MMBTSC3265 NPN Silicon Epitaxial Planar Transistor for low frequency power amplifier applications and power switching application. The transistor is subdivided into two groups, O and Y according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Value Unit Collector Base Voltage VCBO 35 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 800 mA Base Current IB 160 mA Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O Power Dissipation C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 MMBTSC3265 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain Group O hFE 100 - 200 - Y hFE 160 - 320 - hFE 40 - - - ICBO - - 100 nA IEBO - - 100 nA V(BR)CEO 30 - - V V(BR)EBO 5 - - V VCE(sat) - - 0.5 V fT - 120 - MHz VBE 0.5 - 0.8 V COB - 13 - pF DC Current Gain at VCE=1V, IC=100mA at VCE=1V, IC=800mA Collector Cutoff Current at VCB=30V Emitter Cutoff Current at VEB=5V Collector Emitter Breakdown Voltage at IC=10mA Emitter Base Breakdown Voltage at IE=1mA Collector Emitter Saturation Voltage at IC=500mA, IB=20mA Transition Frequency at VCE=5V, IC=10mA, f=100MHz Base Emitter Voltage at IC=10mA, VCE=1V Collector Output Capacitance at VCB=10V, f=1MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 MMBTSC3265 I C - VCE h FE - I C 1K COMMON EMITTER Ta=25 oC 5 6 800 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) 1K 4 3 600 2 400 I B =1mA 200 500 Ta=100 oC 300 Ta=25o C 100 Ta=-25 oC 50 30 COMMON EMITTER VCE=1V 0 0 10 0 2 4 6 8 3 1 10 10 30 100 300 1K COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) I C - VBE Ta=25o C 0.3 o 0.1 T 10 a= 0 C 0.05 o 0.03 Ta=-25 C 600 400 Ta=25 o C Ta=-25 o C 0.5 COMMON EMITTER VCE=1V 100 o C COMMON EMITTER I C/I B =25 800 Ta= COLLECTOR -EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 COLLECTOR CURRENT I C (mA) VCE(sat) - I C 200 0 0 0.2 0.4 0.6 0.8 0.01 1 3 10 30 100 300 1K BASE-EMITTER VOLTAGE V BE (V) COLLECTOR CURRENT I C (mA) COLLECTOR POWER DISSIPATION P C (mW) Pc - Ta 240 200 160 120 80 40 0 0 40 80 120 160 AMBIENT TEMPERATURE Ta (o C) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 1.0