TOSHIBA SSM6K22FE

SSM6K22FE
TOSHIBA Field Effect Transistor
Silicon N Channel MOS Type (U-MOSⅢ)
SSM6K22FE
High Current Switching Applications
DC-DC Converter
Unit: mm
•
Suitable for high-density mounting due to compact package
•
Low on resistance:
Ron = 170 mΩ (max) (@VGS = 4.0 V)
Ron = 230 mΩ (max) (@VGS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
20
V
Gate-Source voltage
VGSS
±12
V
DC
ID
1.4
Pulse
IDP
5.6
PD
(Note 1)
500
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Drain current
Drain power dissipation
Note:
1,2,5,6 : Drain
3
: Gate
4
: Source
A
mW
JEDEC
-
JEITA
-
TOSHIBA
2-2N1A
Using continuously under heavy loads (e.g. the application of
Weight: 3 mg (typ.)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
Marking
6
Equivalent Circuit (Top View)
5
4
6
5
4
3
1
2
3
KD
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
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SSM6K22FE
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Gate leakage current
IGSS
V (BR) DSS
Drain-Source breakdown voltage
V (BR) DSX
Drain cut-off current
IDSS
Gate threshold voltage
Vth
Forward transfer admittance
⏐Yfs⏐
Drain-Source on-resistance
RDS (ON)
Test Condition
Min
Typ.
Max
Unit
−
−
±1
μA
20
−
−
12
−
−
−
−
1
μA
0.4
−
1.1
V
1.4
2.8
−
S
−
150
170
(注 2)
−
190
230
VGS = ±12 V, VDS = 0
ID = 1 mA, VGS = 0
ID = 1 mA, VGS = -12 V
VDS =20 V, VGS = 0
VDS = 3 V, ID = 0.1 mA
VDS = 3 V, ID = 0.6A
ID = 0.7 A, VGS = 4 V
ID = 0.7 A, VGS = 2.5 V
(注 2)
(注 2)
V
mΩ
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
−
125
−
pF
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
−
17
−
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0, f = 1 MHz
−
42
−
pF
Switching time
Turn-on time
ton
VDD = 10 V, ID = 0.7 A
−
15.5
−
Turn-off time
toff
VGS = 0~2.5 V, RG = 4.7 Ω
−
8.5
−
ns
Note2: Pulse test
Switching Time Test Circuit
(a) Test Circuit
2.5 V
(b) VIN
0V
RG
10 μs
90%
OUT
IN
0
2.5 V
(c) VOUT
10%
VDD
90%
VDD
10%
VDS (ON)
VDD = 10 V
RG = 4.7 Ω
< 1%
D.U. =
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
tr
ton
tf
toff
Precaution
Vth can be expressed as the voltage between the gate and source when the low operating current value is ID =
-1mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off)
requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Be sure to take this into consideration when using the device.
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ID - V G S
ID - V D S
2.5
10000
4.0V
2.0
1000
2.0V
Drain current I D (mA)
Drain current I D (mA)
Common Source
VDS =3V
Common Source
Ta=25℃
2.5V
1.5
VGS =1.8V
1.0
100
Ta=85℃
25℃
10
1
-25℃
0.5
0.1
0.0
0.01
0.0
0.5
1.0
1.5
2.0
0
1
2
3
R D S(O N) - V G S
R D S (O N) - I D
0.5
500
Common Source
Ta=25℃
Common Source
I D=0.7A
0.4
300
200
2.5V
VGS =4.0V
R DS(ON) (Ω)
Drain-Source on-resistance
R DS(ON) (mΩ)
Drain-Source on-resistance
400
0.3
25℃
0.2
Ta=85℃
0.1
100
-25℃
0
0
0
0.5
1
1.5
2
0
2.5
2
Drain current I D (A)
4
6
8
Gate-Source voltage V GS (V)
V th - Ta
R D S (O N) - Ta
2
0.5
Common Source
I D=0.7A
0.4
1.8
Common Source
I D=0.1mA
1.6
VDS =3V
Gate threshold voltage
Vth(V)
1.4
R DS(ON) (Ω)
Drain-Source on-resistance
4
Gate-Source voltage V GS (V)
Drain-Source voltage V DS (V)
0.3
2.5V
0.2
4.0V
0.1
1.2
1
0.8
0.6
0.4
0.2
0
0
-25
0
25
50
75
100
125
-25
150
0
25
50
75
100
125
150
Ambient temperture Ta (℃)
Ambient temperture Ta (℃)
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SSM6K22FE
|Yfs| - ID
C - VDS
100
1000
10
Capacitance C (pF)
Forward transfer admittance |Yfs| (S)
Common Source
VDS=-3V
Ta=25℃
1
C iss
100
C oss
C rss
10
Common Source
VGS =0V
f=1MHz
Ta=25℃
0.1
1
0.01
0.001
0.01
0.1
1
0.1
10
1
ID R - V D S
100
t - ID
2.5
1000
Common Source
VDD=10V
Common Source
VGS =0
Ta=25℃
2
Drain reverse current I DR (mA)
10
Drain-Source voltage V DS (V)
Drain current ID (A)
VGS =0～2.5V
Ta=25℃
toff
100
Switching time t (ns)
tf
1.5
1
ton
tr
10
1
0.5
0
0
-0.2
-0.4
-0.6
-0.8
0.1
0.01
-1
Drain-Source voltage V DS (V)
0.1
1
10
Drain current I D (A)
Dyn a mic In p u t Ch a racteristic
10
Common Source
VDD=10V
I D=1.4A
Ta=25℃
Gate-Source voltage V GS (V)
8
6
4
2
0
0
0.5
1
1.5
2
2.5
3
3.5
Tatal gate charge Q g (nC)
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SSM6K22FE
S a fe o p era tin g area
10
I D max (Pulsed) *
1ms
1
10ms
Drain current I D (A)
I D max
(Continuous)
100ms
DC operation
Ta=25℃
0.1
Mounted on FR4 board
(25.4 mm ・ 25.4 mm ・ 1.6 t
Cu pad: 645 mm2 )
*:Single nonrepetive Pulse
Ta ・ 25°C
Curves must be derated linealy
with increase in temperture.
0.01
0.001
0.1
1
10
100
Drain-Source voltage V DS (V)
P D - Ta
600
FR4基板実装時
(25.4mm×25.4mm×1.6t)
Cu pad：645mm2
Drain power dissipation　P D (mW)
500
400
300
200
100
0
0
20
40
60
80
100
120
140
Ambient temperature Ta (℃)
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SSM6K22FE
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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