Bulletin I25202 rev. A 01/00 ST1000C..K SERIES Hockey Puk Version PHASE CONTROL THYRISTORS Features 1473A Center amplifying gate Metal case with ceramic insulator International standard case A-24 (K-PUK) High profile hockey-puk Typical Applications DC motor controls Controlled DC power supplies AC controllers case style A-24 (K-PUK) Major Ratings and Characteristics Parameters I T(AV) A 55 °C 2913 A 25 °C @ 50Hz 20.0 KA @ 60Hz 21.2 KA @ 50Hz 2000 KA2s @ 60Hz 1865 KA2s 20000 KA2√s 1200 to 2600 V I T(RMS) @ Ths 2 I t Units 1473 @ Ths I TSM ST1000C..K I 2√t V DRM/VRRM range tq typical 300 µs TJ range - 40 to 125 °C www.irf.com 1 ST1000C..K Series Bulletin I25202 rev. A 01/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number ST1000C..K Voltage VRRM , maximum repetitive V RSM , maximum non- IRRM max. Code peak reverse voltage V repetitive peak rev. voltage V @ TJ = 125°C 12 1200 1300 16 1600 1700 20 2000 2100 22 2200 2300 24 2400 2500 26 2600 2700 mA 100 On-state Conduction Parameter IT(AV) Maximum average on-state current @ Heatsink temperature ST1000C..K Units Conditions 1473 (630) A 180° conduction, half sine wave 55 (85) °C Double side (single side) cooled IT(RMS) Maximum RMS on-state current 6540 A DC @ 25°C heatsink temp. double side cooled ITSM Maximum peak, one-cycle, 20.0 KA t = 10ms No voltage non-repetitive surge current 21.2 t = 8.3ms reapplied 17.0 t = 10ms 100% VRRM 18.1 t = 8.3ms reapplied Sinusoidal half wave, t = 10ms No voltage Initial T J = TJ max. I2t Maximum I2 t for fusing 2000 KA2 s 1865 t = 8.3ms reapplied 1445 t = 10ms 100% VRRM t = 8.3ms reapplied 1360 I2√t Maximum I2 √t for fusing 20000 KA2 √s t = 0.1 to 10ms, no voltage reapplied VT(TO)1 Low level value of threshold voltage 0.950 VT(TO)2 High level value of threshold voltage 1.024 r t1 Low level value of on-state slope resistance 0.283 r t2 High level value of on-state slope resistance 0.265 VTM Maximum on-state voltage drop 1.80 V IH Maximum holding current 600 mA IL Typical latching current 1000 2 V (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), T J = TJ max. mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), T J = TJ max. Ipk = 3000A, TJ = 125°C, tp = 10ms sine pulse T J = 25°C, anode supply 12V resistive load www.irf.com ST1000C..K Series Bulletin I25202 rev. A 01/00 Switching Parameter di/dt ST1000C..K Maximum non repetitive rate of rise 1000 Units Conditions A/µs t d Gate drive 20V, 20Ω, tr < 1µs TJ = TJ max., anode voltage < 80% V DRM of turned-on current Typical delay time 1.9 µs Gate current 1A, di /dt = 1A/µs g V = 0.67% VDRM , TJ = 25°C d t q Typical turn-off time 300 A/µs ITM = 550A, TJ = T J max, di/dt = 40A/µs, VR = 50V dv/dt = 20V/µs, Gate 0V 100Ω, tp < 500µs Blocking Parameter dv/dt ST1000C..K Maximum critical rate of rise of off-state Units Conditions 500 V/µs TJ = TJ max., linear to 80% rated VDRM 100 µs TJ = TJ max., rated VDRM/VRRM applied voltage IRRM Maximum peak reverse and off-state IDRM leakage current Triggering Parameter ST1000C..K Units Conditions PGM Maximum peak gate power 16 W TJ = TJ max., tp < 5ms PG(AV) Maximum peak average gate power 3 W TJ = TJ max., f = 50Hz, d% = 50 TJ = TJ max., tp < 5ms IGM Maximum peak positive gate current 3.0 A + V GM Maximum peak positive gate voltage 20 V - VGM Maximum peak negative gate voltage IGT DC gate current required to trigger VGT DC gate voltage required to trigger 5.0 V TYP. MAX. 200 - 100 200 25°C Max. required gate trigger / current / 50 - TJ = 125°C voltage are the lowest value which 1.4 - TJ = -40°C will trigger all units 12V anode-to- 1.1 3.0 0.9 TJ = -40°C mA V - TJ = 25°C cathode applied TJ = 125°C IGD DC gate current not to trigger 10 mA VGD DC gate voltage not to trigger 0.25 V www.irf.com TJ = TJ = TJ max. Max. gate current / voltage not to trigger is the max. value which will not trigger any units with rated VDRM anode-to-cathode applied 3 ST1000C..K Series Bulletin I25202 rev. A 01/00 Thermal and Mechanical Specifications Parameter ST1000C..K TJ Max. junction operating temperature range - 40 to 125 T stg Max. storage temperature range - 40 to 150 RthJ-hs Max. thermal resistance, junction to 0.042 heatsink 0.006 heatsink wt °C K/W 0.021 RthC-hs Max. thermal resistance, case to F Units Conditions DC