STD30NF06L N-CHANNEL 60V - 0.022Ω - 35A DPAK/IPAK STripFET POWER MOSFET TYPE STD30NF06L ■ ■ ■ ■ ■ ■ VDSS RDS(on) ID 60 V <0.028Ω 35 A TYPICAL RDS(on) = 0.022Ω EXCEPTIONAL dv/dt CAPABILITY LOGIC LEVEL GATE DRIVE ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL ADD SUFFIX “-1” FOR ORDERING IN IPAK CHARACTERIZATION ORIENTED FOR AUTOMOTIVE APPLICATIONS DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 3 3 2 1 1 IPAK DPAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH-EFFICIENCY DC-DC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC & DC-AC CONVERTERS ■ AUTOMOTIVE ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 60 V Drain-gate Voltage (RGS = 20 kΩ) 60 V ± 20 V 35 A Gate- source Voltage ID Drain Current (continuous) at TC = 25°C ID Drain Current (continuous) at TC = 100°C 25 A IDM (l ) Drain Current (pulsed) 140 A PTOT Total Dissipation at TC = 25°C 70 W 0.46 W/°C 25 V/ns – 55 to 175 °C Derating Factor dv/dt (1) Tstg Tj Peak Diode Recovery voltage slope Storage Temperature Operating Junction Temperature ( ●) Pulse width limi ted by safe operating area July 2002 (1) ISD ≤38A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. 1/10 STD30NF06L THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.14 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W Maximum Lead Temperature For Soldering Purpose 275 °C Tl AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 35 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 150 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ± 20 V ±100 nA 60 V ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit 1 1.7 2.5 V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA R DS(on) Static Drain-source On Resistance VGS = 5 V, I D = 18 A 0.025 0.03 Ω VGS = 10 V, I D = 18 A 0.022 0.028 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/10 Parameter Test Conditions Forward Transconductance VDS > =15 V , I D =15 A C iss Input Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 Coss Output Capacitance Crss Reverse Transfer Capacitance Min. 25 S 1600 pF 215 pF 60 pF STD30NF06L ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Q gd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Min. VDD = 30 V, I D = 18 A RG = 4.7Ω VGS = 4.5 V (see test circuit, Figure 3) VDD = 48 V, I D = 38 A, VGS = 5 V Typ. Max. Unit 30 ns 105 ns 23 7 10 31 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Condit ions Min. 65 25 VDD = 30 V, ID = 18 A, R G = 4.7Ω, VGS = 4.5 V (see test circuit, Figure 3) ns ns SOURCE DRAIN DIODE Symbol Max. Unit Source-drain Current 35 A ISDM (2) Source-drain Current (pulsed) 140 A VSD (1) Forward On Voltage ISD trr Qrr IRRM Parameter Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions Min. Typ. ISD = 35 A, V GS = 0 ISD = 38 A, di/dt = 100 A/µs, VDD = 15 V, T j = 150°C (see test circuit, Figure 5) 1.5 70 140 4 V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Normalized Thermal Impedence 3/10 STD30NF06L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/10 STD30NF06L Normalized Gate Threshold Voltage vs Temperature Normalized Drain-Source Breakdown vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/10 STD30NF06L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 STD30NF06L TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.094 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 7/10 STD30NF06L TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 L4 V2 0.8 0.60 0 o 0.031 1.00 8 o 0.024 0 o 0.039 0o P032P_B 8/10 STD30NF06L DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. MAX. A 330 DIM. 9/10 mm MIN. MAX. inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 1.5 12.1 1.6 0.476 0.059 0.063 D1 E 1.5 1.65 1.85 0.059 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 P1 3.9 7.9 4.1 8.1 0.153 0.161 0.311 0.319 P2 R 1.9 40 2.1 0.075 0.082 1.574 W 15.7 16.3 0.618 0.641 12.992 B 1.5 C D 12.8 20.2 13.2 0.504 0.520 0.795 G N 16.4 50 18.4 0.645 0.724 1.968 22.4 0.881 T TAPE MECHANICAL DATA inch MIN. MAX. 0.059 BASE QTY BULK QTY 2500 2500 STD30NF06L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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