STMICROELECTRONICS STGB10N60L

STGB10N60L

N-CHANNEL 10A - 600V D2PAK
LOGIC LEVEL IGBT
TYPE
STGB10N60L
■
■
■
■
■
■
V CES
V CE(sat )
IC
600 V
< 1.95 V
10 A
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
VERY LOW ON-VOLTAGE DROP (Vcesat)
LOW THRESHOLD VOLTAGE
(LOGIC LEVEL INPUT)
HIGH CURRENT CAPABILITY
OFF LOSSES INCLUDE TAIL CURRENT
SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
3
1
D2PAK
TO-263
APPLICATIONS
■ ELECTRONIC IGNITION
■ LIGHT DIMMER
■ STATIC RELAYS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Value
Un it
V CES
Collector-Emitter Voltage (VGS = 0)
Parameter
600
V
V ECR
Reverse Battery Protection
25
V
V GE
G ate-Emitter Voltage
± 15
V
o
IC
Collector Current (continuous) at Tc = 25 C
25
A
IC
Collector Current (continuous) at Tc = 100 C
o
20
A
Collector Current (pulsed)
100
A
T otal Dissipation at Tc = 25 C
125
W
Derating Factor
0.83
W /o C
I CM (•)
P tot
T s tg
Tj
o
Storage T emperature
Max. Operating Junction Temperature
-65 to 175
o
C
175
o
C
(•) Pulse width limited by safe operating area
June 1999
1/8
STGB10N60L
THERMAL DATA
R thj -case
R thj -amb
R thc-sink
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Max
Max
T yp
o
1.2
62.5
0.1
C/W
C/W
o
C/W
o
ELECTRICAL CHARACTERISTICS (Tj = - 40 to 150 oC unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Collector-Emitt er
Breakdown Voltage
I C = 250 µA
I CES
Collector cut-off
(V GE = 0)
V CE = Max Rating
V CE = Max Rating
IGES
Gate-Emitter Leakage
Current (VCE = 0)
V GE = ± 15 V
V BR(c es)
Min.
V GE = 0
Typ.
Max.
600
Unit
V
T j = 25 oC
o
T j = 125 C
V CE = 0
25
100
µA
µA
± 100
nA
Max.
Unit
2.4
2.0
V
V
2.0
V
V
V
ON (∗)
Symbo l
V GE(th)
V CE(SAT )
IC
Parameter
Test Con ditions
Min.
IC = 250 µA
I C = 250 µA T j = 25 oC
Gate Threshold
Voltage
V CE = V GE
V CE = V GE
Collector-Emitt er
Saturation Voltage
V GE = 4.5 V
V GE = 4.5 V
V GE = 4.5 V
Collector Current
V GE = 4.5 V
IC = 8 A
T j = - 40 oC
IC = 9.5 A Tj = 25 o C
IC = 8 A
T j = 150 o C
V CE = 7 V
Typ.
0.6
1.0
1.5
1.4
1.25
15
45
Min.
Typ.
7
12
A
DYNAMIC
Symbo l
gf s
C i es
C o es
C res
QG
Parameter
Test Con ditions
Forward
Transconductance
V CE =25 V
IC = 8 A
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V CE = 25 V
f = 1 MHz
Gate Charge
V CE = 400 V
IC = 8 A
Tj =
o
25 C
V GE = 0
1800
120
19
V GE = 5 V
Max.
Unit
S
2600
165
26
30
pF
pF
pF
nC
FUNCTIONAL CHARACTERISTICS
Symbo l
2/8
Parameter
Test Con ditions
I CL
Latching Current
V clamp = 480 V
T j = 125 o C
E CF
Forward Clamping
Energy
T start = 55 o C
V cl amp = 480 V
I C = 10 A L = 4.2 mH - Single Pulse
E AR
Reverse Avalanche
Energy
dV/dt = 200 V/µs
Min.
Typ.
Max.
Unit
20
A
210
mJ
10
mJ
STGB10N60L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
t d(on)
tr
(di/dt) on
Eo n
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
Delay Time
Rise Time
V CC = 480 V
V GE = 5 V
IC = 8 A
R G = 1 KΩ
0.7
1.9
µs
µs
Turn-on Current Slope
V CC = 480 V
R G = 1 KΩ
T j = 125 o C
IC = 8 A
V GE = 5 V
5
A/µs
2.5
mJ
Turn-on
Switching Losses
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
tc
t r (v off )
tf
E o ff(**)
Cross-O ver Time
V CC = 480 V
Off Voltage Rise Time R GE = 1 KΩ
Fall T ime
T j = 25 o C
Turn-off Switching Loss
IC = 8 A
V GE = 5 V
4
2.5
1.5
9.0
µs
µs
µs
mJ
tc
t r (v off )
tf
E o ff(**)
Cross-O ver Time
V CC = 480 V
Off Voltage Rise Time R GE = 1 KΩ
Fall T ime
T j = 125 o C
Turn-off Switching Loss
IC = 8 A
V GE = 5 V
6
3.3
2.5
10.8
µs
µs
µs
mJ
(•) Pulse width limited by safe operating area
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
Safe Operating Area
Thermal Impedance
3/8
STGB10N60L
Output Characteristics
Transfer Characteristics
Transconductance
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector
Current
Capacitance Variations
4/8
STGB10N60L
Gate Charge vs Gate-Emitter Voltage
Latching Current vs Rg
Gate Threshold vs Temperature
Off Losses vs Collector Current
Off Losses vs Gate Resistance
Off Losses vs Temperature
5/8
STGB10N60L
Switching Off Safe Operatin Area
Fig. 1: Gate Charge test Circuit
Fig. 3: Test Circuit For Inductive Load Switching
6/8
Fig. 2: Switching Times Test Circuit For
Resistive Load
STGB10N60L
TO-263 (D2PAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.21
1.36
0.047
0.053
D
8.95
9.35
0.352
0.368
E
10
10.4
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
D
C2
A2
A
C
DETAIL”A”
DETAIL ”A”
A1
B2
E
B
G
L2
L
L3
P011P6/E
7/8
STGB10N60L
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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8/8
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