SST SST49LF020A-33-4C-WHE

2 Mbit LPC Flash
SST49LF020A
SST49LF020A2Mb LPC Flash
Data Sheet
FEATURES:
• LPC Interface Flash
– SST49LF020A: 256K x8 (2 Mbit)
• Conforms to Intel LPC Interface Specification 1.0
• Flexible Erase Capability
– Uniform 4 KByte Sectors
– Uniform 16 KByte overlay blocks
– Top Boot Block protection: 16 KByte
– Chip-Erase for PP Mode Only
• Single 3.0-3.6V Read and Write Operations
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption
– Active Read Current: 6 mA (typical)
– Standby Current: 10 µA (typical)
• Fast Sector-Erase/Byte-Program Operation
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time: 4 seconds (typical)
– Single-pulse Program or Erase
– Internal timing generation
• Two Operational Modes
– Low Pin Count (LPC) Interface mode for
in-system operation
– Parallel Programming (PP) Mode for fast production
programming
• LPC Interface Mode
– 5-signal communication interface supporting
byte Read and Write
– 33 MHz clock frequency operation
– WP# and TBL# pins provide hardware write protect
for entire chip and/or top boot block
– Standard SDP Command Set
– Data# Polling and Toggle Bit for End-of-Write
detection
– 5 GPI pins for system design flexibility
– 4 ID pins for multi-chip selection
• Parallel Programming (PP) Mode
– 11-pin multiplexed address and 8-pin data
I/O interface
– Supports fast programming In-System on
programmer equipment
• CMOS and PCI I/O Compatibility
• Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
• All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST49LF020A flash memory device is designed to
interface with the LPC bus for PC and Internet Appliance
application in compliance with Intel Low Pin Count (LPC)
Interface Specification 1.0. Two interface modes are supported: LPC mode for in-system operations and Parallel
Programming (PP) mode to interface with programming
equipment.
The SST49LF020A flash memory device is manufactured
with SST’s proprietary, high-performance SuperFlash
Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability
compared with alternate approaches. The SST49LF020A
device significantly improves performance and reliability,
while lowering power consumption. The SST49LF020A
device writes (Program or Erase) with a single 3.0-3.6V
power supply. It uses less energy during Erase and Program than alternative flash memory technologies. The total
energy consumed is a function of the applied voltage, current and time of application. For any give voltage range, the
SuperFlash technology uses less current to program and
©2006 Silicon Storage Technology, Inc.
S71206-08-000
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1
has a shorter erase time; the total energy consumed during
any Erase or Program operation is less than alternative
flash memory technologies. The SST49LF020A product
provides a maximum Byte-Program time of 20 µsec. The
entire memory can be erased and programmed byte-bybyte typically in 4 seconds when using status detection features such as Toggle Bit or Data# Polling to indicate the
completion of Program operation. The SuperFlash technology provides fixed Erase and Program time, independent
of the number of Erase/Program cycles that have performed. Therefore the system software or hardware does
not have to be calibrated or correlated to the cumulative
number of Erase cycles as is necessary with alternative
flash memory technologies, whose Erase and Program
time increase with accumulated Erase/Program cycles.
To meet high density, surface mount requirements, the
SST49LF020A device is offered in 32-lead TSOP and 32lead PLCC packages. See Figures 2 and 3 for pin assignments and Table 1 for pin descriptions.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
Intel is a registered trademark of Intel Corporation.
These specifications are subject to change without notice.
2 Mbit LPC Flash
SST49LF020A
Data Sheet
TABLE OF CONTENTS
PRODUCT DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
LIST OF FIGURES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
LIST OF TABLES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
FUNCTIONAL BLOCK DIAGRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
PIN ASSIGNMENTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
DEVICE MEMORY MAPS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
DESIGN CONSIDERATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
PRODUCT IDENTIFICATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
MODE SELECTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
LPC MODE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Device Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
CE# . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
LFRAME# . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
TBL#, WP# . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
INIT#, RST# . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
System Memory Mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Response To Invalid Fields. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Abort Mechanism . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Write Operation Status Detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Data# Polling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Toggle Bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Multiple Device Selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Registers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
General Purpose Inputs Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
JEDEC ID Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
PARALLEL PROGRAMMING MODE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Device Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Reset. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Byte-Program Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Sector-Erase Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Block-Erase Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Chip-Erase Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Write Operation Status Detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Data# Polling (DQ7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
©2006 Silicon Storage Technology, Inc.
S71206-08-000
2
5/06
2 Mbit LPC Flash
SST49LF020A
Data Sheet
Toggle Bit (DQ6). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Data Protection (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Hardware Data Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Software Data Protection (SDP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
SOFTWARE COMMAND SEQUENCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
ELECTRICAL SPECIFICATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Absolute Maximum Stress Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
PRODUCT ORDERING INFORMATION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Valid combinations for SST49LF020A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
PACKAGING DIAGRAMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
©2006 Silicon Storage Technology, Inc.
S71206-08-000
3
5/06
2 Mbit LPC Flash
SST49LF020A
Data Sheet
LIST OF FIGURES
FIGURE 1: Functional Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
FIGURE 2: Pin Assignments for 32-lead PLCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
FIGURE 3: Pin Assignments for 32-lead TSOP (8mm x 14mm) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
FIGURE 4: Device Memory Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
FIGURE 5: LPC Read Cycle Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
FIGURE 6: LPC Write Cycle Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
FIGURE 7: Program Command Sequence (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
FIGURE 8: Data# Polling Command Sequence (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
FIGURE 9: Toggle Bit Command Sequence (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
FIGURE 10: Sector-Erase Command Sequence (LPC Mode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
FIGURE 11: Block-Erase Command Sequence (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
FIGURE 12: Register Readout Command Sequence (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
FIGURE 13: LCLK Waveform (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
FIGURE 14: Reset Timing Diagram (LPC Mode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
FIGURE 15: Output Timing Parameters (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
FIGURE 16: Input Timing Parameters (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
FIGURE 17: Reset Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
FIGURE 18: Read Cycle Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
FIGURE 19: Write Cycle Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
FIGURE 20: Data# Polling Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
FIGURE 21: Toggle Bit Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
FIGURE 22: Byte-Program Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
FIGURE 23: Sector-Erase Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
FIGURE 24: Block-Erase Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
FIGURE 25: Chip-Erase Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
FIGURE 26: Software ID Entry and Read (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
FIGURE 27: Software ID Exit (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
FIGURE 28: AC Input/Output Reference Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
FIGURE 29: A Test Load Example. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
FIGURE 30: Read Flowchart (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
FIGURE 31: Byte-Program Flowchart (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
FIGURE 32: Erase Command Sequences Flowchart (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
FIGURE 33: Software Product ID Command Sequences Flowchart (LPC Mode) . . . . . . . . . . . . . . . . . . . . 42
FIGURE 34: Byte-Program Command Sequences Flowchart (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . 43
FIGURE 35: Wait Options Flowchart (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
FIGURE 36: Software Product ID Command Sequences Flowchart (PP Mode) . . . . . . . . . . . . . . . . . . . . . 45
FIGURE 37: Erase Command Sequence Flowchart (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
FIGURE 38: 32-lead Plastic Lead Chip Carrier (PLCC) SST Package Code: NH . . . . . . . . . . . . . . . . . . . . 48
FIGURE 39: 32-lead Thin Small Outline Package (TSOP) 8mm x 14mm SST Package Code: WH . . . . . . 49
©2006 Silicon Storage Technology, Inc.
S71206-08-000
4
5/06
2 Mbit LPC Flash
SST49LF020A
Data Sheet
LIST OF TABLES
TABLE 1: Pin Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
TABLE 2: Product Identification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
TABLE 3: Address bits definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
TABLE 4: Address Decoding Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
TABLE 5: LPC Read Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
TABLE 6: LPC Write Cycle. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
TABLE 7: Multiple Device Selection Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
TABLE 8: General Purpose Inputs Register. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
TABLE 9: Memory Map Register Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
TABLE 10: Operation Modes Selection (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
TABLE 11: Software Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
TABLE 12: DC Operating Characteristics (All Interfaces) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
TABLE 13: Recommended System Power-up Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
TABLE 14: Pin Capacitance (VDD=3.3V, Ta=25 °C, f=1 Mhz, other pins open) . . . . . . . . . . . . . . . . . . . . 28
TABLE 15: Reliability Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
TABLE 16: Clock Timing Parameters (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
TABLE 17: Reset Timing Parameters, VDD=3.0-3.6V (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
TABLE 18: Read/Write Cycle Timing Parameters, VDD=3.0-3.6V (LPC Mode) . . . . . . . . . . . . . . . . . . . . . 30
TABLE 19: AC Input/Output Specifications (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
TABLE 20: Interface Measurement Condition Parameters (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . 32
TABLE 21: Read Cycle Timing Parameters, VDD=3.0-3.6V (PP Mode). . . . . . . . . . . . . . . . . . . . . . . . . . . 33
TABLE 22: Program/Erase Cycle Timing Parameters, VDD=3.0-3.6V (PP Mode) . . . . . . . . . . . . . . . . . . . 33
TABLE 23: Reset Timing Parameters, VDD=3.0-3.6V (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
TABLE 24: Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
©2006 Silicon Storage Technology, Inc.
S71206-08-000
5
5/06
2 Mbit LPC Flash
SST49LF020A
Data Sheet
FUNCTIONAL BLOCK DIAGRAM
TBL#
WP#
INIT#
X-Decoder
SuperFlash
Memory
LAD[3:0]
LCLK
LFRAME#
LPC
Interface
Address Buffers & Latches
Y-Decoder
ID[3:0]
GPI[4:0]
R/C#
A[10:0]
DQ[7:0]
Control Logic
I/O Buffers and Data Latches
Programmer
Interface
OE#
WE#
MODE RST#
CE#
1206 B1.1
FIGURE 1: Functional Block Diagram
©2006 Silicon Storage Technology, Inc.
S71206-08-000
6
5/06
2 Mbit LPC Flash
SST49LF020A
Data Sheet
NC
2
1
A10 (GPI4)
RST# (RST#)
3
R/C# (LCLK)
A9 (GPI3)
4
VDD (VDD)
A8 (GPI2)
PIN ASSIGNMENTS
32 31 30
29
A7(GPI1)
5
A6 (GPI0)
6
28
NC (CE#)
A5 (WP#)
7
27
NC
A4 (TBL#)
8
26
NC
A3 (ID3)
9
25
VDD (VDD)
A2 (ID2)
10
24
OE# (INIT#)
A1 (ID1)
11
23
WE# (LFRAME#)
A0 (ID0)
12
22
NC
DQ0 (LAD0)
13
21
14 15 16 17 18 19 20
DQ7 (RES)
DQ6 (RES)
DQ5 (RES)
DQ4 (RES)
DQ3 (LAD3)
VSS (VSS)
DQ2 (LAD2)
DQ1 (LAD1)
32-lead PLCC
Top View
MODE (MODE)
( ) Designates LPC Mode
1206 32-plcc P1.0
FIGURE 2: Pin Assignments for 32-lead PLCC
NC
NC
NC
NC (CE#)
MODE (MODE)
A10 (GPI4)
R/C# (LCLK)
VDD (VDD)
NC
RST# (RST#)
A9 (GPI3)
A8 (GPI2)
A7 (GPI1)
A6 (GPI0)
A5 (WP#)
A4 (TBL#)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Standard Pinout
Top View
Die Up
OE# (INIT#)
WE# (LFRAME#)
VDD (VDD)
DQ7 (RES)
DQ6 (RES)
DQ5 (RES)
DQ4 (RES)
DQ3 (LAD3)
VSS (VSS)
DQ2 (LAD2)
DQ1 (LAD1)
DQ0 (LAD0)
A0 (ID0)
A1 (ID1)
A2 (ID2)
A3 (ID3)
1206 32-tsop P2.0
( ) Designates LPC Mode
FIGURE 3: Pin Assignments for 32-lead TSOP (8mm x 14mm)
©2006 Silicon Storage Technology, Inc.
