ST280SPbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 280 A FEATURES • Center amplifying gate • International standard case TO-209AB (TO-93) • Hermetic metal case with glass-metal seal insulator RoHS COMPLIANT • Compression bonded encapsulation for heavy duty operations such as severe thermal cycling • Lead (Pb)-free TO-209AB (TO-93) • Designed and qualified for industrial level TYPICAL APPLICATIONS PRODUCT SUMMARY • DC motor controls IT(AV) 280 A • Controlled DC power supplies • AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC VALUES UNITS 280 A 85 °C 440 IT(RMS) ITSM I2 t 50 Hz 7850 60 Hz 8220 50 Hz 308 60 Hz 281 VDRM/VRRM tq Typical TJ A kA2s 400/600 V 100 µs - 40 to 125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER ST280S VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 04 400 500 06 600 700 Document Number: 94402 Revision: 11-Aug-08 VRSM, MAXIMUM NON-REPETITIVE IDRM/IRRM MAXIMUM PEAK VOLTAGE AT TJ = TJ MAXIMUM V mA For technical questions, contact: [email protected] 30 www.vishay.com 1 ST280SPbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 280 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at case temperature IT(AV) Maximum RMS on-state current IT(RMS) Maximum peak, one-cycle non-repetitive surge current ITSM VALUES UNITS 180° conduction, half sine wave TEST CONDITIONS 280 A 85 °C DC at 75 °C case temperature 440 t = 10 ms 7850 t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I2√t No voltage reapplied 100 % VRRM reapplied No voltage reapplied 8220 Sinusoidal half wave, initial TJ = TJ maximum 6900 310 220 218 100 % VRRM reapplied 3100 Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.84 VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 0.88 Low level value of on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.50 High level value of on-state slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 0.47 Ipk = 880 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.28 VTM Maximum holding current IH Maximum (typical) latching current IL kA2s 200 t = 0.1 to 10 ms, no voltage reapplied High level value of threshold voltage Maximum on-state voltage A 6600 600 TJ = 25 °C, anode supply 12 V resistive load 1000 (300) kA2√s V mΩ V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 Ω, tr ≤ 1 µs TJ = TJ maximum, anode voltage ≤ 80 % VDRM VALUES UNITS 1000 A/µs Typical delay time td Gate current 1 A, dIg/dt = 1 A/µs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 Typical turn-off time tq ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/µs, VR = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs 100 SYMBOL TEST CONDITIONS VALUES UNITS µs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 30 mA www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 94402 Revision: 11-Aug-08 ST280SPbF Series Phase Control Thyristors (Stud Version), 280 A Vishay High Power Products TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM VALUES TEST CONDITIONS TYP. TJ = TJ maximum, tp ≤ 5 ms 10.0 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 TJ = TJ maximum, tp ≤ 5 ms 3.0 IGT TJ = 25 °C TJ = 125 °C TJ = - 40 °C DC gate voltage required to trigger VGT TJ = 25 °C TJ = 125 °C DC gate current not to trigger IGD DC gate voltage not to trigger VGD TJ = TJ maximum A V 5.0 Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNITS W 20 TJ = TJ maximum, tp ≤ 5 ms TJ = - 40 °C DC gate current required to trigger MAX. 180 - 90 150 40 - 2.9 - 1.8 3.0 1.2 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range TEST CONDITIONS TJ - 40 to 125 Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to case RthJC DC operation 0.105 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.04 Non-lubricated threads 31 (275) Lubricated threads 24.5 (210) Mounting torque, ± 10 % Approximate weight 280 Case style See dimensions - link at the end of datasheet °C K/W N·m (lbf · in) g TO-209AB (TO-93) ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.016 0.012 120° 0.019 0.020 90° 0.025 0.027 60° 0.036 0.037 30° 0.060 0.060 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94402 