STD10NF10 STD10NF10-1 N-channel 100V - 0.115Ω - 13A - DPAK - IPAK Low gate charge STripFET™ II Power MOSFET General features Type VDSSS RDS(on) ID STD10NF10 100V <0.13Ω 13A STD10NF10-1 100V <0.13Ω 13A ■ Exceptional dv/dt capability ■ Application oriented characterization 3 3 2 1 DPAK 1 IPAK Description This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STD10NF10T4 D10NF10 DPAK Tape & reel STD10NF10-1 D10NF10 IPAK Tube August 2006 Rev 3 1/14 www.st.com 14 Contents STD10NF10 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 ................................................ 8 STD10NF10 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VDGR VGS Parameter Value Unit Drain-source voltage (VGS = 0) 100 V Drain-gate voltage (RGS = 20KΩ) 100 V Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 13 A ID Drain current (continuous) at TC=100°C 9 A Drain current (pulsed) 52 A Total dissipation at TC = 25°C 50 W 0.33 W/°C 70 mJ 9 V/ns -55 to 175 °C Value Unit IDM (1) PTOT Derating factor EAS (2) Single pulse avalanche energy dv/dt (3) Peak diode recovery voltage slope Tstg TJ Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area 2. Starting TJ = 25 oC, ID = 15A, VDD = 50V 3. ISD ≤13A, di/dt ≤300 A/µs, VDS ≤V(BR)DSS, TJ ≤TJMAX Table 2. Symbol Thermal data Parameter RthJC Thermal resistance junction-case Max 3.0 °C/W RthJA Thermal resistance junction-ambient Max 100 °C/W Tl Maximum lead temperature for soldering purpose 300 °C 3/14 Electrical characteristics 2 STD10NF10 Electrical characteristics (TCASE = 25°C unless otherwise specified) Table 3. Symbol V(BR)DSS On /off states Parameter Drain-source breakdown voltage Test conditions ID = 250µA, VGS = 0 IDSS IGSS Gate body leakage current (VDS = 0) VGS = ±20V VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 5A Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Typ. Max. 100 1 10 µA µA ±100 nA 3 4 V 0.115 0.13 Ω Typ. Max. Unit VDS = Max rating, TC = 125°C 2 Unit V VDS = Max rating Zero gate voltage drain current (VGS = 0) Table 4. Min. Dynamic Parameter Test conditions Min. Forward transconductance VDS = 15V, ID = 5A 20 S Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1 MHz, VGS = 0 460 70 30 pF pF pF Total gate charge Gate-source charge Gate-drain charge VDD = 80V, ID = 10A VGS = 10V 15.3 3.7 4.7 21 nC nC nC Typ. Max. Unit 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 5. Symbol td(on) tr td(off) tf 4/14 Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 27V, ID = 5A, RG = 4.7Ω, VGS = 10V Figure 13 on page 8 Min. 16 25 32 8 ns ns ns ns STD10NF10 Electrical characteristics Table 6. Symbol Source drain diode Max Unit Source-drain current 13 A ISDM (1) Source-drain current (pulsed) 52 A VSD(2) Forward on voltage 1.5 V ISD trr Qrr IRRM Parameter Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions Min Typ. ISD = 10A, VGS = 0 ISD = 10A, di/dt = 100A/µs, VDD = 50V, TJ = 150°C Figure 15 on page 8 90 230 5 ns µC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/14 Electrical characteristics STD10NF10 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/14 STD10NF10 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized breakdown voltage vs temperature 7/14 Test circuit 3 STD10NF10 Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/14 STD10NF10 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/14 Package mechanical data STD10NF10 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. A inch TYP. 2.2 MAX. MIN. 2.4 0.086 TYP. MAX. 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 C 0.45 C2 0.48 D 6 E 6.4 6.6 0.037 0.6 0.017 0.023 0.6 0.019 0.023 6.2 0.236 0.244 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 10/14 STD10NF10 Package mechanical data DPAK MECHANICAL DATA mm. inch DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 TYP 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 MAX. MIN. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 6.6 0.252 5.1 6.4 0.260 0.173 0.368 0.039 2.8 0.8 0.181 0.397 0.110 0.031 1 0.023 0.2 0° 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.185 0.090 4.6 10.1 0.6 MAX. 0.200 4.7 2.28 4.4 9.35 1 TYP. 0.039 0.008 8° 0° 8° 0068772-F 11/14 Packaging mechanical data 5 STD10NF10 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12/14 inch MIN. MAX. 12.1 0.476 1.6 0.059 0.063 D 1.5 D1 1.5 E 1.65 1.85 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 0.059 0.065 0.073 1.574 16.3 0.618 0.641 MAX. MIN. 330 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA inch MAX. 12.992 0.059 13.2 0.504 0.520 18.4 0.645 0.724 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD10NF10 6 Revision history Revision history Table 7. Revision history Date Revision Changes 09-Sep-2004 3 Complete version 07-Aug-2006 3 New template, updated SOA 13/14 STD10NF10 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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