S71206-08-000
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5/06
2 Mbit LPC Flash
SST49LF020A
Data Sheet
TABLE 1: Pin Description
Interface
Type1 PP LPC Functions
I
X
Inputs for low-order addresses during Read and Write operations. Addresses are
internally latched during a Write cycle. For the programming interface, these
addresses are latched by R/C# and share the same pins as the high-order
address inputs.
I/O
X
To output data during Read cycles and receive input data during Write cycles.
DQ7-DQ0 Data
Data is internally latched during a Write cycle. The outputs are in tri-state when
OE# is high.
OE#
Output Enable
I
X
To gate the data output buffers.
WE#
Write Enable
I
X
To control the Write operations.
MODE
Interface
I
X
X
This pin determines which interface is operational. When held high, programmer
Mode Select
mode is enabled and when held low, LPC mode is enabled. This pin must be
setup at power-up or before return from reset and not change during device operation. This pin must be held high (VIH) for PP mode and low (VIL) for LPC mode.
INIT#
Initialize
I
X
This is the second reset pin for in-system use. This pin is internally combined
with the RST# pin; If this pin or RST# pin is driven low, identical operation is
exhibited.
ID[3:0]
Identification
I
X
These four pins are part of the mechanism that allows multiple parts to be attached
Inputs
to the same bus. The strapping of these pins is used to identify the component.The
boot device must have ID[3:0]=0000 for all subsequent devices should use sequential up-count strapping. These pins are internally pulled-down with a resistor
between 20-100 KΩ
GPI[4:0]
General
I
X
These individual inputs can be used for additional board flexibility. The state of
Purpose Inputs
these pins can be read through LPC registers. These inputs should be at their
desired state before the start of the PCI clock cycle during which the read is
attempted, and should remain in place until the end of the Read cycle. Unused
GPI pins must not be floated.
TBL#
Top Block Lock
I
X
When low, prevents programming to the boot block sectors at top of memory.
When TBL# is high it disables hardware write protection for the top block sectors.
This pin cannot be left unconnected.
LAD[3:0] Address and
I/O
X
To provide LPC control signals, as well as addresses and Command
Data
Inputs/Outputs data.
LCLK
Clock
I
X
To provide a clock input to the control unit
LFRAME# Frame
I
X
To indicate start of a data transfer operation; also used to abort an LPC cycle
in progress.
RST#
Reset
I
X
X
To reset the operation of the device
WP#
Write Protect
I
X
When low, prevents programming to all but the highest addressable blocks.
When WP# is high it disables hardware write protection for these blocks.
This pin cannot be left unconnected.
R/C#
Row/Column
I
X
Select for the Programming interface, this pin determines whether the address
Select
pins are pointing to the row addresses, or to the column addresses.
RES
Reserved
X
These pins must be left unconnected.
Power Supply
PWR X
X
To provide power supply (3.0-3.6V)
VDD
Ground
PWR X
X
Circuit ground (0V reference)
VSS
CE#
Chip Enable
I
X
This signal must be asserted to select the device. When CE# is low, the device
is enabled. When CE# is high, the device is placed in low power standby mode.
NC
No Connection
I
X
X
Unconnected pins.
Symbol
A10-A0
Pin Name
Address
T1.0 1206
1. I=Input, O=Output
©2006 Silicon Storage Technology, Inc.
S71206-08-000
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5/06
2 Mbit LPC Flash
SST49LF020A
Data Sheet
DEVICE MEMORY MAPS
TBL#
3FFFFH
Block 15
Boot Block
3C000H
3BFFFH
Block 14
38000H
37FFFH
Block 13
34000H
33FFFH
Block 12
30000H
2FFFFH
Block 11
2C000H
2BFFFH
Block 10
28000H
27FFFH
Block 9
24000H
23FFFH
WP# for
Block 0~14
Block 8
20000H
1FFFFH
Block 7
1C000H
1BFFFH
Block 6
18000H
17FFFH
Block 5
14000H
13FFFH
Block 4
10000H
0FFFFH
Block 3
0C000H
0BFFFH
Block 2
08000H
07FFFH
Block 1
04000H
03FFFH
300000
02FFFH
02000H
01FFFH
01000H
00FFFH
00000H
Block 0
(16 KByte)
4 KByte Sector 3
4 KByte Sector 2
4 KByte Sector 1
4 KByte Sector 0
1206 F02.0
FIGURE 4: Device Memory Map
©2006 Silicon Storage Technology, Inc.
S71206-08-000
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5/06
2 Mbit LPC Flash
SST49LF020A
Data Sheet
DESIGN CONSIDERATIONS
LPC MODE
SST recommends a high frequency 0.1 µF ceramic capacitor to be placed as close as possible between VDD and
VSS less than 1 cm away from the VDD pin of the device.
Additionally, a low frequency 4.7 µF electrolytic capacitor
from VDD to VSS should be placed within 5 cm of the VDD
pin. If you use a socket for programming purposes add an
additional 1-10 µF next to each socket.
Device Operation
The LPC mode uses a 5-signal communication interface, a
4-bit address/data bus, LAD[3:0], and a control line,
LFRAME#, to control operations of the SST49LF020A.
Cycle type operations such as Memory Read and Memory
Write are defined in Intel Low Pin Count Interface Specification, Revision 1.0. JEDEC Standard SDP (Software
Data Protection) Program and Erase commands
sequences are incorporated into the standard LPC memory cycles. See Figures 7 through 12 for command
sequences.
PRODUCT IDENTIFICATION
The Product Identification mode identifies the device as the
SST49LF020A and manufacturer as SST.
LPC signals are transmitted via the 4-bit Address/Data bus
(LAD[3:0]), and follow a particular sequence, depending on
whether they are Read or Write operations. LPC memory
Read and Write cycle is defined in Tables 5 and 6.
TABLE 2: Product Identification
Manufacturer’s ID
Address
Data
0000H
BFH
0001H
52H
Device ID
SST49LF020A
Both LPC Read and Write operations start in a similar way
as shown in Figures 5 and 6. The host (which is the term
used here to describe the device driving the memory)
asserts LFRAME# for one or more clocks and drives a start
value on the LAD[3:0] bus.
T2.2 1206
MODE SELECTION
At the beginning of an operation, the host may hold the
LFRAME# active for several clock cycles, and even change
the Start value. The LAD[3:0] bus is latched every rising
edge of the clock. On the cycle in which LFRAME# goes
inactive, the last latched value is taken as the Start value.
CE# must be asserted one cycle before the start cycle to
select the SST49LF020A for Read and Write operations.
The SST49LF020A flash memory devices can operate in
two distinct interface modes: the LPC mode and the Parallel
Programming (PP) mode. The mode pin is used to set the
interface mode selection. If the mode pin is set to logic High,
the device is in PP mode. If the mode pin is set Low, the
device is in the LPC mode. The mode selection pin must be
configured prior to device operation. The mode pin is internally pulled down if the pin is left unconnected. In LPC
mode, the device is configured to its host using standard
LPC interface protocol. Communication between Host and
the SST49LF020A occurs via the 4-bit I/O communication
signals, LAD [3:0] and LFRAME#. In PP mode, the device
is programmed via an 11-bit address and an 8-bit data I/O
parallel signals. The address inputs are multiplexed in row
and column selected by control signal R/C# pin. The row
addresses are mapped to the lower internal addresses
(A10-0), and the column addresses are mapped to the
higher internal addresses (AMS-11). See Figure 4, the
Device Memory Map, for address assignments.
Once the SST49LF020A identify the operation as valid (a
start value of all zeros), it next expects a nibble that indicates whether this is a memory Read or Write cycle. Once
this is received, the device is now ready for the Address
cycles. The LPC protocol supports a 32-bit address phase.
The SST49LF020A encode ID and register space access
in the address field. See Table 3 for address bits definition.
For Write operation the Data cycle will follow the Address
cycle, and for Read operation TAR and SYNC cycles occur
between the Address and Data cycles. At the end of every
operation, the control of the bus must be returned to the
host by a 2-clock TAR cycle.
TABLE 3: Address bits definition
A31: A23
1111 1111 1b
A22
1 = Memory Access
0 = Register access
A21: A18
ID[3:0]1
A17:A0
Device Memory address
T3.0 1206
1. See Table 7 for multiple device selection configuration.
©2006 Silicon Storage Technology, Inc.
S71206-08-000
10
5/06
2 Mbit LPC Flash
SST49LF020A
Data Sheet
CE#
Both TBL# and WP# pins must be set to their required protection states prior to starting a Program or Erase operation. A logic level change occurring at the TBL# or WP# pin
during a Program or Erase operation could cause unpredictable results.
The CE# pin, enables and disables the SST49LF020A,
controlling read and write access of the device. To enable
the SST49LF020A, the CE# pin must be driven low one
clock cycle prior to LFRAME# being driven low. The device
will enter standby mode when internal Write operations are
completed and CE# is high.
INIT#, RST#
A VIL on INIT# or RST# pin initiates a device reset. INIT#
and RST# pins have the same function internally. It is
required to drive INIT# or RST# pins low during a system
reset to ensure proper CPU initialization. During a Read
operation, driving INIT# or RST# pins low deselects the
device and places the output drivers, LAD[3:0], in a highimpedance state. The reset signal must be held low for a
minimal duration of time TRSTP. A reset latency will occur if
a reset procedure is performed during a Program or Erase
operation. See Table 17, Reset Timing Parameters for
more information. A device reset during an active Program
or Erase will abort the operation and memory contents may
become invalid due to data being altered or corrupted from
an incomplete Erase or Program operation.
LFRAME#
The LFRAME# signifies the start of a (frame) bus cycle or
the termination of an undesired cycle. Asserting LFRAME#
for one or more clock cycle and driving a valid START value
on LAD[3:0] will initiate device operation. The device will
enter standby mode when internal operations are completed and LFRAME# is high.
TBL#, WP#
The Top Boot Lock (TBL#) and Write Protect (WP#) pins
are provided for hardware write protection of device memory. The TBL# pin is used to Write-Protect 4 boot sectors
(16 KByte). The WP# pin write protects the remaining sectors in the flash memory.
