Bulletin I25185 rev. C 03/03 ST083S SERIES Stud Version INVERTER GRADE THYRISTORS Features Center amplifying gate 85A High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating All types of force-commutated converters Major Ratings and Characteristics Parameters ST083S Units 85 A 85 °C 135 A @ 50Hz 2450 A @ 60Hz 2560 A @ 50Hz 30 KA2s @ 60Hz 27 KA2s 400 to 1200 V 10 to 20 µs - 40 to 125 °C IT(AV) @ TC IT(RMS) ITSM I2t V DRM /V RRM tq range (see table) TJ www.irf.com case style TO-209AC (TO-94) 1 ST083S Series Bulletin I25185 rev. C 03/03 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /V RRM, maximum VRSM , maximum I DRM/I RRM max. Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max. V V mA 400 500 Type number 04 ST083S 08 800 900 10 1000 1100 12 1200 1300 30 Current Carrying Capability ITM Frequency ITM ITM o 180 el o 180 el Units 100µs 50Hz 400Hz 210 200 120 120 330 350 270 210 2540 1190 1930 810 1000Hz 150 80 320 190 630 400 2500Hz 70 25 220 85 250 100 Recovery voltage Vr Voltage before turn-on Vd 50 50 50 50 50 V DRM V DRM 50 V DRM A V Rise of on-state current di/dt 50 50 - - - - A/µs Case temperature 60 85 60 85 60 85 °C Equivalent values for RC circuit 22Ω / 0.15µF 22Ω / 0.15µF 22Ω / 0.15µF On-state Conduction Parameter I T(AV) I 2t Units Conditions 85 A @ Case temperature 85 °C I T(RMS) Max. RMS on-state current I TSM ST083S Max. average on-state current 135 Max. peak, one half cycle, 2450 non-repetitive surge current 2560 Maximum I2t for fusing DC @ 77°C case temperature t = 10ms A reapplied 2060 t = 10ms 100% VRRM 2160 t = 8.3ms reapplied Sinusoidal half wave, 30 t = 10ms No voltage Initial TJ = TJ max t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied 21 KA2s 19 2 Maximum I2√t for fusing No voltage t = 8.3ms 27 I 2√t 180° conduction, half sine wave 300 KA2√s t = 0.1 to 10ms, no voltage reapplied www.irf.com ST083S Series Bulletin I25185 rev. C 03/03 On-state Conduction Parameter V TM Max. peak on-state voltage V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage rt1 Low level value of forward slope resistance ST083S 1.46 V mΩ 600 IL Typical latching current 1000 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. 2.32 IH Conditions ITM= 300A, TJ = TJ max, tp = 10ms sine wave pulse 1.52 High level value of forward slope resistance Maximum holding current rt2 Units 2.15 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. 2.34 mA T J = 25°C, I T > 30A T J = 25°C, V A= 12V, Ra = 6Ω, I G = 1A Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current td Typical delay time tq Max. turn-off time ST083S 1000 Units Conditions A/µs TJ = TJ max, VDRM = rated VDRM TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs 0.80 Min 10 Max 20 ITM = 2 x di/dt µs Resistive load, Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 100A, commutating di/dt = 10A/µs VR = 50V, tp = 200µs, dv/dt = 200V/µs Blocking Parameter ST083S Units Conditions TJ = TJ max., linear to 80% VDRM, higher value available on request dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs IRRM IDRM Max. peak reverse and off-state leakage current 30 mA ST083S Units TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power PG(AV) Maximum average gate power 5 IGM Max. peak positive gate current 5 +VGM Maximum peak positive gate voltage 20 -VGM Maximum peak negative gate voltage 5 IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger W TJ = TJ max, f = 50Hz, d% = 50 A TJ = TJ max, tp ≤ 5ms V TJ = TJ max, tp ≤ 5ms 200 mA 3 V TJ = 25°C, VA = 12V, Ra = 6Ω IGD