STC05IE150HV Emitter Switched Bipolar Transistor ESBT® 1500 V - 5 A - 0.12 Ω Features PRELIMINARY DATA VCS(ON) IC RCS(ON) 0.6 V 5A 0.12 W ■ High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHZ ■ Squared rbsoa, up to 1500 V ■ Very low C ISS driven by RG = 47 Ω ■ Very low turn-off cross over time ■ In compliance with the 2002/93/EC European Directive Applications ■ Aux SMPS for three phase mains ■ Sepic PFC 1 23 4 TO247-4LHV Internal Schematic Diagram Description The STC05IE150HV is manufactured in Monolithic ESBT Technology, aimed to provide best performance in high frequency / high voltage applications. it is designed for use in Gate Driven based topologies. Order Codes Part Number Marking Package Packaging STC05IE150HV C05IE150HV TO247-4LHV TUBE November 2006 Rev 2 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/7 www.st.com 7 STC05IE150HV 1 Absolute Maximum Ratings 1 Absolute Maximum Ratings Table 1. Absolute Maximum Ratingsn Symbol Parameter Value Unit 1500 V VCS(SS) Collector-source voltage (VBS = VGS = 0 V) VBS(OS) Base-source voltage (IC = 0, VGS = 0 V) 30 V VSB(OS) source-base voltage (ic = 0, vgs = 0 v) 29 V ± 17 V Collector Current 5 A Collector peak current (tP < 5ms) 15 A Base current 4 A IBM Base peak current (tP < 1ms) 8 A Ptot Total dissipation at Tc = 25°C 178 W Tstg Storage temperature -40 to 150 °C 150 °C Value Unit 0.7 °C/W VGS IC ICM IB TJ 1.1 Table 2. Symbol Rthj-case 2/7 Gate-source Voltage Max. operating junction temperature Thermal Data Thermal Data Parameter Thermal resistance junction-case____________________Max STC05IE150HV 2 2 Electrical Characteristics Electrical Characteristics Table 3. Symbol Electrical Characteristics (TCASE = 25°C; unless otherwise specified) Parameter Test Conditions Min. Typ. Max. Unit ICS(SS) Collector-source current (V BS = VGS = 0) VCE = 1500V 100 µA IBS(OS) Base-source current (IC = 0, VGS = 0 V) VBS(OS) = 30 V 10 µA ISB(OS) Source-base current (IC = 0, VGS = 0) VSB(OS) = 20 V 100 µA IGS(OS) Gate-source leakage VGS = ± 17 V 100 nA 1.2 1.5 V V 1.3 1.0 1.5 1.2 V V 3 4 V VCS(ON) Collector-source ON voltage hFE DC current gain VBS(ON) Base-source ON voltage 0.6 0.8 VGS = 10 V_ IC = 5 A _ IB = 1.0 A VGS = 10 V_ IC = 2 A _ IB = 0.2 A VGS = 10 V_ VCS = 1 V_ IC = 5 A VGS = 10 V _VCS = 1 V _IC = 2 A 4 8 VGS = 10 V_IC = 5 A_ IB = 1 A VGS = 10 V_IC = 2 A_ IB = 0.2 A VGS(th) CISS Gate threshold voltage VBS = V GS ______IB = 250 µA Input capacitance TBD TBD pF TBD TBD nC TBD TBD ns ns Q GS(tot) Gate-source charge ts tf 6 11 INDUCTIVE LOAD Storage time Fall time 2 TBD 3/7 3 Package mechanical data 3 STC05IE150HV Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 4/7 STC05IE150HV 3 Package mechanical data TO247-4LHV MECHANICAL DATA DIM. mm. MIN. A 4.85 A1 2.20 A2 b 0.95 2.50 c 0.40 D 23.85 D1 5.15 2.50 2.60 1.10 1.30 2.90 0.80 24 24.15 21.50 E 15.45 e 2.54 e1 5.08 L 10.20 L1 2.20 L2 15.60 15.75 10.80 2.50 2.80 18.50 L3 S MAX. 1.27 b2 P TYP 3 3.55 3.65 5.50 7734874 5/7 STC05IE150HV 4 Revision History 4 6/7 Revision History Date Revision Changes 30-Jan-2006 1 Initial release. 30-Nov-2006 2 The document has been reformatted STC05IE150HV 4 Revision History Please Read Carefully: Information in this document is provided solely in connection with ST products. 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