System Memory Mapping
An active low signal at the TBL# pin prevents Program and
Erase operations of the top boot sectors. When TBL# pin is
held high, the write protection of the top boot sectors is disabled. The WP# pin serves the same function for the
remaining sectors of the device memory. The TBL# and
WP# pins write protection functions operate independently
of one another.
The LPC interface protocol has address length of 32-bit or
4 GByte. The SST49LF020A will respond to addresses in
the range as specified in Table 4.
Refer to “Multiple Device Selection” section for more detail
on strapping multiple SST49LF020A devices to increase
memory densities in a system and “Registers” section on
valid register addresses.
TABLE 4: Address Decoding Range
ID Strapping
Device #0 - 15
Device Access
Address Range
Memory Size
Memory Access
FFFF FFFFH : FFC0 0000H
4 MByte
Register Access
FFBF FFFFH : FF80 0000H
4 MByte
T4.0 1206
©2006 Silicon Storage Technology, Inc.
S71206-08-000
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5/06
2 Mbit LPC Flash
SST49LF020A
Data Sheet
TABLE 5: LPC Read Cycle
Clock
Cycle
Field
Name
Field Contents
LAD[3:0]1
LAD[3:0]
Direction
1
START
0000
IN
LFRAME# must be active (low) for the part to respond. Only the
last start field (before LFRAME# transitions high) should be recognized.
2
CYCTYPE
+ DIR
010X
IN
Indicates the type of cycle. Bits 3:2 must be “01b” for memory cycle.
Bit 1 indicates the type of transfer “0” for Read. Bit 0 is reserved.
3-10
ADDRESS
YYYY
IN
Address Phase for Memory Cycle. LPC protocol supports a 32bit address phase. YYYY is one nibble of the entire address.
Addresses are transferred most-significant nibble fist. See Table
3 for address bits definition and Table 4 for valid memory
address range.
11
TAR0
1111
IN
then Float
In this clock cycle, the host has driven the bus to all 1s and then
floats the bus. This is the first part of the bus “turnaround cycle.”
12
TAR1
1111 (float)
Float
then OUT
The SST49LF020A takes control of the bus during this cycle
13
SYNC
0000
OUT
The SST49LF020A outputs the value 0000b indicating that data
will be available during the next clock cycle.
14
DATA
ZZZZ
OUT
This field is the least-significant nibble of the data byte.
15
DATA
ZZZZ
OUT
This field is the most-significant nibble of the data byte.
16
TAR0
1111
OUT
then Float
17
TAR1
1111 (float)
Float
then IN
Comments
In this clock cycle, the SST49LF020A has driven the bus to all
1s and then floats the bus. This is the first part of the bus “turnaround cycle.”
The host takes control of the bus during this cycle
T5.0 1206
1. Field contents are valid on the rising edge of the present clock cycle.
CE#
LCLK
LFRAME#
LAD[3:0]
Start
CYCTYPE
+
DIR
0000b
010Xb
1 Clock 1 Clock
Address
A[31:28] A[27:24] A[23:20] A[19:16] A[15:12]
A[11:8]
Load Address in 8 Clocks
A[7:4]
A[3:0]
TAR0
TAR1
1111b
Tri-State
2 Clocks
Sync
0000b
Data
D[3:0]
D[7:4]
TAR
1 Clock Data Out 2 Clocks
1206 F06.0
FIGURE 5: LPC Read Cycle Waveform
©2006 Silicon Storage Technology, Inc.
S71206-08-000
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5/06
2 Mbit LPC Flash
SST49LF020A
Data Sheet
TABLE 6: LPC Write Cycle
Clock
Cycle
Field
Name
Field Contents
LAD[3:0]1
LAD[3:0]
Direction
1
START
0000
IN
LFRAME# must be active (low) for the part to respond.
Only the last start field (before LFRAME# transitions
high) should be recognized.
2
CYCTYPE +
DIR
011X
IN
Indicates the type of cycle. Bits 3:2 must be “01b” for
memory cycle. Bit 1 indicates the type of transfer “1”
for Write. Bit 0 is reserved.
3-10
ADDRESS
YYYY
IN
Address Phase for Memory Cycle. LPC protocol supports a 32-bit address phase. YYYY is one nibble of
the entire address. Addresses are transferred mostsignificant nibble first. See Table 3 for address bits definition and Table 4 for valid memory address range.
11
DATA
ZZZZ
IN
This field is the least-significant nibble of the data byte.
12
DATA
ZZZZ
IN
This field is the most-significant nibble of the data byte.
13
TAR0
1111
IN then Float
In this clock cycle, the host has driven the bus to all ‘1’s
and then floats the bus. This is the first part of the bus
“turnaround cycle.”
14
TAR1
1111 (float)
Float then OUT
The SST49LF020A takes control of the bus during this
cycle.
15
SYNC
0000
OUT
The SST49LF020A outputs the values 0000, indicating that it has received data or a flash command.
16
TAR0
1111
OUT then Float
In this clock cycle, the SST49LF020A has driven the
bus to all ‘1’s and then floats the bus. This is the first
part of the bus “turnaround cycle.”
17
TAR1
1111 (float)
Float then IN
Comments
Host resumes control of the bus during this cycle.
T6.0 1206
1. Field contents are valid on the rising edge of the present clock cycle.
CE#
LCLK
LFRAME#
LAD[3:0]
Start
CYCTYPE
+
DIR
0000b
011Xb
Address
A[31:28] A[27:24] A[23:20] A[19:16] A[15:12]
1 Clock 1 Clock
Load Address in 8 Clocks
A[11:8]
A[7:4]
A[3:0]
Data
Data
TAR0
D[3:0]
D[7:4]
1111b Tri-State
Load Data in 2 Clocks
TAR1
2 Clocks
Sync
0000b
TAR
1 Clock
1206 F07.0
FIGURE 6: LPC Write Cycle Waveform
©2006 Silicon Storage Technology, Inc.
S71206-08-000
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5/06
2 Mbit LPC Flash
SST49LF020A
Data Sheet
Response To Invalid Fields
Write Operation Status Detection
During LPC Read/Write operations, the SST49LF020A will
not explicitly indicate that it has received invalid field
sequences. The response to specific invalid fields or
sequences is as follows:
The SST49LF020A device provides two software means to
detect the completion of a Write (Program or Erase) cycle,
in order to optimize the system Write cycle time. The software detection includes two status bits: Data# Polling, D[7],
and Toggle Bit, D[6]. The End-of-Write detection mode is
incorporated into the LPC Read Cycle. The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a Data# Polling or Toggle Bit read
may be simultaneous with the completion of the Write
cycle. If this occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with either
D[7] or D[6]. In order to prevent spurious rejection, if an
erroneous result occurs, the software routine should
include a loop to read the accessed location an additional
two (2) times. If both reads are valid, then the device has
completed the Write cycle, otherwise the rejection is valid.
Address out of range: The SST49LF020A will only
response to address range as specified in Table 4.
ID mismatch: ID information is included in every address
cycle. The SST49LF020A will compare ID bits in the
address field with the hardware ID strapping. If there is a
mis-match, the device will ignore the cycle. See Multiple
Device Selection section for details.
Once valid START, CYCTYPE + DIR, valid address range
and ID bits are received, the SST49LF020A will always
complete the bus cycle. However, if the device is busy performing a flash Erase or Program operation, no new internal Write command (memory write or register write) will be
executed. As long as the states of LAD[3:0] and LAD[4] are
known, the response of the SST49LF020A to signals
received during the LPC cycle should be predictable.
Data# Polling
When the SST49LF020A device is in the internal Program
operation, any attempt to read D[7] will produce the complement of the true data. Once the Program operation is
completed, D[7] will produce true data. Note that even
though D[7] may have valid data immediately following the
completion of an internal Write operation, the remaining
data outputs may still be invalid: valid data on the entire
data bus will appear in subsequent successive Read
cycles after an interval of 1 µs. During internal Erase operation, any attempt to read D[7] will produce a ‘0’. Once the
internal Erase operation is completed, D[7] will produce a
‘1’. Proper status will not be given using Data# Polling if the
address is in the invalid range.
Abort Mechanism
If LFRAME# is driven low for one or more clock cycles after
the start of an LPC cycle, the cycle will be terminated. The
host may drive the LAD[3:0] with ‘1111b’ (ABORT nibble) to
return the interface to ready mode. The ABORT only
affects the current bus cycle. For a multi-cycle command
sequence, such as the Erase or Program SDP commands,
ABORT doesn’t interrupt the entire command sequence,
but only the current bus cycle of the command sequence.
The host can re-send the bus cycle and continue the SDP
command sequence after the device is ready again.
Toggle Bit
During the internal Program or Erase operation, any consecutive attempts to read D[6] will produce alternating 0s and
1s, i.e., toggling between 0 and 1. When the internal Program or Erase operation is completed, the toggling will stop.
©2006 Silicon Storage Technology, Inc.
S71206-08-000
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5/06
2 Mbit LPC Flash
SST49LF020A
Data Sheet
Multiple Device Selection
Registers
Multiple LPC flash devices may be strapped to increase
memory densities in a system. The four ID pins, ID[3:0],
allow up to 16 devices to be attached to the same bus by
using different ID strapping in a system. BIOS support, bus
loading, or the attaching bridge may limit this number. The
boot device must have an ID of 0 (determined by ID[3:0]);
subsequent devices use incremental numbering. Equal
density must be used with multiple devices.
There are two registers available on the SST49LF020A,
the General Purpose Inputs Registers (GPI_REG) and the
JEDEC ID Registers. Since multiple LPC memory devices
may be used to increase memory densities, these registers
appear at its respective address location in the 4 GByte
system memory map. Unused register locations will read
as 00H. Any attempt to read registers during internal Write
operation will respond as “Write operation status detection”
(Data# Polling or Toggle Bit). Any attempt to write any registers during internal Write operation will be ignored. Table
9 lists GPI_REG and JEDEC ID address locations for
SST49LF020A with its respective device strapping.
When used as a boot device, ID[3:0] must be strapped as
0000; all subsequent devices should use a sequential upcount strapping (i.e. 0001, 0010, 0011, etc.). With the hardware strapping, ID information is included in every LPC
address memory cycle. The ID bits in the address field are
inverse of the hardware strapping. The address bits
[A21:A18] are used to select the device with proper IDs. See
Table 7 for IDs. The SST49LF020A will compare these bits
with ID[3:0]’s strapping values. If there is a mismatch, the
device will ignore the reminder of the cycle.
