SDF920NE 11A, 20V, RDS(ON) 22 m Dual N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION DFN2x5 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers,. printers, PCMCIA cards, cellular and cordless telephones E C H B D G FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DFN2x5 saves board space Fast switching speed High performance trench technology F A N O PACKAGE INFORMATION I Package MPQ Leader Size DFN2x5 5K 13’ inch L J K M REF. A B C D E F G H 2KV Millimeter Min. Max. 0.70 0.80 0.00 0.06 0.10 0.20 0° 12° 5.00 BSC 4.50 BSC 0.50 BSC 0.20 0.30 REF. I J K L M N O Millimeter Min. Max. 2.00 BSC 1.30 1.55 2.60 2.86 1.67 BSC 0.15 BSC 0.40 0.60 0.00 0.10 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V 11 A 8.5 A TA = 25°C Continuous Drain Current 1 Pulsed Drain Current TA = 70°C 2 Continuous Source Current (Diode Conduction) 1 TA = 25°C Total Power Dissipation 1 TA = 70°C Operating Junction & Storage Temperature Range ID IDM ±40 A IS 3.1 A PD TJ, TSTG 3.5 W 1.8 W -55~150 °C 36 °C / W 76 °C / W Thermal Resistance Ratings Maximum Junction-to-Ambient 1 t≦10 sec Steady State RθJA Notes 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 20-Apr-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SDF920NE 11A, 20V, RDS(ON) 22 m Dual N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Condition Static Gate Threshold Voltage VGS(th) 0.5 - - V VDS=VGS, ID=250μA Gate-Body Leakage Current IGSS - - ±10 μA VDS=0, VGS= ±12V Zero Gate Voltage Drain Current IDSS - - 1 - - 30 On-State Drain Current 1 ID(on) 20 - - 10 18 22 RDS(ON) 10.5 19 23 11 23 28 - 22 0.7 - S V nC ID=6A, VDS=10V, VGS=4.5V nS VDD=10V, VGEN=4.5V ID=1A, RL=15Ω Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage gfs VSD μA A VDS=16V, VGS=0 VDS=16V, VGS=0, TJ=55°C VDS=5V, VGS=4.5V VGS=4.5V, ID=6.7A mΩ VGS=4V, ID=5.6A VGS=2.5V, ID=4.5A VDS=15V, ID=6A IS=0.5A, VGS=0 Dynamic 2 Total Gate Charge Gate-Source Charge Qg Qgs - 9.2 1.9 - Gate-Drain Charge Qgd - 2.8 - Turn-On Delay Time Td(on) - 1.7 - Rise Time Turn-Off Delay Time Fall Time Tr - 2.3 - Td(off) - 1.1 - Tf - 4.4 - Notes 1. Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 20-Apr-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SDF920NE Elektronische Bauelemente 11A, 20V, RDS(ON) 22 m Dual N-Ch Enhancement Mode Power MOSFET RATINGS AND CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 20-Apr-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SDF920NE Elektronische Bauelemente 11A, 20V, RDS(ON) 22 m Dual N-Ch Enhancement Mode Power MOSFET RATINGS AND CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 20-Apr-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4