SSM6K08FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) SSM6K08FU High Speed Switching Applications • Small package • Low on resistance: Unit: mm Ron = 105 mΩ (max) (@VGS = 4 V) Ron = 140 mΩ (max) (@VGS = 2.5 V) • High-speed switching: ton = 16 ns (typ.) toff = 15 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ±12 V DC ID 1.6 Pulse IDP 3.2 PD (Note 1) 300 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain current Drain power dissipation Note: A JEDEC ― JEITA ― Using continuously under heavy loads (e.g. the application of TOSHIBA 2-2J1D high temperature/current/voltage and the significant change in Weight: 6.8 mg (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm × 6) Marking 6 Figure 1. Equivalent Circuit (top view) 5 4 6 5 4 3 1 2 3 KDC 1 2 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2007-11-01 SSM6K08FU Electrical Characteristics (Ta = 25°C) Characteristics Symbol Gate leakage current Min Typ. Max Unit VGS = ±12 V, VDS = 0 ⎯ ⎯ ±1 μA V (BR) DSS ID = 1 mA, VGS = 0 20 ⎯ ⎯ V (BR) DSX ID = 1 mA, VGS = −12 V 12 ⎯ ⎯ IGSS Drain-Source breakdown voltage Drain cut-off current IDSS Gate threshold voltage Vth Forward transfer admittance Drain-Source ON resistance ⏐Yfs⏐ RDS (ON) Test Condition V VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μA VDS = 3 V, ID = 0.1 mA 0.5 ⎯ 1.2 V S VDS = 3 V, ID = 0.8 A (Note2) 2.0 ⎯ ⎯ ID = 0.8 A, VGS = 4 V (Note2) ⎯ 77 105 ID = 0.8 A, VGS = 2.5 V (Note2) ⎯ 100 140 ID = 0.8 A, VGS = 2.0 V (Note2) ⎯ 125 210 mΩ Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 306 ⎯ pF Reverse transfer capacitance Crss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 44 ⎯ pF Output capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 74 ⎯ pF Switching time Turn-on time ton VDD = 10 V, ID = 0.8 A, ⎯ 16 ⎯ Turn-off time toff VGS = 0~2.5 V, RG = 4.7 Ω ⎯ 15 ⎯ ns Note2: Pulse test Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V OUT 2.5 V 90% IN 0V RG 0 10 μs VDD (c) VOUT VDD = 10 V RG = 4.7 Ω D.U. < = 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C 10% VDD VDS (ON) 10% 90% tr ton tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. 2 2007-11-01 SSM6K08FU ID – VDS ID – VGS 4 10000 Common Source Ta = 100°C 1000 (mA) 3 Drain current ID (A) Drain current ID Common Source Ta = 25°C 4 V 2.5 V 2.0 V VDS = 3 V 1.7 V 2 1.6 V 1.5 V 1 100 25°C −25°C 10 1 0.1 1.4 V VGS = 1.3 V 0 0 0.5 1 1.5 Drain-Source voltage 0.01 0 2 0.4 VDS (V) 0.8 Gate-Source voltage RDS (ON) – ID 2 VGS (V) 400 Common Source ID = 0.8 A Ta = 25°C 160 Common Source VGS = 2.0 V 120 Drain-Source on resistance RDS (ON) (mΩ) Drain-Source on resistance RDS (ON) (mΩ) 1.6 RDS (ON) – Ta 200 2.5 V 4.0 V 80 40 0 0 1 2 300 200 VGS = 2.0 V 2.5 V 4V 100 0 −25 3 0 25 Drain current ID (A) 50 75 100 125 150 Ambient temperature Ta (°C) RDS (ON) – VGS IDR – VDS 400 4 Common Source ID = 0.8 A VGS = 0 Common Source Ta = 25°C (A) 300 Drain current IDR Drain-Source on resistance RDS (ON) (mΩ) 1.2 200 25°C Ta = 100°C 100 D 3 IDR G S 2 1 −25°C 0 0 2 4 6 Gate-Source voltage 8 10 0 0 12 VGS (V) −0.2 −0.4 −0.6 Drain-Source voltage 3 −0.8 VDS −1.0 −1.2 (V) 2007-11-01 SSM6K08FU |Yfs| – ID Vth – Ta 10 VDS = 3 V ID = 0.1 mA Forward transfer admittance |Yfs| (S) Gate threshold voltage Vth (V) 2 Common Source 1.5 1 VDS = 3 V 3 Common Source Ta = 25°C 1 0.3 0.1 0.03 0.5 0.01 1 0 −25 3 30 10 300 100 3000 10000 1000 Drain current ID (mA) 0 25 50 75 100 125 150 Ambient temperature Ta (°C) Switching Time 1000 C – VDS 1000 Common Source VDD = 10 V 100 toff 30 tf ton 10 Ciss (pF) Rg = 4.7 Ω Ta = 25°C Capacitance C Switching time t (ns) 500 VGS = 0~2.5 V 300 100 Crss Common Source 10 tr Coss 50 VGS = 0 f = 1 MHz Ta = 25°C 3 5 0.1 1 10 0.5 1 5 10 Drain-Source voltage 30 100 30 1000 300 50 VDS 100 (V) 10000 Drain current ID (mA) Dynamic Input Characteristic 10 PD – Ta 350 Common Source Mounted on FR4 board (mW) 8 ID= 1.6 A Ta = 25°C Power dissipation PD Gate-Source voltage VGS (V) VDD = 16 V 6 4 2 300 (25.4 mm × 25.4 mm × 1.6 t, 2 Cu pad: 0.32 mm × 6) 250 Figure 1 200 150 100 50 0 0 2 4 6 0 0 8 Total gate charge Qg (nC) 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 4 2007-11-01 SSM6K08FU Safe Operating Area 10 ID max (pulse) * 3 1 ms 10 ms ID max (continuous) 100 ms 0.3 DC operation Ta = 25°C 0.1 Mounted on FR4 board 0.03 (25.4 mm × 25.4 mm × 1.6 t 2 Cu pad: 0.32 mm × 6) Figure 1 0.01 * Single non-repetitive 0.003 0.001 0.1 pulsed Ta = 25°C Curves must be derated linearly with increase in temperature. 0.3 1 3 Drain-Source voltage 10 30 100 VDS (V) 0.4 mm 0.8 mm Drain current ID (A) 1 25.4 mm × 25.4 mm × 1.6 t, 2 Cu Pad: 0.32 mm × 6 Figure 1 5 2007-11-01 SSM6K08FU RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01