TABLE 8: General Purpose Inputs Register
Pin #
TABLE 7: Multiple Device Selection
Configuration
Hardware
Strapping
Bit
Function
32-PLCC
32-TSOP
7:5
Reserved
-
-
4
GPI[4]
Reads status of general
purpose input pin
30
6
3
GPI[3]
Reads status of general
purpose input pin
3
11
2
GPI[2]
Reads status of general
purpose input pin
4
12
1
GPI[1]
Reads status of general
purpose input pin
5
13
0
GPI[0]
Reads status of general
purpose input pin
6
14
Address Bits Decoding
Device #
ID[3:0]
A21
A20
A19
A18
0 (Boot device)
0000
1
1
1
1
1
0001
1
1
1
0
2
0010
1
1
0
1
3
0011
1
1
0
0
4
0100
1
0
1
1
5
0101
1
0
1
0
6
0110
1
0
0
1
7
0111
1
0
0
0
8
1000
0
1
1
1
9
1001
0
1
1
0
10
1010
0
1
0
1
11
1011
0
1
0
0
12
1100
0
0
1
1
13
1101
0
0
1
0
14
1110
0
0
0
1
15
1111
0
0
0
T8.0 1206
0
T7.2 1206
©2006 Silicon Storage Technology, Inc.
S71206-08-000
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5/06
2 Mbit LPC Flash
SST49LF020A
Data Sheet
General Purpose Inputs Register
JEDEC ID Registers
The GPI_REG (General Purpose Inputs Register) passes
the state of GPI[4:0] pins at power-up on the
SST49LF020A. It is recommended that the GPI[4:0] pins
be in the desired state before LFRAME# is brought low for
the beginning of the next bus cycle, and remain in that state
until the end of the cycle. There is no default value since
this is a pass-through register. See the General Purpose
Inputs Register table for the GPI_REG bits and function,
and Table 9 for memory address locations for its respective
device strapping.
The JEDEC ID registers identify the device as
SST49LF020A and manufacturer as SST in LPC mode.
See Table 9 for memory address locations for its respective
JEDEC ID location.
TABLE 9: Memory Map Register Addresses
JEDEC ID
Device #
Hardware Strapping ID[3:0]
GPI_REG
Manufacturer
Device
0 (Boot device)
0000
FFBC 0100H
FFBC 0000H
FFBC 0001H
1
0001
FFB8 0100H
FFB8 0000H
FFB8 0001H
2
0010
FFB4 0100H
FFB4 0000H
FFB4 0001H
3
0011
FFB0 0100H
FFB0 0000H
FFB0 0001H
4
0100
FFAC 0100H
FFAC 0000H
FFAC 0001H
5
0101
FFA8 0100H
FFA8 0000H
FFA8 0001H
6
0110
FFA4 0100H
FFA4 0000H
FFA4 0001H
7
0111
FFA0 0100H
FFA0 0000H
FFA0 0001H
8
1000
FF9C 0100H
FF9C 0000H
FF9C 0001H
9
1001
FF98 0100H
FF98 0000H
FF98 0001H
10
1010
FF94 0100H
FF94 0000H
FF94 0001H
11
1011
FF90 0100H
FF90 0000H
FF90 0001H
12
1100
FF8C 0100H
FF8C 0000H
FF8C 0001H
13
1101
FF88 0100H
FF88 0000H
FF88 0001H
14
1110
FF84 0100H
FF84 0000H
FF84 0001H
15
1111
FF80 0100H
FF80 0000H
FF80 0001H
T9.0 1206
©2006 Silicon Storage Technology, Inc.
S71206-08-000
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5/06
2 Mbit LPC Flash
SST49LF020A
Data Sheet
PARALLEL PROGRAMMING MODE
Device Operation
Sector-Erase Operation
Commands are used to initiate the memory operation functions of the device. The data portion of the software command sequence is latched on the rising edge of WE#.
During the software command sequence the row address
is latched on the falling edge of R/C# and the column
address is latched on the rising edge of R/C#.
Driving the RST# low will initiate a hardware reset of the
SST49LF020A. See Table 23 for Reset timing parameters
and Figure 17 for Reset timing diagram.
The Sector-Erase operation allows the system to erase
the device on a sector-by-sector basis. The sector architecture is based on uniform sector size of 4 KByte. The
Sector-Erase operation is initiated by executing a six-byte
command load sequence for Software Data Protection
with Sector-Erase command (30H) and sector address
(SA) in the last bus cycle. The internal Erase operation
begins after the sixth WE# pulse. The End-of-Erase can
be determined using either Data# Polling or Toggle Bit
methods. See Figure 23 for Sector-Erase timing waveforms. Any commands written during the Sector-Erase
operation will be ignored.
Read
Block-Erase Operation
The Read operation of the SST49LF020A device is controlled by OE#. OE# is the output control and is used to
gate data from the output pins. Refer to the Read cycle timing diagram, Figure 18, for further details.
The Block-Erase Operation allows the system to erase the
device in 16 KByte uniform block size for the
SST49LF020A. The Block-Erase operation is initiated by
executing a six-byte command load sequence for Software
Data Protection with Block-Erase command (50H) and
block address. The internal Block-Erase operation begins
after the sixth WE# pulse. The End-of-Erase can be determined using either Data# Polling or Toggle Bit methods.
See Figure 24 for Block-Erase timing waveforms. Any commands written during the Block-Erase operation will be
ignored.
Reset
Byte-Program Operation
The SST49LF020A device is programmed on a byte-bybyte basis. Before programming, one must ensure that the
sector in which the byte is programmed is fully erased. The
Byte-Program operation is initiated by executing a four-byte
command load sequence for Software Data Protection with
address (BA) and data in the last byte sequence. During
the Byte-Program operation, the row address (A10-A0) is
latched on the falling edge of R/C# and the column address
(A21-A11) is latched on the rising edge of R/C#. The data
bus is latched on the rising edge of WE#. The Program
operation, once initiated, will be completed, within 20 µs.
See Figure 22 for Program operation timing diagram and
Figure 34 for its flowchart. During the Program operation,
the only valid reads are Data# Polling and Toggle Bit. During the internal Program operation, the host is free to perform additional tasks. Any commands written during the
internal Program operation will be ignored.
Chip-Erase Operation
The SST49LF020A devices provide a Chip-Erase operation, which allows the user to erase the entire memory
array to the “1s” state. This is useful when the entire device
must be quickly erased.
The Chip-Erase operation is initiated by executing a sixbyte Software Data Protection command sequence with
Chip-Erase command (10H) with address 5555H in the last
byte sequence. The internal Erase operation begins with
the rising edge of the sixth WE#. During the internal Erase
operation, the only valid read is Toggle Bit or Data# Polling.
See Table 11 for the command sequence, Figure 25 for
Chip-Erase timing diagram, and Figure 37 for the flowchart.
Any commands written during the Chip-Erase operation
will be ignored.
©2006 Silicon Storage Technology, Inc.
S71206-08-000
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5/06
2 Mbit LPC Flash
SST49LF020A
Data Sheet
Write Operation Status Detection
though DQ7 may have valid data immediately following the
completion of an internal Write operation, the remaining
data outputs may still be invalid: valid data on the entire
data bus will appear in subsequent successive Read
cycles after an interval of 1 µs. During internal Erase operation, any attempt to read DQ7 will produce a ‘0’. Once the
internal Erase operation is completed, DQ7 will produce a
‘1’. The Data# Polling is valid after the rising edge of fourth
WE# pulse for Program operation. For Sector-, Block-, or
Chip-Erase, the Data# Polling is valid after the rising edge
of sixth WE# pulse. See Figure 20 for Data# Polling timing
diagram and Figure 35 for a flowchart. Proper status will
not be given using Data# Polling if the address is in the
invalid range.
The SST49LF020A devices provide two software means to
detect the completion of a Write (Program or Erase) cycle,
in order to optimize the system Write cycle time. The software detection includes two status bits: Data# Polling D[7]
and Toggle Bit D[6]. The End-of-Write detection mode is
enabled after the rising edge of WE# which initiates the
internal Program or Erase operation.
The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a Data# Polling or
Toggle Bit read may be simultaneous with the completion
of the Write cycle. If this occurs, the system may possibly
get an erroneous result, i.e., valid data may appear to conflict with either D[7] or D[6]. In order to prevent spurious
rejection, if an erroneous result occurs, the software routine
should include a loop to read the accessed location an
additional two (2) times. If both reads are valid, then the
device has completed the Write cycle, otherwise the rejection is valid.
Toggle Bit (DQ6)
During the internal Program or Erase operation, any consecutive attempts to read DQ6 will produce alternating 0s
and 1s, i.e., toggling between 0 and 1. When the internal
Program or Erase operation is completed, the toggling will
stop. The device is then ready for the next operation. The
Toggle Bit is valid after the rising edge of fourth WE# pulse
for Program operation. For Sector-, Block-, or Chip-Erase,
the Toggle Bit is valid after the rising edge of sixth WE#
pulse. See Figure 21 for Toggle Bit timing diagram and Figure 35 for a flowchart.
Data# Polling (DQ7)
When the SST49LF020A device is in the internal Program
operation, any attempt to read DQ7 will produce the complement of the true data. Once the Program operation is
completed, DQ7 will produce true data. Note that even
TABLE 10: Operation Modes Selection (PP Mode)
Mode
RST#
OE#
WE#
Read
VIL
Erase
VIH
VIH
VIH
VIH
VIH
Reset
VIL
X
Write Inhibit
VIH
X
VIH
VIL
Program
Product Identification
DQ
Address
VIH
DOUT
AIN
VIL
DIN
AIN
VIL
X1
Sector or Block address,
XXH for Chip-Erase
X
High Z
X
VIL
X
X
VIH
VIH
High Z/DOUT
High Z/DOUT
X
X
Manufacturer’s ID (BFH)
Device ID2
See Table 11
T10.2 1206
1. X can be VIL or VIH, but no other value.
2. Device ID = 52H for SST49LF020A
©2006 Silicon Storage Technology, Inc.
S71206-08-000
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5/06
2 Mbit LPC Flash
SST49LF020A
Data Sheet
Data Protection (PP Mode)
Software Data Protection (SDP)
The SST49LF020A devices provide both hardware and
software features to protect nonvolatile data from inadvertent writes.
The SST49LF020A provide the JEDEC approved Software
Data Protection scheme for all data alteration operation,
i.e., Program and Erase. Any Program operation requires
the inclusion of a series of three-byte sequence. The threebyte load sequence is used to initiate the Program operation, providing optimal protection from inadvertent Write
operations, e.g., during the system power-up or powerdown. Any Erase operation requires the inclusion of a sixbyte load sequence.
Hardware Data Protection
Noise/Glitch Protection: A WE# pulse of less than 5 ns will
not initiate a Write cycle.
VDD Power Up/Down Detection: The Write operation is
inhibited when VDD is less than 1.5V.
Write Inhibit Mode: Forcing OE# low, WE# high will inhibit
the Write operation. This prevents inadvertent writes during
power-up or power-down.
©2006 Silicon Storage Technology, Inc.