Max. DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V www.irf.com Conditions 40 TJ = TJ max, rated VDRM applied 3 ST083S Series Bulletin I25185 rev. C 03/03 Thermal and Mechanical Specifications Parameter ST083S TJ Max. junction operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJC Max. thermal resistance, junction to case 0.195 RthCS Max. thermal resistance, case to heatsink 0.08 T Mounting torque, ± 10% wt Approximate weight Case style Units Conditions °C DC operation K/W Mounting surface, smooth, flat and greased 15.5 Nm (137) (Ibf-in) 14 Nm (120) (Ibf-in) 130 g Non lubricated threads Lubricated threads TO-209AC (TO-94) See Outline Table ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units 180° 0.034 Conditions 0.025 120° 0.041 0.042 90° 0.052 0.056 60° 0.076 0.079 30° 0.126 0.127 K/W TJ = TJ max. Ordering Information Table Device Code ST 08 3 S 12 P F N 0 1 2 3 4 5 6 7 8 9 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - S = Compression bonding Stud 5 - Voltage code: Code x 100 = VRRM (See Voltage Ratings Table) 6 - P = Stud Base 1/2"-20UNF-2A threads 7 - Reapplied dv/dt code (for tq Test Condition) 8 - tq code 9 - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) 1 = Fast-on terminals (Gate and Aux. Cathode Leads) 4 dv/dt - tq combinations available dv/dt (V/µs) 200 tq(µs) up to 800V 10 20 FN FK tq(µs) only for 1000/1200V 20 FK www.irf.com ST083S Series Bulletin I25185 rev. C 03/03 Outline Table CERAMIC HOUSING 16.5 (0.65) MAX. 8.5 (0.33) DIA. 37 )M IN . 2.6 (0.10) MAX. C.S. 0.4 mm 2 (.0006 s.i.) 170 (6.69) 157 (6.18) RED SILICON RUBBER IN . (0 . FLEXIBLE LEAD 79 )M 9 .5 (0 . 4.3 (0.17) DIA 20 C.S. 16mm 2 (.025 s.i.) Fast-on Terminals RED CATHODE AMP. 280000-1 REF-250 WHITE GATE 10 (0.39) WHITE SHRINK MAX. 21 (0.83) 22.5 (0.88) MAX. DIA. 12.5 (0.49) MAX. 29 (1.14) MAX. 70 (2.75) MIN. 215 (8.46) RED SHRINK SW 27 1/2"-20UNF-2A Case Style TO-209AC (TO-94) 29.5 (1.16) Maximum Allowable Case Temperature (°C) MAX. 130 ST083SSeries RthJC (DC) = 0.195 K/ W 120 110 Conduc tion Angle 100 30° 90 60° 90° 120° 180° 80 0 10 20 30 40 50 60 70 80 90 Maximum Allowable Case Temperature (°C) All dimensions in millimeters (inches) 130 ST083S Series RthJC (DC) = 0.195 K/ W 120 110 Conduction Period 100 90 30° 80 60° 90° 120° 180° DC 70 0 20 40 60 80 100 120 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.irf.com 140 5 ST083S Series 180 W K/ .1 =0 W K/ K/ W K/ W elt -D 120 0. 4 0. 5 W K/ 140 3 0. 180° 120° 90° 60° 30° 160 A hS R t 2 0. a 100 R Maximum Average On-state Power Loss (W) Bulletin I25185 rev. C 03/03 0.8 K/ W RMS Limit 80 60 1.2 K/ W Conduc tion Angle 40 ST083S Series TJ = 125°C 20 0 0 10 20 30 40 50 60 70 80 90 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Average On-state Current (A) 250 DC 180° 120° 90° 60° 30° = K/ W 1 0. W K/ 0. 3 K/ W 0.4 K/ 0.5 W K/ W R 100 RMS Limit ta el -D 150 0. 2 SA th 200 R Maximum Average On-state Power Loss(W) Fig. 3 - On-state Power Loss Characteristics 0.8 K/ W Conduction Period 1.2 K/ W ST083S Series TJ = 125°C 50 0 0 20 40 60 80 100 120 Average On-state Current (A) 140 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) 2200 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 2000 1800 1600 1400 1200 ST083SSeries 1000 1 10 100 Number Of Equa l Amplitude Ha lf Cyc le Current Pulses (N) Fig. 5 - Maximum Non-repetitive Surge Current 6 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Fig. 4 - On-state Power Loss Characteristics 2600 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C 2200 No Voltage Reapplied