SSM9973GH,J
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low gate-charge
D
Simple drive requirement
Fast switching
BV DSS
60V
R DS(ON)
80mΩ
14A
ID
G
S
Description
G D
S
The SSM9973GH is in a TO-252 package, which is widely used for
commercial and industrial surface mount applications, and is well suited
for low voltage applications such as DC/DC converters. The through-hole
version, the SSM9973GJ in TO-251, is available for low-footprint vertical
mounting. These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
G
Pb-free lead finish (second-level interconnect)
D
S
TO-252 (H)
TO-251 (J)
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
ID @ TA=25°C
Continuous Drain Current, VGS @ 10V
14
A
ID @ TA=100°C
Continuous Drain Current, VGS @ 10V
9
A
1
IDM
Pulsed Drain Current
40
A
PD @ TA=25°C
Total Power Dissipation
27
W
Linear Derating Factor
0.22
W/°C
TSTG
Storage Temperature Range
-55 to 150
°C
TJ
Operating Junction Temperature Range
-55 to 150
°C
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
4.5
°C/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
°C/W
2/16/2005 Rev.2.2
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SSM9973GH,J
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
60
-
-
V
BVDSS
Drain-Source Breakdown Voltage
∆ BV DSS/∆ Tj
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
-
0.05
-
V/°C
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=9A
-
-
80
mΩ
VGS=4.5V, ID=6A
-
-
100
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=9A
-
8.6
-
S
VDS=60V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=48V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ± 20V
-
-
±100
nA
ID=9A
-
8
13
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
VGS=0V, ID=250uA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
VDS=30V
-
7
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=9A
-
15
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω ,VGS=10V
-
16
-
ns
tf
Fall Time
RD=3.3Ω
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
720
1150
pF
Coss
Output Capacitance
VDS=25V
-
77
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
45
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=14A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=9A, VGS=0V,
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
27
-
nC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
2/16/2005 Rev.2.2
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SSM9973GH,J
45
32
T C =25 C
35
ID , Drain Current (A)
28
10V
7.0V
5.0V
4.5V
30
24
ID , Drain Current (A)
40
25
20
15
10
20
16
12
V G =3.0V
8
V G =3.0V
4
5
0
0
0
1
2
3
4
5
0
6
1
V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
7
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
90
I D =9A
ID=9A
o
T C =25 C
V G =10V
2.0
Normalized RDS(ON)
85
RDS(ON) (mΩ )
10V
7.0V
5.0V
4.5V
T C =150 o C
o
80
75
1.5
1.0
0.5
70
0.0
65
3
5
7
9
-50
11
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
2.5
14
12
2
IS(A)
8
VGS(th) (V)
10
T j =25 o C
o
T j =150 C
6
1.5
1
4
0.5
2
0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of the
Reverse Diode
2/16/2005 Rev.2.2
1.4
-50
0
50
100
150
o
T j ,Junction Temperature ( C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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SSM9973GH,J
f=1.0MHz
10000
12
V DS =48V
V DS =38V
V DS =30V
8
1000
Ciss
C (pF)
VGS , Gate to Source Voltage (V)
ID=9A
10
6
4
100
Coss
Crss
2
0
10
0
4
8
12
16
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (R thjc)
1
1ms
ID (A)
10
10ms
100ms
1s
DC
1
T C =25 o C
Single Pulse
0.1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
2/16/2005 Rev.2.2
Charge
Q
Fig 12. Gate Charge Waveform
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SSM9973GH,J
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
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