S71206-08-000
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5/06
2 Mbit LPC Flash
SST49LF020A
Data Sheet
SOFTWARE COMMAND SEQUENCE
TABLE 11: Software Command Sequence
Command
Sequence
1st1
Cycle
Addr2
2nd1
Cycle
Data
Addr2
3rd1
Cycle
Data
Addr2
4th1
Cycle
5th1
Cycle
Data
Addr2
Data
Data
AAH
Byte-Program
YYYY 5555H
AAH
YYYY 2AAAH
55H
YYYY 5555H
A0H
PA3
Sector-Erase
YYYY 5555H
AAH
YYYY 2AAAH
55H
YYYY 5555H
80H
YYYY 5555H
6th1
Cycle
Addr2
Data
Addr2
Data
YYYY 2AAAH
55H
SAX4
30H
50H
10H
Block-Erase
YYYY 5555H
AAH
YYYY 2AAAH
55H
YYYY 5555H
80H
YYYY 5555H
AAH
YYYY 2AAAH
55H
BAX5
Chip-Erase6
YYYY 5555H
AAH
YYYY 2AAAH
55H
YYYY 5555H
80H
YYYY 5555H
AAH
YYYY 2AAAH
55H
YYYY 5555H
Software
ID Entry
YYYY 5555H
AAH
Software
ID Exit8
XXXX XXXXH
F0H
Software
ID Exit8
YYYY 5555H
AAH
YYYY 2AAAH
55H
YYYY 5555H
90H
YYYY 2AAAH
55H
YYYY 5555H
F0H
Read
ID7
T11.1 1206
1. LPC mode use consecutive Write cycles to complete a command sequence; PP mode use consecutive bus cycles to complete a
command sequence.
2. YYYY = A[31:16]. In LPC mode, during SDP command sequence, YYYY must be within memory address range specified in Table 4.
In PP mode, YYYY can be VIL or VIH, but no other value.
3. PA = Program Byte address
4. SAX for Sector-Erase Address
5. BAX for Block-Erase Address
6. Chip-Erase is supported in PP mode only
7. SST Manufacturer’s ID = BFH, is read with A0 = 0.
With A17-A1 = 0; SST49LF020A Device ID = 52H, is read with A0 = 1.
8. Both Software ID Exit operations are equivalent
©2006 Silicon Storage Technology, Inc.
S71206-08-000
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5/06
2 Mbit LPC Flash
SST49LF020A
Data Sheet
CE#
LCLK
LFRAME#
LAD[3:0]
1st Start
Memory
Write
Cycle
0000b
011Xb
Address1
A[31:28] A[27:24] A[23:20] A[19:16]
1 Clock 1 Clock
Data
0101b
0101b
0101b
0101b
Load Address "YYYY 5555H" in 8 Clocks
1010b
TAR
1010b
1111b
Start next
Command
Sync
TAR
Tri-State 0000b
Load Data "AAH" in 2 Clocks 2 Clocks
1 Clock
1 Clock
Write the 1st command to the device in LPC mode.
CE#
LCLK
LFRAME#
LAD[3:0]
2nd Start
0000b
Memory
Write
Cycle
011Xb
1 Clock 1 Clock
Address1
A[31:28] A[27:24] A[23:20] A[19:16]
0010b
Data
1010b
1010b
Load Address "YYYY 2AAAH" in 8 Clocks
1010b
0101b
TAR
0101b
1111b
Tri-State 0000b
Load Data "55H" in 2 Clocks 2 Clocks
Start next
Command
Sync
TAR
1 Clock
1 Clock
Write the 2nd command to the device in LPC mode.
CE#
LCLK
LFRAME#
LAD[3:0]
Address1
3rd Start
0000b
011Xb
1 Clock 1 Clock
A[31:28] A[27:24] A[23:20] A[19:16]
0101b
Data
0101b
0101b
Load Address "YYYY 5555H" in 8 Clocks
0101b
0000b
TAR
1010b
1111b
Tri-State 0000b
Load Data "A0H" in 2 Clocks 2 Clocks
Start next
Command
Sync
TAR
1 Clock
1 Clock
Write the 3rd command to the device in LPC mode.
CE#
LCLK
LFRAME#
LAD[3:0]
Memory
Write
4th Start Cycle
0000b
011Xb
1 Clock 1 Clock
Internal
program start
Address1
Data
A[31:28] A[27:24] A[23:20] A[19:16] A[15:12] A[11:8]
A[7:4]
A[3:0]
Load Ain in 8 Clocks
D[3:0]
TAR
D[7:4]
Load Data in 2 Clocks
1111b
Tri-State
2 Clocks
Sync
0000b
1 Clock
TAR
Internal
program start
Write the 4th command (target locations to be programmed) to the device in LPC mode.
1206 F08.0
Note: 1. Address must be within memory address range specified in Table 4.
FIGURE 7: Program Command Sequence (LPC Mode)
©2006 Silicon Storage Technology, Inc.
S71206-08-000
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5/06
2 Mbit LPC Flash
SST49LF020A
Data Sheet
CE#
LCLK
LFRAME#
LAD[3:0]
1st Start
Memory
Write
Cycle
0000b 011Xb
1 Clock 1 Clock
Address1
A[31:28] A[27:24] A[23:20]
A[19:16]
Data
A[15:12]
A[11:8]
A[7:4]
A[3:0]
D[3:0]
Dn[7:4]
1111b Tri-State
0000b
2 Clocks
1 Clock
Load Data in 2 Clocks
Load Address in 8 Clocks
Sync
TAR
TAR
Start next
Command
0000b
1 Clock
Write the last command (Program or Erase) to the device in LPC mode.
CE#
LCLK
LFRAME#
LAD[3:0]
Start
0000b
Next start
Memory
Read
Cycle
010Xb
1 Clock 1 Clock
Address1
A[31:28] A[27:24] A[23:20]
A[19:16]
TAR
A[15:12]
A[11:8]
A[7:4]
A[3:0]
1111b
Sync
Tri-State 0000b
2 Clocks
Load Address in 8 Clocks
Read the DQ7 to see if internal write complete or not.
1 Clock
Data
XXXXb
D7#,xxx
TAR
0000b
1 Clock
Data out 2 Clocks
CE#
LCLK
LFRAME#
LAD[3:0]
Start
0000b
Memory
Read
Cycle
010Xb
1 Clock 1 Clock
Next start
Address1
A[31:28] A[27:24] A[23:20]
A[19:16]
TAR
A[15:12]
A[11:8]
A[7:4]
A[3:0]
1111b Tri-State
2 Clocks
Load Address in 8 Clocks
Sync
0000b
Data
XXXXb
D7,xxx
1 Clock Data out 2 Clocks
TAR
0000b
1 Clock
When internal write complete, the DQ7 will equal to D7.
1206 F09.0
Note: 1. Address must be within memory address range specified in Table 4.
FIGURE 8: Data# Polling Command Sequence (LPC Mode)
©2006 Silicon Storage Technology, Inc.
S71206-08-000
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5/06
2 Mbit LPC Flash
SST49LF020A
Data Sheet
CE#
LCLK
LFRAME#
LAD[3:0]
1st Start
Memory
Write
Cycle
0000b
011Xb
1 Clock 1 Clock
Address1
A[31:28] A[27:24]
A[23:20]
A[19:16]
Data
A[15:12]
A[11:8]
A[7:4]
Load Address in 8 Clocks
A[3:0]
D[3:0]
TAR
D[7:4]
Load Data in 2 Clocks
Sync
1111b Tri-State
0000b
2 Clocks
TAR
Start next
Command
0000b
1 Clock
1 Clock
Write the last command (Program or Erase) to the device in LPC mode.
CE#
LCLK
LFRAME#
LAD[3:0]
Start
0000b
Next start
Memory
Read
Cycle
010Xb
1 Clock 1 Clock
Address1
A[31:28] A[27:24] A[23:20]
A[19:16]
TAR
A[15:12]
A[11:8]
A[7:4]
A[3:0]
1111b
Load Address in 8 Clocks
Sync
Tri-State 0000b
Data
XXXXb
X,D6#,XXb
2 Clocks
1 Clock
Data out 2 Clocks
TAR
Sync
Data
0000b
XXXXb X,D6,XXb
0000b
TAR
1 Clock
Read the DQ6 to see if internal write complete or not.
CE#
LCLK
LFRAME#
LAD[3:0]
Start
0000b
Next start
Memory
Read
Cycle
010Xb
1 Clock 1 Clock
Address1
A[31:28] A[27:24] A[23:20]
A[19:16]
A[15:12]
A[11:8]
A[7:4]
A[3:0]
1111b
Load Address in 8 Clocks
When internal write complete, the DQ6 will stop toggle.
Tri-State
2 Clocks
0000b
TAR
1 Clock
1 Clock Data out 2 Clocks
1206 F10.0
Note: 1. Address must be within memory address range specified in Table 4.
FIGURE 9: Toggle Bit Command Sequence (LPC Mode)
©2006 Silicon Storage Technology, Inc.
S71206-08-000
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5/06
2 Mbit LPC Flash
SST49LF020A
Data Sheet
CE#
LCLK
LFRAME#
1st Start
LAD[3:0]
0000b
Memory
Write
Cycle
011Xb
1 Clock 1 Clock
Address1
Data
A[31:28] A[27:24] A[23:20] A[19:16]
0101b
0101b
0101b
0101b
1010b
1010b
1111b
Tri-State 0000b
Load Data "AAH" in 2 Clocks 2 Clocks
Load Address "YYYY 5555H" in 8 Clocks
Start next
Command
Sync
TAR
TAR
1 Clock
1 Clock
Write the 1st command to the device in LPC mode.
CE#
LCLK
LFRAME#
2nd Start
LAD[3:0]
0000b
Memory
Write
Cycle
011Xb
1 Clock 1 Clock
Address1
Data
0010b
A[31:28] A[27:24] A[23:20] A[19:16]
1010b
1010b
1010b
0101b
0101b
1111b
Tri-State 0000b
Load Data "55H" in 2 Clocks 2 Clocks
Load Address "YYYY 2AAAH" in 8 Clocks
Start next
Command
Sync
TAR
TAR
1 Clock
1 Clock
Write the 2nd command to the device in LPC mode.
CE#
LCLK
LFRAME#
3rd Start
Memory
Write
Cycle
0000b 011Xb
LAD[3:0]
1 Clock 1 Clock
Address1
A[31:28] A[27:24] A[23:20] A[19:16]
Data
0101b
0101b
0101b
Load Address "YYYY 5555H" in 8 Clocks
0101b
0000b
TAR
1000b
Tri-State
1111b
Start next
Command
Sync
0000b
Load Data "80H" in 2 Clocks 2 Clocks
TAR
1 Clock
1 Clock
Write the 3rd command to the device in LPC mode.
CE#
LCLK
LFRAME#
4th Start
Memory
Write
Cycle
0000b 011Xb
LAD[3:0]
1 Clock 1 Clock
Address1
A[31:28] A[27:24] A[23:20] A[19:16]
Data
0101b
0101b
0101b
Load Address "YYYY 5555H" in 8 Clocks
0101b
1010b
1010b
TAR
1111b
Start next
Command
Sync
Tri-State
Load Data "AAH" in 2 Clocks 2 Clocks
0000b
TAR
1 Clock
1 Clock
Write the 4th command to the device in LPC mode.
