ST 2SC3266 NPN Silicon Epitaxial Planar Transistor for power amplifier applications. and power switching The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta=25oC) Symbol Value Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 20 V Emitter to Base Voltage VEBO 6 V Base Current IB 0.5 A Collector Current IC 2 A Power Dissipation Ptot 750 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SC3266 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Y hFE 120 - 240 - G hFE 200 - 400 - L hFE 350 - 700 - hFE 75 - - - ICBO - - 0.1 μA IEBO - - 0.1 μA V(BR)CEO 20 - - V V(BR)EBO 6 - - V VCE(sat) - - 0.5 V VBE - - 0.85 V Cob - 30 - pF fT - 120 - MHz DC Current Gain at VCE=2V,IC=0.1A at VCE=2V, IC=2A Collector Cutoff Current at VCB=20V Emitter Cutoff Current at VEB=6V Collector Emitter Breakdown Voltage at IC=10mA Emitter Base Breakdown Voltage at IE=0.1mA Collector to Emitter Saturation Voltage at IC=2A,IB=0.1A Base Emitter Voltage at VCE=2V, IC=0.1A Collector Output Capacitance at VCB=10V,f=1.0MHz Transition Frequency at VCE=2V, IC=0.5A SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SC3266 I C - VCE 20 1600 h FE - I C 1000 COMMON EMITTER Ta=25 oC 15 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) 2000 10 8 1200 6 800 4 3 2 400 500 0 4 8 12 25 -25 100 50 30 COMMON EMITTER VCE=2V 10 I B =1mA 0 0 Ta=100 oC 300 1 16 20 3 24 10 30 100 300 1000 3000 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) I C - VBE VCE(sat) - I C 2000 COMMON EMITTER I C/I B =20 0.5 COLLECTOR CURRENT I C (mA) COLLECTOR -EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 Ta=100 o C 0.3 0.1 25 0.05 -25 0.03 0.01 COMMON EMITTER VCE=2V 1600 1200 Ta=100 oC 25 800 -25 400 0 0.005 0.003 0 1 3 10 30 100 300 1000 0.4 0.8 1.2 1.6 2.0 2.4 3000 BASE-EMITTER VOLTAGE V BE (V) COLLECTOR CURRENT I C (mA) SAFE OPERATING AREA 10 1000 10ms* Ic MAX. (PULSED)** 5 3 Ic MAX. (CONTINUOUS) 800 COLLECTOR CURRENT I C (A) COLLECTOR POWER DISSIPATION P C (mW) Pc - Ta 600 400 200 0 0 25 50 75 100 125 AMBIENT TEMPERATURE Ta ( oC) 150 1ms* 100ms* 1 0.5 0.3 DC OPERATION o Ta=25 C * SINGLE NONREPETITIVE PULSE Ta=25o C ** PULSE WIDTH:10ms (MAX.) DUTY CYCLE :30% 0.05 Ta=25o C 0.03 CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE VCEO MAX. 0.01 0.1 0.1 0.3 1 3 10 30 COLLECTOR-EMITTER VOLTAGE VCE (V) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002