STD20NF06 N-CHANNEL 60V - 0.032 Ω - 24A DPAK STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID STD20NF06 60 V < 0.040 Ω 24 A ■ ■ ■ ■ TYPICAL RDS(on) = 0.032 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 3 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. DPAK TO-252 (Suffix “T4”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH SWITCHING APPLICATIONS Ordering Information SALES TYPE STD20NF06 MARKING D20NF06 PACKAGE TO-252 PACKAGING TAPE & REEL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(•) Ptot dv/dt (1) EAS(2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature (•) Pulse width limited by safe operating area. June 2004 Value 60 60 ± 20 24 17 96 60 0.4 10 300 Unit V V V A A A W W/°C V/ns mJ -55 to 175 °C (1) ISD ≤24A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID =10 A, VDD = 45V Rev.3.0.6 1/10 STD20NF06 TAB.1 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose (1.6 mm from case, for 10 sec) °C/W °C/W °C 2.5 100 275 Max Max ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) TAB.2 OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V V(BR)DSS Min. Typ. Max. 60 Unit V 1 10 µA µA ±100 nA Max. Unit 4 V 0.032 0.040 Ω Typ. Max. Unit TAB.3 ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 250 µA Min. Typ. 2 ID = 12 A TAB.4 DYNAMIC Symbol 2/10 Parameter Test Conditions gfs (*) Forward Transconductance VDS = 25 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V f = 1 MHz VGS = 0 ID = 12 A Min. 15 S 690 170 68 pF pF pF STD20NF06 ELECTRICAL CHARACTERISTICS (continued) TAB.5 SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time ID = 10 A VDD = 30 V VGS = 10 V RG = 4.7 Ω (Resistive Load, Figure 3) 10 30 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 30 V ID= 20 A VGS= 10 V 23 5 7.5 31 nC nC nC Typ. Max. Unit ns ns TAB.6 SWITCHING OFF Symbol td(off) tf Parameter Test Conditions Min. VDD = 30 V ID = 10 A VGS = 10 V RG = 4.7Ω, (Resistive Load, Figure 3) Turn-off Delay Time Fall Time 30 8 ns ns TAB.7 SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 24 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 20 A di/dt = 100A/µs Tj = 150°C VDD = 30 V (see test circuit, Figure 5) trr Qrr IRRM (*)Pulsed: Pulse duration = 300 µs, duty cycle (•)Pulse width limited by safe operating area. Safe Operating Area Test Conditions Min. Typ. VGS = 0 65 150 4.6 Max. Unit 24 96 A A 1.5 V ns nC A 1.5 %. Thermal Impedance 3/10 STD20NF06 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/10 STD20NF06 Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage Temperature. . . 5/10 STD20NF06 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 STD20NF06 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 L4 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL "A" L2 D = 1 = G 2 = = = E = B2 3 B DETAIL "A" L4 0068772-B 7/10 STD20NF06 *on sales type 8/10 STD20NF06 Revision History Date Revision Friday 11 June 2004 3.0.6 Description of Changes Missing in the web 9/10 STD20NF06 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. 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