CE#
LCLK
LFRAME#
5th
LAD[3:0]
Memory
Write
Cycle
0000b 011Xb
1 Clock 1 Clock
Address1
A[31:28] A[27:24] A[23:20] A[19:16]
Data
0010b
1010b
1010b
Load Address "YYYY 2AAA" in 8 ClocksH
1010b
0101b
0101b
1111b Tri-State
Load Data "55H" in 2 Clocks 2 Clocks
Start next
Command
Sync
TAR
0000b
TAR
1 Clock
1 Clock
Write the 5th command to the device in LPC mode.
CE#
LCLK
Internal
erase start
LFRAME#
6th Start
LAD[3:0]
0000b
Memory
Write
Cycle
011Xb
1 Clock 1 Clock
Address1
A[31:28] A[27:24] A[23:20] A[19:16]
Data
SAX
XXXXb XXXXb
Load Sector Address in 8 Clocks
XXXXb
0000b
0011b
Load Data “30” in 2 Clocks
TAR
1111b
Tri-State
2 Clocks
Internal
erase start
Sync
0000b
1 Clock
TAR
1206 F11.0
Write the 6th command (target sector to be erased) to the device in LPC mode.
SAX = Sector Address
Note: 1. Address must be within memory address range specified in Table 4.
FIGURE 10: Sector-Erase Command Sequence (LPC Mode)
©2006 Silicon Storage Technology, Inc.
S71206-08-000
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5/06
2 Mbit LPC Flash
SST49LF020A
Data Sheet
CE#
LCLK
LFRAME#
Memory
Write
Cycle
1st Start
LAD[3:0]
0000b
Address1
011Xb
Data
A[31:28] A[27:24] A[23:20] A[19:16] 0101b
0101b
0101b
0101b
1010b
1010b
1111b
Tri-State 0000b
Load Data "AAH" in 2 Clocks 2 Clocks
Load Address "YYYY 5555H" in 8 Clocks
Write the 1st command to the device in LPC mode.
1 Clock 1 Clock
Start next
Command
Sync
TAR
TAR
1 Clock
1 Clock
CE#
LCLK
LFRAME#
Memory
Write
Cycle
2nd Start
0000b
LAD[3:0]
011Xb
1 Clock 1 Clock
Address1
A[31:28] A[27:24] A[23:20] A[19:16]
Data
0010b
1010b
1010b
1010b
0101b
0101b
TAR
1111b Tri-State
Load Data "55H" in 2 Clocks 2 Clocks
Load Address "YYYY 2AAAH" in 8 Clocks
Start next
Command
Sync
0000b
TAR
1 Clock
1 Clock
Write the 2nd command to the device in LPC mode.
CE#
LCLK
LFRAME#
3rd Start
LAD[3:0]
0000b
Memory
Write
Cycle
011Xb
1 Clock 1 Clock
Address1
A[31:28] A[27:24] A[23:20] A[19:16]
Data
0101b
0101b
0101b
0101b
0000b
TAR
1000b
1111b Tri-State
Load Data "80H" in 2 Clocks 2 Clocks
Load Address "YYYY 5555H" in 8 Clocks
Start next
Command
Sync
0000b
TAR
1 Clock
1 Clock
Write the 3rd command to the device in LPC mode.
CE#
LCLK
LFRAME#
4th Start
LAD[3:0]
Memory
Write
Cycle
0000b 011Xb
1 Clock 1 Clock
Address1
Data
A[31:28] A[27:24] A[23:20] A[19:16] 0101b
0101b
0101b
0101b
1010b
1010b
TAR
1111b
Start next
Command
Sync
Tri-State
Load Data "AAH" in 2 Clocks 2 Clocks
Load Address "YYYY 5555H" in 8 Clocks
Write the 4th command to the device in LPC mode.
0000b
TAR
1 Clock
1 Clock
Sync
Start next
Command
CE#
LCLK
LFRAME#
5th
LAD[3:0]
0000b
Memory
Write
Cycle
011Xb
1 Clock 1 Clock
Address1
A[31:28] A[27:24] A[23:20] A[19:16]
Data
0010b
1010b
1010b
Load Address "YYYY 2AAAH" in 8 Clocks
1010b
0101b
0101b
TAR
1111b
Tri-State
Load Data "55H" in 2 Clocks 2 Clocks
0000b
TAR
1 Clock
1 Clock
Write the 5th command to the device in LPC mode.
CE#
LCLK
Internal
erase start
LFRAME#
6th Start
LAD[3:0]
0000b
Memory
Write
Cycle
Address1
011Xb
A[31:28] A[27:24] A[23:20] A[19:16]
1 Clock 1 Clock
BAX
Load Block Address in 8 Clocks
Data
XXXXb XXXXb
XXXXb
0000b
0101b
Load Data “50” in 2 Clocks
TAR
1111b
2 Clocks
Write the 6th command (target sector to be erased) to the device in LPC mode.
BAX = Block Address
Internal
erase start
Sync
Tri-State 0000b
TAR
1 Clock
1206 F12.0
Note: 1. Address must be within memory address range specified in Table 4.
FIGURE 11: Block-Erase Command Sequence (LPC Mode)
©2006 Silicon Storage Technology, Inc.
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2 Mbit LPC Flash
SST49LF020A
Data Sheet
CE#
LCLK
LFRAME#
Start
LAD[3:0]
0000b
Memory
Read
Cycle
010Xb
1 Clock 1 Clock
Address1
TAR
A[31:28] A[27:24] A[23:20] A[19:16] A[15:12] A[11:8]
A[7:4]
A[3:0]
Load Address in 8 Clocks
1111b
Tri-State
2 Clocks
Sync
0000b
1 Clock
Start next
Data
D[3:0]
D[7:4]
0000b
TAR
1 Clock
Data out 2 Clocks
1206 F13.0
Note: 1. See Table 9 for register addresses.
FIGURE 12: Register Readout Command Sequence (LPC Mode)
©2006 Silicon Storage Technology, Inc.
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2 Mbit LPC Flash
SST49LF020A
Data Sheet
ELECTRICAL SPECIFICATIONS
The AC and DC specifications for the LPC interface signals (LA0[3:0], LFRAME, LCLCK and RST#) as defined in
Section 4.2.2.4 of the PCI local Bus specification, Rev. 2.1. Refer to Table 12 for the DC voltage and current specifications. Refer to Tables 16 through 19 and Tables 21 through 23 for the AC timing specifications for Clock, Read,
Write, and Reset operations.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this
datasheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D.C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V
Package Power Dissipation Capability (Ta=25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Solder Reflow Temperature1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Output Short Circuit Current2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1. Excluding certain with-Pb 32-PLCC units, all packages are 260°C capable in both non-Pb and with-Pb solder versions.
Certain with-Pb 32-PLCC package types are capable of 240°C for 10 seconds; please consult the factory for the latest information.
2. Outputs shorted for no more than one second. No more than one output shorted at a time.
AC Conditions of Test
Operating Range
Range
Commercial
Input Rise/Fall Time . . . . . . . . . . . . . . . 3 ns
Ambient Temp
VDD
0°C to +85°C
3.0-3.6V
Output Load . . . . . . . . . . . . . . . . . . . . . CL = 30 pF
See Figures 28 and 29
©2006 Silicon Storage Technology, Inc.
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2 Mbit LPC Flash
SST49LF020A
Data Sheet
DC Characteristics
TABLE 12: DC Operating Characteristics (All Interfaces)
Limits
Symbol Parameter
IDD1
Min
Max
Units Test Conditions
Active VDD Current
LCLK (LPC mode) and Address Input (PP mode)=VILT/VIHT
at f=33 MHz (LPC mode) or 1/TRC min (PP Mode)
All other inputs=VIL or VIH
Read
12
mA
All outputs = open, VDD=VDD Max
Write
24
mA
See Note2
ISB
Standby VDD Current
(LPC Interface)
100
µA
LCLK (LPC mode) and Address Input (PP mode)=VILT/VIHT
at f=33 MHz (LPC mode) or 1/TRC min (PP Mode)
LFRAME#=0.9 VDD, f=33 MHz, CE#=0.9 VDD,
VDD=VDD Max, All other inputs ≥ 0.9 VDD or ≤ 0.1 VDD
IRY3
Ready Mode VDD Current
(LPC Interface)
10
mA
LCLK (LPC mode) and Address Input (PP mode)=VILT/VIHT
at f=33 MHz (LPC mode) or 1/TRC min (PP Mode)
LFRAME#=VIL, f=33 MHz, VDD=VDD Max
All other inputs ≥ 0.9 VDD or ≤ 0.1 VDD
II
Input Current for Mode
and ID[3:0] pins
200
µA
VIN=GND to VDD, VDD=VDD Max
ILI
Input Leakage Current
1
µA
VIN=GND to VDD, VDD=VDD Max
ILO
Output Leakage Current
1
µA
VOUT=GND to VDD, VDD=VDD Max
VIHI
INIT# Input High Voltage
VDD+0.5
V
VDD=VDD Max
VILI
INIT# Input Low Voltage
-0.5
0.4
V
VDD=VDD Min
VIL
Input Low Voltage
-0.5
0.3 VDD
V
VDD=VDD Min
0.5 VDD
VDD+0.5
V
VDD=VDD Max
0.1 VDD
V
IOL=1500 µA, VDD=VDD Min
V
IOH=-500 µA, VDD=VDD Min
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
1.1
0.9 VDD
T12.2 1206
1. IDD active while a Read or Write (Program or Erase) operation is in progress.
2. For PP Mode: OE# = WE# = VIH; For LPC Mode: f = 1/TRC min, LFRAME# = VIH, CE# = VIL.
3. The device is in Ready mode when no activity is on the LPC bus.
TABLE 13: Recommended System Power-up Timings
Symbol
TPU-READ
Parameter
1
TPU-WRITE1
Minimum
Units
Power-up to Read Operation
100
µs
Power-up to Write Operation
100
µs
T13.0 1206
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter
TABLE 14: Pin Capacitance (VDD=3.3V, Ta=25 °C, f=1 Mhz, other pins open)
Parameter
CI/O
1
CIN1
Description
Test Condition
Maximum
I/O Pin Capacitance
VI/O=0V
12 pF
Input Capacitance
VIN=0V
12 pF
T14.0 1206
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2006 Silicon Storage Technology, Inc.
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2 Mbit LPC Flash
SST49LF020A
Data Sheet
TABLE 15: Reliability Characteristics
Symbol
Parameter
Minimum
Specification
Units
Test Method
NEND1
Endurance
10,000
Cycles
JEDEC Standard A117
100
Years
100 + IDD
mA
TDR
1
ILTH1
Data Retention
Latch Up
JEDEC Standard A103
JEDEC Standard 78
T15.0 1206
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 16: Clock Timing Parameters (LPC Mode)
Symbol
Parameter
TCYC
LCLK Cycle Time
Min
30
Max
Units
ns
THIGH
LCLK High Time
11
ns
TLOW
LCLK Low Time
11
ns
-
LCLK Slew Rate (peak-to-peak)
1
-
RST# or INIT# Slew Rate
50
4
V/ns
mV/ns
T16.0 1206
Tcyc
Thigh
0.6 VDD
Tlow
0.5 VDD
0.4 VDD p-to-p
(minimum)
0.4 VDD
0.3 VDD
0.2 VDD
1206 F14.0
FIGURE 13: LCLK Waveform (LPC Mode)
©2006 Silicon Storage Technology, Inc.