operation double side cooled K/W 0.003 Mounting force, ± 10% DC operation single side cooled DC operation single side cooled DC operation double side cooled 24500 N (2500) (Kg) Approximate weight 425 g Case style A-24 (K-PUK) See outline table ∆RthJC Conduction (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Sinusoidal conduction Conduction angle 180° Single Side Double Side 0.003 Rectangular conduction Single Side Double Side 0.002 0.002 0.003 120° 0.004 0.004 0.004 0.004 90° 0.005 0.005 0.005 0.005 60° 0.007 0.007 0.007 0.007 30° 0.012 0.012 0.012 0.012 Units Conditions K/W T J = TJ max. Ordering Information Table Device Code ST 100 0 C 26 K 1 1 2 3 4 5 6 7 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Ratings Table) 6 - K = Puk Case A-24 (K-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 8 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/µsec (Standard selection) L 4 = 1000V/µsec (Special selection) www.irf.com ST1000C..K Series Bulletin I25202 rev. A 01/00 Outline Table 1 (0.04) MIN. TWO PLACES 47.5 (1.87) DIA. MAX. 27.5 (1.08) MAX. TWO PLACES PIN RECEPTACLE AMP. 60598-1 67 (2.6) DIA. MAX. 74.5 (2.9) DIA. MAX. 20° ± 5° 4.75 (0.2) NOM. 44 (1.73) Case Style A-24 (K-PUK) All dimensions in millimeters (inches) 2 HOLES DIA. 3.5 (0.14) x 2.1 (0.1) DEEP Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 130 ST1000C..K Series (Single Side Cooled) R thJ-hs (DC) = 0.042 K/W 120 110 Conduction Angle 100 90 30° 60° 90° 120° 80 180° 70 0 100 200 300 400 500 600 700 Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) CREPAGE DESTANCE 28.88 (1.137) MIN. STRIKE DISTANCE 17.99 (0.708) MIN. 130 ST1000C..K Series (Single Side Cooled) R thJ-hs (DC) = 0.042 K/W 120 110 Conduction Period 100 30° 90 60° 90° 120° 80 180° 70 0 200 400 600 800 DC 1000 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.irf.com 5 ST1000C..KSeries 130 ST1000C..K Series (Double Side Cooled) R thJ-hs(DC) = 0.021 K/W 120 110 100 90 Conduction Angle 80 30˚ 60˚ 90˚ 70 120˚ 60 180˚ 50 40 0 400 800 1200 1600 Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) Bulletin I25202 rev. A 01/00 130 ST1000C..K Series (Double Side Cooled) R thJ-hs(DC) = 0.021 K/W 120 110 100 90 Conduction Period 80 30˚ 60˚ 70 90˚ 120˚ 60 180˚ 50 DC 40 0 400 Average On-state Current (A) Average On-state Current (A) 2500 2000 RMS Limit 1500 1000 Conduction Angle ST1000C..K Series TJ = 125˚C 500 0 0 400 800 1200 1600 4000 DC 180˚ 120˚ 90˚ 60˚ 30˚ 3500 3000 2500 2000 RMS Limit 1500 Conduction Period 1000 ST1000C..K Series T J = 125˚C 500 0 0 500 1000 1500 2000 2500 Average On-state Current (A) Average On-state Current (A) Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics 18000 At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial T J= 125˚C 16000 @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 14000 12000 10000 8000 ST1000C..K Series 6000 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 6 Maximum Average On-state Power Loss (W) 3000 Fig. 4 - Current Ratings Characteristics Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) Fig. 3 - Current Ratings Characteristics 180˚ 120˚ 90˚ 60˚ 30˚ 800 1200 1600 2000 2400 22000 20000 18000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J= 125˚C No Voltage Reapplied Rated V RRMReapplied 16000 14000 12000 10000 8000 ST1000C..K Series 6000 0.01 0.1 1 Pulse Train Duration (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled www.irf.com ST1000C..K Series Bulletin I25202 rev. A 01/00 Instantaneous On-state Current (A) 10000 T = 25˚C J T = 125˚C J 1000 ST1000C..K Series 100 0.5 1 1.5 2 2.5 3 3.5 4 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJ-hs (K/W) Fig. 9 - On-state Voltage Drop Characteristics 0.1 Steady State Value R thJ-hs = 0.42 K/W (Single Side Cooled) R thJ-hs = 0.21 K/W (Double Side Cooled) 0.01 (DC Operation) ST1000C..K Series 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 10 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 µs (1) PGM = 16W, tp = 4ms (2) PGM = 30W, tp = 2ms (3) PGM = 60W, tp = 1ms (a) (b) IGD 0.1 0.001 0.01 Tj=-40 ˚C VGD Tj=25 ˚C 1 Tj=125 ˚C Instantaneous Gate Voltage (V) 100 (1) (2) (3) Frequency Limited by PG(AV) Device: ST100C..K Series 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics www.irf.com 7