °C / W Thermal Resistance Rating Maximum Junction to Ambient 1 t ≦ 10 sec Steady State RθJA Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 20-Feb-2012 Rev. B Any changes of specification will not be informed individually. Page 1 of 4 SSG4940NC 8.3A , 40V , RDS(ON) 23 m Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Static Gate-Threshold Voltage VGS(th) 1 - - V VDS=VGS, ID=250μA Gate-Body Leakage IGSS - - ±100 nA VDS=0, VGS=±20V Zero Gate Voltage Drain Current IDSS - - 1 μA VDS=32V, VGS=0 - - 25 μA VDS=32V, VGS=0, TJ=55°C 15 - - A VDS=5V, VGS=10V - - 23 - - 30 gfs - 15 - S VDS=15V, ID=6.6A Diode Forward Voltage VSD - 0.74 - V IS=1.6A, VGS=0 Gate Resistance Rg Ω f=1.0MHz pF VDS=15V, VGS=0, f=1MHz nC ID=6.6A VDS=20V VGS=4.5V nS VDs=20V ID=6.6A VGEN=10V RL=3.1Ω RGEN=6Ω On-State Drain Current 1 ID(on) Drain-Source On-Resistance 1 Forward Transconductance 1 RDS(ON) 1.4 mΩ VGS=10V, ID=6.6A VGS=4.5V, ID=5.6A Dynamic 2 Input Capacitance Ciss 1389 Output Capacitance Coss 169 Reverse Transfer Capacitance Crss 134 Total Gate Charge Qg - 13 - Gate-Source Charge Qgs - 3.4 - Gate-Drain Charge Qgd - 7 - Turn-On Delay Time Td(on) - 8 - Tr - 10 - Td(off) - 37 - Tf - 16 - Rise Time Turn-Off Delay Time Fall Time Notes: 1 Pulse test：PW≦300μs duty cycle≦2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 20-Feb-2012 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 SSG4940NC Elektronische Bauelemente 8.3A , 40V , RDS(ON) 23 m Dual-N Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 20-Feb-2012 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 SSG4940NC Elektronische Bauelemente 8.3A , 40V , RDS(ON) 23 m Dual-N Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 20-Feb-2012 Rev. B Any changes of specification will not be informed individually. Page 4 of 4