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2 Mbit LPC Flash
SST49LF020A
Data Sheet
TABLE 17: Reset Timing Parameters, VDD=3.0-3.6V (LPC Mode)
Symbol
Parameter
TPRST
VDD stable to Reset Low
Min
Max
Units
1
ms
TKRST
Clock Stable to Reset Low
100
µs
TRSTP
RST# Pulse Width
100
ns
TRSTF
RST# Low to Output Float
TRST1
RST# High to LFRAME# Low
TRSTE
RST# Low to reset during Sector-/Block-Erase or Program
48
ns
1
µs
10
µs
T17.0 1206
1. There may be additional latency due toTRSTE if a reset procedure is performed during a Program or Erase operation.
VDD
TPRST
CLK
TKRST
TRSTP
RST#/INIT#
TRSTE
TRST
TRSTF
Sector-/Block-Erase
or Program operation
aborted
LAD[3:0]
LFRAME#
1206 F15.0
FIGURE 14: Reset Timing Diagram (LPC Mode)
TABLE 18: Read/Write Cycle Timing Parameters, VDD=3.0-3.6V (LPC Mode)
Symbol
Parameter
TCYC
Clock Cycle Time
Min
30
Max
Units
ns
TSU
Data Set Up Time to Clock Rising
7
ns
TDH
Clock Rising to Data Hold Time
0
ns
TVAL1
Clock Rising to Data Valid
2
TBP
Byte Programming Time
TSE
Sector-Erase Time
25
ms
TBE
Block-Erase Time
25
ms
TON
Clock Rising to Active (Float to Active Delay)
TOFF
Clock Rising to Inactive (Active to Float Delay)
28
ns
11
ns
20
µs
2
ns
T18.0 1206
1. Minimum and maximum times have different loads. See PCI spec.
©2006 Silicon Storage Technology, Inc.
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2 Mbit LPC Flash
SST49LF020A
Data Sheet
TABLE 19: AC Input/Output Specifications (LPC Mode)
Symbol
Parameter
IOH(AC)
Switching Current High
Min
Max
Units
0 < VOUT ≤ 0.3 VDD
0.3 VDD < VOUT < 0.9 VDD
0.7 VDD < VOUT < VDD
-32 VDD
mA
VOUT = 0.7 VDD
Equation D1
mA
mA
VDD >VOUT ≥ 0.6 VDD
0.6 VDD > VOUT > 0.1 VDD
0.18 VDD > VOUT > 0
Equation C1
(Test Point)
IOL(AC)
Switching Current Low
16 VDD
26.7 VOUT
ICL
Low Clamp Current
-25+(VIN+1)/0.015
25+(VIN-VDD-1)/0.015
(Test Point)
Conditions
mA
mA
-12 VDD
-17.1(VDD-VOUT)
38 VDD
mA
VOUT = 0.18 VDD
mA
-3 < VIN ≤-1
ICH
High Clamp Current
mA
VDD+4 > VIN ≥ VDD+1
slewr2
Output Rise Slew Rate
1
4
V/ns
0.2 VDD-0.6 VDD load
slewf2
Output Fall Slew Rate
1
4
V/ns
0.6 VDD-0.2 VDD load
T19.0 1206
1. See PCI spec.
2. PCI specification output load is used.
VTH
LCLK
VTEST
VTL
TVAL
LAD [3:0]
(Valid Output Data)
LAD [3:0]
(Float Output Data)
TON
TOFF
1206 F16.0
FIGURE 15: Output Timing Parameters (LPC Mode)
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2 Mbit LPC Flash
SST49LF020A
Data Sheet
VTH
VTEST
LCLK
VTL
TSU
TDH
LAD [3:0]
(Valid Input Data)
Inputs
Valid
VMAX
1206 F17.0
FIGURE 16: Input Timing Parameters (LPC Mode)
TABLE 20: Interface Measurement Condition Parameters (LPC Mode)
Symbol
Value
Units
1
0.6 VDD
V
VTL1
0.2 VDD
V
VTEST
0.4 VDD
V
VMAX1
0.4 VDD
V
1
V/ns
VTH
Input Signal Edge Rate
T20.0 1206
1. The input test environment is done with 0.1 VDD of overdrive over VIH and VIL. Timing parameters must be met with no more overdrive than this. VMAX specified the maximum peak-to-peak waveform allowed for measuring input timing. Production testing may use
different voltage values, but must correlate results back to these parameters
©2006 Silicon Storage Technology, Inc.
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5/06
2 Mbit LPC Flash
SST49LF020A
Data Sheet
TABLE 21: Read Cycle Timing Parameters, VDD=3.0-3.6V (PP Mode)
Symbol
Parameter
Min
TRC
Read Cycle Time
270
Max
Units
TRST
RST# High to Row Address Setup
1
µs
TAS
R/C# Address Set-up Time
45
ns
TAH
R/C# Address Hold Time
45
TAA
Address Access Time
TOE
Output Enable Access Time
TOLZ
OE# Low to Active Output
TOHZ
OE# High to High-Z Output
TOH
Output Hold from Address Change
ns
ns
120
60
0
ns
ns
ns
35
0
ns
ns
T21.0 1206
TABLE 22: Program/Erase Cycle Timing Parameters, VDD=3.0-3.6V (PP Mode)
Symbol
Parameter
Min
Max
Units
TRST
RST# High to Row Address Setup
1
µs
TAS
R/C# Address Setup Time
50
ns
TAH
R/C# Address Hold Time
50
ns
TCWH
R/C# to Write Enable High Time
50
ns
TOES
OE# High Setup Time
20
ns
TOEH
OE# High Hold Time
20
ns
TOEP
OE# to Data# Polling Delay
40
ns
TOET
OE# to Toggle Bit Delay
40
ns
TWP
WE# Pulse Width
100
ns
TWPH
WE# Pulse Width High
100
ns
TDS
Data Setup Time
50
ns
TDH
Data Hold Time
5
ns
TIDA
Software ID Access and Exit Time
150
ns
TBP
Byte Programming Time
20
µs
TSE
Sector-Erase Time
25
ms
TBE
Block-Erase Time
25
ms
TSCE
Chip-Erase Time
100
ms
T22.0 1206
TABLE 23: Reset Timing Parameters, VDD=3.0-3.6V (PP Mode)
Symbol
Parameter
Min
Max
Units
TPRST
VDD stable to Reset Low
TRSTP
RST# Pulse Width
TRSTF
RST# Low to Output Float
TRST1
RST# High to Row Address Setup
TRSTE
RST# Low to reset during Sector-/Block-Erase or Program
10
µs
TRSTC
RST# Low to reset during Chip-Erase
50
µs
1
ms
100
ns
48
1
ns
µs
T23.0 1206
1. There may be additional reset latency due to TRSTE or TRSTC if a reset procedure is performed during a Program or Erase operation.
©2006 Silicon Storage Technology, Inc.
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2 Mbit LPC Flash
SST49LF020A
Data Sheet
VDD
TPRST
Addresses
Row Address
R/C#
TRSTP
RST#
Sector-/Block-Erase
or Program operation
aborted
TRSTE
TRSTC
TRST
TRSTF
Chip-Erase
aborted
DQ7-0
1206 F18.0
FIGURE 17: Reset Timing Diagram (PP Mode)
RST#
TRST
TRC
Row Address
Addresses
TAS
TAH
Column Address
TAS
Row Address
Column Address
TAH
R/C#
WE#
VIH
TAA
TOH
OE#
TOE
TOLZ
High-Z
TOHZ
Data Valid
DQ7-0
High-Z
1206 F19.0
FIGURE 18: Read Cycle Timing Diagram (PP Mode)
©2006 Silicon Storage Technology, Inc.
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5/06
2 Mbit LPC Flash
SST49LF020A
Data Sheet
TRST
RST#
Row Address
Addresses
TAS
Column Address
TAH
TAS
TAH
R/C#
TCWH
OE#
TOES
TOEH
TWPH
TWP
WE#
TDH
TDS
Data Valid
DQ7-0
1206 F20.0
FIGURE 19: Write Cycle Timing Diagram (PP Mode)
Addresses
Row
Column
R/C#
WE#
OE#
TOEP
DQ7
D
D#
D#
D
1206 F21.0
FIGURE 20: Data# Polling Timing Diagram (PP Mode)
©2006 Silicon Storage Technology, Inc.
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2 Mbit LPC Flash
SST49LF020A
Data Sheet
Addresses
Row
Column
R/C#
WE#
OE#
TOET
DQ6
D
D
1206 F22.0
FIGURE 21: Toggle Bit Timing Diagram (PP Mode)
A14-0
(Internal AMS-0)
5555
2AAA
5555
BA
R/C#
OE#
WE#
DQ7-0
Internal Program Starts
AA
55
A0
BA = Byte-Program Address
AMS = Most Significant Address
DATA
1206 F23.0
FIGURE 22: Byte-Program Timing Diagram (PP Mode)
©2006 Silicon Storage Technology, Inc.
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5/06
2 Mbit LPC Flash
SST49LF020A
Data Sheet
A14-0
(Internal AMS-0)
5555
2AAA
5555
5555
2AAA
SAX
R/C#
OE#
WE#
Internal Erase Starts
55
AA
DQ7-0
80
AA
55
30
SAX = Sector Address
1206 F24.0
FIGURE 23: Sector-Erase Timing Diagram (PP Mode)
A14-0
(Internal AMS-0)
5555
2AAA
5555
5555
2AAA
BAX
R/C#
OE#
WE#
Internal Erase Starts
DQ7-0
AA
55
80
BAX = Block Address
AA
55
50
1206 F25.0
FIGURE 24: Block-Erase Timing Diagram (PP Mode)
©2006 Silicon Storage Technology, Inc.
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5/06
2 Mbit LPC Flash
SST49LF020A
Data Sheet
A14-0
(Internal AMS-0)
5555
2AAA
5555
5555
2AAA
5555
R/C#
OE#
WE#
Internal Erase Starts
55
AA
DQ7-0
80
AA
55
10
1206 F26.0
FIGURE 25: Chip-Erase Timing Diagram (PP Mode)
A14-0
(Internal AMS-0)
2AAA
5555
5555
0000
0001
R/C#
OE#
TWP
WE#
55
AA
DQ7-0
TAA
TIDA
TWPH
BF
90
Device ID
1206 F27.0
Note: Device ID = 52H for SST49LF020A
FIGURE 26: Software ID Entry and Read (PP Mode)
A14-0
(Internal AMS-0)
2AAA
5555
5555
R/C#
OE#
TIDA
WE#
DQ7-0
55
AA
F0
1206 F28.0
FIGURE 27: Software ID Exit (PP Mode)
©2006 Silicon Storage Technology, Inc.
