STD2NK70Z STD2NK70Z-1 N-channel 700V - 6Ω - 1.6 A - DPAK/IPAK Zener protected SuperMESH™ Power MOSFET General features Type VDSS RDS(on) ID Pw STD2NK70Z 700V 7Ω 1.6A 45W STD2NK70Z-1 700V 7Ω 1.6A 45W ■ Extremely high dv/dt capability ■ ESD improved capability ■ 100% avalanche tested ■ New high voltage benchmark ■ Gate charge minimized 3 3 2 1 DPAK 1 IPAK Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STD2NK70Z D2NK70Z D²PAK Tape & reel STD2NK70Z-1 D2NK70Z IPAK Tube July 2006 Rev 3 1/16 www.st.com 16 Contents STD2NK70Z - STD2NK70Z-1 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 7 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 STD2NK70Z - STD2NK70Z-1 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit Drain-source voltage (VGS = 0) 700 V Drain-gate voltage (RGS = 20 kΩ) 700 V Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 1.6 A ID Drain current (continuous) at TC = 100°C 1 A Drain current (pulsed) 6.4 A Total dissipation at TC = 25°C 45 W Derating factor 0.36 W/°C Gate source ESD (HBM-C = 100pF, R = 1.5 KΩ) 2000 V 4.5 V/ns 55 to 150 °C VDS VDGR VGS IDM (1) Ptot VESD(G-S) dv/dt (2) Tstg Tj Peak diode recovery voltage slope Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area. 2. ISD ≤1.6A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX Table 2. Thermal data Rthj-case Thermal resistance junction-case max 2.78 °C/W Rthj-amb Thermal resistance junction-ambient max 100 °C/W Maximum lead temperature for soldering purpose 300 °C TJ Table 3. Symbol Avalanche characteristics Parameter Value Unit IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 1.6 A EAS Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) 110 mJ 3/16 Electrical ratings Table 4. Symbol BVGSO 1.1 STD2NK70Z - STD2NK70Z-1 Gate-source zener diode Parameter Gate-source breakdown voltage Test Condition Min. Igs= ± 1mA (open drain) 30 Typ. Max Unit A Protection features of gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 4/16 STD2NK70Z - STD2NK70Z-1 2 Electrical characteristics Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 1mA, VGS= 0 Min. Typ. Max. Unit 700 V VDS = Max rating, VDS = Max rating @125°C 1 50 µA µA Gate body leakage current (VDS = 0) VGS = ±20V ±10 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 50µA 3.75 4.5 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 0.8A 6 7 Ω Typ. Max. Unit IDSS Zero gate voltage drain current (VGS = 0) IGSS Table 6. Symbol gfs (1) Ciss Coss Crss Dynamic Parameter tr td(off) tf Qg Qgs Qgd Test conditions Min. Forward transconductance VDS =15V, ID = 0.8A 1.4 S Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 280 35 6.5 pF pF pF VGS=0, VDS =0V to 560V 17 pF 7 17 20 35 ns ns ns ns 11.4 2 6.8 nC nC nC Coss eq(2). Equivalent output capacitance td(on) 3 Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge VDD=350 V, ID= 0.8A, RG=4.7Ω, VGS=10V (see Figure 14) VDD=560V, ID = 0.8A VGS =10V (see Figure 15) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS inceases from 0 to 80% VDSS 5/16 Electrical characteristics Table 7. Symbol STD2NK70Z - STD2NK70Z-1 Source drain diode Max Unit Source-drain current 1.6 A ISDM(1) Source-drain current (pulsed) 6.4 A VSD(2) Forward on voltage 1.6 V ISD trr Qrr IRRM trr Qrr IRRM Parameter Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 6/16 Test conditions Min Typ. ISD=1.6A, VGS=0 ISD=1.6A, di/dt = 100A/µs, VDD=50V, Tj=25°C (see Figure 16) ISD=1.6A, di/dt = 100A/µs, VDD= 50V, Tj=150°C (see Figure 16) 334 918 5.5 ns µC A 350 1050 6 ns µC A STD2NK70Z - STD2NK70Z-1 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 7/16 Electrical characteristics STD2NK70Z - STD2NK70Z-1 Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics 8/16 Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized BVDSS vs temperature STD2NK70Z - STD2NK70Z-1 Electrical characteristics Figure 13. Maximum avalanche energy vs temperature 9/16 Test circuit 3 STD2NK70Z - STD2NK70Z-1 Test circuit Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform 10/16 Figure 19. Switching time waveform STD2NK70Z - STD2NK70Z-1 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/16 Package mechanical data STD2NK70Z - STD2NK70Z-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 C 0.45 C2 0.48 D 6 E 6.4 6.6 0.037 0.6 0.017 0.023 0.6 0.019 0.023 6.2 0.236 0.244 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 12/16 STD2NK70Z - STD2NK70Z-1 Package mechanical data DPAK MECHANICAL DATA mm. inch DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 TYP 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 MAX. MIN. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 6.6 0.252 5.1 6.4 0.260 0.090 4.6 10.1 0.173 0.368 0.039 2.8 0.8 0.181 0.397 0.110 0.031 1 0.023 0.2 0° 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.185 2.28 0.6 MAX. 0.200 4.7 4.4 9.35 1 TYP. 0.039 0.008 8° 0° 8° 0068772-F 13/16 Packaging mechanical data 5 STD2NK70Z - STD2NK70Z-1 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 14/16 inch 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD2NK70Z - STD2NK70Z-1 6 Revision history Revision history Table 8. Revision history Date Revision Changes 21-Jan-2005 1 First Release 10-Jun-2005 2 Updated Figure 1: Safe operating area 13-Jul-2006 3 New template, no content change 15/16 STD2NK70Z - STD2NK70Z-1 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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