STMICROELECTRONICS STGB7NB60HDT4

STGB7NB60HD
®
N-CHANNEL 7A - 600V DPAK
PowerMESH IGBT
TYPE
V CES
V CE(sat)
IC
STGB7NB60HD
600 V
< 2.8 V
7A
■
■
■
■
■
■
■
■
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
LOW ON-VOLTAGE DROP (Vcesat)
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
VERY HIGH FREQUENCY OPERATION
OFF LOSSES INCLUDE TAIL CURRENT
CO-PACKAGED WITH TURBOSWITCH
ANTIPARALLEL DIODE
SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
3
1
D2PAK
TO-263
(Suffix "T4")
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
IGBTs,
with
outstanding
perfomances. The suffix "H" identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
HIGH FREQUENCY MOTOR CONTROLS
■ SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
■
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V CES
Collector-Emitter Voltage (V GS = 0)
V GE
Gate-Emitter Voltage
o
IC
Collector Current (continuous) at T c = 25 C
IC
Collector Current (continuous) at T c = 100 o C
ICM (•)
P tot
Collector Current (pulsed)
o
Total Dissipation at T c = 25 C
Derating Factor
T stg
Tj
Storage Temperature
Max. Operating Junction Temperature
Value
Unit
600
V
± 20
V
14
A
7
A
56
A
80
W
0.64
W/ o C
-65 to 150
o
C
150
o
C
(•) Pulse width limited by safe operating area
June 1999
1/8
STGB7NB60HD
THERMAL DATA
R thj-case
R thj-amb
R thc-sink
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
o
1.56
62.5
0.5
Max
Max
Typ
C/W
C/W
o
C/W
o
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Collector-Emitter
Breakdown Voltage
I C = 250 µA
I CES
Collector cut-off
(V GE = 0)
V CE = Max Rating
V CE = Max Rating
IGES
Gate-Emitter Leakage
Current (V CE = 0)
V GE = ± 20 V
V BR(CES)
V GE = 0
Min.
Typ.
Max.
600
Unit
V
250
2000
µA
µA
± 100
nA
Max.
Unit
5
V
2.3
1.9
2.8
V
V
Min.
Typ.
Max.
Unit
3.5
5
390
45
10
560
68
15
730
90
20
pF
pF
pF
42
7.9
17.6
55
nC
nC
nC
T j = 25 o C
T j = 125 o C
V CE = 0
ON (∗)
Symbol
V GE(th)
V CE(SAT)
Parameter
Test Conditions
Gate Threshold
Voltage
V CE = V GE
I C = 250 µA
Collector-Emitter
Saturation Voltage
V GE = 15 V
V GE = 15 V
IC = 7 A
IC = 7 A
Min.
Typ.
3
T j = 125 o C
DYNAMIC
Symbol
Parameter
Test Conditions
Forward
Transconductance
V CE =25 V
IC = 7 A
C ies
C oes
C res
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V CE = 25 V
f = 1 MHz
QG
Q GE
Q GC
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V CE = 480 V
Latching Current
V clamp = 480 V
T j = 150 o C
gf s
I CL
IC = 7 A
V GE = 0
V GE = 15 V
R G =10Ω
S
28
A
SWITCHING ON
Symbol
t d(on)
tr
(di/dt) on
Eon (❍ )
2/8
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Delay Time
Rise Time
V CC = 480 V
V GE = 15 V
IC = 7 A
R G = 10Ω
15
48
ns
ns
Turn-on Current Slope
V CC = 480 V
R G = 10 Ω
T j = 125 o C
IC = 7 A
V GE = 15 V
160
A/µs
185
µJ
Turn-on Switching
Losses
STGB7NB60HD
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tc
t r (v off )
t d (off)
tf
E off (**)
E ts( ❍ )
VCC = 480 V
Cross-Over Time
Off Voltage Rise Time R GE = 10 Ω
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
IC = 7 A
V GE = 15 V
85
20
75
70
85
235
ns
ns
ns
ns
µJ
µJ
tc
t r (v off )
t d (off)
tf
E off (**)
E ts( ❍ )
VCC = 480 V
Cross-Over Time
Off Voltage Rise Time R GE = 10 Ω
Delay Time
T j = 125 o C
Fall Time
Turn-off Switching Loss
Total Switching Loss
IC = 7 A
V GE = 15 V
150
50
110
110
220
405
ns
ns
ns
ns
µJ
µJ
COLLECTOR-EMITTER DIODE
Symbol
If
Parameter
I fm
Forward Current
Forward Current pulsed
Vf
Forward On-Voltage
t rr
Q rr
I rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Test Conditions
If = 7 A
If = 7 A
If = 7 A
dI/dt = 100 A/µS
T j = 125 o C
V R =200 V
T j = 125 o C
Min.
Typ.
1.6
1.4
100
180
3.6
Max.
Unit
7
56
A
A
2.0
V
V
ns
nC
A
(•) Pulse width limited by max. junction temperature
(❍) Include recovery losses on the STTA506 freewheeling diode
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedance
3/8
STGB7NB60HD
Output Characteristics
Transfer Characteristics
Transconductance
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Current
Gate Threshold vs Temperature
4/8
STGB7NB60HD
Normalized Breakdown Voltage vs Temperature
Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Temperature
Total Switching Losses vs Collector Current
5/8
STGB7NB60HD
Switching Off Safe Operating Area
Diode Forward Voltage
Fig. 1: Gate Charge test Circuit
Fig. 2: Test Circuit For Inductive Load Switching
Fig. 3: Switching Waveforms
6/8
STGB7NB60HD
TO-263 (D2PAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.21
1.36
0.047
0.053
D
8.95
9.35
0.352
0.368
E
10
10.4
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
D
A2
A
C
C2
DET AIL "A"
DET AIL "A"
A1
B2
E
B
G
L2
L
L3
P011P6/E
7/8
STGB7NB60HD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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8/8
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