Revision: 11-Aug-08 For technical questions, contact: [email protected] www.vishay.com 3 ST280SPbF Series Vishay High Power Products Phase Control Thyristors Maximum Allowable Case Temperature (°C) 130 ST280SSeries RthJC (DC) = 0.105 K/ W 120 110 Conduc tion Angle 100 90 30° 60° 90° 120° 180° 80 0 50 100 150 200 250 300 130 ST280S Series RthJC (DC) = 0.105 K/ W 120 110 Conduc tion Period 100 90 30° 80 60° 90° 120° 180° DC 70 0 50 100 150 200 250 300 350 400 450 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 350 180° 120° 90° 60° 30° 150 Conduc tion Angle 100 ST280SSeries TJ = 125°C 50 K/ W R 0.4 RMSLimit K/ W ta el -D 200 W K/ 0.3 1 0. 0. 25 K/ W K/ W = 250 0. 16 0. 2 A 300 hS R t Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) (Stud Version), 280 A K/ W 0.6 K/ W 0.8 K /W 1.2 K /W 0 0 50 100 150 200 250 300 25 Average On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (°C) 500 W K/ K/ W 0. 16 K/ W 0. 2 K/ W 0.3 K/ W 0.4 K/ W -D ta el R Conduc tion Period 150 03 0. 250 200 RMS Limit K/ W = 300 0. 12 SA 350 0. 08 W K/ 400 h R t DC 180° 120° 90° 60° 30° 450 06 0. Maximum Average On-state Power Loss (W) Fig. 3 - On-State Power Loss Characteristics 0.6 K /W ST280S Series TJ = 125°C 100 50 1 K/ W 0 0 25 50 100 150 200 250 300 350 400 450 Average On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94402 Revision: 11-Aug-08 ST280SPbF Series 7000 Pea k Half Sine Wave On-sta te Current (A) Peak Half Sine Wave On-state Current (A) Phase Control Thyristors (Stud Version), 280 A At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 6500 6000 5500 5000 4500 4000 ST280SSeries 3500 3000 1 10 Vishay High Power Products 7000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 6500 6000 5500 5000 4500 4000 ST280S Series 3500 3000 100 1 Number Of Equa l Amplitude Ha lf Cyc le Current Pulses (N) 10 100 Number Of Equa l Amplitude Half Cyc le Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 10000 TJ= 25°C TJ = 125°C 1000 ST280SSeries 100 0.5 1 1.5 2 2.5 3 3.5 4 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJC (K/ W) Fig. 7 - On-State Voltage Drop Characteristics 1 Steady State Value RthJC = 0.105 K/ W (DC Operation) 0.1 0.01 ST280SSeries 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Document Number: 94402 Revision: 11-Aug-08 For technical questions, contact: [email protected] www.vishay.com 5 ST280SPbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 280 A Rec tangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 µs (b) VGD IGD 0.1 0.001 (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a) (1) Device: ST280S Series 0.01 tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms Tj=-40 °C 1 Tj=25 °C Tj=125 °C Instantaneous Gate Voltage (V) 100 (2) (3) (4) Frequenc y Limited by PG(AV) 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code ST 28 0 S 06 P 0 V PbF 1 2 3 4 5 6 7 8 9 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - S = Compression bonding stud 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - P = Stud base 3/4"-16UNF-2A threads 7 - 0 = Eyelet terminals (gate and auxiliary cathode leads) 1 = Fast-on terminals (gate and auxiliary cathode leads) 8 - V = Glass-metal seal 9 - Lead (Pb)-free Note: For metric device M16 x 1.5 contact factory LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 6 http://www.vishay.com/doc?95077 For technical questions, contact: [email protected] Document Number: 94402 Revision: 11-Aug-08 Outline Dimensions Vishay Semiconductors TO-209AB (TO-93) DIMENSIONS in millimeters (inches) Glass metal seal 19 (0.75) MAX. Ø 8.5 (0.33) Ø 4.3 (0.17) Red silicon rubber C.S. 0.51 mm2 (0.0008 s.i.) Red cathode 213.5 ± 10 (8.41 ± 0.39) White gate 238.5 ± 10 (9.39 ± 0.39) Red shrink 75 (2.95) MIN. White shrink Ø 28.5 (1.12) MAX. 28.5 (1.12) MAX. 16 (0.63) MAX. 21 (0.83) MAX. SW 32 3/4"-16UNF-2A 35 (1.38) MAX. 0° to 15° 4 MAX. 38 MAX. Fast-on terminals AMP. 280000-1 REF-250 23 MIN. Flexible lead C.S. 35 mm2 (0.054 s.i.) Document Number: 95077 Revision: 19-May-10 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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