SSM9928(G)EO
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Low on-resistance
Capable of 2.5V gate drive
G2
S2
Ideal for DC/DC battery applications
D2
BV DSS
20V
RDS(ON)
23mΩ
5A
ID
S2
TSSOP-8
S1
G1
S1
D1
Description
D1
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G1
D2
G2
S1
S2
This device is available with Pb-free lead finish (second-level interconnect) as SSM9928GEO.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±12
V
3
ID @ TA=25°C
Drain Current , VGS @ 4.5V
5
A
ID @ TA=70°C
3
3.5
A
Drain Current , VGS @ 4.5V
1
IDM
Pulsed Drain Current
25
A
PD @ TA=25°C
Total Power Dissipation
1
W
Linear Derating Factor
0.008
W/°C
TSTG
Storage Temperature Range
-55 to 150
°C
TJ
Operating Junction Temperature Range
-55 to 150
°C
Thermal Data
Symbol
Rthj-a
Rev.2.01 12/06/2004
Parameter
Thermal Resistance Junction-ambient
3
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Max.
Value
Unit
125
°C/W
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SSM9928(G)EO
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
20
-
-
V
-
0.02
-
V/°C
VGS=4.5V, ID=5A
-
-
23
mΩ
VGS=2.5V, ID=2A
-
-
29
mΩ
0.5
-
-
V
VDS=10V, ID=5A
-
21
-
S
Drain-Source Leakage Current (Tj=25 C)
VDS=20V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=20V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±12V
-
-
±10
uA
ID=5A
-
15.9
-
nC
BVDSS
Drain-Source Breakdown Voltage
∆ BV DSS/ ∆ Tj
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IGSS
2
VDS=VGS, ID=250uA
o
IDSS
VGS=0V, ID=250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=10V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7.4
-
nC
VDS=10V
-
6.2
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω ,VGS=4.5V
-
30
-
ns
tf
Fall Time
RD=10Ω
-
11
-
ns
Ciss
Input Capacitance
VGS=0V
-
530
-
pF
Coss
Output Capacitance
VDS=20V
-
245
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
125
-
pF
Min.
Typ.
VD=VG=0V,VS=1.2V
-
-
0.83
A
Tj=25°C,IS=5A,VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
IS
VSD
Parameter
Continuous Source Current ( Body Diode )
2
Forward On Voltage
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 208°C/W when mounted on Min. copper pad.
Rev.2.01 12/06/2004
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SSM9928(G)EO
30
30
4.5V
3.5V
3.0V
2.5V
ID , Drain Current (A)
ID , Drain Current (A)
4.5V
3.5V
3.0V
2.5V
20
V GS =2.0V
10
20
V GS =2.0V
10
T C =150 o C
T C =25 o C
0
0
0
1
2
3
0
4
1
2
3
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
95
1.9
I D = 5A
I D = 5A
V GS = 4.5V
T C =25 o C
1.5
RDS(ON) (mΩ )
Normalized R DS(ON)
65
35
1.1
0.7
0.3
5
1
2
3
4
5
6
-50
0
100
150
T j , Junction Temperature ( C)
Fig 3. On-Resistance vs. Gate Voltage
Rev.2.01 12/06/2004
50
o
V GS (V)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
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SSM9928(G)EO
1.2
6
5
4
PD (W)
ID , Drain Current (A)
0.9
3
0.6
2
0.3
1
0
0
25
50
75
100
125
150
0
50
100
150
T c , Case Temperature ( o C)
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current vs.
Case Temperature
Fig 6. Typical Power Dissipation
100
1
Normalized Thermal Response (R thja)
Duty Factor = 0.5
100us
10
ID (A)
1ms
10ms
1
100ms
0.1
1s
T C =25 o C
Single Pulse
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak Tj = P DM x Rthja + Ta
Rthja=208 oC/W
DC
0.001
0.01
0.1
1
10
100
0.0001
0.001
V DS (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Rev.2.01 12/06/2004
0.01
Fig 8. Effective Transient Thermal Impedance
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SSM9928(G)EO
f=1.0MHz
10000
8
I D =5A
VGS , Gate to Source Voltage (V)
7
6
V DS =10V
V DS =15V
V DS =20V
1000
Ciss
C (pF)
5
4
Coss
Crss
3
100
2
1
10
0
0
5
10
15
20
1
25
7
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
1.6
10
1.2
T j =25 o C
VGS(th) (V)
IS (A)
19
25
Fig 10. Typical Capacitance Characteristics
100
T j =150 o C
13
V DS (V)
1
0.8
0.4
0.1
0
0.01
0.2
0.5
0.8
1.1
-50
0
50
100
150
Junction Temperature ( o C )
V SD (V)
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage vs.
Reverse Diode
Rev.2.01 12/06/2004
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Junction Temperature
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SSM9928(G)EO
VDS
RD
90%
VDS
D
RG
G
TO THE
OSCILLOSCOPE
0.5 x RATED VDS
10%
VGS
S
+
VGS
4.5V
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
QG
TO THE
OSCILLOSCOPE
D
4.5V
G
0.5 x RATED VDS
S
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
Rev.2.01 12/06/2004
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