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2 Mbit LPC Flash
SST49LF020A
Data Sheet
VIHT
INPUT
VIT
REFERENCE POINTS
VOT
OUTPUT
VILT
1206 F29.0
AC test inputs are driven at VIHT (0.9 VDD) for a logic “1” and VILT (0.1 VDD) for a logic “0”. Measurement reference
points for inputs and outputs are VIT (0.5 VDD) and VOT (0.5 VDD). Input rise and fall times (10% ↔ 90%) are <3 ns.
Note: VIT - VINPUT Test
VOT - VOUTPUT Test
VIHT - VINPUT HIGH Test
VILT - VINPUT LOW Test
FIGURE 28: AC Input/Output Reference Waveforms
TO TESTER
TO DUT
CL
1206 F30.0
FIGURE 29: A Test Load Example
©2006 Silicon Storage Technology, Inc.
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5/06
2 Mbit LPC Flash
SST49LF020A
Data Sheet
Address: 5555H
Write Data: AAH
Cycle: 1
Address: 2AAAH
Write Data: 55H
Cycle: 2
Read
Command Sequence
Address: AIN
Read Data: DOUT
Cycle: 1
Address: 5555H
Write Data: A0H
Cycle: 3
Available for
Next Command
Address: AIN
Write Data: DIN
Cycle: 4
1206 F31.0
Wait TBP
Available for
Next Byte
1206 F32.0
FIGURE 30: Read Flowchart
(LPC Mode)
FIGURE 31: Byte-Program Flowchart
(LPC Mode)
©2006 Silicon Storage Technology, Inc.
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2 Mbit LPC Flash
SST49LF020A
Data Sheet
Block-Erase
Command Sequence
Sector-Erase
Command Sequence
Address: 5555H
Write Data: AAH
Cycle: 1
Address: 5555H
Write Data: AAH
Cycle: 1
Address: 2AAAH
Write Data: 55H
Cycle: 2
Address: 2AAAH
Write Data: 55H
Cycle: 2
Address: 5555H
Write Data: 80H
Cycle: 3
Address: 5555H
Write Data: 80H
Cycle: 3
Address: 5555H
Write Data: AAH
Cycle: 4
Address: 5555H
Write Data: AAH
Cycle: 4
Address: 2AAAH
Write Data: 55H
Cycle: 5
Address: 2AAAH
Write Data: 55H
Cycle: 5
Address: BAX
Write Data: 50H
Cycle: 6
Address: SAX
Write Data: 30H
Cycle: 6
Wait TBE
Wait TSE
Block erased
to FFH
Sector erased
to FFH
Available for
Next Command
Available for
Next Command
1206 F33.0
FIGURE 32: Erase Command Sequences Flowchart (LPC Mode)
©2006 Silicon Storage Technology, Inc.
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2 Mbit LPC Flash
SST49LF020A
Data Sheet
Software Product ID Entry
Command Sequence
Software Product ID Exit
Command Sequence
Address: 5555H
Write Data: AAH
Cycle: 1
Address: 5555H
Write Data: AAH
Cycle: 1
Address: XXXXH
Write Data: F0H
Cycle: 1
Address: 2AAAH
Write Data: 55H
Cycle: 2
Address: 2AAAH
Write Data: 55H
Cycle: 2
Wait TIDA
Address: 5555H
Write Data: 90H
Cycle: 3
Address: 5555H
Write Data: F0H
Cycle: 3
Available for
Next Command
Wait TIDA
Wait TIDA
Address: 0001H
Read Data: BFH
Cycle: 4
Available for
Next Command
Address: 0002H
Read Data:
Cycle: 5
Available for
Next Command
Note: X can be VIL or VIH, but no other value.
1206 F34.0
FIGURE 33: Software Product ID Command Sequences Flowchart (LPC Mode)
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2 Mbit LPC Flash
SST49LF020A
Data Sheet
Start
Write data: AAH
Address: 5555H
Write data: 55H
Address: 2AAAH
Write data: A0H
Address: 5555H
Load Byte
Address/Byte
Data
Wait for end of
Program (TBP,
Data# Polling
bit, or Toggle bit
operation)
Program
Completed
1206 F35.0
FIGURE 34: Byte-Program Command Sequences Flowchart (PP Mode)
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2 Mbit LPC Flash
SST49LF020A
Data Sheet
Internal Timer
Toggle Bit
Data# Polling
ByteProgram/Erase
Initiated
ByteProgram/Erase
Initiated
ByteProgram/Erase
Initiated
Wait TBP,
TSCE, TBE,
or TSE
Read byte
Read DQ7
Read same
byte
Program/Erase
Completed
No
Is DQ7 =
true data?
Yes
No
Does DQ6
match?
Program/Erase
Completed
Yes
Program/Erase
Completed
1206 F36.0
FIGURE 35: Wait Options Flowchart (PP Mode)
©2006 Silicon Storage Technology, Inc.
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2 Mbit LPC Flash
SST49LF020A
Data Sheet
Software Product ID Entry
Command Sequence
Software Product ID Exit
Command Sequence
Write data: AAH
Address: 5555H
Write data: AAH
Address: 5555H
Write data: F0H
Address: XXH
Write data: 55H
Address: 2AAAH
Write data: 55H
Address: 2AAAH
Wait TIDA
Write data: 90H
Address: 5555H
Write data: F0H
Address: 5555H
Return to normal
operation
Wait TIDA
Wait TIDA
Read Software ID
Return to normal
operation
1206 F37.0
FIGURE 36: Software Product ID Command Sequences Flowchart (PP Mode)
©2006 Silicon Storage Technology, Inc.
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2 Mbit LPC Flash
SST49LF020A
Data Sheet
Chip-Erase
Command Sequence
Block-Erase
Command Sequence
Sector-Erase
Command Sequence
Write data: AAH
Address: 5555H
Write data: AAH
Address: 5555H
Write data: AAH
Address: 5555H
Write data: 55H
Address: 2AAAH
Write data: 55H
Address: 2AAAH
Write data: 55H
Address: 2AAAH
Write data: 80H
Address: 5555H
Write data: 80H
Address: 5555H
Write data: 80H
Address: 5555H
Write data: AAH
Address: 5555H
Write data: AAH
Address: 5555H
Write data: AAH
Address: 5555H
Write data: 55H
Address: 2AAAH
Write data: 55H
Address: 2AAAH
Write data: 55H
Address: 2AAAH
Write data: 10H
Address: 5555H
Write data: 50H
Address: BAX
Write data: 30H
Address: SAX
Wait TSCE
Wait TBE
Wait TSE
Chip erased
to FFH
Block erased
to FFH
Sector erased
to FFH
1206 F38.0
FIGURE 37: Erase Command Sequence Flowchart (PP Mode)
©2006 Silicon Storage Technology, Inc.
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2 Mbit LPC Flash
SST49LF020A
Data Sheet
PRODUCT ORDERING INFORMATION
Device
Speed
SST49LF0x0A - XXX
Suffix1
-
XX
Suffix2
-
XX X
Environmental Attribute
E1 = non-Pb
Package Modifier
H = 32 leads
Package Type
N = PLCC
W = TSOP (type 1, die up, 8mm x 14mm)
Operating Temperature
C = Commercial = 0°C to +85°C
Minimum Endurance
4 = 10,000 cycles
Serial Access Clock Frequency
33 = 33 MHz
Device Density
020 = 2 Mbit
Voltage Range
L = 3.0-3.6V
Product Series
49 = LPC Firmware Flash
1. Environmental suffix “E” denotes non-Pb solder.
SST non-Pb solder devices are “RoHS Compliant”.
Valid combinations for SST49LF020A
SST49LF020A-33-4C-WHE SST49LF020A-33-4C-NHE
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations and to determine availability of new combinations.
©2006 Silicon Storage Technology, Inc.
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2 Mbit LPC Flash
SST49LF020A
Data Sheet
PACKAGING DIAGRAMS
TOP VIEW
Optional
Pin #1
Identifier .048
.042
SIDE VIEW
.495
.485
.453
.447
2
1
32
.112
.106
.020 R.
MAX.
.029 x 30˚
.023
.040 R.
.030
.042
.048
.595 .553
.585 .547
BOTTOM VIEW
.021
.013
.400 .530
BSC .490
.032
.026
.050
BSC
.015 Min.
.095
.075
.050
BSC
.140
.125
.032
.026
Note: 1. Complies with JEDEC publication 95 MS-016 AE dimensions, although some dimensions may be more stringent.
2. All linear dimensions are in inches (max/min).
3. Dimensions do not include mold flash. Maximum allowable mold flash is .008 inches.
4. Coplanarity: 4 mils.
32-plcc-NH-3
FIGURE 38: 32-lead Plastic Lead Chip Carrier (PLCC)
SST Package Code: NH
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2 Mbit LPC Flash
SST49LF020A
Data Sheet
1.05
0.95
Pin # 1 Identifier
0.50
BSC
8.10
7.90
0.27
0.17
0.15
0.05
12.50
12.30
DETAIL
1.20
max.
0.70
0.50
14.20
13.80
0˚- 5˚
0.70
0.50
Note:
1. Complies with JEDEC publication 95 MO-142 BA dimensions,
although some dimensions may be more stringent.
1mm
2. All linear dimensions are in millimeters (max/min).
3. Coplanarity: 0.1 mm
4. Maximum allowable mold flash is 0.15 mm at the package ends, and 0.25 mm between leads.
32-tsop-WH-7
FIGURE 39: 32-lead Thin Small Outline Package (TSOP) 8mm x 14mm
SST Package Code: WH
©2006 Silicon Storage Technology, Inc.
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2 Mbit LPC Flash
SST49LF020A
Data Sheet
TABLE 24: Revision History
Number
Description
Date
00
•
Initial release
Sep 2001
01
•
Added SST49LF030A to the data sheet
Jan 2002
02
•
Added SST49LF020A to the data sheet
May 2002
03
•
Corrected LFRAME and CE# test conditions for Standby VDD current in Table 18
Jul 2002
04
•
•
Removed SST49LF040A from the data sheet
Added support for bottom address space to SST49LF030A
Nov 2002
05
•
•
•
•
Moved SST49LF030A from this data sheet (S71206) to data sheet S71234
Moved SST49LF080A from this data sheet (S71206) to data sheet S71235
Changed status from “Preliminary Specifications” to “Data Sheet”
Added switching inputs into Test Conditions for IDD
Apr 2003
06
•
•
2004 Data Book
Added non-Pb MPNs and removed footnote. (See page 47)
Dec 2003
07
•
•
•
•
Added statement that non-Pb devices are RoHS compliant to Features section
Updated Surface Mount Solder Reflow Temperature information
Added footnote to Product Ordering Information section
Removed leaded part numbers
Jan 2006
08
•
Updated Table 5 on page 12
May 2006
Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036
www.SuperFlash.com or www.sst.com
©2006 Silicon Storage Technology, Inc.
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