Rated VRRM Reapplied 2000 2400 1800 1600 1400 1200 ST083SSeries 1000 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-repetitive Surge Current www.irf.com ST083S Series Bulletin I25185 rev. C 03/03 Transient Thermal Impedance Z thJC (K/ W) Instantaneous On-state Current (A) 10000 TJ = 25°C 1000 TJ = 125°C ST083S Series 100 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 1 Steady State Value RthJC = 0.195 K/ W (DC Operation) 0.1 ST083S Series 0.01 0.001 0.01 Instantaneous On-state Voltage (V) Maximum Reverse Rec overy Current - Irr (A) Maximum Reverse Recovery Charge - Qrr (µC) 160 ITM = 500 A ST083SSeries TJ = 125 °C 300 A 120 200 A 100 100 A 80 60 50 A 40 20 10 20 30 40 50 60 70 80 1 10 Fig. 8 - Thermal Impedance ZthJC Characteristic Fig. 7 - On-state Voltage Drop Characteristics 140 0.1 Square Wave Pulse Duration (s) 90 100 120 I TM = 500 A 110 100 300 A 90 200 A 80 100 A 70 50 A 60 50 40 ST083SSeries TJ = 125 °C 30 20 10 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/ dt (A/ µs) Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 9 - Reverse Recovered Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics Peak On-state Current (A) 1E4 Snub ber circuit R s = 22 ohms C s = 0.15 µF V D = 80% VDRM Snubb er circ uit Rs = 22 ohms Cs = 0.15 µF V D = 80% VDRM 1E3 1500 1000 500 400 200 100 50 Hz 2000 2500 3000 1500 500 400 200 100 50 Hz 2000 1E2 2500 ST083SSeries Sinusoida l p ulse TC = 60°C tp 1E1 1E1 1000 1E2 1E3 ST083SSeries Sinusoidal pulse TC = 85°C 3000 1E1 1E 4 1E1 1E4 tp 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 11 - Frequency Characteristics www.irf.com 7 ST083S Series Bulletin I25185 rev. C 03/03 Peak On-stat e Current (A) 1E4 Snub ber c ircuit R s = 22 ohms C s = 0.15 µF V D = 80% VDRM ST083SSeries Trap ezoid al p ulse TC = 85°C tp Snub ber c ircuit R s = 22 ohms C s = 0.15 µF V D = 80% VDRM d i/dt = 50A/ µs 1E3 2000 2500 1E2 1500 1000 50 Hz 200 100 500 400 400 200 100 50 Hz 1500 3000 ST083SSeries Trap ezoid al p ulse TC = 60°C di/ dt = 50A/ µs tp 1E1 1E1 500 1000 1E2 2000 2500 1E1 1E4 1E 4 1E1 1E3 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 12 - Frequency Characteristics Peak On-st ate Current (A) 1E4 Snubb er circ uit Rs = 22 ohms Cs = 0.15 µF V D = 80% VDRM ST083SSeries Trapezoidal pulse TC = 85°C tp Snub ber c ircuit R s = 22 ohms C s = 0.15 µF V D = 80% VDRM di/ dt = 100A/ µs 1E3 400 200 500 1000 100 50 Hz 500 1500 2000 1E2 200 100 50 Hz 1000 2500 ST083SSeries Tra pezoidal pulse TC = 60°C 3000 tp 1E1 1E1 400 1E2 di/ dt = 100A/ µs 1E3 1500 2000 2500 1E4 1E 4 1E1 1E1 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics 1E4 ST083SSeries Rectangula r pulse Peak On-state Current (A) 20 joules per pulse 1E3 0.5 1 2 3 5 tp 10 di/ dt = 50A/ µs 2 0.3 4 20 joules p er pulse 7.5 1 0.2 0.5 0.3 0.1 0.2 1E2 0.1 ST083SSeries Sinusoida l p ulse tp 1E1 1E1 1E2 1E3 Pulse Basewidth (µs) 1E1 1E4 1E41E1 1E2 1E3 1E4 Pulse Basewidth (µs) Fig. 14 - Maximum On-state Energy Power Loss Characteristics 8 www.irf.com ST083S Series Bulletin I25185 rev. C 03/03 Rectangular gate pulse a) Rec ommended load line for rated di/ dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 µs (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp tp tp tp = 20ms = 10ms = 5ms = 3.3ms (a ) (b) Tj=-40 °C Tj=125 °C 1 Tj=25 °C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 0.01 Device: ST083S Series 0.1 Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 15 - Gate Characteristics Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 03 /03 www.irf.com 9