STD2HNK60Z - STD2HNK60Z-1 STF2HNK60Z - STQ2HNK60ZR-AP N-channel 600V - 4.4Ω - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH™ Power MOSFET General features Type VDSS RDS(on) ID PTOT STD2HNK60Z 600V <4.8Ω 2A 45W STD2HNK60Z-1 600V <4.8Ω 2A 45W STF2HNK60Z 600V <4.8Ω 2A 20W STQ2HNK60ZR-AP 600V <4.8Ω 0.5A 3W ■ Gate charge minimized ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ ESD improved capability ■ New high voltage benchmark 3 3 2 1 IPAK 1 DPAK 3 1 TO-92 (Ammopack) 2 TO-220 Internal schematic diagram Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products. Applications ■ Switching application Order codes Sales Type Marking Package Packaging STD2HNK60Z D2HNK60Z DPAK Tape & reel STD2HNK60Z-1 D2HNK60Z IPAK Tube STF2HNK60Z F2HNK60Z TO-220FP Tube STQ2HNK60ZR-AP Q2HNK60ZR TO-92 Ammopak March 2006 Rev 4 1/16 www.st.com 16 Contents: STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP Contents: 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/16 ................................................ 9 STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit IPAK/DPAK TO-220FP TO-92 VDS VDGR VGS Drain-Source Voltage (VGS = 0) 600 V Drain-gate Voltage (R GS = 20kΩ) 600 V Gate-Source Voltage ±30 V ID Drain Current (continuous) at TC = 25°C 2.0 2.0 0.5 A ID Drain Current (continuous) at TC=100°C 1.26 1.26 0.32 A Drain Current (pulsed) 8 8 2 A Total Dissipation at T C = 25°C 45 20 3 W 0.36 0.16 0.025 W/°C IDM (1) PTOT Derating Factor VESD(G-S) Gate Source ESD (HBM-C=100pF, R=1.5kΩ) VISO dv/dt(2) TJ Tstg Tl Insulation withstand voltage (DC) 2000 -- 2500 Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature Maximum lead temperature for soldering purpose V -- V 4.5 V/ns -55 to 150 °C 300 260 °C 1. Pulse width limited by safe operating area 2. ISD ≤2A, di/dt ≤200A/µs, VDD =80%V(BR)DSS Table 2. Thermal data IPAK/DPAK TO-220FP TO-92 Rthj-case Thermal resistance junction-case Max 2.77 6.25 -- °C/W Rthj-amb Thermal resistance junction-ambient Max 100 62.5 120 °C/W Rthj-lead Thermal resistance junction-lead Max -- -- 40 °C/W Table 3. Avalanche data Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 2 A EAS Single pulse avalanche energy (starting Tj=25°C, ID=IAR, VDD=50V) 120 mJ 3/16 Electrical characteristics 2 STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol On/off states Parameter Test Condictions V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current (VGS = 0) IGSS Gate Body Leakage Current VGS = ±20V (V DS = 0) ID = 1mA, V GS= 0 Typ. VDS= VGS, ID = 50µA RDS(on) Static Drain-Source On Resistance VGS= 10V, ID= 1.0A Unit V 1 50 µA µA ±10 nA 3.75 4.5 V 4.4 4.8 Ω Typ. Max. Unit VDS = Max Rating,Tc=125°C Gate Threshold Voltage Max. 600 VDS = Max Rating, VGS(th) Table 5. Min. 3 Dynamic Symbol Parameter gfs (1) Forward Transconductance VDS =15V, ID = 1.0A 1.5 S Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS =25V, f=1 MHz, VGS=0 280 38 7 pF pF pF Equivalent Output Capacitance VGS=0, V DS =0V to 480V 30 pF Total Gate Charge Gate-Source Charge Gate-Drain Charge VGS =10V Ciss Coss Crss Coss eq(2) Qg Qgs Qgd Test Condictions VDD=480V, ID = 2.0A (see Figure 18) Min. 11 2.25 6 15 nC nC nC 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/16 STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP Table 6. Switching times Symbol Parameter td(on) tr td(off) tf Table 7. Symbol Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Condictions Electrical characteristics Min. VDD =300V, ID=1.0A, RG=4.7Ω, VGS=10V (see Figure 17) VDD =300V, ID=1.0A, RG=4.7Ω, VGS=10V (see Figure 17) Typ. Max. Unit 10 30 ns ns 23 50 ns ns Source drain diode Parameter Test Condictions Min. Typ. Max. Unit 2.0 8.0 A A 1.3 V ISDM(1) Source-drain Current Source-drain Current (pulsed) VSD(2) Forward on Voltage ISD=2.0A, V GS=0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=2.0A, di/dt = 100A/µs, VDD=20 V, Tj=25°C 178 445 5 ns nC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=2.0A, di/dt = 100A/µs, VDD=20 V, Tj=150°C 200 500 5 ns nC A ISD trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/16 Electrical characteristics STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-92 Figure 2. Thermal impedance for TO-92 Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Safe operating area for IPAK/DPAK Figure 6. Thermal impedance for IPAK/DPAK 6/16 STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP Electrical characteristics Figure 7. Output characterisics Figure 8. Transfer characteristics Figure 9. Normalized BVDSS vs temperature Figure 10. Static drain-source on resistance Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations 7/16 Electrical characteristics STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP Figure 13. Normalized gate threshold voltage vs temperature Figure 14. Normalized on resistance vs temperature Figure 15. Source-drain diode forward characteristics Figure 16. Maximum avalanche energy vs temperature 8/16 STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP 3 Test circuit Test circuit Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform 9/16 Package mechanical data 4 STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16 STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP Package mechanical data TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 11/16 Package mechanical data STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 C 0.45 C2 0.48 D 6 E 6.4 6.6 0.037 0.6 0.017 0.023 0.6 0.019 0.023 6.2 0.236 0.244 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 12/16 STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP Package mechanical data TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. A 2.20 2.40 0.087 TYP. 0.094 MAX. A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 0.181 G 4.40 4.60 0.173 H 9.35 10.10 0.368 L2 0.8 0.398 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 13/16 Package mechanical data STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP TO-92 AMMOPACK DIM. mm. MIN. TYP MIN. TYP. MAX. A1 4.45 4.95 0.170 0.194 T 3.30 3.94 0.130 0.155 T1 1.6 T2 2.3 d 0.41 0.06 0.09 0.56 0.016 0.022 P0 12.5 12.7 12.9 0.49 0.5 0.51 P2 5.65 6.35 7.05 0.22 0.25 0.27 2.54 2.94 0.09 0.1 0.11 2 -0.08 19 0.69 0.71 0.74 F1, F2 2.44 delta H -2 W 17.5 18 W0 5.7 6 6.3 0.22 0.23 0.24 W1 8.5 9 9.25 0.33 0.35 0.36 W2 H 18.5 H0 15.5 D0 0.08 0.5 16 H1 14/16 inch MAX. 0.02 20.5 0.72 0.80 16.5 0.61 0.63 0.65 0.15 0.157 0.16 25 3.8 4 4.2 t 0.9 L 11 l1 3 delta P -1 0.98 0.035 0.43 0.11 1 -0.04 0.04 STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP 5 Revision history Revision history Table 8. Revision history Date Revision Changes 09-Mar-2004 1 First release 23-Mar-2004 2 Modified title 02-Apr-2005 3 Complete version 06-Mar-2006 4 Inserted DPAK. New template 15/16 STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP Please Read Carefully: Information in this document is provided solely in connection with ST products. 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